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1. 发明授权

US5329141A Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US5329141A
公开(公告)日：1994-07-12
申请号：US968973
申请日：1992-10-30
申请人： Akira Suzuki , Yoshihisa Fujii , Hajime Saito , Katsuki Furukawa , Yoshimitsu Tajima
发明人： Akira Suzuki , Yoshihisa Fujii , Hajime Saito , Katsuki Furukawa , Yoshimitsu Tajima
IPC分类号： H01L21/205 , H01L33/20 , H01L33/34 , H01L33/40 , H01L33/00
CPC分类号： H01L33/34 , H01L33/0054
摘要： A light emitting diode of silicon carbide having a p-n junction comprising an n-type layer doped with donor impurities, a first p-type layer doped with acceptor impurities, and a second p-type layer doped with acceptor impurities and donor impurities. The first p-type layer has a thickness less than the diffusion length of electrons having flowed from the n-type layer. In this way, the first p-type layer effects light emission related to the acceptor impurities which recombine with the electrons having flowed from the n-type layer, and the second p-type layer effects light emission by donor-acceptor pairs which recombine with the electrons having flowed from the n-type layer.
摘要翻译：一种具有p-n结的碳化硅的发光二极管，其包含掺杂有供体杂质的n型层，掺杂有受主杂质的第一p型层和掺杂有受主杂质和供体杂质的第二p型层。第一p型层的厚度小于从n型层流出的电子的扩散长度。以这种方式，第一p型层实现与从n型层流出的电子重新结合的受主杂质相关的光发射，第二p型层通过供体 - 受体对实现与由电子从n型层流出。

2. 发明授权

US5288365A Method for growing a silicon carbide single crystal 失效
标题翻译：生长碳化硅单晶的方法
公开(公告)号：US5288365A
公开(公告)日：1994-02-22
申请号：US855376
申请日：1992-03-20
申请人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
发明人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
IPC分类号： C30B23/08 , C30B23/02 , C30B29/36 , H01L21/203 , C30B25/00
CPC分类号： C30B23/02 , C30B23/002 , C30B29/36 , Y10S117/902 , Y10S438/931
摘要： A method for growing a silicon carbide single crystal on a seed crystal using a molecular beam source in vacuo by means of a molecular beam epitaxy, wherein a material in the molecular beam source is silicon carbide. A silicon molecular beam source and/or an impurity molecular beam source for doping may be further used. Temperatures of the silicon carbide molecular beam source, the silicon molecular beam source, the impurity molecular beam source and the seed crystal are independently controlled. Vapor compositions are controlled by the silicon carbide molecular beam source, the silicon molecular beam source and the impurity molecular beam source.
摘要翻译：使用分子束源在分子束源上通过分子束外延在晶种上生长碳化硅单晶的方法，其中分子束源中的材料是碳化硅。可以进一步使用用于掺杂的硅分子束源和/或杂质分子束源。独立控制碳化硅分子束源，硅分子束源，杂质分子束源和晶种的温度。蒸气成分由碳化硅分子束源，硅分子束源和杂质分子束源控制。

3. 发明授权

US5433167A Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal 失效
标题翻译：使用晶种的升华重结晶法生产碳化硅单晶的方法
公开(公告)号：US5433167A
公开(公告)日：1995-07-18
申请号：US156472
申请日：1993-11-23
申请人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
发明人： Katsuki Furukawa , Yoshimitsu Tajima , Akira Suzuki
IPC分类号： C30B23/02 , C30B29/36
CPC分类号： C30B23/02 , C30B23/002 , C30B29/36
摘要： There is provided a method of producing a high-quality n-type, 6H silicon carbide single crystal with good reproducibility. A silicon carbide single crystal substrate having a growth orientation of , as a seed crystal, is mounted to an inner surface of a cover of a graphite crucible. A source material includes a high-purity silicon carbide powder having an impurity proportion of not more than 1 ppm and an aluminum powder of 50 ppm relative to the silicon carbide powder. The source material is loaded into the graphite crucible. The graphite crucible is closed with a seed crystal-mounted cover placed in a double quartz tube. Ar gas and N.sub.2 gas are caused to flow in the double quartz tube. Temperature of the silicon carbide powder and aluminum powder is controlled to 2300.degree. C., and temperature of the silicon carbide single crystal substrate to 2200.degree. C.; and interior of the double quartz tube is controlled to 30 torr. Silicon carbide single crystal growth is effected on the seed crystal under these conditions. A high-quality n-type, 6H silicon carbide single crystal is thus obtained which has a uniform crystal structure with little defect, if any, throughout its structure, from the substrate surface to the outermost grown surface, and has a specific resistance of 0.5 .OMEGA.cm.
摘要翻译：提供了一种制造高品质的n型，6H碳化硅单晶，具有良好的再现性的方法。具有生长方向<0001>的碳化硅单晶衬底作为晶种安装在石墨坩埚的盖的内表面上。源材料包括杂质比例不大于1ppm的高纯度碳化硅粉末和相对于碳化硅粉末为50ppm的铝粉末。将原料装入石墨坩埚中。石墨坩埚用放置在双重石英管中的晶种安装的盖封闭。使Ar气和N2气在双重石英管中流动。将碳化硅粉末和铝粉末的温度控制在2300℃，将碳化硅单晶基板的温度控制在2200℃。并将双重石英管的内部控制在30乇。在这些条件下，对晶种进行碳化硅单晶生长。因此获得了高质量的n型6H碳化硅单晶，其具有从基材表面到最外面的生长表面的整个结构中几乎没有缺陷（如果有的话）的均匀晶体结构，并且具有0.5的电阻率欧米茄厘米

