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1. 发明授权

US06559454B1 Ion beam generation apparatus 有权
标题翻译：离子束发生装置
公开(公告)号：US06559454B1
公开(公告)日：2003-05-06
申请号：US09763546
申请日：2001-05-29
申请人： Adrian John Murrell , Erik Jan Hilda Collart , Bernard Francis Harrison , Amir Al-Bayati , Chris James Burgess , David Armour , Andrew Holmes , Simon Povall , Drew Arnold , Paul Anthony Burfield
发明人： Adrian John Murrell , Erik Jan Hilda Collart , Bernard Francis Harrison , Amir Al-Bayati , Chris James Burgess , David Armour , Andrew Holmes , Simon Povall , Drew Arnold , Paul Anthony Burfield
IPC分类号： H01J3715
CPC分类号： H01J27/022 , H01J2237/08 , H01J2237/31701
摘要： An ion beam generation apparatus comprising an ion source (20) for generating ions, and a tetrode extraction assembly (11) comprising four electrodes for extracting and accelerating ions from the ion source. The extraction assembly comprises a source electrode (22) at the potential of the ion source, an extraction electrode (23) adjacent to the source electrode to extract ions from the ion source (20), a ground electrode (25), and a suppression electrode (24) between the extraction electrode and the ground electrode. Each electrode has an aperture to allow the ion beam to pass therethrough. The gap between the extraction (23) and suppression (24) electrodes is variable in the direction of ion beam travel.
摘要翻译：一种离子束产生装置，包括用于产生离子的离子源（20）和四极提取组件（11），其包括用于从离子源提取和加速离子的四个电极。提取组件包括位于离子源电位的源电极（22），与源电极相邻的提取电极（23），用于从离子源（20）提取离子，接地电极（25）和抑制提取电极和接地电极之间的电极（24）。每个电极具有允许离子束通过的孔。提取（23）和抑制（24）电极之间的间隙在离子束行进方向上是可变的。

2. 发明授权

US06897457B1 Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus 失效
标题翻译：用于在离子注入装置中监测和调整离子束的装置和方法
公开(公告)号：US06897457B1
公开(公告)日：2005-05-24
申请号：US09869795
申请日：1999-12-23
申请人： Andrew James Timothy Holmes , David Richard Burgin , Simon Povall , David George Armour , Drew Arnold
发明人： Andrew James Timothy Holmes , David Richard Burgin , Simon Povall , David George Armour , Drew Arnold
IPC分类号： C23C14/48 , H01J37/04 , H01J37/147 , H01J37/304 , H01J37/317 , H01L21/265 , H01J37/15
CPC分类号： H01J37/304 , H01J37/1471 , H01J37/3171 , H01J2237/1501
摘要： An ion implanter has an ion source (10) and an ion beam extraction assembly (50) for extracting the ions. The extraction assembly (50) is a tetrode structure and one of the pairs of extraction electrodes (51) has left and right ports (54, 55) located in opposite sides of the ion beam emerging from the ion source (10). The left and right electrode ports (54, 55) are electrically isolated from each other and connected to independent voltage sources (210, 230). The ion implanter also has a baffle plate (60) at the entrance to a mass analyser (90) downstream of the extraction assembly (50). The baffle plate (60) is also split into two halves (60′ and 60″). By measuring the beam current incident on the two halves (60′, 60″) of the baffle (60), the relative voltages supplied to the left and right electrode parts (54, 55) may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet (90).
摘要翻译：离子注入机具有用于提取离子的离子源（10）和离子束提取组件（50）。提取组件（50）是四极结构，并且一对提取电极（51）中的一个具有位于离离子源（10）的离子束相对侧的左端口和右端口（54,55）。左和右电极端口（54,55）彼此电隔离并且连接到独立的电压源（210,230）。离子注入机还在提取组件（50）下游的质量分析器（90）的入口处具有挡板（60）。挡板（60）也被分成两半（60'和60“）。通过测量入射在挡板（60）的两个半部（60'，60“）上的光束电流，可以调节供应到左和右电极部分（54,55）的相对电压，以便引导离子并且相对于分析磁体（90）的输入调节其纵轴的入射角。

