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1. 发明授权

US07598172B2 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole 有权
标题翻译：通过使用双镶嵌工艺制造半导体器件的方法和用于制造具有连通孔的制品的方法
公开(公告)号：US07598172B2
公开(公告)日：2009-10-06
申请号：US12186468
申请日：2008-08-05
申请人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
发明人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76835 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76807 , H01L21/76808 , H01L21/76817
摘要： A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component having a first insulating film is prepared on a substrate, and a layer is disposed on the above-described first insulating film. A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via. Thereafter, the above-described first insulating film is etched by using the above-described second insulating film as a mask so as to form a second via, which is connected to the first via, in the first insulating film.
摘要翻译：提供一种制造半导体器件的方法，其中容易控制布线沟槽和通孔在深度方向上的长度。在基板上制备具有第一绝缘膜的部件，在上述第一绝缘膜上设置有层。具有图案的模具被印刷在上述层上，以形成具有布线沟槽和第一通孔的第二绝缘膜，该图案对应于布线沟槽和第一通孔。此后，通过使用上述第二绝缘膜作为掩模来蚀刻上述第一绝缘膜，以便在第一绝缘膜中形成连接到第一通孔的第二通孔。

2. 发明申请

US20070128850A1 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole 有权
标题翻译：通过使用双镶嵌工艺制造半导体器件的方法和用于制造具有连通孔的制品的方法
公开(公告)号：US20070128850A1
公开(公告)日：2007-06-07
申请号：US11606874
申请日：2006-12-01
申请人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
发明人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76835 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76807 , H01L21/76808 , H01L21/76817
摘要： A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component having a first insulating film is prepared on a substrate, and a layer is disposed on the above-described first insulating film. A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via. Thereafter, the above-described first insulating film is etched by using the above-described second insulating film as a mask so as to form a second via, which is connected to the first via, in the first insulating film.
摘要翻译：提供一种制造半导体器件的方法，其中容易控制布线沟槽和通孔在深度方向上的长度。在基板上制备具有第一绝缘膜的部件，在上述第一绝缘膜上设置有层。具有图案的模具被印刷在上述层上，以形成具有布线沟槽和第一通孔的第二绝缘膜，该图案对应于布线沟槽和第一通孔。此后，通过使用上述第二绝缘膜作为掩模来蚀刻上述第一绝缘膜，以便在第一绝缘膜中形成连接到第一通孔的第二通孔。

3. 发明授权

US07422981B2 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole 有权
标题翻译：通过使用双镶嵌工艺制造半导体器件的方法和用于制造具有连通孔的制品的方法
公开(公告)号：US07422981B2
公开(公告)日：2008-09-09
申请号：US11606874
申请日：2006-12-01
申请人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
发明人： Atsunori Terasaki , Junichi Seki , Ichiro Tanaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76835 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76807 , H01L21/76808 , H01L21/76817
摘要： A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component having a first insulating film is prepared on a substrate, and a layer is disposed on the above-described first insulating film. A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film having a wiring trench and a first via, the pattern corresponding to the wiring trench and the first via. Thereafter, the above-described first insulating film is etched by using the above-described second insulating film as a mask so as to form a second via, which is connected to the first via, in the first insulating film.
摘要翻译：提供一种制造半导体器件的方法，其中容易控制布线沟槽和通孔在深度方向上的长度。在基板上制备具有第一绝缘膜的部件，在上述第一绝缘膜上设置有层。具有图案的模具被印刷在上述层上，以形成具有布线沟槽和第一通孔的第二绝缘膜，该图案对应于布线沟槽和第一通孔。此后，通过使用上述第二绝缘膜作为掩模来蚀刻上述第一绝缘膜，以便在第一绝缘膜中形成连接到第一通孔的第二通孔。

4. 发明授权

US09039402B2 Imprinting apparatus and method therefor 有权
标题翻译：压印装置及其方法
公开(公告)号：US09039402B2
公开(公告)日：2015-05-26
申请号：US12566513
申请日：2009-09-24
申请人： Eigo Kawakami , Shingo Okushima , Hideki Ina , Junichi Seki , Atsunori Terasaki , Motoki Okinaka
发明人： Eigo Kawakami , Shingo Okushima , Hideki Ina , Junichi Seki , Atsunori Terasaki , Motoki Okinaka
IPC分类号： B29C43/02 , B29C43/00 , B29C43/14 , B82Y10/00 , B82Y40/00 , G03F7/00 , B29C59/02 , B29C43/58
CPC分类号： B29C43/021 , B29C43/003 , B29C43/14 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5833 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： There is provided an imprinting apparatus that transfers a pattern of a mold to a resin on a substrate, the imprinting apparatus including a deposition mechanism configured to deposit the resin onto the substrate; a first driving mechanism configured to change a relative position, on a plane parallel to the surface of the substrate, of the substrate and the mold; a second driving mechanism configured to change the relative position, on a plane parallel to the surface of the substrate, of the substrate and the deposition mechanism; and a control unit configured to control the deposition mechanism and the driving mechanism so as to perform a resin deposition process of depositing the resin onto the substrate and an imprint process of transferring the pattern of the mold to the resin on the substrate in parallel.
摘要翻译：提供了一种压印装置，其将模具的图案转移到基板上的树脂，所述压印装置包括沉积机构，所述沉积机构被配置为将所述树脂沉积到所述基板上; 第一驱动机构，其构造成在基板的表面平行的平面上改变基板和模具的相对位置; 第二驱动机构，被配置为在与基板的表面平行的平面上改变基板和沉积机构的相对位置; 以及控制单元，被配置为控制沉积机构和驱动机构，以便执行将树脂沉积到基板上的树脂沉积工艺和将模具图案平行地转移到基板上的树脂的压印工艺。

