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    • 7. 发明授权
    • Chemical mechanical polishing endpoinat detection
    • 化学机械抛光endpoinat检测
    • US06709314B2
    • 2004-03-23
    • US10005658
    • 2001-11-07
    • Tony S. KaushalChuong Quang DamYongqi Hu
    • Tony S. KaushalChuong Quang DamYongqi Hu
    • B24B4900
    • B24B37/013B24B49/10
    • Endpoint of a chemical mechanical polishing process is detected by monitoring acoustical emissions produced by contact between a polishing pad and a wafer. The acoustic information is resolved into a frequency spectrum utilizing techniques such as fast Fourier transformation. Characteristic changes in frequency spectra of the acoustic emissions reveal transition in polishing between different material layers. CMP endpoint indicated by a change in the acoustic frequency spectrum is validated by correlation with other sensed properties, including but not limited to time-based changes in amplitude of acoustic emissions, frictional coefficient, capacitance, and/or resistance. CMP endpoint revealed by a change in acoustic frequency spectrum can also be validated by comparison with characteristic frequency spectra obtained at endpoints or polishing transitions of prior operational runs.
    • 通过监测由抛光垫和晶片之间的接触产生的声发射来检测化学机械抛光工艺的端点。 利用诸如快速傅里叶变换的技术将声信息解析成频谱。 声发射频谱的特征变化显示不同材料层之间的抛光过渡。 由声频谱变化指示的CMP端点通过与其他感测特性的相关性来验证,包括但不限于声发射幅度,摩擦系数,电容和/或电阻的基于时间的变化。 通过声频频谱变化揭示的CMP终点也可以通过与在先前操作运行的端点或抛光转换处获得的特征频谱进行比较来验证。