会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Quantum well module with low K crystalline covered substrates
    • 具有低K晶体覆盖基板的量子阱模块
    • US20110100408A1
    • 2011-05-05
    • US12655793
    • 2010-01-06
    • Aleksandr KushchFrederick A. LeavittDaniel KrommenhoekSaeid GhamatyNorbert B. Elsner
    • Aleksandr KushchFrederick A. LeavittDaniel KrommenhoekSaeid GhamatyNorbert B. Elsner
    • H01L35/30H01L21/02H01L35/34
    • H01L35/34C23C14/20C23C14/352C23C14/562F25B2321/023H01L35/22H01L35/32
    • A thermoelectric module comprised of a quantum well thermoelectric material with low thermal conductivity and low electrical resitivity (high conductivity) for producing n-legs and p-legs for thermoelectric modules. These qualities are achieved by fabricating crystalline quantum well super-lattice layers on a substrate material having very low thermal conductivity. Prior to depositing the super-lattice thermoelectric layers the low thermal conductivity substrate is coated with a thin layer of crystalline semi-conductor material, preferably silicon. This greatly improves the thermoelectric quality of the super-lattice quantum well layers. In preferred embodiments the super-lattice layers are about 4 nm to 20 nm thick. In preferred embodiments about 100 to 1000 of these super-lattice layers are deposited on each substrate layer, to provide films of super-lattice layers with thicknesses of in the range of about 0.4 microns to about 20 microns on much thicker substrates. The substrates may be a few microns to a few millimeters thick. The thermoelectric films are then stacked and fabricated into thermoelectric p-legs and n-legs which in turn are fabricated into thermoelectric modules. These layers of quantum well material may in preferred embodiments be separated by much thicker layers of thermal and electrical insulating material such that the volume of insulating material in each leg is at least 20 times larger than the volume of quantum well material.
    • 由热导率低的量子阱热电材料和低电阻率(高导电性)组成的热电模块,用于产生用于热电模块的n型腿和p型腿。 这些质量通过在具有非常低的热导率的衬底材料上制造结晶量子阱超晶格层来实现。 在沉积超晶格热电层之前,低导热性衬底被涂覆有薄的晶体半导体材料,优选硅。 这大大提高了超晶格量子阱层的热电质量。 在优选实施例中,超晶格层约为4nm至20nm厚。 在优选实施例中,在每个衬底层上沉积约100至1000个这些超晶格层,以在更厚的衬底上提供厚度在约0.4微米至约20微米范围内的超晶格层的膜。 衬底可以是几微米到几毫米厚。 然后将热电膜堆叠并制造成热电p支脚和n支脚,其又被制造成热电模块。 量子阱材料的这些层可以在优选的实施方案中由较厚的热和电绝缘材料层隔开,使得每个支脚中的绝缘材料的体积比量子阱材料的体积至少大20倍。
    • 3. 发明授权
    • Thermoelectric module with Si/SiC and B4 C/B9 C super-lattice legs
    • 具有Si / SiC和B4 C / B9 C超晶格腿的热电模块
    • US07342170B2
    • 2008-03-11
    • US10818130
    • 2004-04-05
    • Saeid GhamatyNorbert B. ElsnerJohn C. Bass
    • Saeid GhamatyNorbert B. ElsnerJohn C. Bass
    • H01L35/12
    • H01L35/22H01L35/26H01L35/34
    • A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.
    • 超晶格热电器件。 该装置由p腿和n腿组成,每个腿由大量具有不同电子带隙的两种材料的非常薄的交替层组成。 器件中的n脚由Si和SiC的交替层组成。 P腿由B 4 C和B 9 C的交替层组成。 在优选的实施方案中,这些层是约100埃厚。 根据本发明制造的热电模块对于冷却应用以及发电都是有用的。 该优选实施例是一种约6cm×6cm×0.76cm的热电10×10蛋箱型模块,其设计为产生70瓦,温度差为300摄氏度,模块效率约为30%。 该模块具有98个活动热电腿,每个支腿具有超过3百万个超格子层。
    • 6. 发明授权
    • Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs
    • 具有Si / SiGe和B4C / B9C超晶格腿的热电模块
    • US07038234B2
    • 2006-05-02
    • US10818028
    • 2004-04-05
    • Saeid GhamatyNorbert B. ElsnerJohn C. Bass
    • Saeid GhamatyNorbert B. ElsnerJohn C. Bass
    • H01L29/09H01L31/328H01L31/336H01L31/72H01L31/109
    • H01L35/22H01L29/155H01L35/26H01L35/32H01L35/34Y10S257/93
    • A super-lattice thermoelectric device. The device includes p-legs and n-legs, each leg having a large number of alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon germanium. The p-legs includes alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Applicants have fabricated and tested a first Si/SiGe (n-leg) and B4C/B9C (p-leg) quantum well thermocouple. Each leg was only 11 microns thick on a 5 micron Si substrate. Nevertheless, in actual tests the thermocouple operated with an amazing efficiency of 14 percent with a Th of 250 degrees C. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C with a module efficiency of about 30 percent.
