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1. 发明申请

US20120122381A1 Silicate Composite Polishing Pad 有权
标题翻译：硅酸盐复合抛光垫
公开(公告)号：US20120122381A1
公开(公告)日：2012-05-17
申请号：US12945557
申请日：2010-11-12
申请人： Andrew R. Wank , Donna M. Alden , Joseph K. So , Robert Gargione , Mark E. Gazze , David Drop , Colin E. Cameron, JR. , Mai Tieu Banh , Shawn Riley
发明人： Andrew R. Wank , Donna M. Alden , Joseph K. So , Robert Gargione , Mark E. Gazze , David Drop , Colin E. Cameron, JR. , Mai Tieu Banh , Shawn Riley
IPC分类号： B24D11/00
CPC分类号： B24B37/24
摘要： The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. It includes a polymeric matrix having a polishing surface. Polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. Silicate-containing regions distributed within each of the polymeric microelements coat less than 50 percent of the outer surface of the polymeric microelements. Less than 0.1 weight percent total of the polymeric microelements are associated with i) silicate particles having a particle size of greater than 5 μm; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 μm.
摘要翻译：本发明提供了一种用于抛光半导体，磁性和光学衬底中的至少一种的抛光垫。它包括具有抛光表面的聚合物基质。聚合物微量元素分布在聚合物基体内和聚合物基质的抛光表面。分布在每个聚合微量元素内的含硅酸盐的区域涂覆小于聚合物微量元素的外表面的50％。低于0.1重量％的聚合物微量元素与i）具有大于5μm的粒度的硅酸盐颗粒相关联; ii）覆盖聚合物微量元素的外表面的大于50％的含硅酸盐区域; 和iii）用硅酸盐颗粒聚集到大于120μm的平均簇尺寸的聚合物微量元素。

2. 发明授权

US08257152B2 Silicate composite polishing pad 有权
标题翻译：硅酸复合抛光垫
公开(公告)号：US08257152B2
公开(公告)日：2012-09-04
申请号：US12945557
申请日：2010-11-12
申请人： Andrew R. Wank , Donna M. Alden , Joseph K. So , Robert Gargione , Mark E. Gazze , David Drop , Colin F. Cameron, Jr. , Mai Tieu Banh , Shawn Riley
发明人： Andrew R. Wank , Donna M. Alden , Joseph K. So , Robert Gargione , Mark E. Gazze , David Drop , Colin F. Cameron, Jr. , Mai Tieu Banh , Shawn Riley
IPC分类号： B24D11/00
CPC分类号： B24B37/24
摘要： The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. It includes a polymeric matrix having a polishing surface. Polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. Silicate-containing regions distributed within each of the polymeric microelements coat less than 50 percent of the outer surface of the polymeric microelements. Less than 0.1 weight percent total of the polymeric microelements are associated with i) silicate particles having a particle size of greater than 5 μm; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 μm.
摘要翻译：本发明提供了一种用于抛光半导体，磁性和光学衬底中的至少一种的抛光垫。它包括具有抛光表面的聚合物基质。聚合物微量元素分布在聚合物基体内和聚合物基质的抛光表面。分布在每个聚合微量元素内的含硅酸盐的区域涂覆小于聚合物微量元素的外表面的50％。低于0.1重量％的聚合物微量元素与i）具有大于5μm的粒度的硅酸盐颗粒相关联; ii）覆盖聚合物微量元素的外表面的大于50％的含硅酸盐区域; 和iii）用硅酸盐颗粒聚集到大于120μm的平均簇尺寸的聚合物微量元素。

