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1. 发明申请

US20100308349A1 LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光二极管，用于制造发光二极管的方法，集成发光二极管和用于制造集成发光二极管的方法，用于生长基于氮化物的III-V族化合物半导体的方法，光源电池单元，发光二极管背光和发光二极管显示器和电子设备
公开(公告)号：US20100308349A1
公开(公告)日：2010-12-09
申请号：US12797042
申请日：2010-06-09
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L33/08 , H01L33/30
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.
摘要翻译：一种发光二极管，其具有（a）在一个主表面上具有至少一个凹部的基板; （b）在所述基板上生长的第六氮化物基III-V族化合物半导体层，而不在所述凹部中形成空间; 和（c）在第六氮化物基上形成的第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层 III-V族化合物半导体层，其中，所述第六氮化物系III-V族化合物半导体层中的与所述凹部的底面的界面在与所述一个主面垂直的方向上的位错发生位错到达具有凹部的底面的三角形的倾斜面或其附近为基部，并且在与该一个主面平行的方向上弯曲。

2. 发明授权

US07754504B2 Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode 失效
标题翻译：发光二极管，制造发光二极管的方法，集成发光二极管和制造集成发光二极管的方法，用于生长氮化物III-V族化合物半导体的方法，光源电池单元，发光二极管
公开(公告)号：US07754504B2
公开(公告)日：2010-07-13
申请号：US11383526
申请日：2006-05-16
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.
摘要翻译：一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

3. 发明申请

US20060258027A1 LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE 失效
标题翻译：发光二极管，用于制造发光二极管的方法，集成发光二极管和用于制造集成发光二极管的方法，用于生长基于氮化物的III-V族化合物半导体的方法，光源电池单元，发光二极管背光和发光二极管显示器和电子设备
公开(公告)号：US20060258027A1
公开(公告)日：2006-11-16
申请号：US11383526
申请日：2006-05-16
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.
摘要翻译：一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

4. 发明申请

US20070085093A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20070085093A1
公开(公告)日：2007-04-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

5. 发明授权

US09034738B2 Method for growing a nitride-based III-V Group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US09034738B2
公开(公告)日：2015-05-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

6. 发明申请

US20110212559A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20110212559A1
公开(公告)日：2011-09-01
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

7. 发明授权

US08859401B2 Method for growing a nitride-based III-V group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US08859401B2
公开(公告)日：2014-10-14
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

8. 发明授权

US08435880B2 Method for manufacturing semiconductor device and semiconductor device 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US08435880B2
公开(公告)日：2013-05-07
申请号：US12906217
申请日：2010-10-18
申请人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
发明人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32 , H01S5/3013
摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.
摘要翻译：在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

9. 发明申请

US20110095401A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20110095401A1
公开(公告)日：2011-04-28
申请号：US12906217
申请日：2010-10-18
申请人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
发明人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32 , H01S5/3013
摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.
摘要翻译：在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

10. 发明授权

US07189665B2 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device 有权
标题翻译：晶体半导体材料的制造方法和半导体器件的制造方法
公开(公告)号：US07189665B2
公开(公告)日：2007-03-13
申请号：US11293727
申请日：2005-12-02
申请人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
发明人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02609 , H01L21/2026 , H01L27/1281 , H01L29/045 , H01L29/78675
摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
摘要翻译：提供了包括多个半导体晶粒的结晶半导体材料的制造方法。该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有大致垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层厚度的约1/4的范围内的高度，以及横向尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于对预测。因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

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