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1. 发明申请

US20050052201A1 High-voltage switches in single-well CMOS processes 有权
标题翻译：单井CMOS工艺中的高压开关
公开(公告)号：US20050052201A1
公开(公告)日：2005-03-10
申请号：US10814867
申请日：2004-03-30
申请人： Frederic Bernard , Christopher Diorio , Troy Gilliland , Alberto Pesavento , Kaila Raby , Terry Hass , John Hyde
发明人： Frederic Bernard , Christopher Diorio , Troy Gilliland , Alberto Pesavento , Kaila Raby , Terry Hass , John Hyde
IPC分类号： H03K3/356 , H03K17/10 , H03K19/0175
CPC分类号： H03K3/356113 , H03K17/102
摘要： Circuits are provided for high-voltage switching in single-well CMOS processes.
摘要翻译：电路用于单井CMOS工艺中的高压开关。

2. 发明申请

US20050063235A1 PFET nonvolatile memory 有权
标题翻译： PFET非易失性存储器
公开(公告)号：US20050063235A1
公开(公告)日：2005-03-24
申请号：US10839985
申请日：2004-05-05
申请人： Alberto Pesavento , Frederic Bernard , John Hyde
发明人： Alberto Pesavento , Frederic Bernard , John Hyde
IPC分类号： G11C16/04 , G11C20060101 , G11C5/00 , G11C7/06 , G11C11/34 , G11C16/02 , G11C16/06 , G11C16/28 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/0441 , G11C16/28 , G11C2216/10 , H01L27/115 , H01L29/7883
摘要： A nonvolatile memory cell is constructed using a floating-gate pFET readout transistor having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine the state of the cell. The gate of the pFET readout transistor provides for charge storage which can be used to represent information such as binary bits. A control capacitor structure having its first terminal coupled to a first voltage source and its second terminal coupled to the floating gate and a tunneling capacitor structure having its first terminal coupled to a second voltage source and its second terminal coupled to the floating gate are utilized in each embodiment. The control capacitor structure is fabricated so that it has much more capacitance than does the tunneling capacitor structure (and assorted stray capacitance between the floating gate and various other nodes of the cell). Manipulation of the voltages applied to the first voltage source and second voltage source (and Vdd) controls an electric field across the capacitor structure and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons onto and off of the floating gate, thus controlling the charge on the floating gate and the information value stored thereon.
摘要翻译：使用其源极连接到电源（Vdd）的浮栅pFET读出晶体管构造非易失性存储单元，其漏极提供可被感测以确定单元的状态的电流。 pFET读出晶体管的栅极提供电荷存储，可用于表示诸如二进制位之类的信息。一种控制电容器结构，其第一端耦合到第一电压源，其第二端耦合到浮置栅极，并且隧道电容器结构具有耦合到第二电压源的第一端和其耦合到浮置栅极的第二端。各实施例。制造控制电容器结构使得其具有比隧道电容器结构（以及浮动栅极和电池的各种其他节点之间的杂散电容）多得多的电容。对施加到第一电压源和第二电压源（和Vdd）的电压的操纵控制电容器结构和pFET电介质两端的电场，从而使Fowler-Nordheim将电子隧穿到浮栅上和从浮栅上，从而控制电荷浮动门和存储在其上的信息值。

3. 发明申请

US20050219932A1 Rewriteable electronic fuses 有权
公开(公告)号：US20050219932A1
公开(公告)日：2005-10-06
申请号：US10814866
申请日：2004-03-30
申请人： Christopher Diorio , Frederic Bernard , Todd Humes , Alberto Pesavento
发明人： Christopher Diorio , Frederic Bernard , Todd Humes , Alberto Pesavento
IPC分类号： G11C7/20 , G11C14/00 , G11C16/04 , G11C17/12 , G11C16/00
CPC分类号： G11C16/0441 , G11C7/20 , G11C14/00 , G11C16/045
摘要： Rewriteable electronic fuses include latches and/or logic gates coupled to one or more nonvolatile memory elements. The nonvolatile memory elements are configured to be programmed to memory values capable of causing associated electronic circuits to settle to predetermined states as power-up or reset signals are applied to the fuses. Although not required, the nonvolatile memory elements used in the rewriteable electronic fuses may comprise floating-gate transistors. An amount of charge stored on the floating gate of a given floating-gate transistor determines the memory value and, consequently, the state to which a fuse settles upon power-up or reset of the fuse.

