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1. 发明授权

US5266244A Method of forming a thin electroconductive film 失效
标题翻译：形成薄导电膜的方法
公开(公告)号：US5266244A
公开(公告)日：1993-11-30
申请号：US867202
申请日：1992-06-30
申请人： Akira Yabe , Hiroyuki Niino , Masashi Shimoyama
发明人： Akira Yabe , Hiroyuki Niino , Masashi Shimoyama
IPC分类号： B01J19/12 , B23K26/00 , B29C35/08 , B29C59/16 , B29C70/88 , C08J5/18 , C08J7/00 , H01B1/12 , H01B13/00
CPC分类号： B29C70/882 , B01J19/121 , B01J19/122 , B29C59/16 , H01B1/125 , B29C2035/0838 , B29K2027/06 , B29K2027/08 , B29K2995/0005
摘要： A thin electroconductive film is formed by irradiating a shaped article of chlorinated vinyl polymer with a pulsive light having a pulse duration of not greater than 100 nsec., a fluence of above about 15 mJ/cm.sup.2 /pulse and below that at which the polymer is subject to ablation, a laser wavelength of from about 190 to about 300 nm, and repetition frequency of above about 1 Hz and below that at which the polymer is subject to deformation and/or decomposition by a regenerative function of irradiation, under vacuum or in an oxygen-free atmosphere, thereby irradiating the article with total photon numbers of at least 1.times.10.sup.18 /cm.sup.2 without causing photocrosslinking, oxidation or cleavage of the backbone chain. The invention does not use materials other than the starting polymer such as solvents or strong bases that can contaminate the thin film during a dehydrochlorination, so there is no need to remove solvents after reaction and no residual salts will be formed in the dehydrochlorination.
摘要翻译： PCT No.PCT / JP91 / 00333 Sec。 371日期：1992年6月30日 102（e）日期1992年6月30日PCT 1991年3月12日PCT PCT。公开号WO91 / 13680 PCT 日期：1991年9月19日。薄导电膜通过用脉冲持续时间不超过100nsec的脉冲光照射氯化乙烯基聚合物的成形制品，高于约15mJ / cm 2 /脉冲的注量和聚合物可能在其下进行烧蚀，激光波长为约190至约300nm，重复频率高于约1Hz，低于聚合物通过再生功能变形和/或分解的频率的照射，在真空下或在无氧气氛中，从而以不小于1×10 18 / cm 2的总光子数照射物品，而不引起主链的光交联，氧化或裂解。本发明不使用起始聚合物以外的材料，例如在脱氯化氢中可能污染薄膜的溶剂或强碱，因此在反应后不需要除去溶剂，在脱氯化氢中不会形成残留的盐。

2. 发明授权

US5723029A Photo-electric chemical apparatus using carbon cluster electrode 失效
标题翻译：使用碳簇电极的光电化学设备
公开(公告)号：US5723029A
公开(公告)日：1998-03-03
申请号：US825396
申请日：1997-03-28
申请人： Masashi Shimoyama
发明人： Masashi Shimoyama
IPC分类号： C25B9/00 , C25B1/00 , C25B9/06 , C25B11/08 , H01L21/288 , H01M14/00 , H01L31/0256
CPC分类号： C25B1/003 , Y02E60/368 , Y10S136/291
摘要： A photo-electric chemical apparatus comprising an electrolyte, a first electrode having an n-type semiconductor member disposed to be in touch with the electrolyte and a second electrode having a carbon cluster member disposed to be in touch with the electrolyte. The first and second electrodes are short-circuited and irradiated with a light beam to thereby generate oxygen and hydrogen. The first electrode is a laminated member consisting of a light transmitting glass, a transparent conducting layer and an n-type semiconductor layer. The second electrode is a laminated member consisting of a light transmitting glass, a transparent conducting layer and a carbon cluster thin film.
摘要翻译：一种光电化学设备，包括电解质，具有设置为与电解质接触的n型半导体部件的第一电极和具有设置成与电解质接触的碳簇部件的第二电极。第一和第二电极短路并用光束照射，从而产生氧气和氢气。第一电极是由透光玻璃，透明导电层和n型半导体层构成的层叠构件。第二电极是由透光玻璃，透明导电层和碳簇薄膜构成的层叠体。

3. 发明授权

US09376758B2 Electroplating method 有权
标题翻译：电镀法
公开(公告)号：US09376758B2
公开(公告)日：2016-06-28
申请号：US13311020
申请日：2011-12-05
申请人： Shingo Yasuda , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
发明人： Shingo Yasuda , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
IPC分类号： C25D5/18 , C25D7/12
CPC分类号： C25D5/18 , C25D7/123
摘要： An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.
摘要翻译：电镀方法可以以自下而上的方式可靠且有效地将电镀金属填充到深高纵横比的通孔中，而不会在电镀金属中产生缺陷。电镀方法包括：在基板的表面上设置阳极，将具有在表面中形成的通孔的基板和阳极浸入电镀槽中的电镀液中; 并以这样的方式间歇地通过基板和阳极之间的恒定电流值的电镀电流，使得电镀电流的供应和停止重复，并且提供电镀电流的电流供应时间的比例随着电镀的进行而增加，从而将电镀金属填充到通孔中。

