基本信息:
- 专利标题： Selective Deposition Of Silicon Using Deposition-Treat-Etch Process
- 申请号：US17379508 申请日：2021-07-19
- 公开(公告)号：US20210351035A1 公开(公告)日：2021-11-11
- 发明人： Rui Cheng , Fei Wang , Abhijit Basu Mallick , Robert Jan Visser
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; A61K9/00 ; A61K31/438 ; A61K31/4409 ; A61K31/47 ; A61K31/497 ; A61K47/12 ; A61K47/26 ; A61K47/36 ; H01L21/3065
摘要：
Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |