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    • 1. 发明授权
    • Device for correcting a digital estimate of an electric signal
    • 用于校正电信号的数字估计的装置
    • US07062159B1
    • 2006-06-13
    • US11005707
    • 2004-12-07
    • Antonio BorrelloStefano SagginiAldo NovelliIgnazio Bellomo
    • Antonio BorrelloStefano SagginiAldo NovelliIgnazio Bellomo
    • H02P7/06
    • H02P8/12
    • A device for correcting a digital estimate of an electric signal is described. The device includes a comparator that generates a current proportional to the difference between an analog estimate signal, which derives from the digital estimate, and the electric signal. The device also includes a capacitor positioned to be charged by the current, a transistor that discharges the capacitor, and a comparator that compares the voltage at the terminal of the capacitor with a reference voltage. The device also includes a controller that drives the transistor in response to the output signal of the comparator and a logic device that generates a correction digital signal to be added to or subtracted from the digital estimate of the electric signal in correspondence of an ascending or descending waveform of the electric signal.
    • 描述用于校正电信号的数字估计的装置。 该装置包括一个比较器,该比较器产生与从数字估计导出的模拟估计信号和电信号之间的差成比例的电流。 该器件还包括一个定位为由电流充电的电容器,一个对电容器进行放电的晶体管,以及将电容器端子处的电压与参考电压进行比较的比较器。 该装置还包括响应于比较器的输出信号驱动晶体管的控制器,以及逻辑器件,该逻辑器件产生校正数字信号,该校正数字信号将相应于上升或下降对电信号的数字估计加或减 电信号的波形。
    • 4. 发明申请
    • DEVICE FOR CORRECTING A DIGITAL ESTIMATE OF AN ELECTRIC SIGNAL
    • 用于校正电信号数字估计的装置
    • US20060120699A1
    • 2006-06-08
    • US11005707
    • 2004-12-07
    • Antonio BorrelloStefano SagginiAldo NovelliIgnazio Bellomo
    • Antonio BorrelloStefano SagginiAldo NovelliIgnazio Bellomo
    • H02P5/06
    • H02P8/12
    • A device for correcting a digital estimate of an electric signal is described. The device includes a comparator that generates a current proportional to the difference between an analog estimate signal, which derives from the digital estimate, and the electric signal. The device also includes a capacitor positioned to be charged by the current, a transistor that discharges the capacitor, and a comparator that compares the voltage at the terminal of the capacitor with a reference voltage. The device also includes a controller that drives the transistor in response to the output signal of the comparator and a logic device that generates a correction digital signal to be added to or subtracted from the digital estimate of the electric signal in correspondence of an ascending or descending waveform of the electric signal.
    • 描述用于校正电信号的数字估计的装置。 该装置包括一个比较器,该比较器产生与从数字估计导出的模拟估计信号和电信号之间的差成比例的电流。 该器件还包括一个定位为由电流充电的电容器,一个对电容器进行放电的晶体管,以及将电容器端子处的电压与参考电压进行比较的比较器。 该装置还包括响应于比较器的输出信号驱动晶体管的控制器,以及逻辑器件,该逻辑器件产生校正数字信号,该校正数字信号将相应于上升或下降对电信号的数字估计加或减 电信号的波形。
    • 5. 发明授权
    • Method and a circuit architecture for testing an integrated circuit comprising a programmable, non-volatile memory
    • 用于测试包括可编程的非易失性存储器的集成电路的方法和电路架构
    • US06381185B2
    • 2002-04-30
    • US09782969
    • 2001-02-14
    • Alessandro CameraPaolo SandriIgnazio BellomoAlbino Pidutti
    • Alessandro CameraPaolo SandriIgnazio BellomoAlbino Pidutti
    • G11C700
    • G11C29/50004G06F2201/81G11C16/04G11C29/50
    • A method for testing a programmable, nonvolatile memory including a matrix of memory cells is provided. A plurality of memory cells are programmed. The programmed memory cells are addressed in succession to identify a lowest of threshold voltage levels. The addressing for each memory location includes applying a selection voltage that is lower than the lowest threshold voltage level corresponding to a memory location currently being addressed. The bits are read from the programmed memory cells for the memory location currently being addressed. The reading is repeated while progressively changing the selection voltage supplied to the word line corresponding to the memory location currently being addressed until it is detected that at least one of the bits of the memory location currently being addressed has switched from a first logic level corresponding to a reading of a programmed memory cell to a second logic level corresponding to a reading of a non-programmed memory cell. The low threshold voltage level is compared in the memory location currently being addressed as determined in the reading with a stored value corresponding to the lowest of the low threshold voltages of the memory locations previously addressed.
    • 提供了一种用于测试包括存储器单元矩阵的可编程非易失性存储器的方法。 多个存储单元被编程。 编程的存储器单元被连续寻址以识别阈值电压电平的最低值。 每个存储器位置的寻址包括施加低于对应于当前被寻址的存储器位置的最低阈值电压电平的选择电压。 这些位从当前正在寻址的存储器位置的已编程存储单元读取。 重复读取,同时逐渐改变提供给对应于当前正被寻址的存储器位置的字线的选择电压,直到检测到当前被寻址的存储器位置中的至少一个位已经从对应于 将编程的存储器单元读取到对应于非编程存储器单元的读取的第二逻辑电平。 在当前正在寻址的存储器位置中,在读取中确定的低阈值电压电平与对应于先前寻址的存储器位置的最低阈值电压的存储值进行比较。