4. 发明申请

US20120077408A1 DEVICE AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE, AND DEVICE AND METHOD FOR MANUFACTURING DISPLAY PANEL 有权
标题翻译：用于制造活性矩阵基板的装置和方法，以及用于制造显示面板的装置和方法
公开(公告)号：US20120077408A1
公开(公告)日：2012-03-29
申请号：US13322826
申请日：2010-02-16
申请人： Yoshimitsu Tajima
发明人： Yoshimitsu Tajima
IPC分类号： H01J9/50
CPC分类号： G09G3/006 , G01R31/025 , G02F1/1303 , G02F1/136259 , G09G3/3611 , G09G2360/147
摘要： A device for manufacturing an active matrix substrate including a plurality of pixels arranged in a matrix, in which a short-circuit defect in the active matrix substrate is detected and repaired, includes a stage (30a) configured to place a test substrate (19) which will become the active matrix substrate, a defective pixel detector (40a) configured to input a test signal to the test substrate (19) placed on the stage (30a), and electrically detect coordinates of a defective pixel in which a short-circuit defect has occurred, and a defect position identifier (50) configured to input the test signal to the test substrate (19) placed on the stage (30a) to cause the defective pixel detected by the defective pixel detector (40a) to generate heat, and sense the heat generation in the defective pixel using far-infrared thermography, thereby identifying a position of the short-circuit defect in the defective pixel.
摘要翻译：一种用于制造有源矩阵基板的装置，包括：检测和修复有源矩阵基板中的短路缺陷的阵列中排列的多个像素的有源矩阵基板，包括配置成放置测试基板（19）的台（30a）其将成为有源矩阵基板，被配置为将测试信号输入到放置在载物台（30a）上的测试基板（19）的缺陷像素检测器（40a），并且电检测其中短路的缺陷像素的坐标发生缺陷，以及缺陷位置识别器（50），被配置为将测试信号输入到放置在台（30a）上的测试基板（19），以使由缺陷像素检测器（40a）检测到的缺陷像素产生热量，并使用远红外热像仪感测有缺陷像素中的发热，从而识别缺陷像素中的短路缺陷的位置。

5. 发明授权

US06297520B1 Active matrix substrate and correcting method of structural defect thereof 有权
标题翻译：有源矩阵基板及其结构缺陷的校正方法
公开(公告)号：US06297520B1
公开(公告)日：2001-10-02
申请号：US09377830
申请日：1999-08-20
申请人： Masumi Kubo , Toshihiro Yamashita , Yoshimitsu Tajima
发明人： Masumi Kubo , Toshihiro Yamashita , Yoshimitsu Tajima
IPC分类号： H01L2904
CPC分类号： H01L27/1244 , G02F1/1362 , G02F1/136259 , H01L27/1214
摘要： In an active matrix substrate having thereon a matrix of pixels each composed of a pair of a TFT and a pixel electrode, when the shorting of the pixel electrodes in adjacent pixels occurs, an electrical connection between the pixel electrode and drain electrode in the TFT of a matching pair in either of the shorted pixel electrodes is cut. For example, when the shorting of two adjacent pixels occurs, the pixel electrodes in both the pixels are driven by the TFT in the non-cut pixel. This arrangement makes it possible to make a display defect resulted from the shorting of adjacent pixels on the active matrix substrate less noticeable, and hence to upgrade display quality.
摘要翻译：在其上具有由一对TFT和像素电极构成的像素矩阵的有源矩阵基板中，当相邻像素中的像素电极发生短路时，TFT中的像素电极和漏电极之间的电连接在任一个短路像素电极中的匹配对被切割。例如，当发生两个相邻像素的短路时，两个像素中的像素电极由非切割像素中的TFT驱动。这种布置使得可以使由于有源矩阵基板上的相邻像素的短路而导致的显示缺陷不太明显，并且因此提高显示质量。