4. 发明申请

US20050219931A1 Rewriteable electronic fuses 有权
公开(公告)号：US20050219931A1
公开(公告)日：2005-10-06
申请号：US10813907
申请日：2004-03-30
申请人： Christopher Diorio , Frederic Bernard , Todd Humes , Alberto Pesavento
发明人： Christopher Diorio , Frederic Bernard , Todd Humes , Alberto Pesavento
IPC分类号： G11C14/00 , G11C16/04 , H01L27/105 , H01L27/115 , H01L29/788 , H03K3/0233 , G11C16/00
CPC分类号： G11C16/0441 , G11C14/00 , G11C16/045 , H01L27/105 , H01L27/115 , H01L29/7883 , H03K3/02335
摘要： Rewriteable electronic fuses include latches and/or logic gates coupled to one or more nonvolatile memory elements. The nonvolatile memory elements are configured to be programmed to memory values capable of causing associated electronic circuits to settle to predetermined states as power-up or reset signals are applied to the fuses. Although not required, the nonvolatile memory elements used in the rewriteable electronic fuses may comprise floating-gate transistors. An amount of charge stored on the floating gate of a given floating-gate transistor determines the memory value and, consequently, the state to which a fuse settles upon power-up or reset of the fuse.

5. 发明申请

US20060181927A1 MTP NVM elements by-passed for programming 有权
标题翻译： MTP NVM元素被旁路进行编程
公开(公告)号：US20060181927A1
公开(公告)日：2006-08-17
申请号：US11335185
申请日：2006-01-18
申请人： Alberto Pesavento , Troy Gilliland , Frederic Bernard
发明人： Alberto Pesavento , Troy Gilliland , Frederic Bernard
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/3459 , G11C16/06 , G11C17/16
摘要： Non-Volatile Memory (NVM) cells include a selection circuit for providing an output based on selecting between an input data signal and an output of a Multiple Time Programmable (MTP) NVM element. The input data signal may be latched by a latch circuit such as a flip-flop first. The selector circuit's output is used to confirm the programming values for the MTP NVM element such that the element can be programmed correctly without losing time by reading the programmed MTP NVM element or reprogramming a misprogrammed element.
摘要翻译：非易失性存储器（NVM）单元包括用于基于输入数据信号与多时间可编程（MTP）NVM元件的输出之间的选择来提供输出的选择电路。输入数据信号可以由诸如触发器的锁存电路首先锁存。选择器电路的输出用于确认MTP NVM元件的编程值，使得可以通过读取编程的MTP NVM元件或重新编程未编程的元件而无需花费时间编程元件。

6. 发明申请

US20050237840A1 Rewriteable electronic fuses 有权
标题翻译：可重写电子保险丝
公开(公告)号：US20050237840A1
公开(公告)日：2005-10-27
申请号：US10814868
申请日：2004-03-30
申请人： Christopher Diorio , Frederic Bernard , Todd Humes , Alberto Pesavento
发明人： Christopher Diorio , Frederic Bernard , Todd Humes , Alberto Pesavento
IPC分类号： G11C7/00 , G11C11/34 , G11C16/04 , G11C16/10 , H01H37/76
CPC分类号： G11C16/0441 , G11C16/045 , G11C16/10
摘要： Rewriteable electronic fuses include latches and/or logic gates coupled to one or more nonvolatile memory elements. The nonvolatile memory elements are configured to be programmed to memory values capable of causing associated electronic circuits to settle to predetermined states as power-up or reset signals are applied to the fuses. Although not required, the nonvolatile memory elements used in the rewriteable electronic fuses may comprise floating-gate transistors. An amount of charge stored on the floating gate of a given floating-gate transistor determines the memory value and, consequently, the state to which a fuse settles upon power-up or reset of the fuse.
摘要翻译：可重写电子熔丝包括耦合到一个或多个非易失性存储元件的锁存器和/或逻辑门。非易失性存储器元件被配置为被编程为能够使相关联的电子电路稳定到预定状态的存储器值，因为上电或复位信号被施加到保险丝。虽然不是必需的，但是在可重写电子熔丝中使用的非易失性存储元件可以包括浮栅晶体管。存储在给定浮栅晶体管的浮置栅极上的电荷量确定存储器值，并且因此确定保险丝上电或复位时保险丝熔断的状态。

