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1. 发明授权

US09468987B2 Arc welding control system and method 有权
标题翻译：电弧焊控制系统及方法
公开(公告)号：US09468987B2
公开(公告)日：2016-10-18
申请号：US13881096
申请日：2011-07-06
申请人： Atsuhito Aoki , Masatsugu Takeichi , Masaru Seto , Yukio Ikezawa
发明人： Atsuhito Aoki , Masatsugu Takeichi , Masaru Seto , Yukio Ikezawa
IPC分类号： B23K9/12 , B23K9/09 , B23K9/095 , B23K9/127 , B23K9/02
CPC分类号： B23K9/09 , B23K9/0216 , B23K9/095 , B23K9/0953 , B23K9/0956 , B23K9/127
摘要： The present invention provides an arc welding control system and method capable of simultaneously, sophisticatedly performing a weaving width control operation and a torch height control operation. Influence ratios (δw and δz) of influences of a torch height deviation (ΔPh) and a groove wall distance deviation (ΔPd) with respect to a manipulated variable (Δw) of a weaving width and a manipulated variable (Δz) of a torch height are set in accordance with a groove angle (θ) of a workpiece (5). A calculation unit (21) calculates the manipulated variables (Δz and Δw) of actuators (13 and 14) regarding the torch height and the weaving width such that the influence ratios (δw and δz) become large as the groove angle (θ) becomes large.
摘要翻译：本发明提供一种电弧焊接控制系统和方法，其能够同时进行织造宽度控制操作和割炬高度控制操作。焊枪高度偏差（ΔPh）和槽壁距离偏差（ΔPd）相对于编织宽度的操纵变量（Δw）和割炬高度的操纵变量（Δz）的影响的影响比（δw和δz）根据工件（5）的槽角（θ）设定。计算单元（21）计算关于割炬高度和编织宽度的致动器（13和14）的操纵变量（Δz和Δw），使得当沟槽角度（θ）变得变大时，影响比（δw和δz）变大大。

2. 发明申请

US20130299475A1 ARC WELDING CONTROL SYSTEM AND METHOD 有权
标题翻译：电弧焊接控制系统及方法
公开(公告)号：US20130299475A1
公开(公告)日：2013-11-14
申请号：US13881096
申请日：2011-07-06
申请人： Atsuhito Aoki , Masatsugu Takeichi , Masaru Seto , Yukio Ikezawa
发明人： Atsuhito Aoki , Masatsugu Takeichi , Masaru Seto , Yukio Ikezawa
IPC分类号： B23K9/095
CPC分类号： B23K9/09 , B23K9/0216 , B23K9/095 , B23K9/0953 , B23K9/0956 , B23K9/127
摘要： The present invention provides an arc welding control system and method capable of simultaneously, sophisticatedly performing a weaving width control operation and a torch height control operation. Influence ratios (δw and δz) of influences of a torch height deviation (ΔPh) and a groove wall distance deviation (ΔPd) with respect to a manipulated variable (Δw) of a weaving width and a manipulated variable (Δz) of a torch height are set in accordance with a groove angle (θ) of a workpiece (5). A calculation unit (21) calculates the manipulated variables (Δz and Δw) of actuators (13 and 14) regarding the torch height and the weaving width such that the influence ratios (δw and δz) become large as the groove angle (θ) becomes large.
摘要翻译：本发明提供一种电弧焊接控制系统和方法，其能够同时进行织造宽度控制操作和割炬高度控制操作。焊枪高度偏差（DeltaPh）和槽壁距离偏差（DeltaPd）相对于编织宽度的操纵变量（Deltaw）和割炬高度的操纵变量（Deltaz）的影响的影响比（deltaw和deltaz）根据工件（5）的凹槽角（θ）设定。计算单元（21）计算关于割炬高度和编织宽度的致动器（13和14）的操纵变量（Deltaz和Deltaw），使得当沟槽角度（θ）变得变大时，影响比（deltaw和deltaz）变大大。