6. 发明授权

US08879040B2 Active matrix substrate and display device 有权
标题翻译：有源矩阵基板和显示装置
公开(公告)号：US08879040B2
公开(公告)日：2014-11-04
申请号：US13700280
申请日：2011-04-15
申请人： Yoshimitsu Tajima
发明人： Yoshimitsu Tajima
IPC分类号： G02F1/1345 , G02F1/1362
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136204
摘要： Disclosed is an active matrix substrate (1) including thereon: a plurality of signal lines (2); a plurality of scan lines (3) that intersect the signal lines (2); switching elements (4) disposed near intersections of the signal lines (2) and the scan lines (3); a plurality of input terminals (7) for inputting signals to the signal lines (2) and scan lines (3); and short-circuit wiring (8) disposed in an outer area with respect to the input terminals (7), where the short-circuit wiring (8) includes a trunk wiring line (8a) and a plurality of branch wiring lines (8b) that branch off from the trunk wiring line (8a) and that are connected to the respective input terminals (7), and a plurality of separator sections (9) are provided on the short-circuit wiring (8). The separator sections (9) electrically isolate the individual input terminals (7) and the trunk wiring line (8a) from each other.
摘要翻译：公开了一种有源矩阵基板（1），包括：多个信号线（2）; 与信号线（2）相交的多条扫描线（3）; 设置在信号线（2）和扫描线（3）的交叉点附近的开关元件（4）; 用于向信号线（2）和扫描线（3）输入信号的多个输入端（7）; 和相对于输入端子（7）设置在外部区域中的短路布线（8），其中短路布线（8）包括主干布线（8a）和多个分支布线（8b）从所述中继线布线（8a）分支并且连接到各个输入端子（7），并且在所述短路布线（8）上设置有多个隔板部分（9）。分离器部分（9）将各个输入端子（7）和干线布线（8a）彼此电隔离。

7. 发明授权

US4931240A Method for the production of a carbon electrode 失效
标题翻译：生产碳电极的方法
公开(公告)号：US4931240A
公开(公告)日：1990-06-05
申请号：US245772
申请日：1988-09-19
申请人： Yoshimitsu Tajima , Motoo Mohri
发明人： Yoshimitsu Tajima , Motoo Mohri
IPC分类号： C23C16/26 , H01M4/1393 , H01M4/62 , H01M4/96
CPC分类号： H01M4/583 , C23C16/26 , H01M4/0428 , H01M4/1393 , H01M4/587 , H01M4/96
摘要： A method for the production of a carbon electrode includes directly depositing a carbon material on an electroconductive and flexible electrode substrate by chemical vapor deposition using gaseous hydrocarbons as a starting material, filling the carbon material directly deposited on the electrode substrate with a charge carrier material capable of being reversibly intercalcated therein and deintercalated therefrom, and compressing the electrode substrate filled with the charge carrier material, resulting in a thin plate-shaped carbon electrode.

8. 发明授权

US4835075A Secondary battery using nonaqueous electrolytes 失效
标题翻译：二次电池使用非水电解质
公开(公告)号：US4835075A
公开(公告)日：1989-05-30
申请号：US119134
申请日：1987-11-10
申请人： Yoshimitsu Tajima , Motoo Mohri , Hideaki Tanaka
发明人： Yoshimitsu Tajima , Motoo Mohri , Hideaki Tanaka
IPC分类号： C01B31/02 , H01M4/587 , H01M4/96 , H01M10/05 , H01M10/052 , H01M10/054
CPC分类号： H01M10/05 , H01M4/587 , H01M4/96
摘要： A secondary battery using nonaqueous electrolytes that contain a light metal as an active material, and comprising an anode, a cathode and a separator that electrically separates the anode from the cathode, wherein said anode comprises a heat-resistant porous support and a carbon material deposited on said porous support, said carbon material having the following physico-chemical properties: The mean interlayer separation of said carbon active material is in the range of 0.337 to 0.355 nm; the ratio of the Raman intensity of 1360 cm.sup.-1 to that of 1580 cm.sup.-1 with regard to the argon laser Raman spectra of said carbon material is in the range of 0.4 to 1.0; and said carbon material is mainly composed of a carbon having a six-membered ring structure with flat networks and having a selective orientation.
摘要翻译：一种二次电池，其使用含有轻金属作为活性材料的非水电解质，并且包括将阳极与阴极电分离的阳极，阴极和隔板，其中所述阳极包括耐热多孔载体和沉积的碳材料在所述多孔载体上，所述碳材料具有以下物理化学性质：所述碳活性材料的平均层间分离在0.337至0.355nm的范围内; 相对于所述碳材料的氩激光拉曼光谱，1360cm -1的拉曼强度与1580cm -1的拉曼强度的比在0.4〜1.0的范围内; 并且所述碳材料主要由具有平坦网络并具有选择性取向的六元环结构的碳组成。