7. 发明授权

US08845182B2 Vessel for processing a biopharmaceutical product including protection means 有权
标题翻译：用于加工包括保护装置在内的生物制药产品的容器
公开(公告)号：US08845182B2
公开(公告)日：2014-09-30
申请号：US12681419
申请日：2008-10-01
申请人： Frederic Bernard , Eric Chevalier
发明人： Frederic Bernard , Eric Chevalier
IPC分类号： B01F7/16 , B65D30/20
CPC分类号： B01F15/0085 , B01F7/162 , B01F15/00831 , B01F2215/0032 , B65D83/0055 , C12M23/00 , C12M23/14 , C12M27/02
摘要： A vessel includes: a pocket capable of assuming a folded state and an expanded state, processing element including an active inner portion; protection element including a side wall, a lower portion and an upper portion defining an inner space, the lower portion being attached to the upper portion of the pocket, the active inner portion being provided in the inner space when the pocket is in the folded state, the peripheral portion of the inner space about the processing element defining a protection chamber; at least one insertion and/or draining opening. The active inner portion is provided inside the pocket adjacent to the lower end portion thereof, the processing element and the protection element are independent in terms of their movements, and the height of the protection chamber is variable and automatically adapts itself based on respectively, the flat-folded, unfolded and expanded states or any intermediate state of the pocket.
摘要翻译：容器包括：能够承受折叠状态和膨胀状态的袋，包括主动内部的处理元件; 保护元件包括侧壁，下部和限定内部空间的上部，所述下部附接到所述凹部的上部，所述主动内部在所述口袋处于折叠状态时设置在所述内部空间中围绕处理元件的内部空间的周边部分限定保护室; 至少一个插入和/或排出开口。主动内部部分设置在与其下端部分相邻的口袋内部，处理元件和保护元件在它们的移动方面是独立的，并且保护室的高度是可变的并且基于分别自动适应自身平折，展开和展开状态或口袋的任何中间状态。

8. 发明申请

US20140142568A1 ELONGATED ELECTROSURGICAL INSTRUMENT, A SUCTION TIP FOR THE ELECTROSURGICAL INSTRUMENT AND METHOD OF ADJUSTING THE AXIAL POSITION OF THE SUCTION TIP ON THE ELECTROSURGICAL INSTRUMENT 审中-公开
标题翻译：长期使用的静电医用仪器，电磁仪器的接收提示及调整静电放大器上的吸嘴的轴向位置的方法
公开(公告)号：US20140142568A1
公开(公告)日：2014-05-22
申请号：US14129907
申请日：2011-08-01
申请人： Frederic Bernard , Niels Kornerup , Jesper Schantz Simonsen
发明人： Frederic Bernard , Niels Kornerup , Jesper Schantz Simonsen
IPC分类号： A61B18/08 , A61B18/10
CPC分类号： A61B18/085 , A61B18/10 , A61B18/1206 , A61B18/1402 , A61B18/18 , A61B2018/00172 , A61B2018/00922 , A61B2018/0094 , A61B2018/00958 , A61B2218/008 , H01H23/06
摘要： An elongated electrosurgical instrument (1) serves to at least cutting tissue of a patient during surgery by application of electrical energy supplied from an electrosurgical generator to a surgical site. The electrosurgical instrument has a hollow elongated main body (2) with an electrode means (3). Suction means comprises a suction channel (27) extending inside the hollow elongated main body (2), a first suction port (40) arranged facing the first means (3), a second suction port (41) provided with a suction tubing (11) in communication with the vacuum source, and a suction tip (6). The suction tip (6) has a coupling end part (76) that has a first engagement means (78) for engagement with a second engagement (25) means provided on the hollow elongated main body (2). The first engagement means (78) and the second engagement means (25) are configured so that an axial position of the suction tip (6) in relation to the first means (3) is adjustable in response to movement of the suction tip (6) about and/or along a longitudinal axis (A) of said suction tip (6). The invention provides the possibility of combining separate components into plural different electrosurgical instruments and thus offers the surgeon a hitherto unknown possibility of creating his/her favourite tool with excellent suction properties.
摘要翻译：细长的电外科器械（1）用于通过将从电外科发生器供应的电能施加到手术部位来至少在手术期间切割患者的组织。电外科器械具有带电极装置（3）的中空细长主体（2）。抽吸装置包括在中空细长主体（2）内部延伸的抽吸通道（27），面向第一装置（3）布置的第一吸入口（40），设置有吸入管道（11）的第二吸入口）与吸入口（6）连通。吸嘴（6）具有联接端部（76），其具有用于与设置在中空细长主体（2）上的第二接合装置（25）接合的第一接合装置（78）。第一接合装置（78）和第二接合装置（25）被构造成使得吸头（6）相对于第一装置（3）的轴向位置可响应于吸头（6）的运动而调节）和/或沿着所述吸嘴（6）的纵向轴线（A）。本发明提供了将分离的组件组合成多个不同的电外科器械的可能性，并且因此为外科医生提供了迄今未知的创建他/她最喜欢的具有优良吸力性质的工具的可能性。