3. 发明授权

US09296035B2 Lubricating-oil composition for forging molding and forging molding apparatus 有权
标题翻译：用于锻造成型和锻造成型设备的润滑油组合物
公开(公告)号：US09296035B2
公开(公告)日：2016-03-29
申请号：US13498239
申请日：2010-09-30
申请人： Norihisa Horaguchi , Kosuke Ikeda , Masaru Seto , Yuusuke Sakama
发明人： Norihisa Horaguchi , Kosuke Ikeda , Masaru Seto , Yuusuke Sakama
IPC分类号： C10M147/02 , B21J3/00 , B21K3/00 , B21K13/02 , B21K29/00 , C10M141/10 , C10M161/00 , C10M169/04
CPC分类号： B21J3/00 , B21K3/00 , B21K13/02 , B21K29/00 , C10M141/10 , C10M161/00 , C10M169/04 , C10M2203/1006 , C10M2205/026 , C10M2207/40 , C10M2213/062 , C10M2223/045 , C10N2220/082 , C10N2230/06 , C10N2240/402 , C10N2210/02
摘要： An object is to provide a lubricating-oil composition for forging molding excellent in lubricity, and a forging molding apparatus also suitable for the lubricating-oil composition of the present invention.The lubricating-oil composition for forging molding of the present invention includes at least two types of solid lubricants having different particle sizes, an extreme-pressure agent, and the balance of base oil. Also, the forging molding apparatus of the present invention includes paired molds formed of an upper mold and a lower mold interposing a forging material therebetween for molding and a lubricating-oil-composition spraying device for spraying the lubricating-oil composition for forging molding onto a surface of the molds, wherein the spraying device includes an oil-feeding tank storing the lubricating-oil composition and a supply tube for suctioning the lubricating-oil composition from the oil-feeding tank for supply to a nozzle, and the supply tube comprises a plurality of suction ports.
摘要翻译：本发明的目的是提供一种润滑性优异的锻造成型润滑油组合物，以及也适用于本发明的润滑油组合物的锻造成型装置。本发明的锻造成形用润滑油组合物包括至少两种具有不同粒径的固体润滑剂，极压剂和基础油的余量。此外，本发明的锻造成型装置包括由上模具和下模具形成的成对模具，在其间插入用于成型的锻造材料和用于将锻造成型用润滑油组合物喷射到模具上的润滑油组合物喷射装置模具的表面，其中喷射装置包括储存润滑油组合物的供油罐和用于从供油罐吸入润滑油组合物供应到喷嘴的供应管，并且供应管包括：多个吸入口。

4. 发明申请

US20060213889A1 Arc start method in consumable electrode type arc welding method 失效
标题翻译：消耗电极式电弧焊法电弧启动法
公开(公告)号：US20060213889A1
公开(公告)日：2006-09-28
申请号：US11370182
申请日：2006-03-08
申请人： Yukimitsu Suzuki , Ichiro Arita , Satoru Yamasumi , Masaru Seto , Takahisa Iizuka , Kazuhiko Onoue , Kunio Uchikoshi
发明人： Yukimitsu Suzuki , Ichiro Arita , Satoru Yamasumi , Masaru Seto , Takahisa Iizuka , Kazuhiko Onoue , Kunio Uchikoshi
IPC分类号： B23K9/06
CPC分类号： B23K9/1093 , B23K9/067
摘要： To provide an arc start method in a consumable electrode type arc welding method capable of firmly executing arc start and capable of executing high quality high speed welding by restraining a welding defect from being brought about therefor, at a portion of a wire projected from a welding tip, a temperature of a front end portion of the wire is made to be at a temperature higher than a temperature of a portion thereof near the welding tip. The front end portion of the wire is preheated to 300° C. or higher, preferably, 450° C. or higher. The front end portion of the wire is preheated by generating arc for preheating. The preheating arc is generated in a spot-like shape at a position near a terminal end portion of a predetermined welding line by constituting a current lower than a welding current.
摘要翻译：为了提供一种能够通过抑制焊接缺陷而能够牢固地执行电弧启动并且能够执行高质量高速焊接的消耗电极型电弧焊接方法中的电弧启动方法，在从焊接中投射的电线的一部分将导线的前端部的温度设定为比焊接头附近的温度高的温度。将线的前端部预热至300℃以上，优选为450℃以上。通过产生用于预热的电弧来预热电线的前端部分。通过构成低于焊接电流的电流，预定电弧在预定焊接线的末端部附近的位置处以点状形成。