3. 发明申请

US20120117888A1 Hollow Polymeric-Silicate Composite 有权
标题翻译：中空聚合硅酸盐复合材料
公开(公告)号：US20120117888A1
公开(公告)日：2012-05-17
申请号：US12945587
申请日：2010-11-12
申请人： Andrew R. Wank , Donna M. Alden , Mark E. Gazze , Robert Gargione , Joseph K. So , David Drop , Mai Tieu Banh , Shawn Riley
发明人： Andrew R. Wank , Donna M. Alden , Mark E. Gazze , Robert Gargione , Joseph K. So , David Drop , Mai Tieu Banh , Shawn Riley
IPC分类号： B24D3/00 , C09K3/14
CPC分类号： B24B37/24 , Y10T428/24405 , Y10T428/249954
摘要： The invention provides a plurality of polymeric particles embedded with silicate that include gas-filled polymeric microelements. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell having an outer surface and a diameter of 5 μm to 200 μm with silicate particles embedded in the polymer. The silicate particles have an average particle size of 0.01 to 3 μm. The silicate-containing regions are spaced to coat less than 50 percent of the outer surface of the polymeric microelements; and less than 0.1 weight percent total of the polymeric microelements is associated with i) silicate particles having a particle size of greater than 5 μm; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric micro elements agglomerated with silicate particles to an average cluster size of greater than 120 μm.
摘要翻译：本发明提供了包含硅酸盐的多个聚合物颗粒，其包括气体填充的聚合物微量元素。气体填充的聚合物微量元素具有壳，密度为5g / l至200g / l。壳体具有外表面，直径为5μm至200μm，硅酸盐颗粒嵌入聚合物中。硅酸盐颗粒的平均粒径为0.01〜3μm。含硅酸盐的区域间隔开以涂覆低于聚合物微量元素外表面的50％; 并且少于0.1重量％的聚合物微量元素与i）具有大于5μm的粒度的硅酸盐颗粒相关联; ii）覆盖聚合物微量元素的外表面的大于50％的含硅酸盐区域; 和iii）用硅酸盐颗粒凝聚成大于120μm的平均簇尺寸的聚合物微量元素。

4. 发明授权

US08357446B2 Hollow polymeric-silicate composite 有权
标题翻译：中空聚硅酸盐复合材料
公开(公告)号：US08357446B2
公开(公告)日：2013-01-22
申请号：US12945587
申请日：2010-11-12
申请人： Andrew R. Wank , Donna M. Alden , Mark E. Gazze , Robert Gargione , Joseph K. So , David Drop , Mai Tieu Banh , Shawn Riley
发明人： Andrew R. Wank , Donna M. Alden , Mark E. Gazze , Robert Gargione , Joseph K. So , David Drop , Mai Tieu Banh , Shawn Riley
IPC分类号： D06N7/04 , B32B3/26 , B24D18/00 , B24D3/02 , C09C1/68
CPC分类号： B24B37/24 , Y10T428/24405 , Y10T428/249954
摘要： The invention provides a plurality of polymeric particles embedded with silicate that include gas-filled polymeric microelements. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell having an outer surface and a diameter of 5 μm to 200 μm with silicate particles embedded in the polymer. The silicate particles have an average particle size of 0.01 to 3 μm. The silicate-containing regions are spaced to coat less than 50 percent of the outer surface of the polymeric microelements; and less than 0.1 weight percent total of the polymeric microelements is associated with i) silicate particles having a particle size of greater than 5 μm; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric micro elements agglomerated with silicate particles to an average cluster size of greater than 120 μm.
摘要翻译：本发明提供了包含硅酸盐的多个聚合物颗粒，其包括气体填充的聚合物微量元素。气体填充的聚合物微量元素具有壳，密度为5g / l至200g / l。壳体具有外表面，直径为5μm至200μm，硅酸盐颗粒嵌入聚合物中。硅酸盐颗粒的平均粒径为0.01〜3μm。含硅酸盐的区域间隔开以涂覆低于聚合物微量元素外表面的50％; 并且少于0.1重量％的聚合物微量元素与i）具有大于5μm的粒度的硅酸盐颗粒相关联; ii）覆盖聚合物微量元素的外表面的大于50％的含硅酸盐区域; 和iii）用硅酸盐颗粒凝聚成大于120μm的平均簇尺寸的聚合物微量元素。

