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1. 发明授权

US08735963B2 Flash memory cells having leakage-inhibition layers 有权
标题翻译：具有泄漏抑制层的闪存单元
公开(公告)号：US08735963B2
公开(公告)日：2014-05-27
申请号：US12168545
申请日：2008-07-07
申请人： Ming-Tsong Wang , Tong-Chern Ong , Albert Chin , Hsueh-Jen Yang
发明人： Ming-Tsong Wang , Tong-Chern Ong , Albert Chin , Hsueh-Jen Yang
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L29/513 , H01L29/518
摘要： A semiconductor device includes a semiconductor substrate; a tunneling layer over the semiconductor substrate, wherein the tunneling layer has a first conduction band; a storage layer over the tunneling layer, wherein the storage layer has a second conduction band; a blocking layer over the storage layer, wherein the blocking layer has a third conduction band; a gate electrode over the blocking layer; and at least one of a first leakage-inhibition layer and a second leakage-inhibition layer. The first leakage-inhibition layer is between the tunneling layer and the storage layer, and has a fourth conduction band lower than the first conduction band. The second leakage-inhibition layer is between the blocking layer and the gate electrode, and has a fifth conduction band lower than the third conduction band.
摘要翻译：半导体器件包括半导体衬底; 在所述半导体衬底上的隧道层，其中所述隧道层具有第一导带; 在所述隧道层上的存储层，其中所述存储层具有第二导带; 在所述存储层上的阻挡层，其中所述阻挡层具有第三导带; 阻挡层上的栅电极; 以及第一泄漏抑制层和第二泄漏抑制层中的至少一个。第一泄漏抑制层在隧道层和存储层之间，并且具有比第一导带低的第四导带。第二泄漏抑制层位于阻挡层和栅电极之间，并且具有比第三导带低的第五导带。

2. 发明授权

US08197528B2 Low profile medical stent 有权
标题翻译：低调医用支架
公开(公告)号：US08197528B2
公开(公告)日：2012-06-12
申请号：US11649619
申请日：2007-01-04
申请人： Darragh Colgan , Peter A. Hamilton , Paul DiCarlo , Andrew J. Campbell , Sean Gilligan , Albert Chin , Kristian DiMatteo
发明人： Darragh Colgan , Peter A. Hamilton , Paul DiCarlo , Andrew J. Campbell , Sean Gilligan , Albert Chin , Kristian DiMatteo
IPC分类号： A61F2/06 , A61F2/00
CPC分类号： A61F2/90 , A61F2/07 , A61F2/95 , A61F2/966 , A61F2002/9517 , A61F2002/9534 , A61F2002/9665 , A61F2210/0076 , A61F2220/0016 , A61F2230/0054 , A61F2250/0098
摘要： The present invention relates to a medical prosthesis having a low profile for delivery into a body lumen. The stent includes a plurality of geometric cells defining the stent, which has first and second opposed open ends; and a plurality of wire strands woven to form a plurality of crossed regions defining the geometric cells. Each wire strand has strand ends and the strand ends are disposed at the second end of the stent.
摘要翻译：本发明涉及具有用于输送到体腔中的低轮廓的医疗假体。支架包括限定支架的多个几何细胞，其具有第一和第二相对的开放端; 以及编织以形成限定几何单元的多个交叉区域的多个线股。每根线股具有股线端部，股线端部设置在支架的第二端。

3. 发明申请

US20120113561A1 CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：电容器装置及其形成方法
公开(公告)号：US20120113561A1
公开(公告)日：2012-05-10
申请号：US12939222
申请日：2010-11-04
申请人： Albert Chin
发明人： Albert Chin
IPC分类号： H01G4/06 , B23K26/00
CPC分类号： H01G4/085 , H01G4/33
摘要： The present invention related to a method for forming a capacitor device, comprising steps of: providing a substrate, forming a first metal layer on the substrate, forming a dielectric on the first metal layer, applying a laser-annealing to the dielectric, and forming a second metal layer on the dielectric.
摘要翻译：本发明涉及一种形成电容器器件的方法，包括以下步骤：提供衬底，在衬底上形成第一金属层，在第一金属层上形成电介质，对电介质进行激光退火，以及形成电介质上的第二金属层。

4. 发明授权

US07172617B2 Stent delivery system 有权
标题翻译：支架输送系统
公开(公告)号：US07172617B2
公开(公告)日：2007-02-06
申请号：US10046658
申请日：2002-01-14
申请人： Darragh Colgan , Peter A. Hamilton , Paul DiCarlo , Andrew J. Campbell , Sean Gilligan , Albert Chin , Kristian DiMatteo
发明人： Darragh Colgan , Peter A. Hamilton , Paul DiCarlo , Andrew J. Campbell , Sean Gilligan , Albert Chin , Kristian DiMatteo
IPC分类号： A61F2/06 , A61F2/00
CPC分类号： A61F2/90 , A61F2/07 , A61F2/95 , A61F2/966 , A61F2002/9517 , A61F2002/9534 , A61F2002/9665 , A61F2210/0076 , A61F2220/0016 , A61F2230/0054 , A61F2250/0098
摘要： The present invention relates to a system for delivering a medical prosthesis into a body lumen. A preferred embodiment of the invention utilizes a catheter having a stent mounted at the distal end that is released into the body lumen by movement of an outer sheath covering the stent in the proximal direction. The stent expands to conform to the inner wall of the lumen and the catheter is withdrawn.
摘要翻译：本发明涉及一种用于将医用假体递送到体腔中的系统。本发明的优选实施例利用具有安装在远端的支架的导管，其通过在近端方向上覆盖支架的外护套的移动而释放到体腔中。支架膨胀以符合内腔的内壁，导管被取出。

