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    • 9. 发明申请
    • METHOD FOR PRODUCING OPTICALLY ACTIVE 2-ARYLPIPERAZINE DERIVATIVE
    • 用于生产光学活性2-亚氨基吡啶衍生物的方法
    • US20100087643A1
    • 2010-04-08
    • US12449460
    • 2008-02-05
    • Masatoshi OhnukiAkira NishiyamaMasaru Mitsuda
    • Masatoshi OhnukiAkira NishiyamaMasaru Mitsuda
    • C07D241/04
    • C07B53/00C07D241/04
    • The objective of the present invention is to produce an optically active 2-arylpiperazine derivative useful as a synthetic intermediate for pharmaceutical products and agricultural chemicals from inexpensive and readily available starting material by an industrially practicable method. The objective can be accomplished by treating an optically active substituted aminodiol derivative produced from an optically active styrene oxide derivative with a sulfonating agent in the presence of a base, and then reacting an amine compound to obtain the 2-arylpiperazine derivative. Especially, an optically active 1-unsubstituted-2-arylpiperazine derivative can be produced by treating an optically active 1-allyl-2-arylpiperazine derivative with water in the presence of a transition metal catalyst for deallylation.
    • 本发明的目的是通过工业上可行的方法从便宜且容易获得的原料制备用作药物产品和农药的合成中间体的光学活性2-芳基哌嗪衍生物。 该目的可以通过在碱的存在下用磺化剂处理由光学活性苯乙烯氧化物衍生物产生的光学活性取代的氨基二醇衍生物,然后使胺化合物反应得到2-芳基哌嗪衍生物来实现。 特别地,光学活性的1-未取代-2-芳基哌嗪衍生物可以通过在过渡金属催化剂的存在下用水处理光学活性的1-烯丙基-2-芳基哌嗪衍生物来进行脱气。
    • 10. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
    • 非易失性半导体存储器件
    • US20100052035A1
    • 2010-03-04
    • US12403493
    • 2009-03-13
    • Masahiro KOIKEYuichiro MitaniTatsuo ShimizuNaoki YasudaYasushi NakasakiAkira Nishiyama
    • Masahiro KOIKEYuichiro MitaniTatsuo ShimizuNaoki YasudaYasushi NakasakiAkira Nishiyama
    • H01L29/788H01L29/792
    • H01L29/7881H01L21/28273H01L21/28282H01L27/11521H01L29/513
    • A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
    • 一种非易失性半导体存储器件,包括:在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜,所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位,所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成,所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。