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1. 发明申请

US20050199586A1 Resist removal method and semiconductor device manufactured by using the same 审中-公开
标题翻译：抗蚀剂去除方法和使用其制造的半导体器件
公开(公告)号：US20050199586A1
公开(公告)日：2005-09-15
申请号：US11052911
申请日：2005-02-09
申请人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
发明人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
IPC分类号： H01L21/3065 , B44C1/22 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J37/32477 , H01J2237/3342
摘要： In resist removal using hydrogen gas, the specific dielectric constant of an insulating film of a low dielectric constant can be reduced and the resist removal speed can be increased. A wafer is loaded on a rotary table in a chamber, and hydrogen mixed gas is introduced into a discharge tube from a gas introduction port, and a μ wave is supplied into the discharge tube via a waveguide, and the mixed gas is excited by plasma, and a hydrogen active species is generated. And, a neutral radical (hydrogen radical) of hydrogen atoms or hydrogen molecules is introduced into the chamber from a gas transport pipe and a resist mask on the surface of the wafer is removed. Here, by a substrate heating system for heating the rotary table and controlling the temperature, the temperature of the wafer is set within the range from 200° C. to 400° C. The processed gas after resist removal is ejected from the chamber through a gas ejection port by an exhaust system.
摘要翻译：在使用氢气的抗蚀剂去除中，可以降低介电常数低的绝缘膜的比介电常数，并且可以提高抗蚀剂去除速度。将晶片装载在室内的旋转台上，将氢气混合气体从气体导入口引入放电管，经由波导将mu波供给到放电管内，混合气体被等离子体激发，生成氢活性物质。并且，从气体输送管将氢原子或氢分子的中性自由基（氢基团）引入到室中，并且去除晶片表面上的抗蚀剂掩模。这里，通过用于加热旋转台并控制温度的基板加热系统，将晶片的温度设定在200℃至400℃的范围内。抗蚀剂除去后的处理气体通过一个气体排出口由排气系统。

2. 发明授权

US07169708B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07169708B2
公开(公告)日：2007-01-30
申请号：US11037110
申请日：2005-01-19
申请人： Kazuaki Inukai
发明人： Kazuaki Inukai
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method of performing microfabrication using a hard mask in the manufacture of a semiconductor device having an interlayer dielectric (ILD) film made of low-dielectric constant, K, insulating material is provided. When treating a low-K dielectric film for use in semiconductor integrated circuitry and its underlying etching stopper film, a patterned resist film is used as a mask to etch a hard mask film. Subsequently, the resist pattern is subjected to stripping or “ashing” in the atmosphere of a mixture gas of hydrogen (H2) and helium (He) at a temperature higher than 200° C. under a pressure of about 1 Torr. With this procedure, microfabrication relying upon the hard mask less in facet is achievable during its subsequent etching of the low-K dielectric film, without damaging the hard mask film upon removal of the resist.
摘要翻译：提供了在制造具有由低介电常数K绝缘材料制成的层间电介质（ILD））的半导体器件的情况下使用硬掩模进行微细加工的方法。当处理用于半导体集成电路的低K电介质膜及其下面的蚀刻阻挡膜时，使用图案化的抗蚀剂膜作为掩模来蚀刻硬掩模膜。随后，在高于200℃的温度的压力下，将抗蚀剂图案在氢（H 2 N 2）和氦（He）的混合气体的气氛中进行剥离或“灰化” 约1乇。通过这种方法，在其随后的低K电介质膜的蚀刻期间，依赖于小面上的硬掩模的微细加工是可以实现的，而在去除抗蚀剂时不会损坏硬掩模膜。

3. 发明授权

US07538038B2 Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device 失效
标题翻译：从而除去抗蚀剂，半导体器件的方法以及制造半导体器件的方法
公开(公告)号：US07538038B2
公开(公告)日：2009-05-26
申请号：US11052987
申请日：2005-02-09
申请人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Jae Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
发明人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Jae Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/47
CPC分类号： G03F7/427 , H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/7681
摘要： Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NH3 gas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.
摘要翻译：公开了一种去除抗蚀剂的方法，该方法防止低介电常数绝缘膜的介电常数增加并防止抗蚀剂残留。使用抗蚀剂掩模，保护绝缘膜，MSQ膜和构成ILD的氧化硅膜，依次进行RIE干式蚀刻，并且在用于处理的基板的表面上形成通孔以到达用于处理的基板上的扩散层。随后的过程包括由于使用等离子体气体等离子体激发NH 3气体进行的先前的蚀刻，除去形成在基板上用于处理表面的改性层，以及通过氢气和惰性气体产生的氢活性物质的照射完全除去抗蚀剂掩模的另一种蚀刻例如氦气或氩气。

