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    • 2. 发明授权
    • Method for functionalising fluid lines contained in a micromechanical device, micromechanical device including functionalised lines, and method for manufacturing same
    • 包含在微机械装置中的流体线的功能化方法,包括功能化线的微机械装置及其制造方法
    • US08968673B2
    • 2015-03-03
    • US13805491
    • 2011-06-29
    • Vincent AgacheAntoine HoangFrançoise Vinet
    • Vincent AgacheAntoine HoangFrançoise Vinet
    • G01N33/00G03F7/24B81C1/00F04B19/00
    • G03F7/24B81B2201/0214B81B2201/058B81B2201/06B81C1/00206B81C2201/0154F04B19/006
    • The present invention relates to a method for functionalizing fluid lines (1b) in a micromechanical device, the walls of which include an opaque layer. For this purpose, the invention provides a method for functionalizing a micromechanical device provided with a fluid line including a peripheral wall (5) having a surface (2) outside the line and an inner surface (3) defining a space (1b) in which a fluid can circulate, the peripheral wall at least partially including a silicon layer (5a). The method includes the following steps: a) providing a device, the peripheral wall (5) of which at least partially includes a silicon layer (5a) having, at least locally, a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm; c) silanizing at least the inner surface of the fluid line; d) the localized, selective photo-deprotection on at least the inner surface of the silanized device by exposing the peripheral wall (5) at the point at which said wall has a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm.
    • 本发明涉及一种在微机械装置中功能化流体管线(1b)的方法,该方法的壁包括不透明层。 为此,本发明提供了一种功能化微机械装置的方法,该微机械装置具有流体管线,该流体管线包括在管线外部具有表面(2)的周壁(5)和限定空间(1b)的内表面(3) 流体可以循环,周壁至少部分地包括硅层(5a)。 该方法包括以下步骤:a)提供一种器件,其外围壁(5)至少部分地包括硅层(5a),该硅层至少局部地具有大于100nm的厚度(e)并且小于 200nm,有利地为160〜180nm; c)至少使流体管线的内表面硅烷化; d)通过在所述壁的厚度(e)大于100nm且小于200nm的点处暴露外围壁(5),至少在硅烷化装置的内表面上进行局部选择性光 - 去保护 ,有利地为160至180nm。
    • 3. 发明授权
    • Device for enhancing broad band fluorescence with low loss and biological or chemical optic sensor using the same
    • 用于增加具有低损耗的宽带荧光和使用其的生物或化学光学传感器的装置
    • US07718422B2
    • 2010-05-18
    • US10450100
    • 2001-12-12
    • Patrick ChatonFrançoise VinetPierre BarritaultStéphane Getin
    • Patrick ChatonFrançoise VinetPierre BarritaultStéphane Getin
    • G01N33/551
    • G01N21/6428G01N21/6458Y10S435/808
    • The invention concerns a device for enhancing fluorescence comprising a support (10) carrying fluorescence enhancement means (11), the fluorescence enhancement means offering a reception surface for chemical or biological elements intended to be read by detection of a fluorescence signal emitted by a fluorophore, associated with the chemical or biological elements, under the effect of an excitation light beam. The fluorescence enhancement means (11) is made up of a thin, transparent, dielectric layer or a stack of thin, transparent, dielectric layers (12 to 16) ensuring a mirror function for the fluorescence signal and excitation light beam, the material of the thin layer or of each thin layer of the stack being chosen from among the following materials: TiO2, Ta2O5, HfO2, ZrO2, MgO, SiO2, Si3N4, MgF2 and YF3. The fluorescence enhancement device may be used for a biological or chemical optic sensor.
    • 本发明涉及一种用于增强荧光的装置,其包括载有荧光增强装置(11)的载体(10),所述荧光增强装置提供用于通过检测由荧光团发射的荧光信号而被读取的化学或生物元件的接收表面, 在激发光束的作用下与化学或生物元素相关联。 荧光增强装置(11)由薄的,透明的介电层或薄的,透明的电介质层(12至16)组成,确保了荧光信号和激发光束的反射镜功能, 薄层或每层薄层选自以下材料:TiO 2,Ta 2 O 5,HfO 2,ZrO 2,MgO,SiO 2,Si 3 N 4,MgF 2和YF 3。 荧光增强装置可用于生物或化学光学传感器。
    • 10. 发明授权
    • Etching an organic material layer, particularly for producing interconnections of the damascene type
    • 蚀刻有机材料层,特别是用于生产镶嵌型的互连
    • US06551930B1
    • 2003-04-22
    • US09589509
    • 2000-06-07
    • Françoise VinetYves Morand
    • Françoise VinetYves Morand
    • H01L21302
    • H01L21/31144H01L21/31127H01L21/7681H01L21/76811
    • A method for etching an organic dielectric material layer includes depositing an inorganic barrier layer on the organic dielectric material layer, and depositing an inorganic masking layer on the inorganic barrier layer. A masking resin layer is deposited on the inorganic masking layer. The method further includes patterning the masking resin layer and etching through the inorganic masking layer to expose the inorganic barrier layer. Remaining portions of the masking resin layer are removed, and the exposed inorganic barrier layer is etched to expose the organic dielectric material layer. The method further includes removing remaining portions of the inorganic masking layer, and etching the exposed organic dielectric material layer while using the inorganic barrier layer as a mask.
    • 蚀刻有机介电材料层的方法包括在有机介电材料层上沉积无机阻挡层,并在无机阻挡层上沉积无机掩模层。 掩蔽树脂层沉积在无机掩模层上。 该方法还包括图案化掩模树脂层和蚀刻通过无机掩模层以露出无机阻挡层。 去除掩模树脂层的剩余部分,并且暴露的无机阻挡层被蚀刻以暴露有机介电材料层。 该方法还包括去除无机掩模层的剩余部分,并且在使用无机阻挡层作为掩模的同时蚀刻暴露的有机介电材料层。