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1. 发明授权

US08883552B2 MWT architecture for thin SI solar cells 有权
标题翻译：薄SI太阳能电池的MWT架构
公开(公告)号：US08883552B2
公开(公告)日：2014-11-11
申请号：US13208302
申请日：2011-08-11
申请人： Ashish Asthana , Tirunelveli S. Ravi , Kramadhati V. Ravi , Somnath Nag
发明人： Ashish Asthana , Tirunelveli S. Ravi , Kramadhati V. Ravi , Somnath Nag
IPC分类号： H01L21/00 , H01L31/18 , H01L31/068 , H01L31/0224
CPC分类号： H01L31/02245 , H01L31/02168 , H01L31/03921 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field.
摘要翻译：描述了通过太阳能电池制造金属封套的方法和用于薄硅太阳能电池的模块，包括外延硅太阳能电池。这些金属包裹太阳能电池具有用于基极和发射极触点的平面后接触几何形状。通过太阳能电池制造金属卷可以包括：通过密封剂将装置的发射极侧附接到太阳能玻璃上的光伏器件，该器件包括器件发射极上的母线; 通过设备基座和发射器形成通孔，终端在母线中的通孔; 在通孔的表面和基底的后表面上沉积保形电介质膜; 从所述通孔的端部去除所述共形绝缘膜的部分，以暴露所述母线和所述基座的场区域; 并且形成与母线和太阳能电池背面上的场区分开的电接触。太阳能电池可以包括外延沉积的硅并且可以包括外延沉积的背表面场。

2. 发明申请

US20130056044A1 PHOTOVOLTAIC MODULE FABRICATION WITH THIN SINGLE CRYSTAL EPITAXIAL SILICON DEVICES 审中-公开
标题翻译：具有薄单晶外延硅设备的光电模块制造
公开(公告)号：US20130056044A1
公开(公告)日：2013-03-07
申请号：US13566960
申请日：2012-08-03
申请人： Kramadhati V. Ravi , Tirunelveli S. Ravi , Ashish Asthana , Somnath Nag
发明人： Kramadhati V. Ravi , Tirunelveli S. Ravi , Ashish Asthana , Somnath Nag
IPC分类号： H01L31/042 , H01L31/18 , H01L31/045
CPC分类号： H01L31/0504 , H01L31/02363 , H01L31/048 , H01L31/068 , H01L31/1896 , Y02E10/547
摘要： Photovoltaic modules including a plurality of solar cells bonded to a module back sheet are described herein, wherein each solar cell includes a superstrate bonded to a front side of a photovoltaic device to facilitate handling of very thin photovoltaic devices during fabrication of the module. Modules may also include module front sheets and the solar cells may include bottom sheets. The modules may be made of flexible materials, and may be foldable. Fabrication processes include tabbing photovoltaic devices prior to attaching the individual superstrates.
摘要翻译：这里描述了包括结合到模块背板的多个太阳能电池的光伏模块，其中每个太阳能电池包括结合到光伏器件的前侧的顶板，以便于在模块制造期间处理非常薄的光伏器件。模块还可以包括模块前片，并且太阳能电池可以包括底片。模块可以由柔性材料制成，并且可以是可折叠的。制造工艺包括在连接各个覆盖物之前贴上光伏器件。

