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1. 发明授权

US06790768B2 Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects 失效
标题翻译：用于抛光基底的方法和装置包括具有减小的形貌缺陷的导电和介电材料
公开(公告)号：US06790768B2
公开(公告)日：2004-09-14
申请号：US10025144
申请日：2001-12-18
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

2. 发明授权

US06960521B2 Method and apparatus for polishing metal and dielectric substrates 失效
标题翻译：抛光金属和电介质基板的方法和装置
公开(公告)号：US06960521B2
公开(公告)日：2005-11-01
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony S. Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred C. Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
摘要翻译：提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电材料。

3. 发明申请

US20050032381A1 Method and apparatus for polishing metal and dielectric substrates 失效
公开(公告)号：US20050032381A1
公开(公告)日：2005-02-10
申请号：US10939750
申请日：2004-09-13
申请人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred Redeker
发明人： Yongsik Moon , David Mai , Kapila Wijekoon , Rajeev Bajaj , Rahul Surana , Yongqi Hu , Tony Kaushal , Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , Fred Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

4. 发明授权

US07070480B2 Method and apparatus for polishing substrates 失效
标题翻译：抛光基板的方法和装置
公开(公告)号：US07070480B2
公开(公告)日：2006-07-04
申请号：US10269107
申请日：2002-10-10
申请人： Yongsik Moon , Kapila Wijekoon
发明人： Yongsik Moon , Kapila Wijekoon
IPC分类号： B24B1/00
CPC分类号： B24B37/26
摘要： Method and apparatus for polishing substrates. A chemical mechanical polishing article comprises a body and a patterned surface. The patterned surface comprises a plurality of slurry distribution grooves and a plurality of islands on the body. Each of the plurality of the islands comprises a base portion, a polishing surface disposed thereon, and a contoured surface disposed therebetween. The base portion comprises one or more sidewalls defining at least a portion of the plurality of slurry distribution grooves. The polishing surface is smaller than the base portion, the difference therebetween attributable to the contoured surface. In a particular embodiment, conductive materials and low k dielectric films are polished with reduced or minimum substrate surface damage.
摘要翻译：抛光基板的方法和装置。化学机械抛光制品包括主体和图案化表面。图案化表面包括多个浆料分配槽和主体上的多个岛。所述多个岛中的每一个包括基部，设置在其上的抛光表面和设置在其间的轮廓表面。基部包括限定多个浆料分配槽的至少一部分的一个或多个侧壁。抛光表面小于基部，其差异归因于轮廓表面。在特定实施例中，导电材料和低k电介质膜被抛光，具有降低或最小的衬底表面损伤。

5. 发明申请

US20050221723A1 Multi-layer polishing pad for low-pressure polishing 有权
标题翻译：用于低压抛光的多层抛光垫
公开(公告)号：US20050221723A1
公开(公告)日：2005-10-06
申请号：US11043361
申请日：2005-01-26
申请人： Alain Duboust , Shou-Sung Chang , Wei Lu , Siew Neo , Yan Wang , Antoine Manens , Yongsik Moon
发明人： Alain Duboust , Shou-Sung Chang , Wei Lu , Siew Neo , Yan Wang , Antoine Manens , Yongsik Moon
IPC分类号： B24B1/00 , B24B37/013 , B24B37/04 , B24B37/20 , B24B37/22 , B24B37/26 , B24D11/02 , B24D99/00
CPC分类号： B24B37/013 , B24B37/046 , B24B37/205 , B24B37/22 , B24B37/26 , B24D11/02
摘要： A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.
摘要翻译：抛光垫具有固定到抛光层的抛光层和背衬层。抛光层具有抛光表面，第一厚度，第一可压缩性和约40至80肖氏D之间的硬度。背衬层具有大于第一可压缩性的第二厚度并具有第二可压缩性。第一厚度，第一可压缩性，第二厚度和第二可压缩性使得抛光表面在1.5psi或更小的施加压力下偏转大于抛光层的厚度不均匀性。

6. 发明申请

US20100267318A1 POLISHING PAD WITH PROJECTING PORTION 审中-公开
标题翻译：抛光垫与投影部分
公开(公告)号：US20100267318A1
公开(公告)日：2010-10-21
申请号：US12823872
申请日：2010-06-25
申请人： Alain Duboust , Shou-Sung Chang , Wei Lu , Siew Neo , Yan Wang , Antoine P. Manens , Yongsik Moon
发明人： Alain Duboust , Shou-Sung Chang , Wei Lu , Siew Neo , Yan Wang , Antoine P. Manens , Yongsik Moon
IPC分类号： B24D11/02
CPC分类号： B24B37/013 , B24B37/046 , B24B37/205 , B24B37/22 , B24B37/26 , B24D11/02
摘要： A polishing pad include a polishing layer having a polishing surface and a backing layer on a side of the polishing layer opposite the polishing surface. An outer edge of the polishing layer overhangs an outer edge of the backing layer.
摘要翻译：抛光垫包括在抛光层的与研磨表面相对的一侧上具有抛光表面和背衬层的抛光层。抛光层的外边缘突出在背衬层的外边缘上。

