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1. 发明授权

US5576237A Method of manufacturing a capacitor coupled contactless imager with high resolution and wide dynamic range 失效
标题翻译：制造具有高分辨率和宽动态范围的电容耦合非接触式成像仪的方法
公开(公告)号：US5576237A
公开(公告)日：1996-11-19
申请号：US543960
申请日：1995-10-17
申请人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
发明人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
IPC分类号： H01L27/105 , H01L27/146 , H01L31/11 , H01L21/8222
CPC分类号： H01L31/1105 , H01L27/105 , Y10S148/124
摘要： A capacitor coupled contactless imager structure and a method of manufacturing the structure results in a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface of the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the phototransistor. Silicon dioxide separates the poly1 emitter content and exposed surfaces at the base region from a layer of poly2 about 3000-4000 .ANG. thick that partially covers the base region; the gates of the CMOS peripheral devices are also poly2. The poly2 over the base region serves as a base coupling capacitor and a row conductor for the imager structure. The thickness of the poly2 capacitor plate allows it to be doped utilizing conventional techniques and silicided to improve the RC constant.
摘要翻译：电容器耦合的非接触式成像器结构和制造该结构的方法产生一种光电晶体管，其结构包括形成在P型半导体材料中的N型集电极区域。在集电区域形成P型基极区域。形成与P型基极区域的表面接触的n掺杂多晶硅发射极触点，使得在基极区域中形成n +外延区域作为光电晶体管的发射极。二氧化硅将poly1发射体含量和基底区域的暴露表面与部分覆盖基极区域的约3000-4000厚的poly2层分离; CMOS外围器件的栅极也是poly2。基极区域上的poly2用作成像器结构的基极耦合电容器和行导体。 poly2电容器板的厚度允许使用常规技术进行掺杂，并且硅化以改善RC常数。

2. 发明授权

US5566044A Base capacitor coupled photosensor with emitter tunnel oxide for very wide dynamic range in a contactless imaging array 失效
标题翻译：基极电容耦合光电传感器与发射极隧道氧化物，用于非接触式成像阵列中的非常宽的动态范围
公开(公告)号：US5566044A
公开(公告)日：1996-10-15
申请号：US438549
申请日：1995-05-10
申请人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
发明人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
IPC分类号： H01L27/146 , H01L31/11 , H01G4/06 , H01L23/58 , H01L31/062 , H01L31/18
CPC分类号： H01L31/1105 , H01L27/14681
摘要： A technique for decreasing the effective gain of a bipolar phototransistor at high light levels makes the image usable over a greatly extended range of illumination conditions. The effective current gain at high light levels is reduced by fabricating a "non-ideal" emitter, such as by inserting a thin 20 521 tunnel oxide between the emitter and base junction. The tunnel oxide between the emitter and base serves as a variable resistor as well as a good junction for carrier injection from the emitter. The total base voltage is the sum of the oxide voltage and the intrinsic base voltage. At high image intensity, the bipolar phototransistor will gradually enter into the saturation mode, i.e., the base to collector junction is forward biased. The beta is thus reduced. The bias of the collector should be about 0.3-0.8 V higher than the emitter at the 20.ANG. tunnel oxide thickness for optimum operation.
摘要翻译：降低双极光电晶体管在高光照条件下的有效增益的技术使得图像在大范围的照明条件下可用。通过制造“非理想”发射器，例如通过在发射极和基极结之间插入薄的20 521隧道氧化物，可以降低高光级的有效电流增益。发射极和基极之间的隧道氧化物用作可变电阻器，以及用于从发射极注入载流子的良好结。总基极电压是氧化物电压和本征基极电压之和。在高图像强度下，双极光电晶体管将逐渐进入饱和模式，即基极到集电极结正向偏置。因此，beta被减少了。在20 ANGSTROM隧道氧化物厚度下，集电极的偏压应比发射极高0.3-0.8V，以获得最佳的操作。