3. 发明申请

US20120040487A1 MWT ARCHITECTURE FOR THIN SI SOLAR CELLS 有权
标题翻译：微型太阳能电池的MWT结构
公开(公告)号：US20120040487A1
公开(公告)日：2012-02-16
申请号：US13208302
申请日：2011-08-11
申请人： Ashish Asthana , Tirunelveli S. Ravi , Kramadhati V. Ravi , Somnath Nag
发明人： Ashish Asthana , Tirunelveli S. Ravi , Kramadhati V. Ravi , Somnath Nag
IPC分类号： H01L31/18
CPC分类号： H01L31/02245 , H01L31/02168 , H01L31/03921 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field.
摘要翻译：描述了通过太阳能电池制造金属封套的方法和用于薄硅太阳能电池的模块，包括外延硅太阳能电池。这些金属包裹太阳能电池具有用于基极和发射极触点的平面后接触几何形状。通过太阳能电池制造金属卷可以包括：通过密封剂将装置的发射极侧附接到太阳能玻璃上的光伏器件，该器件包括器件发射极上的母线; 通过设备基座和发射器形成通孔，终端在母线中的通孔; 在通孔的表面和基底的后表面上沉积保形电介质膜; 从所述通孔的端部去除所述共形绝缘膜的部分，以暴露所述母线和所述基座的场区域; 并且形成与母线和太阳能电池背面上的场区分开的电接触。太阳能电池可以包括外延沉积的硅并且可以包括外延沉积的背表面场。

4. 发明授权

US08809097B1 Passivated emitter rear locally patterned epitaxial solar cell 有权
标题翻译：钝化发射体后局部图案化外延太阳能电池
公开(公告)号：US08809097B1
公开(公告)日：2014-08-19
申请号：US13241112
申请日：2011-09-22
申请人： Kramadhati V. Ravi , Tirunelveli S. Ravi
发明人： Kramadhati V. Ravi , Tirunelveli S. Ravi
IPC分类号： H01L21/00
CPC分类号： H01L31/022433 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/028 , H01L31/03682 , H01L31/056 , H01L31/1804 , H01L31/1868 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Passivated emitter rear local epitaxy (PERL-e) thin Si solar cells may be formed with a heavily doped epitaxial back surface field (BSF) layer, which is patterned to form well spaced point contacts to the silicon base on the rear of the solar cell. The back side of the cell may be finished with a dielectric passivation layer and a metallization layer for making electrical contact to the cell. PERL-e thick Si solar cells may be formed with heavily doped epitaxial films as the back point contacts, where the point contacts are defined by the provision of a selectively patterned thermal oxide on the rear wafer surface. Furthermore, absorption of longer wavelength, infrared (IR), light in thin silicon solar cells may be improved by the addition of a dielectric stack on the rear surface of the solar cell (a back reflector).
摘要翻译：钝化的发射体后局部外延（PERL-e）薄Si太阳能电池可以用重掺杂的外延后表面场（BSF）层形成，其被图案化以形成与太阳能电池背面上的硅基极好的间隔开的点接触。电池的背面可以用电介质钝化层和用于与电池电接触的金属化层来完成。 PERL-e厚Si太阳能电池可以用重掺杂的外延膜形成作为背点接触，其中通过在后晶片表面上提供选择性图案化的氧化物来限定点接触。此外，可以通过在太阳能电池的背面（背面反射体）上添加电介质叠层来改善薄硅太阳能电池中较长波长的红外（IR）光的吸收。

5. 发明申请

US20110056532A1 Method for manufacturing thin crystalline solar cells pre-assembled on a panel 审中-公开
标题翻译：制造预先组装在面板上的薄晶体太阳能电池的方法
公开(公告)号：US20110056532A1
公开(公告)日：2011-03-10
申请号：US12556357
申请日：2009-09-09
申请人： Tirunelveli S. Ravi , Ananda Kumar , Kramadhati V. Ravi
发明人： Tirunelveli S. Ravi , Ananda Kumar , Kramadhati V. Ravi
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/0488 , H01L31/0516 , H01L31/0682 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic (PV) cell panel wherein each of a plurality of silicon donor wafers has a separation layer formed on its upper surface, e.g., porous anodically etched silicon. On each donor wafer, a PV cell is then partially completed including at least part of inter-cell interconnect, after which plural donor wafers are laminated to a backside substrate or frontside. All of the donor wafers are then separated from the partially completed PV cells in an exfoliation process, followed by simultaneous completion of the remaining PV cell structures on PV cells. Finally, a second lamination to a frontside glass or a backside panel completes the PV cell panel. The separated donor wafers may be reused in forming other PV cells. Use of epitaxial deposition to form the layers of the PV cells enables improved dopant distributions and sharper junction profiles for improved PV cell efficiency.
摘要翻译：一种用于制造光伏（PV）电池板的方法，其中多个硅供体晶片中的每一个具有在其上表面上形成的分离层，例如多孔阳极蚀刻的硅。在每个施主晶片上，PV单元然后部分地完成，包括至少部分单元间互连，之后将多个施主晶片层压到背面基板或前侧。然后将所有供体晶片在剥离过程中与部分完成的PV电池分离，随后在PV电池上同时完成剩余的PV电池结构。最后，向前侧玻璃或后侧面板的第二层压完成PV电池面板。分离的供体晶片可以重新用于形成其它PV电池。使用外延沉积来形成PV电池的层可以改善掺杂剂分布和更清晰的接线图，以提高PV电池效率。

