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1. 发明授权

US08264214B1 Very low voltage reference circuit 有权
标题翻译：极低电压参考电路
公开(公告)号：US08264214B1
公开(公告)日：2012-09-11
申请号：US13051648
申请日：2011-03-18
申请人： Albert Ratnakumar , Qi Xiang , Simardeep Maangat , Jun Liu
发明人： Albert Ratnakumar , Qi Xiang , Simardeep Maangat , Jun Liu
IPC分类号： G05F3/16
CPC分类号： G05F3/30
摘要： A low-voltage reference circuit may have a pair of semiconductor devices. Each semiconductor device may have an n-type semiconductor region, an n+ region in the n-type semiconductor region, a metal gate, and a gate insulator interposed between the metal gate and the n-type semiconductor region through which carriers tunnel. The metal gate may have a work function matching that of p-type polysilicon. The gate insulator may have a thickness of less than about 25 angstroms. The metal gate may form a first terminal for the semiconductor device and the n+ region and n-type semiconductor region may form a second terminal for the semiconductor device. The second terminals may be coupled to ground. A biasing circuit may use the first terminals to supply different currents to the semiconductor devices and may provide a corresponding reference output voltage at a value that is less than one volt.
摘要翻译：低压参考电路可以具有一对半导体器件。每个半导体器件可以具有n型半导体区域，n型半导体区域中的n +区域，金属栅极和介于金属栅极和n型半导体区域之间的栅极绝缘体，载流子穿过该栅极绝缘体。金属栅极可以具有与p型多晶硅相匹配的功函数。栅极绝缘体可以具有小于约25埃的厚度。金属栅极可以形成用于半导体器件的第一端子，并且n +区域和n型半导体区域可以形成用于半导体器件的第二端子。第二端子可以接地。偏置电路可以使用第一端子来向半导体器件提供不同的电流，并且可以将相应的参考输出电压提供在小于1伏的值。

2. 发明申请

US20120235662A1 VERY LOW VOLTAGE REFERENCE CIRCUIT 有权
标题翻译：非常低的电压参考电路
公开(公告)号：US20120235662A1
公开(公告)日：2012-09-20
申请号：US13051648
申请日：2011-03-18
申请人： Albert Ratnakumar , Qi Xiang , Simardeep Maangat , Jun Liu
发明人： Albert Ratnakumar , Qi Xiang , Simardeep Maangat , Jun Liu
IPC分类号： G05F3/02
CPC分类号： G05F3/30
摘要： A low-voltage reference circuit may have a pair of semiconductor devices. Each semiconductor device may have an n-type semiconductor region, an n+ region in the n-type semiconductor region, a metal gate, and a gate insulator interposed between the metal gate and the n-type semiconductor region through which carriers tunnel. The metal gate may have a work function matching that of p-type polysilicon. The gate insulator may have a thickness of less than about 25 angstroms. The metal gate may form a first terminal for the semiconductor device and the n+ region and n-type semiconductor region may form a second terminal for the semiconductor device. The second terminals may be coupled to ground. A biasing circuit may use the first terminals to supply different currents to the semiconductor devices and may provide a corresponding reference output voltage at a value that is less than one volt.
摘要翻译：低压参考电路可以具有一对半导体器件。每个半导体器件可以具有n型半导体区域，n型半导体区域中的n +区域，金属栅极和介于金属栅极和n型半导体区域之间的栅极绝缘体，载流子穿过该栅极绝缘体。金属栅极可以具有与p型多晶硅相匹配的功函数。栅极绝缘体可以具有小于约25埃的厚度。金属栅极可以形成用于半导体器件的第一端子，并且n +区域和n型半导体区域可以形成用于半导体器件的第二端子。第二端子可以接地。偏置电路可以使用第一端子来向半导体器件提供不同的电流，并且可以将相应的参考输出电压提供在小于1伏的值。