5. 发明授权

US08202334B2 Method of forming silicate polishing pad 有权
标题翻译：形成硅酸盐抛光垫的方法
公开(公告)号：US08202334B2
公开(公告)日：2012-06-19
申请号：US12945504
申请日：2010-11-12
申请人： Donna M. Alden , Andrew R. Wank , Robert Gargione , Mark E. Gazze , Joseph K. So , David Drop , Shawn Riley , Mai Tieu Banh
发明人： Donna M. Alden , Andrew R. Wank , Robert Gargione , Mark E. Gazze , Joseph K. So , David Drop , Shawn Riley , Mai Tieu Banh
IPC分类号： B24D3/00 , B24D11/00 , B24D7/19 , B24D7/30 , B24D1/00 , B28D11/18
CPC分类号： B24B37/24
摘要： The method provides a method of preparing a silicate-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet. The polymeric microelements have varied densities, varied wall thickness and varied particle size. Passing the gas-filled microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separates the polymeric microelements with Coanda effect, inertia and gas flow resistance. The coarse polymeric microelements from the curved wall of the Coanda block to clean the polymeric microelements. The polymeric microelements collected contain less than 0.1 weight percent total of the polymeric microelements being associated with i) silicate particles having a particle size of greater than 5 μm; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 μm. Inserting the cleaned polymeric microelements into a polymeric matrix forms the polishing pad.
摘要翻译：该方法提供一种制备用于抛光半导体，磁性和光学基底中的至少一种的含硅酸盐的抛光垫的方法。该方法包括将气体填充的聚合物微量元素的进料流引入气体射流。聚合物微量元素具有不同的密度，变化的壁厚和不同的粒度。通过在Coanda块附近的气体喷射器中充满气体的微量元件，柯恩达块具有弯曲的壁，用于将聚合物微量元素与柯达效应，惯性和气体流动阻力分开。来自柯安达块弯曲壁的粗聚合物微量元素，用于清洁聚合物微量元素。收集的聚合物微量元素含有小于0.1重量％的聚合物微量元素，其与i）具有大于5μm的粒度的硅酸盐颗粒相关联; ii）覆盖聚合物微量元素的外表面的大于50％的含硅酸盐区域; 和iii）用硅酸盐颗粒聚集到大于120μm的平均簇尺寸的聚合物微量元素。将清洁的聚合物微量元件插入聚合物基质中形成抛光垫。

6. 发明申请

US20120117889A1 METHOD OF FORMING SILICATE POLISHING PAD 有权
标题翻译：形成硅酸盐抛光垫的方法
公开(公告)号：US20120117889A1
公开(公告)日：2012-05-17
申请号：US12945504
申请日：2010-11-12
申请人： Donna M. Alden , Andrew R. Wank , Robert Gargione , Mark E. Gazze , Joseph K. So , David Drop , Shawn Riley , Mai Tieu Banh
发明人： Donna M. Alden , Andrew R. Wank , Robert Gargione , Mark E. Gazze , Joseph K. So , David Drop , Shawn Riley , Mai Tieu Banh
IPC分类号： B24D11/00
CPC分类号： B24B37/24
摘要： The method provides a method of preparing a silicate-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet. The polymeric microelements have varied densities, varied wall thickness and varied particle size. Passing the gas-filled microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separates the polymeric microelements with Coanda effect, inertia and gas flow resistance. The coarse polymeric microelements from the curved wall of the Coanda block to clean the polymeric microelements. The polymeric microelements collected contain less than 0.1 weight percent total of the polymeric microelements being associated with i) silicate particles having a particle size of greater than 5 μm; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 μm. Inserting the cleaned polymeric microelements into a polymeric matrix forms the polishing pad.
摘要翻译：该方法提供一种制备用于抛光半导体，磁性和光学基底中的至少一种的含硅酸盐的抛光垫的方法。该方法包括将气体填充的聚合物微量元素的进料流引入气体射流。聚合物微量元素具有不同的密度，变化的壁厚和不同的粒度。通过在Coanda块附近的气体喷射器中充满气体的微量元件，柯恩达块具有弯曲的壁，用于将聚合物微量元素与柯达效应，惯性和气体流动阻力分开。来自柯安达块弯曲壁的粗聚合物微量元素，用于清洁聚合物微量元素。收集的聚合物微量元素含有小于0.1重量％的聚合物微量元素，其与i）具有大于5μm的粒度的硅酸盐颗粒相关联; ii）覆盖聚合物微量元素的外表面的大于50％的含硅酸盐区域; 和iii）用硅酸盐颗粒聚集到大于120μm的平均簇尺寸的聚合物微量元素。将清洁的聚合物微量元件插入聚合物基质中形成抛光垫。