6. 发明授权

US6132517A Multiple substrate processing apparatus for enhanced throughput 失效
标题翻译：用于提高吞吐量的多基板处理装置
公开(公告)号：US6132517A
公开(公告)日：2000-10-17
申请号：US804505
申请日：1997-02-21
申请人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Kramadhati V. Ravi
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Kramadhati V. Ravi
IPC分类号： H01L21/677 , C23C14/56 , C23C16/458 , H01L21/02 , H01L21/205 , H01L21/683 , C23C16/00
CPC分类号： H01L21/6831 , C23C14/568 , C23C16/4586
摘要： A dual wafer processing apparatus (4) includes a chamber housing (14) defining an interior and having upper, lower and central portions (18, 20, 16). An electrostatic chuck (34) has electrostatic chucking surfaces (38, 40) on opposite sides. The chuck is rotatably mounted within the chamber housing so that the chucking surfaces face the upper and lower portions of the chamber housing. After a wafer (36) is positioned on a chucking surface, electrostatic forces are used to maintain the wafer secured to the chucking surface. The chuck is then rotated 180.degree. to permit placement of a second wafer on the second chucking surface. Processing of the two wafers occurs simultaneously. Electrostatic chucking surfaces could be replaced by mechanical wafer clamps.
摘要翻译：双晶片处理设备（4）包括限定内部并具有上部，下部和中心部分（18,20,16）的腔室壳体（14）。静电吸盘（34）在相对侧具有静电吸附表面（38,40）。卡盘可旋转地安装在腔室壳体内，使得卡盘表面面对腔室壳体的上部和下部。在将晶片（36）定位在卡盘表面上之后，使用静电力来保持晶片固定在卡盘表面上。然后将卡盘旋转180°以允许将第二晶片放置在第二卡盘表面上。两个晶片的处理同时发生。静电吸盘表面可以用机械晶片夹来代替。

7. 发明申请

US20090227063A1 Integrated method and system for manufacturing monolithic panels of crystalline solar cells 有权
标题翻译：晶体太阳能电池单块面板的集成方法和系统
公开(公告)号：US20090227063A1
公开(公告)日：2009-09-10
申请号：US12399248
申请日：2009-03-06
申请人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana
发明人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana
IPC分类号： H01L31/18 , H01L21/306 , B44C1/22
CPC分类号： H01L31/1876 , H01L21/68728 , H01L31/048 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.
摘要翻译：公开了一种制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定在基座上的单晶硅母晶片的二维阵列上。在母晶片的表面上阳极氧化多孔硅分离层。然后使多孔膜平滑以形成用于外延膜生长的合适表面。使用外延反应器来生长形成PV电池结构的n型和p型膜。与n层和p层的接触被沉积，然后将玻璃层粘合到PV电池阵列上。然后通过剥离运动将多孔硅膜分离穿过所有附着在上面的细胞，然后在PV电池阵列上附加强化层。母晶片的阵列可以重复使用多次，从而减少完成的太阳能电池板的材料成本。

