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1. 发明授权

US12064522B2 Low temperature process for preparing silicon oxide coated pharmaceuticals 有权
公开(公告)号：US12064522B2
公开(公告)日：2024-08-20
申请号：US17492363
申请日：2021-10-01
申请人： Applied Materials, Inc.
发明人： Fei Wang , Miaojun Wang , Colin C. Neikirk , Jonathan Frankel , Pravin K. Narwankar
IPC分类号： A61K9/50
CPC分类号： A61K9/5089 , A61K9/501
摘要： A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more silicon oxide materials is provided. The method entails alternating exposing the particles to gaseous or vaporous SiCl4 and gaseous or vaporous H2O at a reduced temperature and in the absence of a catalyst.

2. 发明公开

US20230355536A1 OZONE-BASED LOW TEMPERATURE SILICON OXIDE COATING FOR PHARMACEUTICAL APPLICATIONS 审中-公开
公开(公告)号：US20230355536A1
公开(公告)日：2023-11-09
申请号：US18199625
申请日：2023-05-19
申请人： Applied Materials, Inc.
发明人： Fei Wang , Geetika Bajaj , Pravin K. Narwankar
IPC分类号： A61K9/50
CPC分类号： A61K9/5089 , A61K9/501
摘要： This disclosure pertains to coated drug compositions and methods of preparing coated drug compositions with a low temperature o-zone based silicon oxide coating. Specifically, the instant application discloses a method to coat active pharmaceutical ingredient particles using a silicon precursor and ozone at a low temperature.

3. 发明申请

US20220105048A1 Low Temperature Process For Preparing Silicon Oxide Coated Pharmaceuticals 有权
公开(公告)号：US20220105048A1
公开(公告)日：2022-04-07
申请号：US17492363
申请日：2021-10-01
申请人： Applied Materials, Inc.
发明人： Fei Wang , Miaojun Wang , Colin C. Neikirk , Jonathan Frankel , Pravin K. Narwankar
IPC分类号： A61K9/50
摘要： A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more silicon oxide materials is provided. The method entails alternating exposing the particles to gaseous or vaporous SiCl4 and gaseous or vaporous H2O at a reduced temperature and in the absence of a catalyst.

4. 发明申请

US20210351035A1 Selective Deposition Of Silicon Using Deposition-Treat-Etch Process 有权
公开(公告)号：US20210351035A1
公开(公告)日：2021-11-11
申请号：US17379508
申请日：2021-07-19
申请人： Applied Materials, Inc.
发明人： Rui Cheng , Fei Wang , Abhijit Basu Mallick , Robert Jan Visser
IPC分类号： H01L21/02 , A61K9/00 , A61K31/438 , A61K31/4409 , A61K31/47 , A61K31/497 , A61K47/12 , A61K47/26 , A61K47/36 , H01L21/3065
摘要： Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

5. 发明授权

US10497573B2 Selective atomic layer etching of semiconductor materials 有权
公开(公告)号：US10497573B2
公开(公告)日：2019-12-03
申请号：US15920146
申请日：2018-03-13
申请人： Applied Materials, Inc.
发明人： Prerna Sonthalia Goradia , Fei Wang , Geetika Bajaj , Nitin Ingle , Zihui Li , Robert Jan Visser , Nitin Deepak
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/308 , H01J37/32 , H01L21/02
CPC分类号： H01L21/3065 , H01J37/3244 , H01J37/32357 , H01J37/32422 , H01L21/3086 , H01L21/67069 , H01J2237/332 , H01J2237/334 , H01L21/02205 , H01L21/67167
摘要： Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.

6. 发明申请

US20190287808A1 SELECTIVE ATOMIC LAYER ETCHING OF SEMICONDUCTOR MATERIALS 审中-公开
公开(公告)号：US20190287808A1
公开(公告)日：2019-09-19
申请号：US15920146
申请日：2018-03-13
申请人： Applied Materials, Inc.
发明人： Prerna Sonthalia Goradia , Fei Wang , Geetika Bajaj , Nitin Ingle , Zihui Li , Robert Jan Visser , Nitin Deepak
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/308 , H01J37/32
摘要： Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.

7. 发明申请

US20170148642A1 SELF-ALIGNED SHIELDING OF SILICON OXIDE 有权
公开(公告)号：US20170148642A1
公开(公告)日：2017-05-25
申请号：US15337781
申请日：2016-10-28
申请人： APPLIED MATERIALS, INC.
发明人： Fei Wang , Mikhail Korolik , Nitin K. Ingle , Anchuan Wang , Robert Jan Visser
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31144 , C09D183/08 , H01J37/3244 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/0337 , H01L21/3105 , H01L21/31116
摘要： Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

8. 发明申请

US20160307771A1 GAS-PHASE SILICON NITRIDE SELECTIVE ETCH 有权
标题翻译：气相氮化硅选择性蚀刻
公开(公告)号：US20160307771A1
公开(公告)日：2016-10-20
申请号：US14690165
申请日：2015-04-17
申请人： Applied Materials, Inc.
发明人： Jingjing Xu , Fei Wang , Anchuan Wang , Nitin K. Ingle , Robert Jan Visser
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.
摘要翻译：描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

9. 发明申请

US20230097519A1 LOW TEMPERATURE SILICON OXIDE COATING FOR PHARMACEUTICAL APPLICATIONS 有权
公开(公告)号：US20230097519A1
公开(公告)日：2023-03-30
申请号：US17955431
申请日：2022-09-28
申请人： Applied Materials, Inc.
发明人： Fei Wang , Pravin K. Narwankar
IPC分类号： A61K9/50
摘要： This disclosure pertains to coated drug compositions and methods of preparing coated drug compositions with a low temperature silicon oxide coating. Specifically, the instant application discloses a method to coat active pharmaceutical ingredient particles using a silicon precursor and a catalyst at a low temperature.

10. 发明授权

US11081348B2 Selective deposition of silicon using deposition-treat-etch process 有权
公开(公告)号：US11081348B2
公开(公告)日：2021-08-03
申请号：US16001251
申请日：2018-06-06
申请人： Applied Materials, Inc.
发明人： Rui Cheng , Fei Wang , Abhijit Basu Mallick , Robert Jan Visser
IPC分类号： H01L21/02 , A61K9/00 , A61K31/438 , A61K31/4409 , A61K31/47 , A61K31/497 , A61K47/12 , A61K47/26 , A61K47/36 , H01L21/3065
摘要： Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

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