3. 发明授权

US08482963B1 Integrated circuits with asymmetric and stacked transistors 有权
标题翻译：具有不对称和堆叠晶体管的集成电路
公开(公告)号：US08482963B1
公开(公告)日：2013-07-09
申请号：US12629831
申请日：2009-12-02
申请人： Jun Liu , Yanzhong Xu , Shankar Sinha , Shih-Lin S. Lee , Jeffrey Xiaoqi Tung , Albert Ratnakumar , Qi Xiang , Irfan Rahim , Andy L. Lee , Jeffrey T. Watt , Srinivas Perisetty
发明人： Jun Liu , Yanzhong Xu , Shankar Sinha , Shih-Lin S. Lee , Jeffrey Xiaoqi Tung , Albert Ratnakumar , Qi Xiang , Irfan Rahim , Andy L. Lee , Jeffrey T. Watt , Srinivas Perisetty
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
摘要翻译：不对称晶体管可以通过在晶体管的一个源极 - 漏极端子上而不是另一个产生凹穴注入来形成。也可以使用具有不同功函数的第一和第二栅极导体的双栅结构来形成非对称晶体管。可以通过堆叠相同通道类型的两个晶体管串联形成堆叠晶体管。两个晶体管中的每一个的源极 - 漏极端子之一连接到公共节点。两个晶体管的栅极也连接在一起。两个晶体管可以具有不同的阈值电压。位于堆叠晶体管中较高的晶体管的阈值电压可以具有比堆叠晶体管中的另一个晶体管更低的阈值电压。堆叠的晶体管可用于减少诸如存储器单元的电路中的漏电流。不对称晶体管也可用于存储器单元中以减少泄漏。

4. 发明授权

US08242581B1 Mixed-gate metal-oxide-semiconductor varactors 有权
标题翻译：混合栅极金属氧化物半导体变容二极管
公开(公告)号：US08242581B1
公开(公告)日：2012-08-14
申请号：US12324793
申请日：2008-11-26
申请人： Albert Ratnakumar , Wilson Wong , Jun Liu , Qi Xiang , Jeffrey Xiaoqi Tung
发明人： Albert Ratnakumar , Wilson Wong , Jun Liu , Qi Xiang , Jeffrey Xiaoqi Tung
IPC分类号： H01L29/93
CPC分类号： H01L29/94 , H01L29/4983 , H01L29/93
摘要： Mixed gate varactors are provided. The mixed gate varactors may include a semiconductor region of a given doping type. A first terminal for the varactor may be formed from a gate structure on the semiconductor region. A second terminal for the varactor may be formed from a heavily doped region in the semiconductor region that has the same doping type as the given doping type. A third terminal for the varactor may be formed from a heavily doped region in the semiconductor region that has a different doping type than the given doping type. The gate structure may include multiple gate conductors on a gate insulator. The gate insulator may be a high-K dielectric. The gate conductors may be metals or other materials that have different work functions. A conductive layer such as a layer of polysilicon may electrically connect the first and second gate conductors.
摘要翻译：提供混合栅极变容二极管。混合栅极变容二极管可以包括给定掺杂型的半导体区域。用于变容二极管的第一端可以由半导体区域上的栅极结构形成。用于变容二极管的第二端子可以由具有与给定掺杂类型相同的掺杂类型的半导体区域中的重掺杂区域形成。用于变容二极管的第三端子可以由具有与给定掺杂类型不同的掺杂类型的半导体区域中的重掺杂区域形成。栅极结构可以包括栅极绝缘体上的多个栅极导体。栅极绝缘体可以是高K电介质。栅极导体可以是具有不同功函数的金属或其它材料。诸如多晶硅层的导电层可电连接第一和第二栅极导体。

5. 发明授权

US08530976B1 Memory element transistors with reversed-workfunction gate conductors 有权
标题翻译：具有反功能栅极导体的存储元件晶体管
公开(公告)号：US08530976B1
公开(公告)日：2013-09-10
申请号：US13113896
申请日：2011-05-23
申请人： Albert Ratnakumar , Qi Xiang , Jun Liu
发明人： Albert Ratnakumar , Qi Xiang , Jun Liu
IPC分类号： H01L21/70
CPC分类号： H01L29/7833 , H01L21/823842 , H01L27/1104
摘要： Integrated circuits may be provided that include memory elements that produce output control signals and corresponding programmable logic circuitry that receives the output control signals from the memory elements. The memory elements may include bistable storage elements formed from circuits such as cross-coupled inverters. The inverters may include n-channel metal-oxide-semiconductor transistors with p-metal gate conductors and n-channel metal-oxide-semiconductor transistors with p-metal gate conductors. These gate conductor assignments are the reverse of the gate conductor assignments used in the n-channel and p-channel transistors in other circuitry such as the programmable logic circuitry. The reversed gate conductor assignments increase the threshold voltages of the transistors in the memory elements to improve reliability in scenarios in which the memory elements are overdriving pass transistors in the programmable logic circuitry.
摘要翻译：可以提供集成电路，其包括产生输出控制信号的存储器元件和从存储器元件接收输出控制信号的相应的可编程逻辑电路。存储器元件可以包括由诸如交叉耦合的反相器的电路形成的双稳态存储元件。反相器可以包括具有p金属栅极导体的n沟道金属氧化物半导体晶体管和具有p型金属栅极导体的n沟道金属氧化物半导体晶体管。这些栅极导体分配与在诸如可编程逻辑电路的其它电路中的n沟道和p沟道晶体管中使用的栅极导体分配相反。反向栅极导体分配增加存储器元件中的晶体管的阈值电压，以提高存储元件过驱动可编程逻辑电路中的通过晶体管的情况下的可靠性。