7. 发明授权

US08066552B2 Multi-layer polishing pad for low-pressure polishing 有权
标题翻译：用于低压抛光的多层抛光垫
公开(公告)号：US08066552B2
公开(公告)日：2011-11-29
申请号：US11043361
申请日：2005-01-26
申请人： Alain Duboust , Shou-Sung Chang , Wei Lu , Siew Neo , Yan Wang , Antoine P. Manens , Yongsik Moon
发明人： Alain Duboust , Shou-Sung Chang , Wei Lu , Siew Neo , Yan Wang , Antoine P. Manens , Yongsik Moon
IPC分类号： B24B29/00
CPC分类号： B24B37/013 , B24B37/046 , B24B37/205 , B24B37/22 , B24B37/26 , B24D11/02
摘要： A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.
摘要翻译：抛光垫具有固定到抛光层的抛光层和背衬层。抛光层具有抛光表面，第一厚度，第一可压缩性和约40至80肖氏D之间的硬度。背衬层具有大于第一可压缩性的第二厚度并具有第二可压缩性。第一厚度，第一可压缩性，第二厚度和第二可压缩性使得抛光表面在1.5psi或更小的施加压力下偏转大于抛光层的厚度不均匀性。

8. 发明申请

US20140061732A1 METHOD AND DEVICE TO ACHIEVE SELF-STOP AND PRECISE GATE HEIGHT 有权
标题翻译：实现自停和精确门高度的方法和设备
公开(公告)号：US20140061732A1
公开(公告)日：2014-03-06
申请号：US13596808
申请日：2012-08-28
申请人： Hong Yu , Wang Haiting , Yongsik Moon , James Lee , Huang Liu
发明人： Hong Yu , Wang Haiting , Yongsik Moon , James Lee , Huang Liu
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L29/165 , H01L21/76837 , H01L29/66545 , H01L29/66628 , H01L29/66636
摘要： A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.
摘要翻译：公开了一种能够制造具有低栅极高度变化的RMG器件和基本平坦的地形和结果器件的方法。实施例包括：在衬底上提供两个虚拟栅极电极，每个在一对间隔物之间; 在两个虚拟栅电极之间提供源/漏区; 以及在所述两个伪栅极电极和所述源极/漏极区域上形成第一氮化物层，其中所述第一氮化物层包括在所述伪栅极电极之上的第一部分和所述源极/漏极区域上的第二部分，并且所述第二部分具有上表面与虚拟栅电极的上表面基本上共面。

9. 发明授权

US08241927B2 Methods relating to capacitive monitoring of layer characteristics during back end-of the-line processing 有权
标题翻译：关于在线后处理中的层特性的电容监测的方法
公开(公告)号：US08241927B2
公开(公告)日：2012-08-14
申请号：US12579216
申请日：2009-10-14
申请人： Jihong Choi , Yongsik Moon , Roderick Augur , Eden Zielinski
发明人： Jihong Choi , Yongsik Moon , Roderick Augur , Eden Zielinski
IPC分类号： H01L21/66
CPC分类号： H01L22/34 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided that relate to the capacitive monitoring of characteristic pertaining to layer formed during the back end-of-the-line (BEOL) processing of a semiconductor device. In one embodiment, a method includes the steps of forming a first capacitor array including first and second overlying contacts each formed in a different one of the plurality of BEOL layers, measuring the interlayer capacitance between the first and second overlying contacts, and converting the measured interlayer capacitance to a distance between the first and second overlying contacts.
摘要翻译：提供了涉及在半导体器件的后端（BEOL）处理期间形成的层的特性的电容性监测的方法。在一个实施例中，一种方法包括以下步骤：形成第一电容器阵列，该第一电容器阵列包括第一和第二上覆触点，每个形成在多个BEOL层中的不同的一个中，测量第一和第二覆盖触点之间的层间电容，层间电容与第一和第二上覆触点之间的距离。

10. 发明授权

US08962407B2 Method and device to achieve self-stop and precise gate height 有权
标题翻译：实现自动，精确门高的方法和装置
公开(公告)号：US08962407B2
公开(公告)日：2015-02-24
申请号：US13596808
申请日：2012-08-28
申请人： Hong Yu , Wang Haiting , Yongsik Moon , James Lee , Huang Liu
发明人： Hong Yu , Wang Haiting , Yongsik Moon , James Lee , Huang Liu
IPC分类号： H01L21/338
CPC分类号： H01L29/165 , H01L21/76837 , H01L29/66545 , H01L29/66628 , H01L29/66636
摘要： A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.
摘要翻译：公开了一种能够制造具有低栅极高度变化的RMG器件和基本平坦的地形和结果器件的方法。实施例包括：在衬底上提供两个虚拟栅极电极，每个在一对间隔物之间; 在两个虚拟栅电极之间提供源/漏区; 以及在所述两个伪栅极电极和所述源极/漏极区域上形成第一氮化物层，其中所述第一氮化物层包括在所述伪栅极电极之上的第一部分和所述源极/漏极区域上的第二部分，并且所述第二部分具有上表面与虚拟栅电极的上表面基本上共面。

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