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1. 发明授权

US06790768B2 Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects 失效
标题翻译：用于抛光基底的方法和装置包括具有减小的形貌缺陷的导电和介电材料
公开(公告)号：US06790768B2
公开(公告)日：2004-09-14
申请号：US10025144
申请日：2001-12-18
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

2. 发明授权

US06960521B2 Method and apparatus for polishing metal and dielectric substrates 失效
标题翻译：抛光金属和电介质基板的方法和装置
公开(公告)号：US06960521B2
公开(公告)日：2005-11-01
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

3. 发明申请

US20050032381A1 Method and apparatus for polishing metal and dielectric substrates 失效
公开(公告)号：US20050032381A1
公开(公告)日：2005-02-10
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

4. 发明授权

US07232761B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US07232761B2
公开(公告)日：2007-06-19
申请号：US10924417
申请日：2004-08-24
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

5. 发明授权

US06780773B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US06780773B2
公开(公告)日：2004-08-24
申请号：US10193469
申请日：2002-07-11
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21641
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

6. 发明申请

US20050026442A1 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US20050026442A1
公开(公告)日：2005-02-03
申请号：US10924417
申请日：2004-08-24
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768 , H01L21/302 , H01L21/44
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

7. 发明授权

US06783432B2 Additives for pressure sensitive polishing compositions 失效
标题翻译：用于压敏抛光组合物的添加剂
公开(公告)号：US06783432B2
公开(公告)日：2004-08-31
申请号：US09874177
申请日：2001-06-04
申请人： Jui-Lung Li , Yuchun Wang , Rajeev Bajaj , Fred C. Redeker
发明人： Jui-Lung Li , Yuchun Wang , Rajeev Bajaj , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02
摘要： A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.
摘要翻译：一种用于平坦化衬底的方法和组合物。组合物包括压敏溶液和用于与金属或氧化金属络合的一种或多种化学试剂。一种从基材表面除去含铜层的方法，包括将组合物施用于抛光介质，所述组合物包含压敏溶液，以及一种或多种与金属或氧化金属络合的化学试剂，以及研磨该基材表面与抛光介质。

8. 发明授权

US08011084B2 Method for fabricating narrow magnetic read width TMR/CPP sensors 有权
标题翻译：制造窄磁读宽TMR / CPP传感器的方法
公开(公告)号：US08011084B2
公开(公告)日：2011-09-06
申请号：US12184054
申请日：2008-07-31
申请人： Quang Le , Jui-Lung Li
发明人： Quang Le , Jui-Lung Li
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a manufacturing a magnetoresistive sensor that allows the sensor to be constructed with a very narrow and well controlled track width. The method includes depositing a layer of diamond like carbon over a series of sensor layers. A first mask is then formed to define a sensor, and an ion milling is performed to remove sensor material not protected by the first mask. Then, a second mask is formed, and a hard bias layer is deposited to the thickness of the sensor layers. The second mask is then lifted off and a CMP is performed to remove the first mask structure. Because all areas other than the area directly over the sensor are substantially planar a quick, gentle CMP can be used to remove the first mask layer even if the first mask is small, such as for definition of a very narrow track-width sensor.
摘要翻译：一种用于制造磁阻传感器的方法，该传感器允许传感器被构造成具有非常窄且良好控制的轨道宽度。该方法包括在一系列传感器层上沉积一层类似金刚石的碳。然后形成第一掩模以限定传感器，并且执行离子铣削以去除未被第一掩模保护的传感器材料。然后，形成第二掩模，并且在传感器层的厚度上沉积硬偏置层。然后将第二掩模剥离并执行CMP以除去第一掩模结构。由于除传感器正上方的区域以外的所有区域基本上是平面的（由于第二掩模的移除和硬偏置材料的低水平），可以使用快速，温和的CMP来去除第一掩模层，即使第一个掩模很小，如定义非常窄的轨道宽度传感器。

