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1. 发明申请

US20150166481A1 METHOD FOR PRODUCING OPTICALLY ACTIVE 3-AMINOPIPERIDINE OR SALT THEREOF 审中-公开
标题翻译：用于生产光学活性的3-氨基哌啶或其盐的方法
公开(公告)号：US20150166481A1
公开(公告)日：2015-06-18
申请号：US14633622
申请日：2015-02-27
申请人： Kohei MORI , Masutoshi NOJIRI , Akira NISHIYAMA , Naoaki TAOKA
发明人： Kohei MORI , Masutoshi NOJIRI , Akira NISHIYAMA , Naoaki TAOKA
IPC分类号： C07D211/60 , C07D211/56
CPC分类号： C07D211/60 , C07B57/00 , C07D211/56 , C12P17/12 , C12P41/006
摘要： The present invention relates to a method for producing an optically active 3-aminopiperidine or salt thereof. In the method, a racemic nipecotamide is stereoselectively hydrolyzed to obtain an optically active nipecotamide and an optically active nipecotic acid in the presence of an enzyme source derived from an organism, and then the optically active nipecotamide is derived into an optically active aminopiperidine or salt thereof by aroylation, Hofmann rearrangement, deprotection of the amino group and further deprotection; or the optically active nipecotamide is derived into an optically active aminopiperidine or salt thereof by selective protection with BOC, Hofmann rearrangement and further deprotection. It is possible by the present invention to produce an optically active 3-aminopiperidine or salt thereof useful as a pharmaceutical intermediate from an inexpensive and easily available starting material by easy method applicable to industrial manufacturing.
摘要翻译：本发明涉及一种光学活性3-氨基哌啶或其盐的制备方法。在该方法中，外消旋的丙内酰胺立体选择性地水解，得到光生活性的哌甲酰胺和光学活性的啮齿二甲酸，在衍生自生物体的酶源存在下，然后将光学活性的哌甲酰胺衍生成光学活性的氨基哌啶或其盐通过酰化，Hofmann重排，氨基脱保护和进一步去保护; 或通过用BOC，霍夫曼重排和进一步去保护的选择性保护将光学活性的哌甲酰胺衍生成光学活性氨基哌啶或其盐。通过本发明可以通过适用于工业制造的容易的方法从廉价且容易获得的原料中制备用作药物中间体的光学活性3-氨基哌啶或其盐。

2. 发明申请

US20120202672A1 ENVELOPE WARPAGE CORRECTING DEVICE 有权
公开(公告)号：US20120202672A1
公开(公告)日：2012-08-09
申请号：US13361493
申请日：2012-01-30
申请人： Akira NISHIYAMA
发明人： Akira NISHIYAMA
IPC分类号： B31F1/00
CPC分类号： B41J13/12
摘要： An envelope warpage correcting device includes a sheet feeding portion, a correction means and a control portion. The sheet feeding portion feeds envelopes one-by-one in a state where the envelopes are stacked on a sheet feed table and a rear end portion opposite to a flap portion formed in a front end portion of each of the envelopes is set to a leading portion in a sheet feed direction. The correction means corrects warpage occurring at a side of the rear end portion of the envelope fed by the sheet feeding portion. The control portion controls processing for correcting the warpage occurring at the side of the rear end portion by the correcting portion at certain timing according to an attribution of the envelope.
摘要翻译：信封翘曲校正装置包括片材馈送部分，校正装置和控制部分。片材进给部分在信封堆叠在供纸台上的状态下一个接一个地进给信封，并且与形成在每个信封的前端部分中的折片部分相对的后端部分被设置为前导部分在片材进给方向上。校正装置校正在由送纸部分供给的信封的后端部的一侧发生的翘曲。控制部根据信封的属性来控制在某一定时由校正部校正在后端部侧的翘曲的处理。

3. 发明授权

US07986014B2 Semiconductor device 有权
公开(公告)号：US07986014B2
公开(公告)日：2011-07-26
申请号：US12654490
申请日：2009-12-22
申请人： Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
发明人： Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.

