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    • 2. 发明授权
    • High pressure metal vapor discharge lamp with starting element
    • 高压金属蒸汽放电灯带起动元件
    • US4742275A
    • 1988-05-03
    • US45232
    • 1987-05-01
    • Akira ItoKouzou Kawashima
    • Akira ItoKouzou Kawashima
    • H05B41/19H05B39/04
    • H05B41/19
    • A high pressure metal vapor discharge lamp comprises a light-emitting tube in which a pair of electrodes is enclosed, a starting element including a normally closed-type thermal switch and a resistive member, the starting element generating a pulse by closing and opening switch operations, a connecting element for electrically connecting the starting element to the electrodes, the pulse being applied to the electrodes through the connecting element, and a member including an insulating body provided in vicinity of the thermal switch for causing a conductive portion to be formed on the body, the conductive portion being sufficient to bypass a current supplied to the starting element by repetitions of the switch operations, thereby lowering the pulse voltage.
    • 一种高压金属蒸汽放电灯,包括封闭一对电极的发光管,包括常闭型热开关和电阻元件的启动元件,起动元件通过闭合和断开开关动作产生脉冲 ,用于将起始元件电连接到电极的连接元件,通过连接元件施加到电极的脉冲,以及包括设置在热开关附近的绝缘体的构件,用于使导电部分形成在 导体部分足以通过重复开关操作来旁路提供给起始元件的电流,从而降低脉冲电压。
    • 3. 发明授权
    • High pressure metal vapor discharge lamp
    • 高压金属蒸汽放电灯
    • US4431945A
    • 1984-02-14
    • US355190
    • 1982-03-05
    • Kouzou KawashimaAkira Ito
    • Kouzou KawashimaAkira Ito
    • H01J61/54H01J61/56H05B41/08H01J7/44H01J17/34H01J23/16H01J29/96
    • H01J61/56
    • A high pressure metal vapor discharge lamp comprising a discharge tube disposed in an outer jacket; said discharge tube having electrodes and containing a filling comprising a starting rare gas composed primarily of xenon at a pressure from 40 to 200 Torr; means for starting said discharge tube comprising a glow starter comprising a pair of contacts spaced apart not more than 2.5 mm from each other, and containing a gas composed primarily of argon at a pressure of at least 7 Torr; the pressure in said glow starter (P.sub.g) being related to the pressure in the discharge tube (P.sub.i), according to the expression ##EQU1## and a starting electric conductor adapted to contact the discharge tube on starting thereof and to separate from the discharge tube after starting.
    • 一种高压金属蒸汽放电灯,包括设置在外护套中的放电管; 所述放电管具有电极并且包含在40至200乇的压力下包含主要由氙组成的起始稀有气体的填充物; 用于起动所述放电管的装置,其包括辉光启动器,其包括彼此间隔开不超过2.5mm的一对触点,并且在至少7托的压力下包含主要由氩组成的气体; 所述辉光启动器(Pg)中的压力与放电管(Pi)中的压力相关,根据表达式和适于在启动时接触放电管并从放电管分离的起动电导体 开始后
    • 8. 发明授权
    • Method and system for last gasp device detection
    • 最后一个喘气装置检测方法和系统
    • US09088994B2
    • 2015-07-21
    • US13601692
    • 2012-08-31
    • Dorin ViorelAkira Ito
    • Dorin ViorelAkira Ito
    • H04W24/00H04W74/08H04L29/14
    • H04W74/0841H04L69/40
    • A method is provided for device detection by a base station comprising receiving a plurality of signals over a preamble subframe from an endpoint. The plurality of signals are attempting to access an access group of the preamble subframe. Additionally, the plurality of signals are received on a random access channel using a wireless network. Further, the plurality of signals have a plurality of last gasp messages (LGMs). The method additionally comprises determining an allowable rate of collisions for the plurality of signals and determining an actual rate of collisions for the plurality of signals. The method includes increasing the size of the access group allocated to the plurality of signals having the plurality of LGMs, based on whether the actual rate of collisions exceeds the allowable rate of collisions.
    • 提供了一种用于由基站进行设备检测的方法,包括:从端点通过前导码子帧接收多个信号。 多个信号正试图访问前同步码子帧的接入组。 另外,使用无线网络在随机接入信道上接收多个信号。 此外,多个信号具有多个最后的喘气信息(LGM)。 该方法还包括确定多个信号的可允许冲突率并确定多个信号的实际碰撞速率。 该方法包括:基于实际的冲突率是否超过允许的冲突率,增加分配给具有多个LGM的多个信号的接入组的大小。
    • 9. 发明授权
    • Field transistor structure manufactured using gate last process
    • 使用门最后工艺制造的场晶体管结构
    • US08841674B2
    • 2014-09-23
    • US13174083
    • 2011-06-30
    • Chao-Yang LuGuang-Jye ShiauAkira Ito
    • Chao-Yang LuGuang-Jye ShiauAkira Ito
    • H01L29/78H01L21/28
    • H01L29/7839G11C17/16
    • According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
    • 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。