3. 发明授权

US5837574A Method of manufacturing a thin poly, capacitor coupled contactless imager with high resolution and wide dynamic range 失效
标题翻译：制造具有高分辨率和宽动态范围的薄型多电容耦合非接触式成像仪的方法
公开(公告)号：US5837574A
公开(公告)日：1998-11-17
申请号：US789397
申请日：1997-01-29
申请人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
发明人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
IPC分类号： H01L21/8234 , H01L21/8238 , H01L27/146 , H01L21/8242
CPC分类号： H01L27/14609 , H01L21/823406 , H01L21/8238 , Y10S148/01 , Y10S148/124
摘要： A capacitor coupled contactless imager structure and method of manufacturing the structure results in a phototransistor that includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface of the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the imager phototransistor. Silicon dioxide separates the polysilicon emitter contact and exposed surfaces of the base region from a layer of poly2 about 500-600 .ANG. thick that is formed to cover the entire base region.
摘要翻译：电容耦合的非接触式成像器结构及其结构的制造方法产生包含在P型半导体材料中形成的N型集电极区域的光电晶体管。在集电区域形成P型基极区域。形成与P型基极区域的表面接触的n掺杂多晶硅发射极接触，使得在基极区域中形成n +外延区域作为成像器光电晶体管的发射极。二氧化硅将基底区域的多晶硅发射极接触和暴露的表面与形成为覆盖整个基极区域的聚合物厚度约为500-600埃的厚度分离。

4. 发明授权

US5552619A Capacitor coupled contactless imager with high resolution and wide dynamic range 失效
标题翻译：电容耦合非接触式成像仪具有高分辨率和宽动态范围
公开(公告)号：US5552619A
公开(公告)日：1996-09-03
申请号：US436181
申请日：1995-05-10
申请人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
发明人： Albert Bergemont , Carver A. Mead , Min-hwa Chi , Hosam Haggag
IPC分类号： H01L27/105 , H01L27/146 , H01L31/11 , H01L31/06
CPC分类号： H01L31/1105 , H01L27/105 , Y10S148/124
摘要： A capacitor coupled contactless imager structure and a method of manufacturing the structure results is a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface to the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the phototransistor. Silicon dioxide separates the poly1 emitter contact and exposed surfaces at the base region from a layer of poly2 about 3000-4000 .ANG. thick that partially covers the base region; the gates of the CMOS peripheral devices are also poly2. The poly2 over the base region serves as a base coupling capacitor and a row conductor for the imager structure. The thickness of the poly2 capacitor plate allows it to be doped utilizing conventional techniques and silicided to improve the RC constant.
摘要翻译：电容耦合非接触式成像器结构及其结构制造方法是一种光电晶体管，其结构包括形成在P型半导体材料中的N型集电极区域。在集电区域形成P型基极区域。形成与P型基极区域的表面接触的n掺杂多晶硅发射极触点，使得在基极区域中形成n +外延区域作为光电晶体管的发射极。二氧化硅将poly1发射极接触和暴露在基部区域的表面与部分覆盖基极区域的约3000-4000厚的poly2层分离; CMOS外围器件的栅极也是poly2。基极区域上的poly2用作成像器结构的基极耦合电容器和行导体。 poly2电容器板的厚度允许使用常规技术进行掺杂，并且硅化以改善RC常数。

5. 发明授权

US6088058A Capacitive coupled bipolar active pixel imager having overflow protection and electronic shutter 失效
标题翻译：具有溢流保护和电子快门的电容耦合双极有源像素成像器
公开(公告)号：US6088058A
公开(公告)日：2000-07-11
申请号：US865569
申请日：1997-05-29
申请人： Carver A. Mead , Tobi Delbruck , Min-hwa Chi
发明人： Carver A. Mead , Tobi Delbruck , Min-hwa Chi
IPC分类号： H04N5/353 , H04N5/359 , H04N5/369 , H04N5/374 , H04N3/14 , G03B7/00 , H04N5/335 , H04N9/083
CPC分类号： H04N5/3532 , H04N5/353 , H04N5/3591 , H04N5/3594 , H04N5/3741
摘要： An imaging array having overflow protection and electronic shuttering features is realized without an increase in pixel complexity. Overflow protection is provided by pulsing each row of the imager with a small overflow pulse during the sense amplifier reset phase. An electronic shutter is realized using a modified version of the pixel readout timing. The shutter provides sub-frame exposure by restricting the number of line-times a pixel is allowed to integrate. For a full-frame exposure, each pixel is read out once per frame; during readout of the other rows of the array, the pixel integrates. For subframe exposure, the pixel is continually reset, using a shutter pulse applied to the row lines during sense amplifier reset, until a certain number of rows (line-times) before it is to be read out. The pixel then is allowed to integrate until it is read out normally.
摘要翻译：实现了具有溢出保护和电子快门功能的成像阵列，而不增加像素复杂度。通过在感测放大器复位阶段期间使成像器的每行脉冲具有小的溢出脉冲来提供溢出保护。使用像素读出定时的修改版本来实现电子快门。快门通过限制允许像素集成的行数的次数来提供子帧曝光。对于全帧曝光，每个像素每帧读出一次; 在读出阵列的其他行期间，像素被整合。对于子帧曝光，使用在读出放大器复位期间施加到行线的快门脉冲，直到要读出之前的一定数量的行（行时间），像素被连续复位。然后允许像素整合，直到它被正常读出。