5. 发明申请

US20060079915A1 Temporary anastomotic seal and method 失效
标题翻译：临时吻合口腔和方法
公开(公告)号：US20060079915A1
公开(公告)日：2006-04-13
申请号：US10123470
申请日：2002-04-15
申请人： Albert Chin , Dwight Morejohn , Charles Taylor , Steven Choi , Eugene Reis , John Davis , Geoffrey Willis , Edward Pineda , Kushal Vepa
发明人： Albert Chin , Dwight Morejohn , Charles Taylor , Steven Choi , Eugene Reis , John Davis , Geoffrey Willis , Edward Pineda , Kushal Vepa
IPC分类号： A61B17/08
CPC分类号： A61B17/0057 , A61B17/12022 , A61B17/12027 , A61B17/12031 , A61B17/12036 , A61B17/1204 , A61B17/12045 , A61B17/32053 , A61B2017/00362 , A61B2017/00575 , A61B2017/0061 , A61B2017/00632 , A61B2017/00637 , A61B2017/00641 , A61B2017/00659 , A61B2017/1107
摘要： Forming a proximal anastomosis on an aortic wall includes method and instrumentation and apparatus for forming an aortic puncture and inserting into the vessel through the puncture a fluid-impervious sealing element with a protruding retainer. An anastomosis of a graft vessel over the puncture is partially completed with the retainer of the sealing element protruding through the partial anastomosis. The retainer facilitates removal of the sealing element from the partial anastomosis prior to completion of the procedure.
摘要翻译：在主动脉壁上形成近端吻合包括用于形成主动脉穿刺的方法和仪器和装置，并且通过穿刺插入具有突出保持器的不透液体的密封元件的容器中。通过部分吻合突出的密封元件的保持器部分地完成了在穿刺上的移植血管的吻合。保持器有助于在完成手术之前从部分吻合中去除密封元件。

6. 发明申请

US20060052660A1 Apparatus and methods for cardiac restraint 审中-公开
公开(公告)号：US20060052660A1
公开(公告)日：2006-03-09
申请号：US11265881
申请日：2005-11-02
申请人： Albert Chin
发明人： Albert Chin
IPC分类号： A61F2/00
CPC分类号： A61B17/3417 , A61B1/00154 , A61B17/00008 , A61B17/06109 , A61B17/3403 , A61B17/3421 , A61B17/3468 , A61B17/3478 , A61B18/1482 , A61B90/11 , A61B90/39 , A61B2017/00243 , A61B2017/00247 , A61B2017/061 , A61B2017/22077 , A61B2017/306 , A61B2017/320044 , A61B2017/3445 , A61B2017/3488 , A61B2018/00291 , A61B2018/00392 , A61B2018/00982 , A61B2090/036 , A61B2090/062 , A61F2/2481 , A61F2002/2484 , A61N1/0587 , A61N2001/0578
摘要： Apparatus and methods for using the apparatus are disclosed for cardiac restraint. More specifically, the apparatus and methods are directed to accessing the pericardium, accessing the heart within the pericardium, and restraining the heart by at least partially enclosing the heart with the apparatus. An embodiment of a cardiac restraint apparatus according to the present invention comprises a jacket, the jacket having a rim which defines an opening for receiving a heart. The apparatus also comprises a knot pusher that has a hollow elongate body, as well as a strand that extends around the rim of the jacket and is tied into a slipknot. The strand is positioned such that at least one end portion of the strand extends through the knot pusher such that a distal end of the knot pusher can be moved into engagement with the slipknot, whereby pulling the end portion of the strand away from the heart while pushing the knot pusher against the slipknot and reducing the diameter of the opening defined by the rim. In addition, the apparatus comprises one or more guide elements that are attached to the jacket.