7. 发明授权

US07384871B2 Chemical mechanical polishing compositions and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US07384871B2
公开(公告)日：2008-06-10
申请号：US10882567
申请日：2004-07-01
申请人： Francis J. Kelley , John Quanci , Joseph K. So , Hongyu Wang
发明人： Francis J. Kelley , John Quanci , Joseph K. So , Hongyu Wang
IPC分类号： C09G1/02 , C09G1/04 , H01L21/304 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/04
摘要： The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.
摘要翻译：本发明提供了一种水性组合物，其用于在半导体晶片上抛光有色金属互连物，其包含氧化剂，有色金属抑制剂，有色金属络合剂，改性纤维素，丙烯酸和甲基丙烯酸的0.01〜5重量％共聚物，和平衡水，其中丙烯酸和甲基丙烯酸的共聚物的单体比例（丙烯酸/甲基丙烯酸）在1:30至30:1的范围内，共聚物的分子量在1K至1000K的范围内。

8. 发明授权

US06893328B2 Conductive polishing pad with anode and cathode 失效
标题翻译：带阳极和阴极的导电抛光垫
公开(公告)号：US06893328B2
公开(公告)日：2005-05-17
申请号：US10421106
申请日：2003-04-23
申请人： Joseph K. So
发明人： Joseph K. So
IPC分类号： B23H5/08 , B24B37/04 , C25F7/00 , B24B1/00
CPC分类号： B24B37/24 , B23H5/08 , B24B37/046 , B24B37/20 , C25F7/00 , Y10S451/908
摘要： A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.
摘要翻译：一种导电抛光垫，其包括在抛光垫的抛光表面处或附近形成的一个或多个阳极和一个或多个阴极。阳极和阴极连接到作为电连接器系统的一部分的布线网络，其允许电流源连接到抛光垫并且即使抛光垫相对于阳极和阴极移动，也向阳极和阴极提供电流当前来源。在抛光表面和晶片的金属层之间引入的电解抛光液在阳极，阴极和金属层之间形成电路。导电抛光垫允许在常规化学机械抛光（CMP）工具上进行电化学机械抛光（ECMP）。

9. 发明授权

US07084059B2 CMP system for metal deposition 失效
公开(公告)号：US07084059B2
公开(公告)日：2006-08-01
申请号：US10347831
申请日：2003-01-21
申请人： Terence M. Thomas , Joseph K. So
发明人： Terence M. Thomas , Joseph K. So
IPC分类号： H01L21/44
CPC分类号： B24B37/0056 , B24B37/042 , H01L21/288 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.

10. 发明授权

US07387964B2 Copper polishing cleaning solution 有权
标题翻译：铜抛光清洗液
公开(公告)号：US07387964B2
公开(公告)日：2008-06-17
申请号：US10454877
申请日：2003-06-05
申请人： Joseph K. So , Terence M. Thomas
发明人： Joseph K. So , Terence M. Thomas
IPC分类号： H01L21/02 , C11D7/32
CPC分类号： C11D11/0047 , C11D3/30 , C11D3/33 , H01L21/02074 , H01L21/3212
摘要： A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine including an alcohol group. The cleaning solution also includes an amino acid complexing agent and an inhibitor. In a preferred embodiment, the cleaning solution has a basic pH.
摘要翻译：用于从抛光垫和晶片衬底的表面去除铜络合物残留物的清洁溶液包括胺pH调节剂，其可以是单齿或二齿胺化合物或四元氢氧化铵化合物或包含醇基团的胺。清洁溶液还包括氨基酸络合剂和抑制剂。在优选的实施方案中，清洁溶液具有碱性pH。

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