6. 发明申请

US20100127332A1 INTEGRATED CIRCUIT TRANSISTORS 有权
标题翻译：集成电路晶体管
公开(公告)号：US20100127332A1
公开(公告)日：2010-05-27
申请号：US12324791
申请日：2008-11-26
申请人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
发明人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
IPC分类号： H01L29/68 , H01L21/18
CPC分类号： H01L21/823842 , H01L21/28 , H01L21/28061 , H01L29/49 , H01L29/4983 , H01L29/66477 , H01L29/66545 , H01L29/7831 , H01L29/7833
摘要： Metal-oxide-semiconductor transistors are provided. A metal-oxide-semiconductor transistor may be formed on a semiconductor substrate. Source and drain regions may be formed in the substrate. A gate insulator such as a high-K dielectric may be formed between the source and drain regions. A gate may be formed from multiple gate conductors. The gate conductors may be metals with different workfunctions. A first of the gate conductors may form a pair of edge gate conductors that are adjacent to dielectric spacers. An opening between the edge gate conductors may be filled with the second gate conductor to form a center gate conductor. A self-aligned gate formation process may be used in fabricating the metal-oxide-semiconductor transistor.
摘要翻译：提供了金属氧化物半导体晶体管。可以在半导体衬底上形成金属氧化物半导体晶体管。源极和漏极区可以形成在衬底中。可以在源极和漏极区域之间形成诸如高K电介质的栅极绝缘体。栅极可以由多个栅极导体形成。栅极导体可以是具有不同功函数的金属。栅极导体中的第一个可以形成与电介质间隔物相邻的一对边缘栅极导体。边缘栅极导体之间的开口可以用第二栅极导体填充以形成中心栅极导体。可以在制造金属氧化物半导体晶体管中使用自对准栅极形成工艺。

7. 发明授权

US08804407B1 PMOS pass gate 有权
标题翻译： PMOS通孔
公开(公告)号：US08804407B1
公开(公告)日：2014-08-12
申请号：US13181219
申请日：2011-07-12
申请人： Jun Liu , Albert Ratnakumar , Irfan Rahim , Qi Xiang
发明人： Jun Liu , Albert Ratnakumar , Irfan Rahim , Qi Xiang
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , H03K2217/0054
摘要： An IC that includes a memory cell and a pass gate coupled to the memory cell, where the pass gate includes a PMOS transistor, is described. In one implementation, the PMOS transistor has a negative threshold voltage. In one implementation, the memory cell includes thick oxide transistors.
摘要翻译：描述了包括耦合到存储器单元的存储单元和通过栅极的IC，其中栅极包括PMOS晶体管。在一个实现中，PMOS晶体管具有负阈值电压。在一个实现中，存储单元包括厚的氧化物晶体管。

8. 发明授权

US08735983B2 Integrated circuit transistors with multipart gate conductors 有权
标题翻译：具有多部分栅极导体的集成电路晶体管
公开(公告)号：US08735983B2
公开(公告)日：2014-05-27
申请号：US12324791
申请日：2008-11-26
申请人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
发明人： Jun Liu , Albert Ratnakumar , Qi Xiang , Jeffrey Xiaoqi Tung
IPC分类号： H01L21/02 , H01L21/336 , H01L21/8238 , H01L29/66 , H01L21/28 , H01L29/49
CPC分类号： H01L21/823842 , H01L21/28 , H01L21/28061 , H01L29/49 , H01L29/4983 , H01L29/66477 , H01L29/66545 , H01L29/7831 , H01L29/7833
摘要： Metal-oxide-semiconductor transistors are provided. A metal-oxide-semiconductor transistor may be formed on a semiconductor substrate. Source and drain regions may be formed in the substrate. A gate insulator such as a high-K dielectric may be formed between the source and drain regions. A gate may be formed from multiple gate conductors. The gate conductors may be metals with different workfunctions. A first of the gate conductors may form a pair of edge gate conductors that are adjacent to dielectric spacers. An opening between the edge gate conductors may be filled with the second gate conductor to form a center gate conductor. A self-aligned gate formation process may be used in fabricating the metal-oxide-semiconductor transistor.
摘要翻译：提供了金属氧化物半导体晶体管。可以在半导体衬底上形成金属氧化物半导体晶体管。源极和漏极区可以形成在衬底中。可以在源极和漏极区域之间形成诸如高K电介质的栅极绝缘体。栅极可以由多个栅极导体形成。栅极导体可以是具有不同功函数的金属。栅极导体中的第一个可以形成与电介质间隔物相邻的一对边缘栅极导体。边缘栅极导体之间的开口可以用第二栅极导体填充以形成中心栅极导体。可以在制造金属氧化物半导体晶体管中使用自对准栅极形成工艺。

