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1. 发明申请

US20070085093A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20070085093A1
公开(公告)日：2007-04-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

2. 发明授权

US09034738B2 Method for growing a nitride-based III-V Group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US09034738B2
公开(公告)日：2015-05-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

3. 发明申请

US20110212559A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20110212559A1
公开(公告)日：2011-09-01
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

4. 发明授权

US08859401B2 Method for growing a nitride-based III-V group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US08859401B2
公开(公告)日：2014-10-14
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

5. 发明授权

US08435880B2 Method for manufacturing semiconductor device and semiconductor device 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US08435880B2
公开(公告)日：2013-05-07
申请号：US12906217
申请日：2010-10-18
申请人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
发明人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32 , H01S5/3013
摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.
摘要翻译：在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

6. 发明申请

US20110095401A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20110095401A1
公开(公告)日：2011-04-28
申请号：US12906217
申请日：2010-10-18
申请人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
发明人： Akira Ohmae , Kota Tokuda , Masayuki Arimochi , Nobuhiro Suzuki , Michinori Shiomi , Tomonori Hino , Katsunori Yanashima
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32 , H01S5/3013
摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.
摘要翻译：在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

7. 发明授权

US07196357B2 Optical semiconductor apparatus 有权
标题翻译：光半导体装置
公开(公告)号：US07196357B2
公开(公告)日：2007-03-27
申请号：US11192727
申请日：2005-07-29
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

8. 发明授权

US08680540B2 Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber 有权
标题翻译：具有采用单芯光纤的双向通信系统的光半导体装置
公开(公告)号：US08680540B2
公开(公告)日：2014-03-25
申请号：US11619352
申请日：2007-01-03
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

9. 发明申请

US20050274962A1 Optical semiconductor apparatus 有权
标题翻译：光半导体装置
公开(公告)号：US20050274962A1
公开(公告)日：2005-12-15
申请号：US11192727
申请日：2005-07-29
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： G02B6/42 , G01J1/32 , H01L29/16 , H01L29/267 , H01L31/12 , H01L31/173 , H01S5/183
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

10. 发明授权

US06960791B2 Optical semiconductor apparatus 有权
公开(公告)号：US06960791B2
公开(公告)日：2005-11-01
申请号：US10764640
申请日：2004-01-26
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： G02B6/42 , G01J1/32 , H01L29/16 , H01L29/267 , H01L31/12 , H01L31/173 , H01S5/183
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

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