9. 发明申请

US20100128392A1 PERPENDICULAR WRITE HEAD HAVING A STEPPED FLARE STRUCTURE AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：具有阶梯式结构的平头书写头及其制造方法
公开(公告)号：US20100128392A1
公开(公告)日：2010-05-27
申请号：US12646858
申请日：2009-12-23
申请人： Christian Rene Bonhote , Thomas Dudley Boone, JR. , Quang Le , Jui-Lung Li , Jeffrey S. Lille , Scott Arthur MacDonald , Neil Leslie Robertson , Xhavin Sinha , Petrus Antonius Van Der Heijden
发明人： Christian Rene Bonhote , Thomas Dudley Boone, JR. , Quang Le , Jui-Lung Li , Jeffrey S. Lille , Scott Arthur MacDonald , Neil Leslie Robertson , Xhavin Sinha , Petrus Antonius Van Der Heijden
IPC分类号： G11B5/127
CPC分类号： G11B5/3146 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3166 , G11B5/3169
摘要： A magnetic write head for data recording having a magnetic write pole with a stepped magnetic shell structure that defines a secondary flare point. The secondary flare point defined by the magnetic shell portion can be more tightly controlled with respect to its distance from the air bearing surface (ABS) of the write head than can a traditional flare point that is photolithographically on the main pole structure. This allows the effective flare point of the write head to be moved much closer to the ABS than would otherwise be possible using currently available tooling and photolithography techniques. The write head also includes a non-magnetic spacer layer formed over the magnetic shell structure and a trailing magnetic shield, a portion of which is formed over the non-magnetic spacer.
摘要翻译：一种用于数据记录的磁写头，具有限定二次闪光点的阶梯状磁性壳结构的磁性写入极。由磁性壳体部分限定的次级火炬点可以相对于与写入磁头的空气轴承表面（ABS）的距离比在主极结构上光刻的传统闪光点更加严格地控制。这使得使用当前可用的工具和光刻技术可以使写入头的有效喇叭点移动得更接近ABS。写头还包括形成在磁性壳结构上的非磁性间隔层和尾部磁屏蔽，其一部分形成在非磁性间隔物上。

10. 发明申请

US20100126001A1 Method for self aligning a lapping guide with a structure of a magnetic write head 有权
标题翻译：用于将研磨引导件与磁性写入头的结构自对准的方法
公开(公告)号：US20100126001A1
公开(公告)日：2010-05-27
申请号：US12646884
申请日：2009-12-23
申请人： Christian Rene Bonhote , Thomas Budley Boone, JR. , Quang Le , Jui-Lung Li , Jeffrey S. Lille , Scott Arthur MacDonald , Neil Leslie Robertson , Xhavin Sinha , Petrus Antonius Van Der Heijden
发明人： Christian Rene Bonhote , Thomas Budley Boone, JR. , Quang Le , Jui-Lung Li , Jeffrey S. Lille , Scott Arthur MacDonald , Neil Leslie Robertson , Xhavin Sinha , Petrus Antonius Van Der Heijden
IPC分类号： G11B5/127
CPC分类号： G11B5/3146 , G11B5/11 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3166 , G11B5/3169
摘要： A method for self aligning a lapping guide with a structure of a write pole. A write pole is formed over a substrate and an electrically conductive material lapping guide material is deposited in a location that is removed from the write pole. A mask is then formed over a portion of the write pole and a portion of the electrically conductive material. A material removal process such as reactive ion etching can then be performed to remove a portion of the magnetic material that is not protected by the mask structure. An magnetic material is then electroplated over the write pole with the write pole, with the mask still in place. In this way, the electroplated material has an edge that is self aligned with an edge of the electrically conductive lapping guide material, both being defined by the same mask structure.
摘要翻译：一种用于将研磨导向器与写入杆的结构自对准的方法。写入极在衬底上形成，并且导电材料研磨引导材料沉积在从写柱移除的位置。然后在写入极的一部分和导电材料的一部分上形成掩模。然后可以执行诸如反应离子蚀刻的材料去除处理以去除未被掩模结构保护的磁性材料的一部分。然后将磁性材料用写入极电镀在写入极上，同时掩模仍然在位。以这种方式，电镀材料具有与导电研磨导向材料的边缘自对准的边缘，两者都由相同的掩模结构限定。

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