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1. 发明申请

US20090311625A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板的方法
公开(公告)号：US20090311625A1
公开(公告)日：2009-12-17
申请号：US12461807
申请日：2009-08-25
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

2. 发明申请

US20080227027A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板的方法
公开(公告)号：US20080227027A1
公开(公告)日：2008-09-18
申请号：US12081463
申请日：2008-04-16
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

3. 发明申请

US20050266346A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板
公开(公告)号：US20050266346A1
公开(公告)日：2005-12-01
申请号：US11196742
申请日：2005-08-04
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/11 , G03C1/492 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/09 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

4. 发明申请

US20070141514A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板的方法
公开(公告)号：US20070141514A1
公开(公告)日：2007-06-21
申请号：US11703790
申请日：2007-02-08
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazfumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazfumi Sato
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

5. 发明申请

US20060210916A1 Positive photoresist composition and method of forming resist pattern 有权
公开(公告)号：US20060210916A1
公开(公告)日：2006-09-21
申请号：US10566425
申请日：2004-09-17
申请人： Akiyoshi Yamazaki , Kazuo Tani , Naoto Motoike , Satoshi Maemori , Sachiko Yoshizawa
发明人： Akiyoshi Yamazaki , Kazuo Tani , Naoto Motoike , Satoshi Maemori , Sachiko Yoshizawa
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid generated from the component (B).

6. 发明授权

US07629105B2 Positive photoresist composition and method of forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07629105B2
公开(公告)日：2009-12-08
申请号：US10566425
申请日：2004-09-17
申请人： Akiyoshi Yamazaki , Kazuo Tani , Naoto Motoike , Satoshi Maemori , Sachiko Yoshizawa
发明人： Akiyoshi Yamazaki , Kazuo Tani , Naoto Motoike , Satoshi Maemori , Sachiko Yoshizawa
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid generated from the component (B).
摘要翻译：一种正性抗蚀剂组合物，其包含含有酸解离的溶解抑制基团并在酸的作用下表现出增加的碱溶解性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中所述树脂组分（A）是含有由羟基苯乙烯衍生的第一结构单元（a1）和衍生自具有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2）的共聚物（A1），其中一部分羟基的结构单元（a1）和结构单元（a2）的醇羟基已经被酸解离的溶解抑制基团保护; 并且酸产生剂组分（B）包括重氮甲烷基酸生成剂和鎓盐型酸发生剂; 或者组合物还含有含有至少一个酸解离的溶解抑制基团并在由组分（B）产生的酸的作用下产生有机羧酸的化合物。

7. 发明授权

US6159652A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6159652A
公开(公告)日：2000-12-12
申请号：US20408
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B）酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代式（I）：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示碳原子数1〜4的低级烷基。和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧基 - 羰基氧基取代。该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

8. 发明授权

US5908730A Chemical-sensitization photoresist composition 失效
标题翻译：化学增感光刻胶组合物
公开(公告)号：US5908730A
公开(公告)日：1999-06-01
申请号：US898320
申请日：1997-07-22
申请人： Kazuyuki Nitta , Kazufumi Sato , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazuyuki Nitta , Kazufumi Sato , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039
摘要： Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photosensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formulaR.sup.1 --SO.sub.2 --C(.dbd.N.sub.2)--SO.sub.2 --R.sup.2,in which R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group substituted on the cyclic nucleus by an acid-dissociable group such as a tert-butoxycarbonyl and acetal groups.
摘要翻译：提出了一种正性或负性的化学增感光致抗蚀剂组合物，其在图案化抗蚀剂层的图案的对比度和分辨率，光敏性和横截面轮廓方面以及关于通过图案形成的潜像的稳定性方面具有优势在曝光前烘烤处理下曝光。该组合物包含：（A）100重量份成膜树脂成分，其通过与酸的相互作用而引起在碱性水溶液中的溶解度的改变，即增加或减少; 和（B）0.5〜20重量份的辐射敏感性酸产生剂，其为通式R 1 -SO 2 -C（= N 2）-SO 2 -R 2表示的重氮甲烷化合物，其中R 1和R 2为各自独立地是通过酸解离基团如叔丁氧基羰基和缩醛基在环状核上取代的一价环状基团。

9. 发明授权

US5955240A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US5955240A
公开(公告)日：1999-09-21
申请号：US738784
申请日：1996-10-29
申请人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (M.sub.w /M.sub.n) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译：公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（C）有机羧酸化合物和（ D）胺，其中所述树脂组分（A）是包含（a）重均分子量为8,000至25,000的聚羟基苯乙烯和分子量分布（Mw / Mn）为1.5以下的混合物，其中， 10〜60mol％的羟基已被通式（I）的残基取代：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示低级烷基具有1至4个碳原子; 和（b）重均分子量为8,000〜25,000，分子量分布（Mw / Mn）为1.5以下的聚羟基苯乙烯，其中10〜60摩尔％的羟基已被叔丁氧羰基氧基团体该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于底物。该组合物可用于在制造超LSI时形成精细图案。

10. 发明授权

US5874195A Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US5874195A
公开(公告)日：1999-02-23
申请号：US966791
申请日：1997-11-10
申请人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
发明人： Kazufumi Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Yoshika Sakai , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , G03F7/30
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Proposed is a novel positive-working photoresist composition of the chemical sensitization type capable of giving a finely patterned resist layer having an excellent cross sectional profile even for a discretely isolated pattern with high sensitivity and high resolution. The composition comprises, besides (a) a compound generating an acid by the irradiation with actinic rays, (b) a resinous ingredient capable of being imparted with increased solubility in an alkaline developer solution in the presence of an acid and (c) an organic solvent which is a ketone, ether or ester as the basic ingredients of the chemical sensitization type photoresist compositions, (d) an N,N-dialkyl carboxylic acid amide such as N,N-dimethyl formamide and N,N-dimethyl acetamide in a specified proportion relative to the component (b).
摘要翻译：提出了一种新型的化学增感型正性光致抗蚀剂组合物，即使对于具有高灵敏度和高分辨率的离散隔离图案，也能够给出具有优异横截面轮廓的精细图案化的抗蚀剂层。除了（a）通过光化射线照射产生酸的化合物外，组合物还包含（b）能够在酸存在下赋予碱性显影剂溶液中增加的溶解性的树脂成分，和（c）有机作为化学增感型光致抗蚀剂组合物的基本成分的酮，醚或酯的溶剂，（d）N，N-二甲基甲酰胺如N，N-二甲基甲酰胺和N，N-二甲基乙酰胺相对于组分（b）的指定比例。

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