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    • 5. 发明授权
    • Method and circuitry for erasing a nonvolatile semiconductor memory
incorporating row redundancy
    • 用于擦除结合行冗余的非易失性半导体存储器的方法和电路
    • US5327383A
    • 1994-07-05
    • US871485
    • 1992-04-21
    • Amit MerchantMickey L. FandrichNeal Mielke
    • Amit MerchantMickey L. FandrichNeal Mielke
    • G11C17/00G11C16/02G11C16/06G11C16/10G11C16/16G11C29/00G11C29/04G11C7/00G11C7/02
    • G11C29/82G11C16/10G11C16/16
    • Circuitry for independently controlling the erasure of a flash memory including redundant rows for replacing shorted rows within the memory array is described. An erase command fires a sequencer circuit, which schedules the controllers that execute the tasks of an erase event. By nesting the control of erase events, the sequencer circuit allows easy modification of erase events. The sequencer circuit fires a precondition controller upon receipt of an erase command. The precondition controller then manages the preconditioning of the memory array, including memory cells within shorted rows. The precondition controller does so by disabling the replacement of shorted rows with redundant rows. During preconditioning each memory cell is programmed to a logic 0, before the memory cell is erased to a logic 1, to prevent the overerasure of memory cells during subsequent erasure. Afterward, the sequencer fires the erase controller. The erase control circuit then manages erasure. The circuitry also includes a postcondition controller and a program controller.
    • 描述用于独立地控制闪存的擦除的电路,包括用于替换存储器阵列内的短路行的冗余行。 擦除命令将触发一个定序器电路,该电路对执行擦除事件任务的控制器进行调度。 通过嵌套擦除事件的控制,定序器电路允许轻松修改擦除事件。 定序器电路在接收到擦除命令时触发前提条件控制器。 前置条件控制器然后管理存储器阵列的预处理,包括短路行内的存储器单元。 前提条件控制器通过禁用用冗余行替换短路行来做到这一点。 在预处理期间,在存储单元被擦除为逻辑1之前,每个存储器单元被编程为逻辑0,以防止在后续擦除期间存储器单元的过度擦写。 之后,序列发生器触发擦除控制器。 然后擦除控制电路管理擦除。 电路还包括后置条件控制器和程序控制器。
    • 9. 发明授权
    • Method for preconditioning a nonvolatile memory array
    • 用于预处理非易失性存储器阵列的方法
    • US5537357A
    • 1996-07-16
    • US266132
    • 1994-06-27
    • Amit MerchantMickey L. FandrichGeoffrey Gould
    • Amit MerchantMickey L. FandrichGeoffrey Gould
    • G11C16/10G11C16/34G11C7/02
    • G11C16/107G11C16/10G11C16/3454G11C16/3459
    • A method of preconditioning a nonvolatile memory array including a first memory cell and a second memory cell. Preconditioning begins by applying an initial precondition pulse to all memory cells in the nonvolatile memory array without pausing to perform precondition verification. After this first step, precondition verification begins. The voltage level of the first memory cell is sensed and compared to a selected voltage level. If the threshold voltage of the first memory cell is below the selected voltage, the first memory cell did not precondition verify. In that case, another precondition pulse is then applied to the first memory cell. Application of precondition pulses and precondition verification continues until the first memory cell verifies as preconditioned. Attention turns to the second memory cell after the first memory cell precondition verifies. If the second memory cell does not precondition verify another precondition pulse is applied to the second memory cell. Application of precondition pulses and precondition verification continues until the second memory cell verifies as preconditioned.
    • 一种预处理包括第一存储单元和第二存储单元的非易失性存储器阵列的方法。 通过向非易失性存储器阵列中的所有存储器单元应用初始预条件脉冲而不停止执行前提条件验证,开始预处理。 在第一步之后,开始前提条件验证。 感测第一存储器单元的电压电平并将其与选定的电压电平进行比较。 如果第一存储单元的阈值电压低于所选择的电压,则第一存储单元未进行前提条件验证。 在这种情况下,然后将另一个前提条件脉冲施加到第一存储器单元。 预处理脉冲的应用和前提条件验证一直持续到第一个存储器单元验证为预处理。 在第一个存储单元前提条件验证之后,注意转向第二个存储单元。 如果第二存储器单元不是先决条件,则验证另一预条件脉冲被施加到第二存储器单元。 预处理脉冲的应用和前提条件验证一直持续到第二个存储单元验证为预处理。