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1. 发明授权

US5435830A Method of producing fine powders 失效
标题翻译：生产细粉的方法
公开(公告)号：US5435830A
公开(公告)日：1995-07-25
申请号：US257268
申请日：1994-06-09
申请人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
发明人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
IPC分类号： B22F9/24
CPC分类号： B22F9/24
摘要： First, an aqueous solution of water soluble compounds or an aqueous solution of water soluble complexes, which is a salt of elements belonging to the 6A, 7A, 1B, 2B, 3B, 4B, 5B, 6B, or 8 group in a periodic table are prepared. The pH of the aqueous solution is adjusted and titanium trichloride is added thereto. The aqueous solution provided with titanium trichloride is stirred at temperature below the boiling point of the solution under atmospheric pressure or under high pressure. Then, by the reducing action of the titanium trichloride, a fine titanium-free powder selected from the group consisting of a metal powder, an alloy powder containing two or more of metals and non-metals, or a compound powder containing two or more of metals and non-metals is obtained.
摘要翻译：首先，作为元素周期表中属于6A，7A，1B，2B，3B，4B，5B，6B或8族的元素的盐的水溶性化合物的水溶液或水溶性络合物的水溶液准备好了调节水溶液的pH，并向其中加入三氯化钛。提供三氯化钛的水溶液在大气压或高压下在低于溶液沸点的温度下搅拌。然后，通过三氯化钛的还原作用，可以使用选自金属粉末，含有两种以上金属和非金属的合金粉末的微细的无钛粉末，或者含有两种以上的金属和非金属的化合物粉末获得金属和非金属。

2. 发明授权

US5160373A Electroless plating bath 失效
标题翻译：化学镀浴
公开(公告)号：US5160373A
公开(公告)日：1992-11-03
申请号：US713782
申请日：1991-06-12
申请人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
发明人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
IPC分类号： C23C18/31 , C23C18/34 , C23C18/52
CPC分类号： C23C18/52
摘要： An electroless plating bath for depositing a metal selected from the group consisting of Ni, Zn, As, Cd, In, Sb, Pb and alloys thereof, which contains a titanium (III) compound as a reducing agent. Typical titanium (III) compounds are titanium halides, cyclopentadienyl complex compounds of titanium (III) ions, titanium sulfate, and titanium hydroxide.
摘要翻译：一种用于沉积选自Ni，Zn，As，Cd，In，Sb，Pb的金属和含有钛（III）化合物作为还原剂的合金的化学镀浴。典型的钛（III）化合物是钛卤化物，钛（III）离子的环戊二烯基络合物化合物，硫酸钛和氢氧化钛。

3. 发明授权

US5306335A Electroless bismuth plating bath 失效
标题翻译：无电镀铋电镀浴
公开(公告)号：US5306335A
公开(公告)日：1994-04-26
申请号：US13701
申请日：1993-02-04
申请人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
发明人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
IPC分类号： C23C18/31 , C23C18/52 , C23C18/16
CPC分类号： C23C18/52
摘要： In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid, and 0.04M of stannous chloride. In plating treatment, the plating bath preferably has a temperature of 60.degree. C. and a pH value of 8.6 to 8.8.
摘要翻译：在含有三氯化铋，还原剂和络合剂的化学镀浴中，使用氯化亚锡作为还原剂，以使得通常被认为是不可能的铋化学镀。镀浴的优选组成为0.08M三氯化铋，0.34M柠檬酸钠，0.08M EDTA，0.20M次氮基三乙酸和0.04M氯化亚锡。在电镀处理中，电镀浴的温度优选为60℃，pH值为8.6〜8.8。

4. 发明授权

US5368896A Electroless bismuth plating bath 失效
标题翻译：无电镀铋电镀浴
公开(公告)号：US5368896A
公开(公告)日：1994-11-29
申请号：US191036
申请日：1994-02-03
申请人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
发明人： Atsuo Senda , Takuji Nakagawa , Yoshihiko Takano
IPC分类号： C23C18/31 , C23C18/52 , B05D1/18
CPC分类号： C23C18/52
摘要： In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid, and 0.04M of stannous chloride. In plating treatment, the plating bath preferably has a temperature of 60.degree. C. and a pH value of 8.6 to 8.8.
摘要翻译：在含有三氯化铋，还原剂和络合剂的化学镀浴中，使用氯化亚锡作为还原剂，以使得通常被认为是不可能的铋化学镀。镀浴的优选组成为0.08M三氯化铋，0.34M柠檬酸钠，0.08M EDTA，0.20M次氮基三乙酸和0.04M氯化亚锡。在电镀处理中，电镀浴的温度优选为60℃，pH值为8.6〜8.8。