7. 发明授权

US06436056B1 Polymeric implements for torque transmission 失效
标题翻译：用于扭矩传递的聚合物
公开(公告)号：US06436056B1
公开(公告)日：2002-08-20
申请号：US09114458
申请日：1998-07-13
申请人： James C. Wang , Albert Chin , James B. Daigle , Douglas J. Daniels , Richard M. Demello , John F. Hartnett , Robert E. Reid , Christopher A. Rowland , Charles Warich , Thomas A. Svatek
发明人： James C. Wang , Albert Chin , James B. Daigle , Douglas J. Daniels , Richard M. Demello , John F. Hartnett , Robert E. Reid , Christopher A. Rowland , Charles Warich , Thomas A. Svatek
IPC分类号： A61B500
CPC分类号： A61M25/104 , B29K2021/00 , B29L2031/7542
摘要： Implements, particularly medical instruments, formed at least in part of elongated polymer members, exhibit high torque fidelity after processing with tension, heat, and twisting. The processing orients the polymer in generally helical paths so that torque imposed at the proximal end can be transmitted to the distal end without substantial whipping, even if the implement follows a long and tortuous pathway. Applications include medical guidewires, catheters, and driveshafts.
摘要翻译：至少部分细长聚合物构件形成的特别是医疗器械的实施在用张力，加热和扭转加工后表现出高扭矩保真度。加工将聚合物定向在大致螺旋状路径中，使得施加在近端处的扭矩可以传递到远端而没有实质的鞭打，即使该工具遵循长而曲折的路径。应用包括医疗导丝，导管和传动轴。

8. 发明申请

US20110193043A1 Ultra-Low Energy RRAM with Good Endurance and Retention 审中-公开
标题翻译：超低能量RRAM具有良好的耐久性和保留性
公开(公告)号：US20110193043A1
公开(公告)日：2011-08-11
申请号：US12700726
申请日：2010-02-05
申请人： Albert Chin
发明人： Albert Chin
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , G11C13/0007 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： This invention proposes an ultra-low energy (ULE) RRAM with electrode—1/covalent-bond-dielectric/metal-oxide/electrode—2/substrate structure, where the sequence of covalent-bond-dielectric layer and metal-oxide layer is exchangeable. Stacked dielectric layers of covalent-bond-dielectric and metal-oxide are used to improve the switching power and energy, retention and cycling endurance of resistance random access memory.
摘要翻译：本发明提出了具有电极1 /共价键 - 电介质/金属氧化物/电极2 /衬底结构的超低能量（ULE）RRAM，其中共价键介电层和金属氧化物层的顺序为可交换使用共价 - 电介质和金属氧化物的堆叠电介质层来提高电阻随机存取存储器的开关功率和能量，保持和循环耐久性。

9. 发明授权

US07579646B2 Flash memory with deep quantum well and high-K dielectric 有权
标题翻译：具有深量子阱和高K电介质的闪存
公开(公告)号：US07579646B2
公开(公告)日：2009-08-25
申请号：US11440667
申请日：2006-05-25
申请人： Ming-Tsong Wang , Tong-Chern Ong , Albert Chin , Chun-Hung Lai
发明人： Ming-Tsong Wang , Tong-Chern Ong , Albert Chin , Chun-Hung Lai
IPC分类号： H01L29/08
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： A flash memory cell includes a substrate and a gate structure formed on the substrate. The gate structure includes a tunneling layer over the substrate, a storage layer over the tunneling layer, a blocking layer over the storage layer, and a gate electrode over the dielectric. The storage layer preferably has a conduction band lower than a conduction band of silicon. The blocking layer is preferably formed of a high-k dielectric material.
摘要翻译：闪存单元包括形成在基板上的基板和栅极结构。栅极结构包括在衬底上的隧道层，隧道层上的存储层，存储层上的阻挡层和电介质上的栅电极。存储层优选具有比硅的导带低的导带。阻挡层优选由高k电介质材料形成。

10. 发明申请

US20090014813A1 Metal Gates of PMOS Devices Having High Work Functions 有权
标题翻译：具有高功函数的PMOS器件的金属栅极
公开(公告)号：US20090014813A1
公开(公告)日：2009-01-15
申请号：US11840365
申请日：2007-08-17
申请人： Donald Y. Chao , Albert Chin , Ping-Fang Hung , Foug-Yu Yen , Kang-Cheng Lin , Kuo-Tai Huang
发明人： Donald Y. Chao , Albert Chin , Ping-Fang Hung , Foug-Yu Yen , Kang-Cheng Lin , Kuo-Tai Huang
IPC分类号： H01L29/78
CPC分类号： H01L21/28185 , H01L21/28097 , H01L21/28202 , H01L29/4975 , H01L29/517 , H01L29/665
摘要： A semiconductor structure includes a refractory metal silicide layer; a silicon-rich refractory metal silicide layer on the refractory metal silicide layer; and a metal-rich refractory metal silicide layer on the silicon-rich refractory metal silicide layer. The refractory metal silicide layer, the silicon-rich refractory metal silicide layer and the metal-rich refractory metal silicide layer include same refractory metals. The semiconductor structure forms a portion of a gate electrode of a metal-oxide-semiconductor device.
摘要翻译：半导体结构包括难熔金属硅化物层; 在难熔金属硅化物层上的富硅难熔金属硅化物层; 和富硅难熔金属硅化物层上的富金属难熔金属硅化物层。难熔金属硅化物层，富硅难熔金属硅化物层和富含金属的难熔金属硅化物层包括相同的难熔金属。半导体结构形成金属氧化物半导体器件的栅电极的一部分。

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