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1. 发明授权

US09536711B2 Method and apparatus for DC voltage control on RF-powered electrode 有权
标题翻译： RF电源电压直流电压控制方法及装置
公开(公告)号：US09536711B2
公开(公告)日：2017-01-03
申请号：US12047820
申请日：2008-03-13
申请人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
发明人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了一种处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及负直流电源通过RF滤波器控制等离子体处理参数。

2. 发明申请

US20080237187A1 METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE 有权
标题翻译：用于诱导直流电压在电极上的方法和装置
公开(公告)号：US20080237187A1
公开(公告)日：2008-10-02
申请号：US12047813
申请日：2008-03-13
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Eric Hudson , Andreas Fischer
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065 , H05H1/24 , H01L21/30
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.
摘要翻译：公开了一种处理衬底的方法。该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。

3. 发明申请

US20110059615A1 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 有权
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：US20110059615A1
公开(公告)日：2011-03-10
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

4. 发明申请

US20080020574A1 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
标题翻译：使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法
公开(公告)号：US20080020574A1
公开(公告)日：2008-01-24
申请号：US11487999
申请日：2006-07-18
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

5. 发明授权

US08450635B2 Method and apparatus for inducing DC voltage on wafer-facing electrode 有权
标题翻译：用于在面向晶片的电极上感应直流电压的方法和装置
公开(公告)号：US08450635B2
公开(公告)日：2013-05-28
申请号：US12047813
申请日：2008-03-13
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Eric Hudson , Andreas Fischer
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Eric Hudson , Andreas Fischer
IPC分类号： B23K10/00
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.
摘要翻译：公开了一种处理衬底的方法。该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。

6. 发明授权

US07837826B2 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
标题翻译：使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法
公开(公告)号：US07837826B2
公开(公告)日：2010-11-23
申请号：US11487999
申请日：2006-07-18
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

7. 发明申请

US20080241420A1 METHOD AND APPARATUS FOR DC VOLTAGE CONTROL ON RF-POWERED ELECTRODE 有权
标题翻译： RF电源直流电压控制方法与装置
公开(公告)号：US20080241420A1
公开(公告)日：2008-10-02
申请号：US12047820
申请日：2008-03-13
申请人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
发明人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
IPC分类号： H05H1/24
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了一种处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源，以及负直流电源通过RF滤波器控制等离子体处理参数。

8. 发明授权

US08222157B2 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
标题翻译：使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法
公开(公告)号：US08222157B2
公开(公告)日：2012-07-17
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/461
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

9. 发明授权

US09251999B2 Capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate 有权
标题翻译：具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统
公开(公告)号：US09251999B2
公开(公告)日：2016-02-02
申请号：US13526391
申请日：2012-06-18
申请人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01J37/32 , H01L21/306 , G03F7/42 , H01L21/311
CPC分类号： H01J37/32174 , G03F7/427 , H01J37/32091 , H01J37/32128 , H01J37/32165 , H01J37/32532 , H01L21/306 , H01L21/31138
摘要： A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.
摘要翻译：提供了具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统。等离子体处理系统至少包括用于处理衬底的上电极和下电极，衬底在等离子体处理期间设置在下电极上。等离子体处理系统还包括用于向下电极提供至少第一RF信号的装置，第一RF信号具有第一RF频率。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。等离子体处理系统还包括用于整流感应RF信号以产生经整流的RF信号的装置，使得整流的RF信号比负偏置更积极地偏置，其中衬底被配置为在被整流的RF信号被提供给上电极。

10. 发明申请

US20130126476A1 DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES 有权
标题翻译：上电极双区温度控制
公开(公告)号：US20130126476A1
公开(公告)日：2013-05-23
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译：等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

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