5. 发明授权

US06373693B1 Portable electronic apparatus having a battery pack receptacle 失效
标题翻译：具有电池组容器的便携式电子设备
公开(公告)号：US06373693B1
公开(公告)日：2002-04-16
申请号：US09239446
申请日：1999-01-28
申请人： Masaru Seto , Hideaki Tanaka , Yasuyuki Horii , Naohiro Yokoyama , Atsushi Tatemichi
发明人： Masaru Seto , Hideaki Tanaka , Yasuyuki Horii , Naohiro Yokoyama , Atsushi Tatemichi
IPC分类号： G06F116
CPC分类号： G06F1/1616 , G06F1/1635 , G06F1/1656 , G06F1/1658 , G06F1/1683 , G11B33/12 , G11B33/123 , G11B33/124 , H01M2/1055
摘要： The portable electronic apparatus has a box-like casing having a peripheral wall, and a pack receptacle defined within the casing. The pack receptacle has an opening portion opened in the peripheral wall. A packaged functional component is stored in the pack receptacle, such that the functional component can be detached therefrom through the opening portion. The pack receptacle of the casing is provided with a locking member for holding the functional component. The locking member is movable by manual operation between a locked position where the locking member is hooked on the functional component and a lock-released position where the locking member leaves the functional component. The pack receptacle is provided with a spring for energizing the functional component in the direction in which the functional component is pushed out through the opening portion. The opening portion of the casing and the locking member are covered with a detachable cover.
摘要翻译：便携式电子设备具有具有周壁的盒状壳体和限定在壳体内的包装容器。包装容器具有在周壁上开口的开口部分。包装的功能部件被存储在包装容器中，使得功能部件可以通过开口部分从其中脱离。壳体的包装容器设置有用于保持功能部件的锁定构件。锁定构件可通过手动操作在锁定构件钩在功能构件上的锁定位置与锁定构件离开功能构件的锁定释放位置之间移动。包装容器设置有用于在功能部件通过开口部分被推出的方向上激励功能部件的弹簧。壳体的开口部分和锁定构件被可拆卸的盖子覆盖。

6. 发明授权

US06333231B1 Method for manufacturing semiconductor memory 失效
标题翻译：半导体存储器的制造方法
公开(公告)号：US06333231B1
公开(公告)日：2001-12-25
申请号：US09668308
申请日：2000-09-25
申请人： Hiroaki Takahashi , Masaru Seto
发明人： Hiroaki Takahashi , Masaru Seto
IPC分类号： H01L21336
CPC分类号： H01L27/1126 , H01L27/112
摘要： A method for manufacturing read-only memory. In each memory cell on a wafer, a gate electrode 3a is formed on a silicon substrate 1 with an intermediary of a gate oxide film 2, and an oxide film 4 is formed to cover the surface of the silicon substrate. After an inter-layer dielectric film 6 is grown on the oxide film 4 by LPCVD, this inter-layer dielectric film 6 is put to rapid thermal processing at 700° C. to 800° C. for about 60 seconds to remove the water content of the inter-layer dielectric film 6. This eliminates chances of insulation deterioration when semi-finished wafers are put into long-term storage. After the steps just before data writing have been finished, the wafers can be put into long-term storage, so that time from decision of data to write until product completion can be reduced.
摘要翻译：一种用于制造只读存储器的方法。在晶片上的每个存储单元中，在具有栅极氧化膜2的介质的硅衬底1上形成栅电极3a，并且形成氧化物膜4以覆盖硅衬底的表面。在通过LPCVD在氧化物膜4上生长层间电介质膜6之后，将该层间电介质膜6在700℃〜800℃进行快速热处理约60秒以除去含水量这消除了半成品晶片长期保存时绝缘劣化的可能性。在完成数据写入之后的步骤之后，晶片可以进行长期存储，从而可以减少从数据到写入到产品完成的时间。

7. 发明授权

US5552967A Portable electronic apparatus having a housing for containing circuits board and functional components 失效
标题翻译：具有用于容纳电路板和功能部件的外壳的便携式电子设备
公开(公告)号：US5552967A
公开(公告)日：1996-09-03
申请号：US216923
申请日：1994-03-23
申请人： Masaru Seto , Kazuya Shibasaki , Satoru Arai
发明人： Masaru Seto , Kazuya Shibasaki , Satoru Arai
IPC分类号： G06F1/16 , G06F1/20 , H05K9/00
CPC分类号： G06F1/1635 , G06F1/1616 , G06F1/1632 , G06F1/1656 , G06F1/1658 , G06F1/166 , G06F1/1683 , G06F1/203
摘要： A portable electronic apparatus comprising a box-shaped housing made of synthetic resin and a circuit unit incorporated in the housing. The circuit unit has a circuit board having circuit parts which generate noise while operating, a frame supporting the circuit board, and a shield formed of a metal plate and surrounding the circuit board and the frame. The frame is a molding made of synthetic resin or a cast product made of metal such as magnesium.
摘要翻译：一种便携式电子设备，包括由合成树脂制成的盒形壳体和结合在壳体中的电路单元。电路单元具有电路板，该电路板具有在操作时产生噪声的电路部分，支撑电路板的框架以及由金属板形成并围绕电路板和框架的屏蔽。框架是由合成树脂制成的模制品或由诸如镁的金属制成的铸造产品。