4. 发明授权

US5276761A Hollow waveguide for ultraviolet wavelength region laser beams 失效
标题翻译：用于紫外波长区域激光束的空心波导
公开(公告)号：US5276761A
公开(公告)日：1994-01-04
申请号：US759598
申请日：1991-09-16
申请人： Masashi Shimoyama , Kazuo Kinoshita , Naoki Tsuchiya , Tohru Fukatsu
发明人： Masashi Shimoyama , Kazuo Kinoshita , Naoki Tsuchiya , Tohru Fukatsu
IPC分类号： G02B6/032 , G02B6/10 , G02B6/42 , G02B6/20
CPC分类号： G02B6/032 , G02B6/102 , G02B6/4296
摘要： A hollow waveguide for ultraviolet wavelength region laser beams incorporates a glass tube composed of a glass material exhibiting a high transmissivity with respect to ultraviolet rays and an excellent environment resistant property, and a metal film exhibiting a high reflectivity with respect to the ultraviolet rays and formed outside the glass tube. The glass tube serves as an inner surface of the waveguide. The ultraviolet wavelength region laser beams are transmitted while being reflected by the inner surface of the glass tube and by an interface between the glass tube and the metal film.
摘要翻译：用于紫外线波长区域激光束的中空波导管包括由相对于紫外线表现出高透射率的玻璃材料和优异的耐环境性的玻璃管以及相对于紫外线呈现高反射率的金属膜，并形成玻璃管外面。玻璃管用作波导的内表面。紫外线波长区域的激光束被玻璃管的内表面和玻璃管与金属膜之间的界面反射而被透射。

5. 发明申请

US20060219986A1 Mixed conductive carbon and electrode 审中-公开
标题翻译：混合导电碳和电极
公开(公告)号：US20060219986A1
公开(公告)日：2006-10-05
申请号：US10546200
申请日：2004-02-24
申请人： Hiroshi Yokota , Masashi Shimoyama , Eiichi Akiyama , Kazuyoshi Takeda
发明人： Hiroshi Yokota , Masashi Shimoyama , Eiichi Akiyama , Kazuyoshi Takeda
IPC分类号： H01B1/24 , H01M4/88 , H01M4/96
CPC分类号： H01M4/583 , D01F11/10 , H01M4/0433 , H01M4/625 , H01M4/96
摘要： An electrode having both of electronic conductivity and ionic conductivity is provided. An electrode provided with a mixed conductive carbon having electronic conductivity and ionic conductivity, the carbon containing an ion-dissociative group on the surface thereof. The use of a platelet-type or herringbone-type carbon fiber as the carbon material enables the introduction of ion-dissociative groups at a high density with continuity, whereby ion paths are effectively formed and an excellent ionic conductivity can be imparted, in addition to the electron conductivity inherent in the carbon fiber.
摘要翻译：提供具有电子导电性和离子电导率两者的电极。具有电子导电性和离子电导率的混合导电碳的电极，其表面上含有离子解离基团。使用血小板型或人字型碳纤维作为碳材料，能够以高密度引入离子解离基团连续性，从而有效地形成离子路径，并且可以赋予优异的离子导电性，除了碳纤维中固有的电子传导性。

6. 发明授权

US07012333B2 Lead free bump and method of forming the same 有权
标题翻译：无铅焊点及其形成方法
公开(公告)号：US07012333B2
公开(公告)日：2006-03-14
申请号：US10743757
申请日：2003-12-24
申请人： Masashi Shimoyama , Hiroshi Yokota , Rei Kiumi , Fumio Kuriyama , Nobutoshi Saito
发明人： Masashi Shimoyama , Hiroshi Yokota , Rei Kiumi , Fumio Kuriyama , Nobutoshi Saito
IPC分类号： H01L29/40
CPC分类号： H01L24/12 , C25D3/60 , C25D5/505 , C25D21/14 , H01L21/2885 , H01L21/4853 , H01L23/49816 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/11462 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01082 , H01L2924/01092 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H05K3/3436 , H05K3/3463 , H01L2924/00014
摘要： The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn—Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn—Ag alloy film having a lower Ag content than that of an Sn—Ag eutectic composition by plating and reflowing the plated alloy film.
摘要翻译：本发明涉及通过回流具有调节的Ag含量的Sn-Ag焊料合金的镀膜获得的空隙形成的无铅凸块，以及形成无铅凸块的方法。本发明的无铅凸点通过电镀和回流镀合金膜而形成具有比Sn-Ag共晶组合物低的Ag含量的Sn-Ag合金膜。

