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1. 发明授权

US06322661B1 Method and apparatus for controlling the volume of a plasma 有权
标题翻译：用于控制等离子体体积的方法和装置
公开(公告)号：US06322661B1
公开(公告)日：2001-11-27
申请号：US09439759
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Nicolas Bright
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Nicolas Bright
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32688
摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.
摘要翻译：公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。该装置包括具有多个第一磁性元件的第一磁性桶。第一磁性元件被配置用于在处理室内产生第一磁场。该装置还包括具有多个第二磁性元件的第二磁性桶。第二磁性元件构造成用于在处理室内产生第二磁场。第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

2. 发明授权

US06302966B1 Temperature control system for plasma processing apparatus 有权
标题翻译：等离子体处理装置的温度控制系统
公开(公告)号：US06302966B1
公开(公告)日：2001-10-16
申请号：US09439675
申请日：1999-11-15
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Michael G. R. Smith , Andras Kuthi
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Michael G. R. Smith , Andras Kuthi
IPC分类号： C23C1646
CPC分类号： H01J37/32522
摘要： A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.
摘要翻译：公开了一种等离子体处理系统，其包括能够对等离子体处理装置实现非常精确的温度控制的温度管理系统和方法。在一个实施例中，温度管理系统和方法用于在半导体器件的制造期间实现与等离子体相互作用的等离子体处理装置的表面的紧密温度控制。本发明提供的严格的温度控制可以通过组合加热和冷却块实现，使得可以从相同的热界面提供加热和冷却。

3. 发明授权

US08398875B2 Method of orienting an upper electrode relative to a lower electrode for bevel edge processing 有权
标题翻译：相对于下电极定向上电极用于斜边加工的方法
公开(公告)号：US08398875B2
公开(公告)日：2013-03-19
申请号：US13047735
申请日：2011-03-14
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Methods for orienting an upper electrode relative to a lower electrode are provided. The lower electrode is configured to have a desired existing orientation in a process chamber to define active and inactive process zones in the process chamber for processing a wafer. The method includes configuring each electrode with a reference surface, where a lower electrode reference surface is in the desired existing orientation and an upper electrode reference surface to be oriented parallel to the lower electrode reference surface. Then, temporarily holding the upper electrode reference surface oriented parallel to the lower electrode reference surface, and securing the upper electrode to a drive to mount the upper electrode reference surface parallel to the lower electrode reference surface. Other method configurations are also disclosed and illustrated.
摘要翻译：提供了用于使上电极相对于下电极定向的方法。下电极被配置为在处理室中具有期望的现有取向，以在处理室中限定用于处理晶片的有源和非活性工艺区。该方法包括用参考表面配置每个电极，其中下电极参考表面处于所需的现有取向，并且上电极参考表面被平行于下电极参考表面定向。然后，暂时保持与上部电极基准面平行的上部电极基准面，并将该上部电极固定在与上述电极基准面平行的驱动器上。还公开和示出了其它方法构造。

4. 发明授权

US07922866B2 Apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer 有权
标题翻译：用于在处理室中对准电极以保护晶片边缘环境内的排除区域的装置
公开(公告)号：US07922866B2
公开(公告)日：2011-04-12
申请号：US12647301
申请日：2009-12-24
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.
摘要翻译：位置关系建立在一个过程室中。基底配置有下电极表面以支撑晶片，并且上电极具有下表面。安装在基座上的驱动器具有连接到上电极的连杆。放置在下表面上的固定器移动到下电极的期望取向。通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

5. 发明授权

US07858898B2 Bevel etcher with gap control 有权
标题翻译：斜角蚀刻机具有间隙控制
公开(公告)号：US07858898B2
公开(公告)日：2010-12-28
申请号：US11698191
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
IPC分类号： B23K10/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

6. 发明授权

US07662254B2 Methods of and apparatus for aligning electrodes in a process chamber to protect an exclusion area within an edge environ of a wafer 有权
标题翻译：用于在处理室中对准电极的方法和装置，以保护晶片边缘环境内的排除区域
公开(公告)号：US07662254B2
公开(公告)日：2010-02-16
申请号：US11704870
申请日：2007-02-08
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.
摘要翻译：位置关系建立在一个过程室中。基底配置有下电极表面以支撑晶片，并且上电极具有下表面。安装在基座上的驱动器具有连接到上电极的连杆。放置在下表面上的固定器移动到下电极的期望取向。通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

7. 发明授权

US07943007B2 Configurable bevel etcher 有权
标题翻译：可配置斜角蚀刻机
公开(公告)号：US07943007B2
公开(公告)日：2011-05-17
申请号：US11698190
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： H01L21/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

8. 发明申请

US20080182412A1 Configurable bevel etcher 有权
标题翻译：可配置斜角蚀刻机
公开(公告)号：US20080182412A1
公开(公告)日：2008-07-31
申请号：US11698190
申请日：2007-01-26
申请人： Andrew D. Bailey III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey III , Alan M. Schoepp , Gregory Sexton , Yunsang Kim , William S. Kennedy
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

9. 发明授权

US06518705B2 Method and apparatus for producing uniform process rates 有权
公开(公告)号：US06518705B2
公开(公告)日：2003-02-11
申请号：US10033807
申请日：2001-12-18
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
IPC分类号： H01J724
CPC分类号： H01J37/321 , H01J37/32467
摘要： An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

10. 发明申请

US20110165779A1 METHOD OF ORIENTING AN UPPER ELECTRODE RELATIVE TO A LOWER ELECTRODE FOR BEVEL EDGE PROCESSING 有权
标题翻译：将上电极相对于较低电极的方法进行水平边缘处理
公开(公告)号：US20110165779A1
公开(公告)日：2011-07-07
申请号：US13047735
申请日：2011-03-14
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Alan M. Schoepp , John D. Boniface
IPC分类号： H01L21/465
CPC分类号： H01L21/67069 , H01J37/32568
摘要： Methods for orienting an upper electrode relative to a lower electrode are provided. The lower electrode is configured to have a desired existing orientation in a process chamber to define active and inactive process zones in the process chamber for processing a wafer. The method includes configuring each electrode with a reference surface, where a lower electrode reference surface is in the desired existing orientation and an upper electrode reference surface to be oriented parallel to the lower electrode reference surface. Then, temporarily holding the upper electrode reference surface oriented parallel to the lower electrode reference surface, and securing the upper electrode to a drive to mount the upper electrode reference surface parallel to the lower electrode reference surface. Other method configurations are also disclosed and illustrated.
摘要翻译：提供了用于使上电极相对于下电极定向的方法。下电极被配置为在处理室中具有期望的现有取向，以在处理室中限定用于处理晶片的有源和非活性工艺区。该方法包括用参考表面配置每个电极，其中下电极参考表面处于所需的现有取向，并且上电极参考表面被平行于下电极参考表面定向。然后，暂时保持与上部电极基准面平行的上部电极基准面，并将该上部电极固定在与上述电极基准面平行的驱动器上。还公开和示出了其它方法构造。

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