9. 发明授权

US08138791B1 Stressed transistors with reduced leakage 有权
标题翻译：压力降低的晶体管泄漏
公开(公告)号：US08138791B1
公开(公告)日：2012-03-20
申请号：US12694603
申请日：2010-01-27
申请人： Albert Ratnakumar , Jun Liu , Jeffrey Xiaoqi Tung , Qi Xiang
发明人： Albert Ratnakumar , Jun Liu , Jeffrey Xiaoqi Tung , Qi Xiang
IPC分类号： H03K19/177
CPC分类号： H03K19/0008 , H01L27/11807 , H01L29/78 , H01L29/7843 , H01L29/7847 , H01L29/7848
摘要： Integrated circuits with stressed transistors are provided. Stressing transistors may increase transistor threshold voltage without the need to increase channel doping. Stressing transistors may reduce total leakage currents. It may be desirable to compressively stress N-channel metal-oxide-semiconductor (NMOS) transistors and tensilely stress P-channel metal-oxide-semiconductor (PMOS) transistors to reduce leakage currents. Techniques that can be used to alter the amount of stressed experienced by transistors may include forming a stress-inducing layer, forming a stress liner, forming diffusion active regions using silicon germanium, silicon carbon, or standard silicon, implementing transistors in single-finger instead of multi-finger configurations, and implanting particles. Any combination of these techniques may be used to provide appropriate amounts of stress to increase the performance or decrease the total leakage current of a transistor.
摘要翻译：提供了具有应力晶体管的集成电路。应力晶体管可以增加晶体管阈值电压，而不需要增加沟道掺杂。应力晶体管可能会减少总漏电流。可能需要压缩应力N沟道金属氧化物半导体（NMOS）晶体管和拉伸应力P沟道金属氧化物半导体（PMOS）晶体管以减少漏电流。可用于改变晶体管经受的应力的技术可包括形成应力诱导层，形成应力衬垫，使用硅锗，硅碳或标准硅形成扩散有源区，以单指代替晶体管的多指配置和植入颗粒。可以使用这些技术的任何组合来提供适当量的应力以增加晶体管的性能或降低总泄漏电流。

10. 发明授权

US08081502B1 Memory elements with body bias control 有权
标题翻译：记忆元素与身体偏差控制
公开(公告)号：US08081502B1
公开(公告)日：2011-12-20
申请号：US12345560
申请日：2008-12-29
申请人： Irfan Rahim , Jun Liu , Andy L. Lee , William Bradley Vest , Lu Zhou , Qi Xiang , Yanzhong Yu , Jeffrey Xiaoqi Tung , Albert Ratnakumar
发明人： Irfan Rahim , Jun Liu , Andy L. Lee , William Bradley Vest , Lu Zhou , Qi Xiang , Yanzhong Yu , Jeffrey Xiaoqi Tung , Albert Ratnakumar
IPC分类号： G11C11/00
CPC分类号： G11C11/412
摘要： An integrated circuit with memory elements is provided. The memory elements may have memory element transistors with body terminals. Body bias control circuitry may supply body bias voltages that strengthen or weaken memory element transistors to improve read and write margins. The body bias control circuitry may dynamically control body bias voltages so that time-varying body bias voltages are supplied to memory element transistors. Address transistors and latch transistors in the memory elements may be selectively strengthened and weakened. Process variations may be compensated by weakening fast transistors and strengthening slow transistors with body bias adjustments.
摘要翻译：提供了一种具有存储元件的集成电路。存储器元件可以具有带有主体端子的存储器元件晶体管。体偏置控制电路可以提供加强或削弱存储元件晶体管的体偏置电压，以改善读和写余量。体偏置控制电路可以动态地控制体偏置电压，从而将时变体偏置电压提供给存储元件晶体管。存储元件中的地址晶体管和锁存晶体管可以被选择性地加强和削弱。过程变化可以通过削弱快速晶体管和加强具有体偏置调整的慢晶体管来补偿。

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