专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08841674B2 Field transistor structure manufactured using gate last process 有权
标题翻译：使用门最后工艺制造的场晶体管结构
公开(公告)号：US08841674B2
公开(公告)日：2014-09-23
申请号：US13174083
申请日：2011-06-30
申请人： Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
发明人： Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/7839 , G11C17/16
摘要： According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
摘要翻译：根据本发明的实施例，提供了场晶体管结构。场晶体管结构包括半导体衬底，金属栅极，多晶硅（多晶硅）层以及第一和第二金属部分。多晶硅层具有第一，第二，第三和第四边，并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。根据本发明的一些实施例，场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。薄金属层可以电连接到第一和第二金属部分中的每一个。

2. 发明申请

US20130113077A1 Metal Finger Capacitor for High-K Metal Gate Processes 有权
标题翻译：金属手指电容器用于高K金属栅极工艺
公开(公告)号：US20130113077A1
公开(公告)日：2013-05-09
申请号：US13338492
申请日：2011-12-28
申请人： Agnes Neves WOO , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
发明人： Agnes Neves WOO , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
IPC分类号： H01L29/02
CPC分类号： H01L23/5223 , H01L23/522 , H01L23/5222 , H01L23/5225 , H01L27/016 , H01L27/0207 , H01L28/86 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要： Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.
摘要翻译：本文描述的实施例提供了用于手指电容器，更具体地金属氧化物金属（“MOM”）指状电容器和指状电容器阵列的结构。多个浅沟槽隔离（STI）结构与电容器手指的每隔一列相关联，多层填充层覆盖STI构造以提供更坚固和更有效的结构。

3. 发明申请

US20130001574A1 FIELD TRANSISTOR STRUCTURE MANUFACTURED USING GATE LAST PROCESS 有权
标题翻译：采用闸门过程制造的现场晶体管结构
公开(公告)号：US20130001574A1
公开(公告)日：2013-01-03
申请号：US13174083
申请日：2011-06-30
申请人： Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
发明人： Chao-Yang Lu , Guang-Jye Shiau , Akira Ito
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/7839 , G11C17/16
摘要： According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
摘要翻译：根据本发明的实施例，提供了场晶体管结构。场晶体管结构包括半导体衬底，金属栅极，多晶硅（多晶硅）层以及第一和第二金属部分。多晶硅层具有第一，第二，第三和第四边，并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。根据本发明的一些实施例，场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。薄金属层可以电连接到第一和第二金属部分中的每一个。

4. 发明授权

US09287209B2 Metal finger capacitor for high-K metal gate processes 有权
标题翻译：金属制电容器用于高K金属栅极工艺
公开(公告)号：US09287209B2
公开(公告)日：2016-03-15
申请号：US13338492
申请日：2011-12-28
申请人： Agnes Neves Woo , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
发明人： Agnes Neves Woo , Pascal Tran , Akira Ito , Guang-Jye Shiau , Chao-Yang Lu , Jung Wang
IPC分类号： H01L23/522 , H01L27/02 , H01L27/01 , H01L49/02
CPC分类号： H01L23/5223 , H01L23/522 , H01L23/5222 , H01L23/5225 , H01L27/016 , H01L27/0207 , H01L28/86 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要： Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.
摘要翻译：本文描述的实施例提供了用于手指电容器，更具体地金属氧化物金属（“MOM”）指状电容器和指状电容器阵列的结构。多个浅沟槽隔离（STI）结构与电容器手指的每隔一列相关联，多层填充层覆盖STI构造以提供更坚固和更有效的结构。

5. 发明授权

US08717137B2 On-chip inductor using redistribution layer and dual-layer passivation 有权
标题翻译：片上电感使用再分配层和双层钝化
公开(公告)号：US08717137B2
公开(公告)日：2014-05-06
申请号：US11443171
申请日：2006-05-31
申请人： Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
发明人： Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
IPC分类号： H01F5/00
CPC分类号： H01L28/10 , H01F5/00 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L23/525 , H01L24/10 , H01L24/13 , H01L27/08 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/056 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00014
摘要： A system and method utilize a redistribution layer in a flip-chip or wirebond package, which is also used to route signals to bumps, as a layer for the construction of an on-chip inductor or a layer of a multiple-layer on-chip inductor. In one example, the redistribution layer is surrounded by dual-layer passivation to protect it, and the inductor formed thereby, from the environment and isolate it, and the inductor formed thereby, from the metal layer beneath it.
摘要翻译：一种系统和方法利用倒装芯片或引线键合封装中的再分布层，其也用于将信号路由到凸点，作为用于构建片上电感器的层或多层片上层电感。在一个示例中，再分布层被双层钝化包围，以保护它，并且从环境形成的电感器从其环境中分离出来并将其与其形成的电感器从其下方的金属层隔离开来。

6. 发明申请

US20080067589A1 Transistor having reduced channel dopant fluctuation 审中-公开
标题翻译：具有减小的沟道掺杂剂波动的晶体管
公开(公告)号：US20080067589A1
公开(公告)日：2008-03-20
申请号：US11524721
申请日：2006-09-20
申请人： Akira Ito , Henry Kuoshun Chen , Guang-Jye Shiau
发明人： Akira Ito , Henry Kuoshun Chen , Guang-Jye Shiau
IPC分类号： H01L29/76
CPC分类号： H01L29/78 , H01L29/66575
摘要： According to one exemplary embodiment, a transistor includes a source and a drain separated by a channel. The transistor further includes a gate dielectric layer situated over the channel. The channel is situated in a well formed in a substrate. A pocket implant is not formed between the source and the drain so as to reduce dopant fluctuation in the channel, thereby reducing transistor mismatch. According to this exemplary embodiment, an LDD implant is not formed between the source and the drain so as to further reduce the dopant fluctuation in the channel.
摘要翻译：根据一个示例性实施例，晶体管包括由沟道分离的源极和漏极。晶体管还包括位于通道上方的栅极电介质层。通道位于形成在基底中的阱中。在源极和漏极之间不形成口袋注入，以减少沟道中的掺杂剂波动，从而减少晶体管失配。根据该示例性实施例，在源极和漏极之间不形成LDD注入，以进一步减小沟道中的掺杂剂波动。