6. 发明授权

US06731397B1 Method for storing and retrieving digital image data from an imaging array 有权
标题翻译：用于从成像阵列存储和检索数字图像数据的方法
公开(公告)号：US06731397B1
公开(公告)日：2004-05-04
申请号：US09316731
申请日：1999-05-21
申请人： Richard B. Merrill , Richard F. Lyon , Carver A. Mead
发明人： Richard B. Merrill , Richard F. Lyon , Carver A. Mead
IPC分类号： G06K100
CPC分类号： H01L27/14647 , H04N5/3696 , H04N9/045
摘要： A method for storing digital information from an image sensor comprises the steps of providing an image sensor producing three-color output data at each of a plurality of pixel locations; providing a digital storage device coupled to the image sensor; sensing three-color digital output data from the image sensor; and storing said three-color output data as digital data in the digital storage device without performing any interpolation on the three-color output data. The data may be compressed prior to storage and expanded after retrieval from storage. In a preferred embodiment, the image sensor comprises a triple-junction active pixel sensor array.
摘要翻译：一种用于从图像传感器存储数字信息的方法包括以下步骤：在多个像素位置的每一个处提供产生三色输出数据的图像传感器; 提供耦合到所述图像传感器的数字存储设备; 从图像传感器感测三色数字输出数据; 并将所述三色输出数据作为数字数据存储在数字存储装置中，而不对三色输出数据进行任何插值。数据可以在存储之前被压缩，并在从存储器检索之后被扩展。在优选实施例中，图像传感器包括三结有源像素传感器阵列。

7. 发明授权

US6144581A pMOS EEPROM non-volatile data storage 有权
标题翻译： pMOS EEPROM非易失性数据存储
公开(公告)号：US6144581A
公开(公告)日：2000-11-07
申请号：US201327
申请日：1998-11-30
申请人： Christopher J. Diorio , Carver A. Mead
发明人： Christopher J. Diorio , Carver A. Mead
IPC分类号： G11C16/04
CPC分类号： G11C16/0416 , G11C16/10
摘要： A pMOS EEPROM cell includes a source, drain, channel, control gate and well contact. The device is a fully functional single element p-type floating gate MOSFET. A floating gate overlaps the well contact and completely surrounds the drain and source implants. The pMOS cell is written to by means of hot-electron injection, using an intrinsic feedback mechanism to write analog values. Hot electrons are generated in the channel by means of hole impact ionization at the transistor's drain. The pMOS cell is erased by Fowler-Nordheim tunneling. The tunneling voltage is applied only to the well to tunnel electrons from the floating gate. The well-source and well-drain junctions are protected from breakdown by means of guard rings.
摘要翻译： pMOS EEPROM单元包括源极，漏极，通道，控制栅极和阱接触。该器件是一个功能齐全的单元件p型浮栅MOSFET。浮动栅极与阱接触重叠，并完全围绕漏极和源植入。通过热电子注入将pMOS单元写入，使用内在反馈机制来写入模拟值。通过在晶体管漏极处的空穴冲击电离在通道中产生热电子。 Fowler-Nordheim隧道消除了pMOS细胞。隧道电压仅施加到阱以从浮动栅极隧道电子。井源井漏井路口通过护环免受破坏。

