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1. 发明申请

US20040200498A1 Method and apparatus for cleaning a substrate processing chamber 审中-公开
标题翻译：清洗基板处理室的方法和装置
公开(公告)号：US20040200498A1
公开(公告)日：2004-10-14
申请号：US10410042
申请日：2003-04-08
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Hui Chen , Lucy Zhiping Chen , Li Xu , Anbei Jiang , Hong Shih , Steve Mak
IPC分类号： C25F001/00
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , H01J37/321 , H01J37/32935
摘要： A method of cleaning process residues formed on surfaces in a chamber during processing of a substrate in the chamber includes first and second steps. In a first cleaning step, a first energized cleaning gas having a first chlorine-containing gas and oxygen is provided in the chamber and then exhausted. In a second cleaning step, a second energized cleaning gas having a second chlorine-containing gas and oxygen is provided in the chamber and then exhausted.
摘要翻译：在腔室中的基底处理期间清洁在室中的表面上形成的处理残留物的方法包括第一和第二步骤。在第一清洗步骤中，在室内设置具有第一含氯气体和氧气的第一带电清洁气体，然后排出。在第二清洗步骤中，在室中设置具有第二含氯气体和氧气的第二带电清洁气体，然后排出。

2. 发明申请

US20040074869A1 Fluorine free integrated process for etching aluminum including chamber dry clean 失效
标题翻译：无氟一体化蚀刻铝工艺，包括干燥室
公开(公告)号：US20040074869A1
公开(公告)日：2004-04-22
申请号：US10273580
申请日：2002-10-18
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Hui Chen , Anbei Jiang , Hong Shih , Steve S. Y. Mak
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68
CPC分类号： C23F4/00 , H01J2237/334 , H01J2237/335 , H01L21/31138 , H01L21/32136 , H01L21/32139 , Y10S438/905
摘要： A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.
摘要翻译：一种用于等离子体蚀刻铝线的无氟集成方法，其集成电路结构包括上覆抗反射涂层（ARC）和铝下方的介电层，该方法优选在单个等离子体反应器中进行。 ARC打开使用BCl3 / Cl2或Cl2和可能的烃钝化气体，优选C2H4。铝主蚀刻优选包括用He稀释的BCl3 / Cl2蚀刻和C2H4。稀释液对于C2H4的小流量特别有效。对Ti / TiN阻挡层进行过度蚀刻并且部分地进入下面的电介质可以使用类似于主蚀刻的化学。可以执行Cl 2 / O 2室清洁，优选地，从晶片从腔室中移除并且在每个晶圆循环之后。

3. 发明申请

US20020117472A1 Cleaning of multicompositional etchant residues 失效
标题翻译：清洗多组分蚀刻剂残留物
公开(公告)号：US20020117472A1
公开(公告)日：2002-08-29
申请号：US09792444
申请日：2001-02-23
申请人： Applied Materials, Inc.
发明人： Zhi-Wen Sun , Anbei Jiang , Tuo-Chuan Huang
IPC分类号： H01L021/3065 , C23F001/00
CPC分类号： H01L21/02046 , H01J37/321 , H01J37/32449 , H01J37/32935
摘要： A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.
摘要翻译：基板处理装置具有具有基板输送的基板输送基板到室内的基板支撑体上的气室，在该室内提供气体的气体供给器，对该气体进行通电的气体增压器以及排出气体的排气。控制器操作衬底支撑件，气体供应器，气体激发器和气体排出中的一个或多个，以在腔室中设置蚀刻工艺条件以蚀刻多个衬底，由此在腔室中的表面上沉积蚀刻剂残留物。控制器还操作一个或多个衬底支撑件，气体供应器，气体激励器和气体排出器，以设置腔室中的清洁工艺条件以清洁蚀刻剂残留物。清洗过程条件包括O2至CF4的体积流量比为约1:1至约1:40。

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