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    • 3. 发明授权
    • Semiconductor laser apparatus
    • 半导体激光装置
    • US4757509A
    • 1988-07-12
    • US888398
    • 1986-07-23
    • Kunihiko IsshikiWataru Susaki
    • Kunihiko IsshikiWataru Susaki
    • H01S5/00H01S5/16H01S3/19
    • H01S5/16
    • Laser light guided by a coupled waveguide (formed by difference in refractive index between n-type and p-type AlGaAs clad layers (2) and (4) and an undoped AlGaAs active layer (3) and difference in refractive index between the p-type AlGaAs clad layers (4) and (7) and a p-type AlGaAs waveguide layer (6)) is guided only by the p-type AlGaAs waveguide layer (6) in the vicinity of end surfaces (40, 42), not to be coupled with the undoped AlGaAs active layer (3). Therefore, surface regions of the end surfaces (40, 42) reflecting the laser light are formed by the p-type AlGaAs clad layers (4, 7) and the p-type AlGaAs waveguide layer (6) being larger in forbidden bandwidth.
    • 由耦合波导引导的激光(由n型和p型AlGaAs覆盖层(2)和(4)之间的折射率差异和未掺杂的AlGaAs有源层(3)形成的折射率差异, (4)和(7)和p型AlGaAs波导层(6))仅在端面(40,42)附近由p型AlGaAs波导层(6)引导,而不是由p型AlGaAs波导层 与未掺杂的AlGaAs活性层(3)耦合。 因此,反射激光的端面(40,42)的表面区域由p型AlGaAs覆层(4,7)形成,p型AlGaAs波导层(6)的禁带宽度较大。