9. 发明授权

US5505050A Process and installation for the distillation of air 失效
标题翻译：空气的蒸馏过程和安装
公开(公告)号：US5505050A
公开(公告)日：1996-04-09
申请号：US338196
申请日：1994-11-09
申请人： Pascal Arriulou , Frederic Bernard , Jean-Yves Lehman
发明人： Pascal Arriulou , Frederic Bernard , Jean-Yves Lehman
IPC分类号： B01D53/04 , F25J3/04 , F25J3/08 , F25J3/00
CPC分类号： F25J3/04181 , B01D53/04 , F25J3/04018 , F25J3/04024 , F25J3/04157 , F25J3/04193 , B01D2256/10 , B01D2256/12 , B01D2257/504 , B01D2257/80 , B01D2259/402 , F25J2200/20 , F25J2205/34 , F25J2205/70 , F25J2230/04 , F25J2245/42 , F25J2270/90 , F28C2001/006 , Y02C10/08 , Y10S62/908
摘要： To regenerate the adsorbent which serves to purify compressed air from water and carbon dioxide, there is used residual gas from an air distillation apparatus (10), heated to a substantially constant moderate regeneration temperature between the temperature of the air entering the mass of adsorbent and a temperature which is at most about 50.degree. C. higher, preferably about 10.degree. to 20.degree. C. higher, than this entering air temperature. This gas is then sent to a water refrigeration tower (16) for cooling the compressed air.
摘要翻译：为了再生用于从水和二氧化碳净化压缩空气的吸附剂，使用来自空气蒸馏装置（10）的残余气体，加热到进入吸附剂质量的空气的温度和与进入的空气温度相比，温度最高为约50℃，较高，优选约10℃至20℃。然后将该气体送至用于冷却压缩空气的水冷塔（16）。

10. 发明授权

US5478453A Process for preparing disilane from monosilane by electric discharge and cryogenic trapping 失效
标题翻译：通过放电和低温捕集从甲硅烷制备乙硅烷的方法
公开(公告)号：US5478453A
公开(公告)日：1995-12-26
申请号：US206847
申请日：1994-03-07
申请人： Frederic Bernard , Valerie Borg , Pierre Didier , Daniel Guerin , Michel Gastiger , Pierre Karinthi , Alain Villermet , Antoine Willemot
发明人： Frederic Bernard , Valerie Borg , Pierre Didier , Daniel Guerin , Michel Gastiger , Pierre Karinthi , Alain Villermet , Antoine Willemot
IPC分类号： B01J19/08 , C01B33/04 , H05F3/00
CPC分类号： C01B33/04 , B01J19/088 , Y10S422/906
摘要： A process for producing disilane from monosilane comprising introducing monosilane into a reaction zone in which the monosilane is subjected to an electric discharge generated by a high frequency current. The monosilane is mixed with at least one inert gas selected from the group consisting of helium and argon. The pressure of the gaseous mixture in the reaction zone is between 0.1 and 3 bar, and the gaseous mixture is contacted in the reaction zone under electric discharge with a wall cooled to a temperature which is sufficiently low for the saturation vapor pressure of the disilane to be negligible, but not low enough for the monosilane to condense at the working partial pressure. Apparatus for conducting this process is provided.
摘要翻译：一种从甲硅烷制备乙硅烷的方法，包括将甲硅烷引入到由高频电流产生的放电进行放电的反应区中。将甲硅烷与选自氦和氩的至少一种惰性气体混合。反应区中的气体混合物的压力为0.1至3巴，并且气态混合物在放电的反应区域中与冷却至乙硅烷的饱和蒸气压足够低的温度的壁接触，可忽略不计，但不足以使甲硅烷在工作分压下凝结。提供了用于进行该过程的装置。

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