7. 发明申请

US20050009340A1 Method and apparatus for forming capping film 审中-公开
标题翻译：形成封盖膜的方法和装置
公开(公告)号：US20050009340A1
公开(公告)日：2005-01-13
申请号：US10885108
申请日：2004-07-07
申请人： Yasuhiko Saijo , Masashi Shimoyama , Hiroshi Yokota , Akihiko Tashiro , Xinming Wang , Daisuke Takagi
发明人： Yasuhiko Saijo , Masashi Shimoyama , Hiroshi Yokota , Akihiko Tashiro , Xinming Wang , Daisuke Takagi
IPC分类号： C23C18/18 , C23C18/16 , C23C18/30 , C23C18/31 , C23C18/50 , H01L21/00 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76874 , C23C18/1855 , C23C18/1893 , H01L21/288 , H01L21/76849
摘要： A capping film serving as an interconnect protective film formed on a surface of interconnect metal on a semiconductor substrate is formed after forming a catalyst layer for electroless plating under low oxygen concentration condition. A method for forming a capping film for protecting a surface of interconnect metal includes preparing a metal catalyst solution containing a metal element nobler than interconnect metal and having dissolved oxygen concentration of 7 ppm or less, bringing said metal catalyst solution into contact with a surface of interconnect metal to form a metal catalyst layer on the surface of the interconnect metal, and performing electroless plating to form a capping film on the surface of the interconnect metal.
摘要翻译：在低氧浓度条件下形成用于化学镀的催化剂层之后，形成用作半导体衬底上的互连金属表面上的互连保护膜的覆盖膜。形成用于保护互连金属的表面的封盖膜的方法包括制备含有比互连金属更高的金属元素并且具有7ppm或更低的溶解氧浓度的金属催化剂溶液，使所述金属催化剂溶液与互连金属，以在互连金属的表面上形成金属催化剂层，并进行化学镀以在互连金属的表面上形成覆盖膜。

8. 发明申请

US20120152749A1 ELECTROPLATING METHOD 有权
标题翻译：电镀方法
公开(公告)号：US20120152749A1
公开(公告)日：2012-06-21
申请号：US13311020
申请日：2011-12-05
申请人： Shingo YASUDA , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
发明人： Shingo YASUDA , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
IPC分类号： C25D5/02 , C25D5/00
CPC分类号： C25D5/18 , C25D7/123
摘要： An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.
摘要翻译：电镀方法可以以自下而上的方式可靠且有效地将电镀金属填充到深高纵横比的通孔中，而不会在电镀金属中产生缺陷。电镀方法包括：在基板的表面上设置阳极，将具有在表面中形成的通孔的基板和阳极浸入电镀槽中的电镀液中; 并以这样的方式间歇地通过基板和阳极之间的恒定电流值的电镀电流，使得电镀电流的供应和停止重复，并且提供电镀电流的电流供应时间的比例随着电镀的进行而增加，从而将电镀金属填充到通孔中。

9. 发明申请

US20050279640A1 Method of forming a lead-free bump and a plating apparatus therefor 审中-公开
标题翻译：无铅凸块的形成方法及其电镀装置
公开(公告)号：US20050279640A1
公开(公告)日：2005-12-22
申请号：US11192013
申请日：2005-07-29
申请人： Masashi Shimoyama , Hiroshi Yokota , Rei Kiumi , Fumio Kuriyama , Nobutoshi Saito
发明人： Masashi Shimoyama , Hiroshi Yokota , Rei Kiumi , Fumio Kuriyama , Nobutoshi Saito
IPC分类号： C25D3/60 , C25D5/50 , C25D21/14 , H01L21/288 , H01L21/48 , H01L21/60 , H01L23/485 , H01L23/498 , H05K3/34 , C25D17/00
CPC分类号： H01L24/12 , C25D3/60 , C25D5/505 , C25D21/14 , H01L21/2885 , H01L21/4853 , H01L23/49816 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/11462 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01082 , H01L2924/01092 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H05K3/3436 , H05K3/3463 , H01L2924/00014
摘要： The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn—Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn—Ag alloy film having a lower Ag content than that of an Sn—Ag eutectic composition by plating and reflowing the plated alloy film.
摘要翻译：本发明涉及通过回流具有调节的Ag含量的Sn-Ag焊料合金的镀膜获得的空隙形成的无铅凸块，以及形成无铅凸块的方法。本发明的无铅凸点通过电镀和回流镀合金膜而形成具有比Sn-Ag共晶组合物低的Ag含量的Sn-Ag合金膜。

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