8. 发明授权

US06072885A Hearing aid device incorporating signal processing techniques 失效
标题翻译：含有信号处理技术的助听器
公开(公告)号：US06072885A
公开(公告)日：2000-06-06
申请号：US697412
申请日：1996-08-22
申请人： Thomas G. Stockham, Jr. , Douglas M. Chabries , Carver A. Mead
发明人： Thomas G. Stockham, Jr. , Douglas M. Chabries , Carver A. Mead
IPC分类号： H04R1/26 , H04R25/00
CPC分类号： H04R25/356 , H04R1/26 , H04R25/453
摘要： A hearing compensation system for the hearing impaired comprises an input transducer for converting acoustical information at an input to electrical signals at an output, an output transducer for converting electrical signals at an input to acoustical information at an output, a plurality of bandpass filters, each bandpass filter having an input connected to the output of said input transducer, a plurality of AGC circuits, each individual AGC circuit associated with a different one of the bandpass filters and having an input connected to the output of its associated bandpass filter and an output connected to the input of the output transducer. The bandpass filters and AGC circuits may be divided into two processing channels, one for low frequencies and one for high frequencies and may drive separate audio transducers, one configured for maximum efficiency at low frequencies and one configured for maximum efficiency at high frequencies.
摘要翻译：用于听力受损的听力补偿系统包括：输入变换器，用于将输入处的声学信息转换成输出端的电信号;输出换能器，用于将输入处的电信号转换成输出处的声学信息，多个带通滤波器，每个带通滤波器，具有连接到所述输入换能器的输出端的输入，多个AGC电路，每个单独的AGC电路与不同的带通滤波器相关联，并且具有连接到其相关带通滤波器的输出的输入端和连接的输出端到输出传感器的输入。带通滤波器和AGC电路可以分为两个处理通道，一个用于低频，一个用于高频，并且可以驱动单独的音频换能器，一个配置为在低频下实现最大效率，一个配置为在高频下实现最大效率。

9. 发明授权

US5825063A Three-terminal silicon synaptic device 失效
标题翻译：三端硅突触装置
公开(公告)号：US5825063A
公开(公告)日：1998-10-20
申请号：US690198
申请日：1996-07-26
申请人： Christopher J. Diorio , Paul E. Hasler , Bradley A. Minch , Carver A. Mead
发明人： Christopher J. Diorio , Paul E. Hasler , Bradley A. Minch , Carver A. Mead
IPC分类号： G11C27/00 , H01L29/788
CPC分类号： G11C27/005 , H01L29/7885
摘要： A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.
摘要翻译：提供具有时变传递函数的三端硅MOS晶体管，其可以同时作为单晶体管模拟学习装置和单晶体管非易失性模拟存储器工作。通过从N型MOS浮栅晶体管的完全绝缘的浮栅中添加或去除电子来实现时变传递函数。晶体管具有电容耦合到浮动栅极的控制栅极; 从该控制栅极的角度看，晶体管的传递函数被修改。电子通过Fowler-Nordheim隧道从浮动门去除。电子通过热电子注入添加到浮动栅极。

10. 发明授权

US5488204A Paintbrush stylus for capacitive touch sensor pad 失效
标题翻译：用于电容式触摸传感器垫的画笔触控笔
公开(公告)号：US5488204A
公开(公告)日：1996-01-30
申请号：US324438
申请日：1994-10-17
申请人： Carver A. Mead , Ralph Wolf , Timothy P. Allen
发明人： Carver A. Mead , Ralph Wolf , Timothy P. Allen
IPC分类号： G06F3/023 , G06F3/033 , G06F3/041 , G06F3/044 , G06F3/048 , G08C21/00
CPC分类号： G06F3/04855 , G06F3/041 , G06F3/044 , G06F3/0488 , G06F3/04883 , G06F3/04892 , G06K9/00335
摘要： A proximity sensor system includes a touch-sensor pad with a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed. A conductive paintbrush-type stylus is used to produce paint-like strokes on a display associated with the touch-sensor pad.
摘要翻译：接近传感器系统包括具有传感器矩阵阵列的触摸传感器焊盘，该传感器阵列在连接到传感器焊盘的水平和垂直导体上具有特征电容。电容根据物体或传感器矩阵的接近度而变化。由于物体的接近，矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。这些电压由电路处理以产生表示物体轮廓的质心的电信号，即其在X和Y尺寸中的位置。采用本构架中固有可用的降噪和背景设置技术。导电画笔型触笔用于在与触摸传感器垫相关联的显示器上产生油漆状笔触。

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