8. 发明授权

US08030119B2 Integrated method and system for manufacturing monolithic panels of crystalline solar cells 有权
标题翻译：晶体太阳能电池单块面板的集成方法和系统
公开(公告)号：US08030119B2
公开(公告)日：2011-10-04
申请号：US12399248
申请日：2009-03-06
申请人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana
发明人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana
IPC分类号： H01L21/00
CPC分类号： H01L31/1876 , H01L21/68728 , H01L31/048 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.
摘要翻译：公开了一种制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定在基座上的单晶硅母晶片的二维阵列上。在母晶片的表面上阳极氧化多孔硅分离层。然后使多孔膜平滑以形成用于外延膜生长的合适表面。使用外延反应器来生长形成PV电池结构的n型和p型膜。与n层和p层的接触被沉积，然后将玻璃层粘合到PV电池阵列上。然后通过剥离运动将多孔硅膜分离穿过所有附着在上面的细胞，然后在PV电池阵列上附加强化层。母晶片的阵列可以重复使用多次，从而减少完成的太阳能电池板的材料成本。

9. 发明授权

US08900399B2 Integrated method and system for manufacturing monolithic panels of crystalline solar cells 有权
标题翻译：晶体太阳能电池单块面板的集成方法和系统
公开(公告)号：US08900399B2
公开(公告)日：2014-12-02
申请号：US13050807
申请日：2011-03-17
申请人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana , Kyle Ross Tantiwong , Visweswaren Sivaramakrishnan
发明人： Tirunelveli S. Ravi , Ananda H. Kumar , Ashish Asthana , Kyle Ross Tantiwong , Visweswaren Sivaramakrishnan
IPC分类号： C23F1/00 , H01L31/18 , H01L31/048 , H01L31/068
CPC分类号： H01L31/1876 , H01L21/68728 , H01L31/048 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： An anodic etching system for simultaneously etching a multiplicity of substrates comprises: an etching tank for containing therein an etchant solution; a power supply connected between a first electrode and a second electrode, the first electrode and the second electrode being immersible in the etchant solution and positioned at opposite ends of the tank; and a plurality of support plates serially arranged between the first electrode and the second electrode and sealed to walls of the tank, wherein each of the plurality of support plates is configured to support at least one of the multiplicity of substrates, and wherein any consecutive pair of the plurality of support plates defines an isolated volume of the tank for containing a portion of the etchant solution. The plurality of support plates may be susceptors configured for holding the multiplicity of substrates in a chemical vapor deposition tool.
摘要翻译：用于同时蚀刻多个基板的阳极蚀刻系统包括：用于在其中容纳蚀刻剂溶液的蚀刻槽; 连接在第一电极和第二电极之间的电源，所述第一电极和所述第二电极浸入所述蚀刻液中并位于所述槽的相对端; 以及多个支撑板，其串联地布置在所述第一电极和所述第二电极之间并且密封到所述罐的壁，其中所述多个支撑板中的每一个被配置为支撑所述多个基板中的至少一个，并且其中，所述多个支撑板限定了用于容纳蚀刻剂溶液的一部分的罐的隔离体积。多个支撑板可以是构造成用于将多个基板保持在化学气相沉积工具中的基座。

10. 发明授权

US08609451B2 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells 有权
标题翻译：在单晶硅太阳能电池中前后结合的外延沉积
公开(公告)号：US08609451B2
公开(公告)日：2013-12-17
申请号：US13424287
申请日：2012-03-19
申请人： Tirunelveli S. Ravi , Ashish Asthana
发明人： Tirunelveli S. Ravi , Ashish Asthana
IPC分类号： H01L21/00
CPC分类号： H01L31/022433 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02579 , H01L21/02664 , H01L31/022441 , H01L31/02366 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process.
摘要翻译：具有外延沉积非常高掺杂的p型硅背表面场的单晶硅太阳能电池的制造消除了对传统的铝丝网印刷步骤的需要，因此由于在电池中没有铝诱导的弓形，因此能够实现更薄的硅太阳能电池。此外，具有内插外延p-n结形成和非常高掺杂的n型硅前表面场的单晶硅太阳能电池的制造完全避免了常规掺杂剂扩散步骤和一个丝网印刷步骤，从而实现了更便宜的制造工艺。

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