5. 发明授权

US5494711A Method of preparing InSb thin film 失效
标题翻译：制备InSb薄膜的方法
公开(公告)号：US5494711A
公开(公告)日：1996-02-27
申请号：US180127
申请日：1994-01-11
申请人： Toshikazu Takeda , Yoshifumi Ogiso , Takuji Nakagawa , Atsuo Senda
发明人： Toshikazu Takeda , Yoshifumi Ogiso , Takuji Nakagawa , Atsuo Senda
IPC分类号： H01L43/12 , C23C14/02 , C23C14/06 , H01L21/203 , H01L31/18 , H01L43/14 , B05D1/04 , B05D1/36 , B06B1/00 , H05C1/00
CPC分类号： C23C14/0617 , C23C14/02 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： Disclosed herein is a method of preparing an InSb thin film, which comprises a step of physically sticking InSb powder onto a major surface of a substrate, and a step of depositing an InSb thin film on the major surface of the substrate provided with the as-stuck InSb powder by a method such as vacuum evaporation.
摘要翻译：本文公开了一种制备InSb薄膜的方法，该方法包括将InSb粉末物理地粘附在基材的主表面上的步骤，以及将InSb薄膜沉积在基片的主表面上的步骤，通过真空蒸发等方法对InSb粉末进行吸附。

6. 发明授权

US4508756A Method for inhibiting oxidation of a copper film on ceramic body 失效
标题翻译：抑制陶瓷体上铜膜氧化的方法
公开(公告)号：US4508756A
公开(公告)日：1985-04-02
申请号：US389251
申请日：1982-06-17
申请人： Atsuo Senda , Tohru Kasanami , Takuji Nakagawa
发明人： Atsuo Senda , Tohru Kasanami , Takuji Nakagawa
IPC分类号： C23F11/10 , H01G4/005 , H05K1/03 , H05K3/28 , B05D1/18 , C23C3/02 , C23C13/02
CPC分类号： H01G4/005 , C23F11/10 , H05K1/0306 , H05K3/282
摘要： A method for inhibiting oxidation of copper electrodes of a ceramic capacitor, comprising the step of subjecting copper films formed by an electroless plating process or the like and serving as opposed electrodes of a ceramic capacitor to a hydrocarbon halide compound including trichloroethylene, perchloroethylene, freon, chlorobenzene, methyl chloride, methylene chloride, chloroform, carbon tetrachloride, or the like.
摘要翻译：一种用于抑制陶瓷电容器的铜电极的氧化的方法，包括以下步骤：将由化学镀处理等形成的铜膜用作陶瓷电容器的相对电极，包括三氯乙烯，全氯乙烯，氟利昂，氯苯，氯甲烷，二氯甲烷，氯仿，四氯化碳等。

7. 发明授权

US4604676A Ceramic capacitor 失效
标题翻译：陶瓷电容器
公开(公告)号：US4604676A
公开(公告)日：1986-08-05
申请号：US782217
申请日：1985-09-30
申请人： Atsuo Senda , Toshi Numata , Takuji Nakagawa , Yoshifumi Ogiso
发明人： Atsuo Senda , Toshi Numata , Takuji Nakagawa , Yoshifumi Ogiso
IPC分类号： H01G4/10 , H01G4/12 , H01G4/232 , H01G1/14
CPC分类号： H01G4/2325
摘要： A monolithic ceramic capacitor comprises a dielectric ceramic element assembly, metal electrodes for external connection and conductive metal oxide layers formed between the ceramic element assembly and the metal electrodes for preventing reduction of metal oxide forming the dielectric ceramic material.
摘要翻译：单片陶瓷电容器包括介电陶瓷元件组件，用于外部连接的金属电极和形成在陶瓷元件组件和金属电极之间的导电金属氧化物层，用于防止形成电介质陶瓷材料的金属氧化物的还原。