4. 发明授权

US07834190B2 Process for production of optically active-3-amino-2-hydroxypropionic cyclopropylamide derivatives and salts thereof 有权
标题翻译：光学活性-3-氨基-2-羟基丙基丙烯酰胺衍生物及其盐的制备方法
公开(公告)号：US07834190B2
公开(公告)日：2010-11-16
申请号：US12227788
申请日：2007-05-22
申请人： Kohei Mori , Akira Nishiyama , Naoaki Taoka , Daisuke Moriyama , Nobuo Nagashima
发明人： Kohei Mori , Akira Nishiyama , Naoaki Taoka , Daisuke Moriyama , Nobuo Nagashima
IPC分类号： C07D263/08 , C07D303/02
CPC分类号： C07B53/00 , C07B2200/07 , C07C67/31 , C07C231/18 , C07C237/04 , C07C237/22 , C07C2601/02 , C07D263/16 , C07D301/24 , C07D303/16 , C07D303/48 , C12P7/42 , C12P13/02 , C12P41/002 , C07C69/675
摘要： An objective of the present application is to provide an industrially practicable method for producing an optically-active 3-amino-2-hydroxypropionic cyclopropylamide derivative or salt thereof from an inexpensive easily-available starting material. The derivative or salt thereof is useful as an intermediate for a medicine. It is also intended by the present application to provide a useful intermediate of the derivative. The objective is attained by the following method. First, an easily-available 2-halo-3-oxopropionic acid derivative is asymmetrically reduced, and then epoxidated to produce an optically-active epoxycarboxylic acid derivative. Next, the derivative is converted into an optically-active epoxyamide derivative by reaction with cyclopropylamine, and then reacted with a nitrile to obtain an optically-active oxazolinamide derivative. Subsequently, selective acid solvolysis of the oxazoline skeleton gives the optically-active 3-amino-2-hydroxypropionic cyclopropylamide derivative or salt thereof.
摘要翻译：本申请的目的是提供从便宜的廉价起始材料制备光学活性3-氨基-2-羟基丙基环丙基酰胺衍生物或其盐的工业上可行的方法。其衍生物或其盐可用作药物的中间体。本申请还希望提供衍生物的有用中间体。目的是通过以下方法实现。首先，容易获得的2-卤代-3-氧代丙酸衍生物被不对称地还原，然后环氧化以产生光学活性的环氧羧酸衍生物。接下来，通过与环丙胺反应将衍生物转化为光学活性的环氧酰胺衍生物，然后与腈反应，得到光学活性的恶唑啉酰胺衍生物。随后，恶唑啉骨架的选择性酸溶剂解产生光学活性3-氨基-2-羟基丙基丙烯酰胺衍生物或其盐。

5. 发明授权

US07807426B2 Processes for producing optically active 1-substituted 2-methylpyrrolidine 失效
标题翻译：光学活性1-取代2-甲基吡咯烷的制备方法
公开(公告)号：US07807426B2
公开(公告)日：2010-10-05
申请号：US10586337
申请日：2005-01-19
申请人： Akira Nishiyama , Naoaki Taoka , Narumi Kishimoto , Nobuo Nagashima
发明人： Akira Nishiyama , Naoaki Taoka , Narumi Kishimoto , Nobuo Nagashima
IPC分类号： C12P7/18 , C12P7/00
CPC分类号： C12P17/10 , C07C303/28 , C12P7/18 , C12P11/00 , C07C309/66
摘要： The present invention relates to a process for producing an optically active 1,4-pentanediol by asymmetrically reducing 5-hydroxy-2-pentanone, which is easily available at low cost. The present invention also relates to a process for producing an optically active 1-substituted 2-methylpyrrolidine including sulfonylating the optically active 1,4-pentanediol to convert it to an optically active sulfonate compound, and reacting the compound with an amine. According to the processes of the present invention, an optically active 1,4-pentanediol and an optically active 1-substituted 2-methylpyrrolidine, which are useful as an intermediate for medicines and an intermediate for agricultural chemicals, can be simply produced from an inexpensive starting material.
摘要翻译：本发明涉及通过不对称地还原5-羟基-2-戊酮来制备光学活性的1,4-戊二醇的方法，该方法容易以低成本获得。本发明还涉及一种光学活性1-取代的2-甲基吡咯烷的制备方法，其包括使光学活性的1,4-戊二醇磺酰化以将其转化成光学活性的磺酸盐化合物，并使该化合物与胺反应。根据本发明的方法，用作药物中间体和农药中间体的光学活性的1,4-丁二醇和光学活性的1-取代的2-甲基吡咯烷可以简便地从廉价的起始材料

