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1. 发明授权

US06855585B1 Integrating multiple thin film resistors 有权
标题翻译：集成多个薄膜电阻
公开(公告)号：US06855585B1
公开(公告)日：2005-02-15
申请号：US10002429
申请日：2001-10-31
申请人： Alexander Kalnitsky , Joseph Paul Elull , Ralph Wall , Robert F. Scheer , Jonathan Herman , Glenn Nobinger , Viktor Zekeriya
发明人： Alexander Kalnitsky , Joseph Paul Elull , Ralph Wall , Robert F. Scheer , Jonathan Herman , Glenn Nobinger , Viktor Zekeriya
IPC分类号： H01L27/01 , H01L27/08 , H01L21/302
CPC分类号： H01L27/0802 , H01L27/016
摘要： A method for forming multiple resistors on a substrate. The method initially includes providing a first resistor on the substrate. A first dielectric layer is deposited, patterned, and selectively etched over the first resistor. Second resistor material is provided over the first dielectric layer. Furthermore, landing pad material is provided over the second resistor material. The landing pad material and the second resistor material are then selectively etched. The selective etching forms contacts for the first resistor in a first region, and forms a second resistor and associated contacts in a second region.
摘要翻译：一种在衬底上形成多个电阻器的方法。该方法最初包括在衬底上提供第一电阻器。在第一电阻器上沉积，图案化和选择性蚀刻第一电介质层。第二电阻材料设置在第一介电层上。此外，着陆垫材料设置在第二电阻材料上。然后选择性地蚀刻着陆焊盘材料和第二电阻材料。选择性蚀刻在第一区域中形成用于第一电阻器的触点，并且在第二区域中形成第二电阻器和相关联的触点。

2. 发明申请

US20070035364A1 Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices 审中-公开
标题翻译：钛 - 钨合金基镜和电极在体声波器件中的应用
公开(公告)号：US20070035364A1
公开(公告)日：2007-02-15
申请号：US11203543
申请日：2005-08-11
申请人： Uppili Sridhar , Ralph Wall , Guillaume Bouche
发明人： Uppili Sridhar , Ralph Wall , Guillaume Bouche
IPC分类号： H03H9/56
CPC分类号： H03H9/587 , H03H3/02 , H03H9/175 , H03H9/584
摘要： Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices simplify processing by eliminating the need for adhesion, barrier and seed layers, and preserve the advantages of tungsten layers. Alternate layers of high and low acoustic impedance materials are use, wherein the high acoustic impedance layers are titanium-tungsten alloy layers, preferably deposited by physical vapor deposition, and isotropically patterned with a wet etch. SiO2 is preferably used for the low acoustic impedance layers, though other low acoustic impedance materials may be used if desired. Electrodes and loads may also be a Titanium-tungsten alloy. Titanium-tungsten alloys in the range of 3 to 15 percent of titanium by weight are preferred.
摘要翻译：体积波形器件中的钛 - 钨合金镜和电极通过消除对粘合，阻挡层和种子层的需要，并且保留了钨层的优点，从而简化了加工过程。使用高和低声阻抗材料的交替层，其中高声阻抗层是钛 - 钨合金层，优选通过物理气相沉积沉积，并用湿蚀刻各向同性地图案化。优选地，低SiO 2 SiO 2用于低声阻抗层，尽管如果需要可以使用其它低声阻抗材料。电极和负载也可以是钛 - 钨合金。优选钛 - 钨合金的重量比为3〜15％的钛 - 钨合金。

3. 发明申请

US20050030632A1 Metal trim mirror for optimized thin film resistor laser trimming 有权
标题翻译：金属修边镜优化薄膜电阻激光修剪
公开(公告)号：US20050030632A1
公开(公告)日：2005-02-10
申请号：US10634010
申请日：2003-08-04
申请人： Ralph Wall , Karl Robinson
发明人： Ralph Wall , Karl Robinson
IPC分类号： B23K26/06 , G02B26/00 , G02B27/14 , H01C17/242 , H01S3/08
CPC分类号： H01C17/242 , B23K26/064
摘要： A device and a method of forming the device are disclosed. The device includes a reflector, a first dielectric layer disposed on the reflector, and a thin film resistor disposed on the reflector. The reflector acts as a barrier between the thin film resistor and an underlying dielectric layer which may have a non-uniform thickness. Thus, the thickness control and uniformity of the dielectric layer underlying the reflector does not affect the laser trimming of the thin film resistor. In addition to serving as a barrier, the reflector reflects the trimming laser energy back towards the thin film resistor, thereby improving the efficiency of the laser trimming of the thin film resistor. Furthermore, the thickness of the first dielectric layer situated below the thin film resistor and above the reflector can be easily controlled to substantially optimize the laser trimming efficiency of the thin film resistor.
摘要翻译：公开了一种形成该装置的装置和方法。该装置包括反射器，设置在反射器上的第一电介质层和设置在反射器上的薄膜电阻器。反射器用作薄膜电阻器和可能具有不均匀厚度的下层电介质层之间的阻挡层。因此，反射器下面的电介质层的厚度控制和均匀性不影响薄膜电阻器的激光修整。除了作为屏障之外，反射器将修整激光能量反射回薄膜电阻器，从而提高了薄膜电阻器的激光修整的效率。此外，可以容易地控制位于薄膜电阻器下方和反射器之上的第一电介质层的厚度，从而大大优化薄膜电阻器的激光微调效率。

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