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    • 1. 发明授权
    • Body contact structures and methods of manufacturing the same
    • 身体接触结构及其制造方法
    • US08053325B1
    • 2011-11-08
    • US12782320
    • 2010-05-18
    • Anthony ChouArvind KumarShreesh Narasimha
    • Anthony ChouArvind KumarShreesh Narasimha
    • H01L21/336
    • H01L29/78615H01L29/66772
    • A body contact structure which reduce parasitic capacitance and improves body resistance of a device and methods of manufacture. The method includes forming a gate insulator material and gate electrode material on a substrate. The method further includes patterning the gate insulator material and the gate electrode material to form a gate structure having a shape with a first portion isolated from a second portion. The method further includes forming source and drain regions on sides of the first portion and a body contact at a side and under an area of the second portion, and forming an interlevel dielectric within a space that isolates the first portion from the second portion of the gate structure, and over the gate structure, source and drain regions and the body contact.
    • 减少寄生电容并改善器件的体电阻和制造方法的体接触结构。 该方法包括在基板上形成栅极绝缘体材料和栅电极材料。 该方法还包括图案化栅极绝缘体材料和栅电极材料以形成具有与第二部分隔离的第一部分的形状的栅极结构。 该方法还包括在第一部分的侧面上形成源极和漏极区域,在第二部分的侧面和下面区域形成体接触,以及在隔离第一部分与第二部分的第二部分的空间内形成层间电介质 栅极结构,以及栅极结构,源极和漏极区域以及身体接触。
    • 8. 发明申请
    • Nitridation of STI Fill Oxide to Prevent the Loss of STI Fill Oxide During Manufacturing Process
    • 氮化硅填充氧化物,以防止在制造过程中STI填充氧化物的损失
    • US20080090379A1
    • 2008-04-17
    • US11955751
    • 2007-12-13
    • Fred BuehrerAnthony ChouToshiharu FurukawaRenee Mo
    • Fred BuehrerAnthony ChouToshiharu FurukawaRenee Mo
    • H01L21/76
    • H01L21/76232H01L21/76224H01L21/823481
    • A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.
    • 一种用于半导体器件的改进的浅沟槽隔离(STI)结构的方法和结构。 STI结构包含STI填充物的氮氧化物顶层。 可选地,STI结构包括邻近硅沟槽壁的STI填充的氮氧化物边缘。 在硅沟槽壁的上边缘附近的氮氧化物边缘的区域包括与氮氧化物边缘的其它区域相比相对较厚并且含有较高浓度的氮的氧氮化物角。 氮氧化物的特征是限制了STI填充高度损失,并且还减少了STI填充物中由于氢氟酸蚀刻和其它制造工艺引起的硅衬底的形成。 限制STI填充高度损失和形成纹理改善了STI结构的功能。 形成STI结构的方法与包括化学机械抛光(CMP)在内的标准半导体器件制造工艺特别兼容,因为该方法包括使用纯二氧化硅STI填充和等离子体和热氮化工艺来形成氧氮化物顶层 和氮氧化物边缘,包括氮氧化物拐角,STI填充。