5. 发明授权

US08404169B2 Imprint apparatus and method of manufacturing article 有权
标题翻译：印刷装置及其制造方法
公开(公告)号：US08404169B2
公开(公告)日：2013-03-26
申请号：US12566572
申请日：2009-09-24
申请人： Eigo Kawakami , Hideki Ina , Junichi Seki , Atsunori Terasaki , Shingo Okushima , Motoki Okinaka
发明人： Eigo Kawakami , Hideki Ina , Junichi Seki , Atsunori Terasaki , Shingo Okushima , Motoki Okinaka
IPC分类号： B29B11/08 , B29C45/76
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/00
摘要： An imprint apparatus for pressing resin and a mold to each other in a Z-axis direction to form a resin pattern on a shot region includes: a mold chuck; an X-Y stage; a reference mark formed on the stage; a first scope configured to measure a positional deviation in an x-y plane between a mold mark and the reference mark; a second scope configured to measure a position of a substrate mark in the plane not via the mold mark; and a dispenser configured to dispense resin. In the plane, the dispenser center is deviated in position from the mold chuck center by a first distance in a first direction, and the second scope center is deviated in position from the dispenser center by a distance smaller than twice the first distance in the first direction or a second direction opposite thereto.
摘要翻译：在Z轴方向上按压树脂和模具以在射出区域形成树脂图案的压印装置包括：模具卡盘; X-Y舞台; 在舞台上形成参考标记; 第一范围，被配置为测量模具标记和参考标记之间的x-y平面中的位置偏差; 第二范围，被配置为不经由模具标记来测量所述平面中的基板标记的位置; 以及配置成分配树脂的分配器。在平面中，分配器中心从第一方向偏离模具卡盘中心第一距离，并且第二范围中心从分配器中心偏离距离小于第一距离的距离的距离方向或与其相反的第二方向。

6. 发明授权

US08308471B2 Mold, mold production process, processing apparatus, and processing method 有权
标题翻译：模具，模具生产工艺，加工设备及加工方法
公开(公告)号：US08308471B2
公开(公告)日：2012-11-13
申请号：US12091845
申请日：2008-03-14
申请人： Atsunori Terasaki , Junichi Seki
发明人： Atsunori Terasaki , Junichi Seki
IPC分类号： A01J21/00
CPC分类号： B82Y10/00 , B81C99/009 , B82Y40/00 , G03F7/0002 , G03F9/7084 , Y10T428/24479
摘要： A mold for imprinting a pattern onto a member to be processed. The mold includes a mold body having a front surface, at which an imprint pattern is formed, and a rear surface opposite from the front surface. A coating layer covers the front surface of the mold body, and a coating layer covers the rear surface of the mold body. An alignment mark as an object to be subjected to optical observation is provided at the front surface of the mold body. The coating layer for covering the rear surface includes (i) a hole for observation of the alignment mark and (ii) a stress adjusting pattern corresponding to a density of the imprint pattern. The hole for observation is formed at the rear surface of the mold body opposite from the alignment mark, and the stress adjusting pattern is formed at the rear surface of the mold body opposite from the imprint pattern.
摘要翻译：用于将图案压印到要处理的构件上的模具。模具包括具有形成有压印图案的前表面和与前表面相对的后表面的模具体。涂层覆盖模体的前表面，涂层覆盖模体的后表面。在模具体的前表面设置有作为光学观察对象的对准标记。用于覆盖后表面的涂层包括（i）用于观察对准标记的孔和（ii）与压印图案的密度相对应的应力调整图案。用于观察的孔形成在与对准标记相对的模具体的后表面处，并且应力调整图案形成在与压印图案相对的模具体的后表面处。