9. 发明授权

US08439717B2 Device and method for manufacturing active matrix substrate, and device and method for manufacturing display panel 有权
标题翻译：用于制造有源矩阵基板的装置和方法，以及用于制造显示面板的装置和方法
公开(公告)号：US08439717B2
公开(公告)日：2013-05-14
申请号：US13322826
申请日：2010-02-16
申请人： Yoshimitsu Tajima
发明人： Yoshimitsu Tajima
IPC分类号： H01J9/50
CPC分类号： G09G3/006 , G01R31/025 , G02F1/1303 , G02F1/136259 , G09G3/3611 , G09G2360/147
摘要： A device for manufacturing an active matrix substrate including a plurality of pixels arranged in a matrix, in which a short-circuit defect in the active matrix substrate is detected and repaired, includes a stage (30a) configured to place a test substrate (19) which will become the active matrix substrate, a defective pixel detector (40a) configured to input a test signal to the test substrate (19) placed on the stage (30a), and electrically detect coordinates of a defective pixel in which a short-circuit defect has occurred, and a defect position identifier (50) configured to input the test signal to the test substrate (19) placed on the stage (30a) to cause the defective pixel detected by the defective pixel detector (40a) to generate heat, and sense the heat generation in the defective pixel using far-infrared thermography, thereby identifying a position of the short-circuit defect in the defective pixel.
摘要翻译：一种用于制造有源矩阵基板的装置，包括：检测和修复有源矩阵基板中的短路缺陷的阵列中排列的多个像素的有源矩阵基板，包括配置成放置测试基板（19）的台（30a）其将成为有源矩阵基板，被配置为将测试信号输入到放置在载物台（30a）上的测试基板（19）的缺陷像素检测器（40a），并且电检测其中短路的缺陷像素的坐标发生缺陷，以及缺陷位置识别器（50），被配置为将测试信号输入到放置在台（30a）上的测试基板（19），以使由缺陷像素检测器（40a）检测到的缺陷像素产生热量，并使用远红外热像仪感测有缺陷像素中的发热，从而识别缺陷像素中的短路缺陷的位置。

10. 发明申请

US20130077007A1 ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：主动矩阵基板和显示设备
公开(公告)号：US20130077007A1
公开(公告)日：2013-03-28
申请号：US13700280
申请日：2011-04-15
申请人： Yoshimitsu Tajima
发明人： Yoshimitsu Tajima
IPC分类号： G02F1/1362
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/13458 , G02F1/136204
摘要： Disclosed is an active matrix substrate (1) including thereon: a plurality of signal lines (2); a plurality of scan lines (3) that intersect the signal lines (2); switching elements (4) disposed near intersections of the signal lines (2) and the scan lines (3); a plurality of input terminals (7) for inputting signals to the signal lines (2) and scan lines (3); and short-circuit wiring (8) disposed in an outer area with respect to the input terminals (7), where the short-circuit wiring (8) includes a trunk wiring line (8a) and a plurality of branch wiring lines (8b) that branch off from the trunk wiring line (8a) and that are connected to the respective input terminals (7), and a plurality of separator sections (9) are provided on the short-circuit wiring (8). The separator sections (9) electrically isolate the individual input terminals (7) and the trunk wiring line (8a) from each other.
摘要翻译：公开了一种有源矩阵基板（1），包括：多个信号线（2）; 与信号线（2）相交的多条扫描线（3）; 设置在信号线（2）和扫描线（3）的交叉点附近的开关元件（4）; 用于向信号线（2）和扫描线（3）输入信号的多个输入端（7）; 和相对于输入端子（7）设置在外部区域中的短路布线（8），其中短路布线（8）包括主干布线（8a）和多个分支布线（8b）从所述中继线布线（8a）分支并且连接到各个输入端子（7），并且在所述短路布线（8）上设置有多个隔板部分（9）。分离器部分（9）将各个输入端子（7）和干线布线（8a）彼此电隔离。

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