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    • 9. 发明授权
    • Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
    • 晶体半导体材料的制造方法和半导体器件的制造方法
    • US07189665B2
    • 2007-03-13
    • US11293727
    • 2005-12-02
    • Kazushi NakanoYukihisa HitsudaToshio FujinoMichinori ShiomiJunichi Sato
    • Kazushi NakanoYukihisa HitsudaToshio FujinoMichinori ShiomiJunichi Sato
    • H01L21/00
    • H01L21/02686C30B13/00C30B29/06H01L21/02609H01L21/2026H01L27/1281H01L29/045H01L29/78675
    • A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
    • 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起,每个突起具有大致垂直于基板的平坦表面的侧壁表面,设置在约1nm至小于或等于半导体层厚度的约1/4的范围内的高度,以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次,从而形成晶体半导体材料,该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒,使得晶粒分别对应于 对预测。 因此,可以通过简单的步骤来控制晶体的位置,尺寸和平面取向,并且可以形成作为膜的平面性优异的结晶半导体材料。
    • 10. 发明申请
    • Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
    • 晶体半导体材料的制造方法和半导体器件的制造方法
    • US20060084246A1
    • 2006-04-20
    • US11293727
    • 2005-12-02
    • Kazushi NakanoYukihisa HitsudaToshio FujinoMichinori ShiomiJunichi Sato
    • Kazushi NakanoYukihisa HitsudaToshio FujinoMichinori ShiomiJunichi Sato
    • H01L21/20H01L21/36
    • H01L21/02686C30B13/00C30B29/06H01L21/02609H01L21/2026H01L27/1281H01L29/045H01L29/78675
    • A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
    • 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起,每个突起具有基本上垂直于基板的平坦表面的侧壁表面,设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度,以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次,从而形成晶体半导体材料,该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒,使得晶粒分别对应于 对预测。 因此,可以通过简单的步骤来控制晶体的位置,尺寸和平面取向,并且可以形成作为膜的平面性优异的结晶半导体材料。