    • 超晶格热电器件。 该装置包括p腿和n腿,每个腿具有大量具有不同电子带隙的两种材料的交替层。 器件中的n脚由硅和硅锗的交替层组成。 P腿包括B 4 C和B 9 C的交替层。 在优选的实施方案中,这些层是约100埃厚。 申请人已经制造和测试了第一Si / SiGe(n-leg)和B 4 C / B 9 C(p-leg)量子阱热电偶。 在5微米Si衬底上,每条腿仅为11微米厚。 然而,在实际测试中,热电偶以250摄氏度的T 达到惊人的14%的效率运行。根据本发明制造的热电模块可用于两个冷却应用以及电力 代。 该优选实施例是大约6cm×6cm×0.76cm的热电10×10蛋箱型模块,设计成产生70瓦,温度差为300摄氏度,模块效率约为30%。
    • 7. 发明授权
    • Quantum well thermoelectric material on thin flexible substrate
    • 量子阱热电材料在薄柔性基板上
    • US6096964A
    • 2000-08-01
    • US192097
    • 1998-11-13
    • Saeid GhamatyNorbert B. Elsner
    • Saeid GhamatyNorbert B. Elsner
    • H01L35/22H01L35/26H01L35/00
    • H01L35/22H01L35/26
    • Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin flexible substrate. The layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton.RTM.) coated with an even thinner film of crystalline silicon. The substrate is about 0.3 mills (127 microns) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton.RTM. substrate about 3,000 alternating layers of silicon and silicon-germanium, each layer being about 100 .ANG. and the total thickness of the layers being about 30 microns. Preferably, the silicon layer is applied in an amorphous form and heated to about 350.degree. C. to 375.degree. C. to crystallize it. In other preferred embodiments, the substrate material is thin films of other organic materials or thin films of inorganic materials such as silicon.
    • 用于热电装置的热电元件。 热电元件具有非常大数量的沉积在非常薄的柔性基板上的半导体材料的交替层。 半导体材料层在阻挡半导体材料和导电半导体材料之间交替,在导电半导体材料的薄层内产生量子阱。 导电半导体材料被掺杂以产生导电性能。 基材优选应非常薄,是具有良好热稳定性和强韧性的非常好的热和电绝缘体。 在优选实施例中,薄有机基底是涂覆有更薄的晶体硅膜的薄聚酰亚胺膜(特别是Kapton TM)。 基底厚度约为0.3毫米(127微米)。 晶体硅层约0.1微米厚。 该实施例包括在薄Kapton TM衬底的每一侧上约3,000个交替层的硅和硅 - 锗,每层约为100,层的总厚度为约30微米。 优选地,将硅层以非晶形式施加并加热至约350℃至375℃以使其结晶。 在其它优选实施例中,衬底材料是其它有机材料的薄膜或无机材料如硅的薄膜。
    • 9. 发明授权
    • Superlattice quantum well material
    • 超晶格量子阱材料
    • US5550387A
    • 1996-08-27
    • US297601
    • 1994-08-29
    • Norbert B. ElsnerSaeid Ghamaty
    • Norbert B. ElsnerSaeid Ghamaty
    • H01L29/16H01L35/22H01L29/06F25B21/02H01L23/38H01L29/12
    • H01L29/16H01L35/22Y10S257/93
    • A thermoelectric element having a very large number of alternating layers of semiconductor material. The alternating layers all have the same crystalline structure. The inventors have demonstrated that materials produced in accordance with this invention provide figures of merit more than six times that of prior art thermoelectric materials. A preferred embodiment is a superlattice of Si, as a barrier material, and SiGe, as a conducting material, both of which have the same cubic structure. Another preferred embodiment is a superlattice of B--C alloys, the layers of which would be different stoichiometric forms of B--C but in all cases the crystalline structure would be alpha 0. In a preferred embodiment the layers are grown under conditions as to cause them to be strained at their operating temperature range in order to improve the thermoelectric properties.
    • 具有非常大数量的半导体材料的交替层的热电元件。 交替层都具有相同的晶体结构。 发明人已经证明,根据本发明生产的材料提供超过现有技术的热电材料的六倍以上的品质因数。 优选的实施例是作为阻挡材料的Si的超晶格,作为导电材料的SiGe都具有相同的立方结构。 另一个优选的实施方案是BC合金的超晶格,它们的层是BC的不同化学计量形式,但是在所有情况下,晶体结构将为α0。在一个优选实施例中,在使它们变形的条件下生长层 在其工作温度范围内,以提高热电性能。
    • 10. 发明申请
    • High temperature, high efficiency thermoelectric module
    • 高温高效热电模块
    • US20100229911A1
    • 2010-09-16
    • US12590653
    • 2009-11-12
    • Frederick A. LeavittNorbert B. ElsnerJohn C. BassJohn W. McCoy
    • Frederick A. LeavittNorbert B. ElsnerJohn C. BassJohn W. McCoy
    • H01L35/20
    • H01L35/32H01L35/16H01L35/34
    • A long life, low cost, high-temperature, high efficiency thermoelectric module. Preferred embodiments include a two-part (a high temperature part and a cold temperature part) egg-crate and segmented N legs and P legs, with the thermoelectric materials in the three segments chosen for their chemical compatibility or their figure of merit in the various temperature ranges between the hot side and the cold side of the module. The legs include metal meshes partially embedded in thermoelectric segments to help maintain electrical contacts notwithstanding substantial temperature variations. In preferred embodiments a two-part molded egg-crate holds in place and provides insulation and electrical connections for the thermoelectric N legs and P legs. The high temperature part of the egg-crate is comprised of a ceramic material capable of operation at temperatures in excess of 500° C. and the cold temperature part is comprised of a thermoplastic material having very low thermal conductivity.
    • 寿命长,成本低,高温,高效率的热电模块。 优选实施例包括两部分(高温部分和冷温部分)蛋箱和分段的N腿和P腿,其中三个部分中的热电材料被选择用于它们的化学相容性或其各种品质因数 模块的热侧和冷端之间的温度范围。 腿部包括部分地嵌入热电段中的金属网,以帮助维持电接触,尽管有相当大的温度变化。 在优选实施例中,两部分模制蛋箱保持就位并为热电N腿和P腿提供绝缘和电连接。 蛋箱的高温部分由能够在超过500℃的温度下操作的陶瓷材料组成,并且冷温部分由具有非常低导热性的热塑性材料组成。