4. 发明授权

US07338897B2 Method of fabricating a semiconductor device having metal wiring 有权
标题翻译：制造具有金属布线的半导体器件的方法
公开(公告)号：US07338897B2
公开(公告)日：2008-03-04
申请号：US11014884
申请日：2004-12-20
申请人： Kazuaki Inukai , Atsushi Matsushita
发明人： Kazuaki Inukai , Atsushi Matsushita
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/31138
摘要： A method of fabricating a semiconductor device includes forming a metal wire on a substrate, forming an interlayer insulating film on the metal wire, forming a resist pattern on the interlayer insulating film, selectively etching the interlayer film to form a trench or via-hole in the interlayer insulating film and reaching the metal wire, and ashing, using a reducing gas, to remove the resist pattern.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成金属线，在金属线上形成层间绝缘膜，在层间绝缘膜上形成抗蚀剂图案，选择性地蚀刻层间膜以形成沟槽或通孔层间绝缘膜并到达金属线，并使用还原气体灰化除去抗蚀剂图案。

5. 发明授权

US07232428B1 Medical cock 有权
标题翻译：医用公鸡
公开(公告)号：US07232428B1
公开(公告)日：2007-06-19
申请号：US10148360
申请日：1999-11-29
申请人： Kazuaki Inukai , Susumu Miyasaka , Kazuhiro Abe , Hideyuki Makino
发明人： Kazuaki Inukai , Susumu Miyasaka , Kazuhiro Abe , Hideyuki Makino
IPC分类号： A61M5/00
CPC分类号： A61M39/02 , A61M39/223
摘要： A sealable access stopcock includes a valve body having a switching part formed in a valve shaft thereof for switching from one flow passage to another; and a main body having an internal chamber in which the valve shaft of the valve body is rotatably fitted, and a plurality of tributary tubes each having a lumen extending therethrough, the lumen opening on a side wall of the internal chamber; the valve body being rotated to selectively bring the lumens into communication with one another through the switching part and thereby switch flow of an infusion fluid from one flow passage to another. A switching channel is provided in the form of an arcuate groove in the switching part of the valve shaft to extend along the circumferential surface thereof.
摘要翻译：一种可密封的进入式活门包括：阀体，其具有形成在其阀轴中的切换部，用于从一个流动通道切换到另一个; 以及主体，其具有内部腔室，其中阀体的阀轴可旋转地配合，以及多个支管，每个支管具有延伸穿过其中的内腔，内腔的侧壁上的管腔开口; 旋转阀体以选择性地使流体通过切换部分彼此连通，从而将输注流体从一个流动通道的流动切换到另一个。切换通道在阀轴的切换部分中以弓形凹槽的形式设置，以沿其圆周表面延伸。

6. 发明授权

US07172965B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07172965B2
公开(公告)日：2007-02-06
申请号：US10849221
申请日：2004-05-20
申请人： Kazuaki Inukai , Atsushi Matsushita
发明人： Kazuaki Inukai , Atsushi Matsushita
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/31612 , H01L21/31633 , H01L21/318 , H01L21/3185 , H01L21/76834
摘要： After forming a stopper film on a semiconductor substrate having a copper wiring layer therein, an interlayer insulating film made of a low dielectric constant material is formed on the stopper film. Then, after forming a capping film on the interlayer insulating film, a resist film having a predetermined pattern is formed on the capping film. The capping film and the interlayer insulating film are etched using the resist film as a mask to form an opening reaching the stopper film. After that, the stopper film exposed by the opening is etched, with the resist film left in place, to form a via hole. Then, the resist film is removed by ashing.
摘要翻译：在其上具有铜布线层的半导体衬底上形成阻挡膜之后，在阻挡膜上形成由低介电常数材料制成的层间绝缘膜。然后，在层间绝缘膜上形成覆盖膜之后，在覆盖膜上形成具有规定图案的抗蚀剂膜。使用抗蚀剂膜作为掩模来对覆盖膜和层间绝缘膜进行蚀刻，以形成到达阻挡膜的开口。之后，蚀刻由开口露出的阻挡膜，使抗蚀剂膜留在原位，形成通孔。然后，通过灰化除去抗蚀剂膜。

7. 发明申请

US20090011280A1 Magnetic head manufacturing method, magnetic head, and magnetic storage device 审中-公开
标题翻译：磁头制造方法，磁头和磁存储装置
公开(公告)号：US20090011280A1
公开(公告)日：2009-01-08
申请号：US11975466
申请日：2007-10-19
申请人： Kazuaki Inukai
发明人： Kazuaki Inukai
IPC分类号： B05D5/12 , G11B5/33
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T428/11
摘要： The present invention relates to a magnetic head manufacturing method used for a magnetic storage device. The method includes the steps of forming a first groove in a shape corresponding to an outline of a main magnetic pole on an insulation layer; forming a second groove corresponding to an outline of a main magnetic pole brace layers; inside the outline of the main magnetic pole; and using a plating method to fill the first and second grooves at the same time with a ferromagnetic material and form a main magnetic pole and a main magnetic pole brace layer at the same time.
摘要翻译：磁头制造方法技术领域本发明涉及一种用于磁存储装置的磁头制造方法。该方法包括以下步骤：在绝缘层上形成对应于主磁极轮廓的形状的第一槽; 形成对应于主磁极支架层的轮廓的第二槽; 在主磁极的轮廓内; 并且使用电镀方法同时用铁磁材料填充第一和第二槽，同时形成主磁极和主磁极支撑层。