8. 发明授权

US07618861B2 Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions 失效
标题翻译：使用多个元件隔离区域和垂直的广泛的器件区域制造非易失性存储器件的方法
公开(公告)号：US07618861B2
公开(公告)日：2009-11-17
申请号：US11785919
申请日：2007-04-20
申请人： Masayuki Masukawa , Masaru Seto , Keisuke Oosawa
发明人： Masayuki Masukawa , Masaru Seto , Keisuke Oosawa
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , H01L27/11521 , H01L27/11568 , H01L29/66825 , H01L29/66833 , H01L29/7923
摘要： Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films therebelow are formed so as to largely face a control gate. The control gate between the separate first and second floating gates faces to the channel region via thin interlayer insulating layer. Therefore, a semiconductor device according to the present invention can inject electrons the charge storage film without causing writing errors in a writing operation, and therefore can increase in reliability thereof, control a writing voltage, prevent loss of the electrons stored in the charge storage film, and reliably apply a bias voltage to a channel region.
摘要翻译：形成分开的第一和第二浮栅，用于将具有沟道区和第一和第二主电极区的晶体管结构中转移的载流子吸引到其周围的电荷存储膜中，以便大量面对控制栅极。分离的第一和第二浮栅之间的控制栅经由薄层间绝缘层面对沟道区。因此，根据本发明的半导体器件可以在电荷存储膜中注入电子而不会在写入操作中引起写入错误，因此可以提高其可靠性，控制写入电压，防止存储在电荷存储膜中的电子的损失并且可靠地将偏置电压施加到沟道区域。

9. 发明授权

US07336762B2 Scan program communication method and X-ray CT apparatus 失效
标题翻译：扫描程序通信方法和X射线CT装置
公开(公告)号：US07336762B2
公开(公告)日：2008-02-26
申请号：US11179872
申请日：2005-07-12
申请人： Masaru Seto , Yasushi Sato
发明人： Masaru Seto , Yasushi Sato
IPC分类号： G01N23/00
CPC分类号： A61B6/032 , G06F19/00
摘要： An X-ray CT apparatus includes a host and a scanner that executes a scan based on a scan program communicated from the host by means of communicating means. The X-ray CT apparatus also includes a communicating means which collectively communicate the calculated values of X-ray applied amounts at every scan positions or original data for the calculation of the amount of X-ray application even with respect to unprogrammed scan positions. Each of the calculated values of X-ray applied amounts corresponds to a tube current value of an X-ray tube. The original data for the calculation of the amount of X-ray application corresponds to X-ray penetrated image data of a subject.
摘要翻译： X射线CT装置包括主机和扫描器，其基于通过通信装置从主机传送的扫描程序执行扫描。 X射线CT装置还包括通信装置，其在每个扫描位置或原始数据中共同传送计算的X射线量值，以用于计算X射线应用量，即使相对于未编程的扫描位置。 X射线施加量的计算值中的每一个对应于X射线管的管电流值。用于计算X射线应用量的原始数据对应于被摄体的X射线穿透图像数据。

10. 发明申请

US20060202260A1 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20060202260A1
公开(公告)日：2006-09-14
申请号：US11364175
申请日：2006-03-01
申请人： Masaru Seto , Junya Maneki
发明人： Masaru Seto , Junya Maneki
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42336 , H01L29/7881
摘要： A semiconductor memory device includes: a laminated body which has a floating-gate-forming groove and includes a semiconductor support layer, an impurity diffusion layer, an ion-implantation-damage protection film, and an interlayer insulating film; a floating-gate-insulating film; a floating gate disposed on the floating-gate-insulating film so as to be buried in the floating-gate-forming groove; a control-gate-insulating film disposed on a surface area of the floating gate; and a control gate disposed on the control-gate-insulating film above the floating gate, wherein the floating-gate-insulating film contacts with the semiconductor support layer at the bottom of the floating-gate-forming groove, the floating-gate-insulating film contacts with the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film at the side wall of the floating-gate-forming groove.
摘要翻译：半导体存储器件包括：具有浮栅形成槽并且包括半导体支撑层，杂质扩散层，离子注入损伤保护膜和层间绝缘膜的层叠体; 浮栅绝缘膜; 设置在所述浮栅绝缘膜上以浮置在所述浮栅形成沟槽中的浮置栅极; 设置在所述浮动栅极的表面区域上的控制栅极绝缘膜; 以及控制栅极，其设置在所述浮栅上方的所述控制栅极绝缘膜上，其中所述浮栅绝缘膜与所述浮栅形成槽的底部处的所述半导体支撑层接触，所述浮栅绝缘膜与杂质扩散层的膜接触，离子注入损伤保护膜和浮栅形成槽的侧壁处的层间绝缘膜。

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