6. 发明申请

US20100087643A1 METHOD FOR PRODUCING OPTICALLY ACTIVE 2-ARYLPIPERAZINE DERIVATIVE 失效
标题翻译：用于生产光学活性2-亚氨基吡啶衍生物的方法
公开(公告)号：US20100087643A1
公开(公告)日：2010-04-08
申请号：US12449460
申请日：2008-02-05
申请人： Masatoshi Ohnuki , Akira Nishiyama , Masaru Mitsuda
发明人： Masatoshi Ohnuki , Akira Nishiyama , Masaru Mitsuda
IPC分类号： C07D241/04
CPC分类号： C07B53/00 , C07D241/04
摘要： The objective of the present invention is to produce an optically active 2-arylpiperazine derivative useful as a synthetic intermediate for pharmaceutical products and agricultural chemicals from inexpensive and readily available starting material by an industrially practicable method. The objective can be accomplished by treating an optically active substituted aminodiol derivative produced from an optically active styrene oxide derivative with a sulfonating agent in the presence of a base, and then reacting an amine compound to obtain the 2-arylpiperazine derivative. Especially, an optically active 1-unsubstituted-2-arylpiperazine derivative can be produced by treating an optically active 1-allyl-2-arylpiperazine derivative with water in the presence of a transition metal catalyst for deallylation.
摘要翻译：本发明的目的是通过工业上可行的方法从便宜且容易获得的原料制备用作药物产品和农药的合成中间体的光学活性2-芳基哌嗪衍生物。该目的可以通过在碱的存在下用磺化剂处理由光学活性苯乙烯氧化物衍生物产生的光学活性取代的氨基二醇衍生物，然后使胺化合物反应得到2-芳基哌嗪衍生物来实现。特别地，光学活性的1-未取代-2-芳基哌嗪衍生物可以通过在过渡金属催化剂的存在下用水处理光学活性的1-烯丙基-2-芳基哌嗪衍生物来进行脱气。

7. 发明申请

US20100052035A1 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100052035A1
公开(公告)日：2010-03-04
申请号：US12403493
申请日：2009-03-13
申请人： Masahiro KOIKE , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
发明人： Masahiro KOIKE , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L29/513
摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

8. 发明授权

US07606640B2 Cooling apparatus and projection type display device 失效
标题翻译：冷却装置和投影式显示装置
公开(公告)号：US07606640B2
公开(公告)日：2009-10-20
申请号：US11290937
申请日：2005-11-30
申请人： Koji Hirai , Yoshitake Kondo , Akira Nishiyama
发明人： Koji Hirai , Yoshitake Kondo , Akira Nishiyama
IPC分类号： G06F19/00
CPC分类号： G03B21/16
摘要： A cooling apparatus able to rotate cooling fans with required lowest limit speeds, and able to suppress power consumption and generated noise includes a cooling unit for cooling an object to be cooled by a cooling amount in accordance with a level of a supplied drive signal; a temperature detector for detecting the temperature of the object; a drive circuit for amplifying the drive signal and supplying an output signal to the cooling unit; a memory for storing correction data for correcting circuit error in the drive circuit; and a control unit for generating the drive signal based on the detected temperature of the object, correcting error in the output signal of the drive circuit based on the correction data stored in the memory, and outputting the generated drive signal to the drive circuit. The cooling apparatus may be used in a projection type display device.
摘要翻译：能够以所需的最低限制速度旋转冷却风扇并且能够抑制功率消耗和产生的噪声的冷却装置包括：冷却单元，用于根据提供的驱动信号的电平冷却要冷却的物体的冷却量; 温度检测器，用于检测物体的温度; 驱动电路，用于放大驱动信号并向冷却单元提供输出信号; 用于存储用于校正驱动电路中的电路错误的校正数据的存储器; 以及控制单元，用于根据检测到的物体的温度产生驱动信号，根据存储在存储器中的校正数据校正驱动电路的输出信号中的误差，并将所生成的驱动信号输出到驱动电路。冷却装置可以用在投影型显示装置中。

9. 发明授权

US07576397B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07576397B2
公开(公告)日：2009-08-18
申请号：US11841757
申请日：2007-08-20
申请人： Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
发明人： Reika Ichihara , Yoshinori Tsuchiya , Masato Koyama , Akira Nishiyama
IPC分类号： H01L27/092
CPC分类号： H01L21/823857 , H01L21/823462
摘要： A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.
摘要翻译：半导体器件包括半导体衬底，形成在衬底上的nMISFET，nMISFET包括形成在衬底上的第一电介质和形成在第一电介质上的第一金属栅极，并由选自Ti，Zr，Hf， Ta，Sc，Y，镧系元素和锕系和选自所述一种金属元素的硼化物，硅化物和锗化合物的一种，以及形成在所述衬底上的pMISFET，所述pMISFET包括形成在所述衬底上的第二电介质和第二金属栅电极形成在第二电介质上并由与第一金属栅电极相同的材料制成，第二电介质面向第二金属栅电极的至少一部分由绝缘材料制成，绝缘材料与至少一部分的第一电介质面向第一金属栅电极。

10. 发明申请

US20090166767A1 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US20090166767A1
公开(公告)日：2009-07-02
申请号：US12320279
申请日：2009-01-22
申请人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
发明人： Yuuichi Kamimuta , Akira Nishiyama , Yasushi Nakasaki , Tsunehiro Ino , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

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