8. 发明授权

US4362629A Method for processing solution including heavy metal 失效
标题翻译：包括重金属在内的处理方法
公开(公告)号：US4362629A
公开(公告)日：1982-12-07
申请号：US194981
申请日：1980-10-08
申请人： Atsuo Senda , Tohru Kasanami , Takuji Nakagawa
发明人： Atsuo Senda , Tohru Kasanami , Takuji Nakagawa
IPC分类号： C02F1/36 , C02F9/00 , C02F1/62
CPC分类号： C02F9/00 , C02F1/36 , C02F2101/20 , Y10S210/912
摘要： A method for processing a waste solution used in a chemical plating process and including a heavy metal complex salt, a reducing agent, and a pH adjusting agent. The heavy metal complex salt is decomposed into a heavy metal component and a complexing agent component by applying ultrasonic vibration to the waste solution. The heavy metal component obtained by decomposition is in a powder state. Then the waste solution is filtered, so that the heavy metal component may be separated from the complexing agent component.
摘要翻译：一种用于处理化学镀处理中使用的废溶液的方法，包括重金属络合盐，还原剂和pH调节剂。重金属络合盐通过对废溶液施加超声波振动而分解成重金属组分和络合剂组分。通过分解获得的重金属组分处于粉末状态。然后将废溶液过滤，使得重金属组分可以与络合剂组分分离。

9. 发明授权

US4920915A Work holder for masking 失效
标题翻译：掩蔽工作台
公开(公告)号：US4920915A
公开(公告)日：1990-05-01
申请号：US361500
申请日：1989-06-05
申请人： Atsuo Senda , Toshi Numata , Tomoaki Ushiro , Takuji Nakagawa , Masaaki Taniguchi
发明人： Atsuo Senda , Toshi Numata , Tomoaki Ushiro , Takuji Nakagawa , Masaaki Taniguchi
IPC分类号： C23C14/04 , C23C14/50
CPC分类号： C23C14/50 , C23C14/042
摘要： A work holder (12) for holding a workpiece (2) while partially masking the same by use of a mask (18). The workpiece and the mask are elastically pressed against each other by an aggregate (15) of heat-resistant fiber such as metal fiber or ceramic fiber, so that the workpiece and the mask are brought into close contact with each other. This work holder is adapted to form a resistor film (9) on a part of the surface of a chip (2) to form a chip-type resistor (1), for example, by a thin film forming method such as sputtering.
摘要翻译：一种用于通过使用掩模（18）对工件（2）进行部分掩蔽的工件（2）的工件保持器（12）。工件和面罩通过诸如金属纤维或陶瓷纤维的耐热纤维的骨料（15）彼此弹性地压靠，使得工件和面罩彼此紧密接触。该工件保持器适于在芯片（2）的表面的一部分上形成电阻膜（9），以例如通过诸如溅射的薄膜形成方法形成芯片型电阻器（1）。

10. 发明授权

US4328048A Method of forming copper conductor 失效
标题翻译：形成铜导体的方法
公开(公告)号：US4328048A
公开(公告)日：1982-05-04
申请号：US194980
申请日：1980-10-08
申请人： Atsuo Senda , Tohru Kasanami , Takuji Nakagawa
发明人： Atsuo Senda , Tohru Kasanami , Takuji Nakagawa
IPC分类号： H01G4/12 , B32B15/08 , C23C8/80 , H01G4/012 , H05K1/03 , H05K3/18 , H05K3/38 , C23F7/02
CPC分类号： C23C8/80 , H05K3/38 , H05K1/0306 , H05K3/181
摘要： A structure of a copper conductor is obtained by oxidizing copper film formed on the surface of a substrate, and by heat treating the same in a reducing atmosphere, whereby only the surface layer portion of the oxidized copper film is reduced to become copper. The copper film of a conductor is formed on the surface of the substrate with the oxidized copper film interposed therebetween. As a result, an adhesion of the copper film to the surface of the substrate is enhanced.
摘要翻译：铜导体的结构是通过氧化形成在基板表面上的铜膜，并通过在还原气氛中进行热处理而得到的，从而只有氧化的铜膜的表层部分被还原为铜。导电体的铜膜形成在基板的表面上，氧化的铜膜插入其间。结果，增强了铜膜对基板表面的粘合性。

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