7. 发明申请

US20070279176A1 On-chip inductor using redistribution layer and dual-layer passivation 有权
标题翻译：片上电感使用再分配层和双层钝化
公开(公告)号：US20070279176A1
公开(公告)日：2007-12-06
申请号：US11443171
申请日：2006-05-31
申请人： Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
发明人： Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
IPC分类号： H01F5/00
CPC分类号： H01L28/10 , H01F5/00 , H01F17/0013 , H01F41/041 , H01L23/5227 , H01L23/525 , H01L24/10 , H01L24/13 , H01L27/08 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/056 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00014
摘要： A system and method utilize a redistribution layer in a flip-chip or wirebond package, which is also used to route signals to bumps, as a layer for the construction of an on-chip inductor or a layer of a multiple-layer on-chip inductor. In one example, the redistribution layer is surrounded by dual-layer passivation to protect it, and the inductor formed thereby, from the environment and isolate it, and the inductor formed thereby, from the metal layer beneath it.
摘要翻译：一种系统和方法利用倒装芯片或引线键合封装中的再分布层，其也用于将信号路由到凸点，作为用于构建片上电感器的层或多层片上层电感。在一个示例中，再分布层被双层钝化包围，以保护它，并且从环境形成的电感器从其环境中分离出来并将其与其形成的电感器从其下方的金属层隔离开来。

8. 发明授权

US09774483B2 Communication apparatus, communication system, communication method, and terminal apparatus 有权
公开(公告)号：US09774483B2
公开(公告)日：2017-09-26
申请号：US13323374
申请日：2011-12-12
申请人： Akira Ito
发明人： Akira Ito
IPC分类号： H04L27/26 , H04W72/04 , H04W76/04
CPC分类号： H04L27/2647 , H04W72/042 , H04W76/20 , H04W76/28
摘要： A communication apparatus includes a receiver that can receive data that has been divided among multiple communication carriers and transmitted, and that has multiple communication modes, each using a different number of communication carriers for reception; an acquirer that acquires information indicating a change in the communication volume of the receiver; and a switch that switches the communication mode of the receiver, based on the information acquired by the acquirer.

9. 发明授权

US09597975B2 Power supply system 有权
公开(公告)号：US09597975B2
公开(公告)日：2017-03-21
申请号：US13554553
申请日：2012-07-20
申请人： Akira Ito , Junichirou Kanamori , Mitsuru Fujita , Tatsuya Suzuki , Shinkichi Inagaki , Masahiro Sumiya , Takuma Yamaguchi
发明人： Akira Ito , Junichirou Kanamori , Mitsuru Fujita , Tatsuya Suzuki , Shinkichi Inagaki , Masahiro Sumiya , Takuma Yamaguchi
IPC分类号： G06F1/26 , B60L11/18 , B60L3/12
CPC分类号： B60L11/1844 , B60L3/12 , B60L11/1816 , B60L11/184 , B60L11/1842 , B60L11/1846 , B60L2230/16 , B60L2230/22 , B60L2240/66 , Y02E60/721 , Y02T10/7005 , Y02T10/7088 , Y02T10/7291 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/163 , Y02T90/169 , Y04S10/126 , Y04S30/14
摘要： A power supply system for supplying a grid power to a building includes a power generator, a power storing device, and a power controller. The power generator generates off-grid power from a predetermined energy. The power storing device stores the grid power and the off-grid power and supplies the stored power to the building. The power controller controls consumptions of the grid power and the off-grid power. The power controller calculates predicted consumption data related to power consumed in the building and predicted generation data related to power generated by the power generator. The power controller calculates a charging-discharging schedule for the power storing device based on the predicted consumption data and the predicted generation data by formulating the charging-discharging schedule as a mixed integer programming problem.

10. 发明授权

US09103378B2 Bearing, lubricant distribution acquisition device and lubricant distribution acquisition method 有权
标题翻译：轴承，润滑剂分配采集装置和润滑剂分配采集方法
公开(公告)号：US09103378B2
公开(公告)日：2015-08-11
申请号：US14002783
申请日：2012-03-09
申请人： Takehisa Takano , Hiroyuki Nose , Akira Ito
发明人： Takehisa Takano , Hiroyuki Nose , Akira Ito
IPC分类号： G01N23/05 , F16C41/00 , F16C33/66 , G01M13/04 , F16C33/62
CPC分类号： F16C41/008 , F16C33/62 , F16C33/6625 , F16C41/007 , F16C2204/20 , F16C2233/00 , G01M13/04
摘要： A bearing (X) inside which a lubricant is able to be sealed is provided with: a rotary motion body (X2) that moves when a rotation drive force is applied; and a rotation angle indicator (X6) that is provided on the rotary motion body (X2) and that is moved, in conjunction with the movement of the rotary motion body (X2), to a position that corresponds to the rotation angle of the rotary motion body (X2).
摘要翻译：其中润滑剂能够密封的轴承（X）设置有：当施加旋转驱动力时移动的旋转运动体（X2）; 以及设置在旋转运动体（X2）上并且与旋转运动体（X2）的移动一起移动的旋转角度指示器（X6）到与旋转运动体（X2）的旋转角度相对应的位置运动体（X2）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式