8. 发明申请

US20050208756A1 Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device 失效
标题翻译：从而除去抗蚀剂，半导体器件的方法以及制造半导体器件的方法
公开(公告)号：US20050208756A1
公开(公告)日：2005-09-22
申请号：US11052987
申请日：2005-02-09
申请人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
发明人： Atsushi Matsushita , Isao Matsumoto , Kazuaki Inukai , Hong Shin , Naofumi Ohashi , Shuji Sone , Kaori Misawa
IPC分类号： H01L21/3065 , G03F7/42 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/427 , H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/7681
摘要： Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NH3 gas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.
摘要翻译：公开了一种去除抗蚀剂的方法，该方法防止低介电常数绝缘膜的介电常数增加并防止抗蚀剂残留。使用抗蚀剂掩模，保护绝缘膜，MSQ膜和构成ILD的氧化硅膜，依次进行RIE干式蚀刻，并且在用于处理的基板的表面上形成通孔以到达用于处理的基板上的扩散层。随后的过程包括由于通过等离子体激发NH 3气体的等离子体气体的先前蚀刻，除去形成在用于处理表面的基板上的改性层，以及通过产生氢活性物质的照射完全除去抗蚀剂掩模的另一蚀刻通过氢气和惰性气体，例如氦气或氩气。

9. 发明申请

US20080213501A1 Method of manufacturing a magnetic recording head 审中-公开
标题翻译：制造磁记录头的方法
公开(公告)号：US20080213501A1
公开(公告)日：2008-09-04
申请号：US12008070
申请日：2008-01-08
申请人： Kazuaki Inukai , Junichi Kon
发明人： Kazuaki Inukai , Junichi Kon
IPC分类号： C08J7/18
CPC分类号： G11B5/3163 , G11B5/1278
摘要： A method of manufacturing a magnetic recording head includes a resist pattern forming step of forming a resist layer that is made of thermoplastic resin and in which a hole is formed in the shape of a main magnetic pole of the magnetic recording head, a hardening treatment step of hardening surfaces of the resist layer; a baking step that heat-bakes the resist layer after the hardening treatment step to temporarily make the resist layer fluid; and a main magnetic pole forming step of forming a main magnetic pole by filling the hole in the resist layer with a material of the main magnetic pole.
摘要翻译：一种制造磁记录头的方法包括：抗蚀剂图形形成步骤，形成由热塑性树脂制成的抗蚀剂层，其中形成有磁记录头的主磁极形状的孔，硬化处理步骤的抗蚀剂层的硬化表面; 在硬化处理步骤之后对抗蚀剂层进行热烘烤以暂时制造抗蚀剂层流体的烘烤步骤; 以及主磁极形成步骤，通过用主磁极的材料填充抗蚀剂层中的孔来形成主磁极。

10. 发明申请

US20050287811A1 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20050287811A1
公开(公告)日：2005-12-29
申请号：US11037110
申请日：2005-01-19
申请人： Kazuaki Inukai
发明人： Kazuaki Inukai
IPC分类号： G03F7/42 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method of performing microfabrication using a hard mask in the manufacture of a semiconductor device having an interlayer dielectric (ILD) film made of low-dielectric constant, K, insulating material is provided. When treating a low-K dielectric film for use in semiconductor integrated circuitry and its underlying etching stopper film, a patterned resist film is used as a mask to etch a hard mask film. Subsequently, the resist pattern is subjected to stripping or “ashing” in the atmosphere of a mixture gas of hydrogen (H2) and helium (He) at a temperature higher than 200° C. under a pressure of about 1 Torr. With this procedure, microfabrication relying upon the hard mask less in facet is achievable during its subsequent etching of the low-K dielectric film, without damaging the hard mask film upon removal of the resist.
摘要翻译：提供了在制造具有由低介电常数K绝缘材料制成的层间电介质（ILD））的半导体器件的情况下使用硬掩模进行微细加工的方法。当处理用于半导体集成电路的低K电介质膜及其下面的蚀刻阻挡膜时，使用图案化的抗蚀剂膜作为掩模来蚀刻硬掩模膜。随后，在高于200℃的温度的压力下，将抗蚀剂图案在氢（H 2 N 2）和氦（He）的混合气体的气氛中进行剥离或“灰化” 约1乇。通过这种方法，在其随后的低K电介质膜的蚀刻期间，依赖于小面上的硬掩模的微细加工是可以实现的，而在去除抗蚀剂时不会损坏硬掩模膜。

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