7. 发明申请

US20100200544A1 PRODUCTION PROCESS OF STRUCTURE 审中-公开
标题翻译：生产过程结构
公开(公告)号：US20100200544A1
公开(公告)日：2010-08-12
申请号：US12767881
申请日：2010-04-27
申请人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
发明人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
IPC分类号： C03C15/00
CPC分类号： H01L21/02126 , C03C17/42 , C03C2218/33 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/02356 , H01L21/31144 , H01L21/3121 , H01L21/316
摘要： A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern formed on the second layer as a mask and then the first layer and the second layer are calcined to prepare the structure containing silicon oxide.
摘要翻译：制造含有氧化硅的结构的方法包括在基材上形成第一层有机旋涂玻璃的步骤和在第一层上形成第二层无机旋涂玻璃的步骤。此后，通过使用形成在第二层上的图案作为掩模来蚀刻第一层，然后将第一层和第二层煅烧以制备含有氧化硅的结构。

8. 发明申请

US20090273124A1 NANOIMPRINTING METHOD AND MOLD FOR USE IN NANOIMPRINTING 有权
标题翻译：用于纳米压印的纳米压印方法和模具
公开(公告)号：US20090273124A1
公开(公告)日：2009-11-05
申请号：US12405847
申请日：2009-03-17
申请人： Motoki Okinaka , Junichi Seki , Atsunori Terasaki , Shingo Okushima
发明人： Motoki Okinaka , Junichi Seki , Atsunori Terasaki , Shingo Okushima
IPC分类号： B29C35/08 , B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A nanoimprinting method includes: forming at a region for performing a first nanoimprinting process on a substrate, a first patterning region with a first affinity to resin; forming at a region for performing a second nanoimprinting process on the substrate, a second patterning region with a second affinity to resin, the second affinity being lower than the first affinity; applying the resin to the first patterning region and transferring a pattern of a mold to the resin by the first nanoimprinting process; and modifying the second patterning region to a region with affinity to resin that is higher than the second affinity, then applying the resin to the modified region, and performing the second nanoimprinting process to process the second patterning region thereby connecting patterns formed at the first patterning region and the second patterning region to each other.
摘要翻译：纳米压印方法包括：在用于在衬底上进行第一纳米压印过程的区域上形成第一图案化区域，其对树脂具有第一亲和力; 在用于在所述基板上进行第二纳米压印处理的区域上形成第二图案化区域，所述第二图案形成区域对树脂具有第二亲和力，所述第二亲和力低于所述第一亲和力; 将所述树脂施加到所述第一图案形成区域并通过所述第一纳米压印工艺将模具的图案转移到所述树脂; 并且将所述第二图案形成区域修饰为与所述第二亲和力高于树脂的区域，然后将所述树脂施加到所述改性区域，并进行所述第二纳米压印处理以处理所述第二图案化区域，从而将形成在所述第一图案形成区域和第二图案形成区域彼此。

9. 发明申请

US20080211133A1 MOLD, PRODUCTION PROCESS OF MOLD, IMPRINT APPARATUS, AND IMPRINT METHOD 有权
标题翻译：模具，模具生产过程，印刷装置和印刷方法
公开(公告)号：US20080211133A1
公开(公告)日：2008-09-04
申请号：US12033078
申请日：2008-02-19
申请人： Atsunori Terasaki , Junichi Seki
发明人： Atsunori Terasaki , Junichi Seki
IPC分类号： B29C43/32
CPC分类号： B29C43/021 , B29C35/0888 , B29C2035/0827 , B29C2043/025
摘要： A mold for imprinting a pattern onto a resin material applied onto a substrate is constituted by a mold substrate formed of a material transparent to light in at least a part of a wavelength range of light used for alignment, an alignment structure area having an alignment structure comprising a recess portion, a pattern forming area having a pattern, and a coating layer is formed of a material having an optical characteristic different from that of the mold substrate. The coating layer is on a side wall of the recess portion.
摘要翻译：用于将图案压印到施加到基板上的树脂材料上的模具由在用于对准的光的至少一部分波长范围内由对光透明的材料形成的模具基板，具有对准结构的对准结构区域包括凹部，具有图案的图案形成区域，并且涂层由具有与模具基板的光学特性不同的光学特性的材料形成。涂层位于凹部的侧壁上。

10. 发明申请

US20080047932A1 PRODUCTION PROCESS OF STRUCTURE 失效
标题翻译：生产过程结构
公开(公告)号：US20080047932A1
公开(公告)日：2008-02-28
申请号：US11843873
申请日：2007-08-23
申请人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
发明人： Atsunori Terasaki , Junichi Seki , Toshiki Ito
IPC分类号： C03C15/00
CPC分类号： H01L21/02126 , C03C17/42 , C03C2218/33 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/02356 , H01L21/31144 , H01L21/3121 , H01L21/316
摘要： A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern formed on the second layer as a mask and then the first layer and the second layer are calcined to prepare the structure containing silicon oxide.
摘要翻译：制造含有氧化硅的结构的方法包括在基材上形成第一层有机旋涂玻璃的步骤和在第一层上形成第二层无机旋涂玻璃的步骤。此后，通过使用形成在第二层上的图案作为掩模来蚀刻第一层，然后将第一层和第二层煅烧以制备含有氧化硅的结构。

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