3. 发明授权

US08324592B2 Ion source and a method of generating an ion beam using an ion source 有权
标题翻译：离子源和使用离子源产生离子束的方法
公开(公告)号：US08324592B2
公开(公告)日：2012-12-04
申请号：US12917510
申请日：2010-11-02
申请人： Geoffrey Ryding , Drew Arnold , William H. Park , Ronald Horner
发明人： Geoffrey Ryding , Drew Arnold , William H. Park , Ronald Horner
IPC分类号： H01J27/00 , H01J27/02 , H01J27/04
CPC分类号： H01J27/04 , H01J37/08 , H01J2237/082
摘要： Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.
摘要翻译：多个控制电极在离子源的等离子体室内沿着等离子体室的长度的各个位置处非对称地设置。选择性地偏压控制电极可以选择性地提高沿着提取狭缝的长度的相邻位置处的离子提取电流。公开了一种产生离子束的方法，其中控制沿着等离子体室的长度的不同位置处的横向电场的强度，以沿着狭缝的长度修改离子束线性电流密度分布。该方法用于控制带束束的均匀性。

4. 发明授权

US08426829B2 Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US08426829B2
公开(公告)日：2013-04-23
申请号：US12894229
申请日：2010-09-30
申请人： William H Leavitt , Theodore H Smick , Joseph Daniel Gillespie , William H Park , Paul Eide , Drew Arnold , Geoffrey Ryding
发明人： William H Leavitt , Theodore H Smick , Joseph Daniel Gillespie , William H Park , Paul Eide , Drew Arnold , Geoffrey Ryding
IPC分类号： H01J37/317
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/2007 , H01J2237/201
摘要： An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.
摘要翻译：离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。晶片载体具有晶片保持栅栏，其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面，使得当晶片通过离心力推靠在散热片上时，栅栏不会向晶片边缘施加横向负载。晶片支撑表面包括弹性体材料层，并且栅栏的可移动邻接表面允许在晶片的整个区域上与散热器的均匀热耦合。

5. 发明授权

US08633458B2 Ion implant apparatus and a method of implanting ions 有权
公开(公告)号：US08633458B2
公开(公告)日：2014-01-21
申请号：US13296436
申请日：2011-11-15
申请人： Theodore Smick , Geoffrey Ryding , Hilton Glavish , Takao Sakase , William Park, Jr. , Paul Eide , Drew Arnold , Ronald Horner , Joseph Gillespie
发明人： Theodore Smick , Geoffrey Ryding , Hilton Glavish , Takao Sakase , William Park, Jr. , Paul Eide , Drew Arnold , Ronald Horner , Joseph Gillespie
IPC分类号： G21G5/00
CPC分类号： C23C14/48 , H01J37/1475 , H01J37/20 , H01J37/3171 , H01J2237/1523 , H01J2237/20214
摘要： Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

6. 发明申请

US20120036725A1 KICKBACK DETECTION METHOD AND APPARATUS 审中-公开
标题翻译： KICKBACK检测方法和装置
公开(公告)号：US20120036725A1
公开(公告)日：2012-02-16
申请号：US13208308
申请日：2011-08-11
申请人： Ian Osborne , Drew Arnold , Gale Hall
发明人： Ian Osborne , Drew Arnold , Gale Hall
IPC分类号： B27B17/02 , B27G19/00
CPC分类号： B27B17/083 , B27G19/003 , Y10T83/089
摘要： In various embodiments, a cutting tool such as a chainsaw may include a cutting member that is movable by an engine, one or more sensors configured to detect one or more of acceleration in a direction parallel to one or more axes of the cutting tool and rotational velocity about one or more axes of the cutting tool, and a microprocessor configured to cause movement of the cutting member to stop in response to receiving one or more signals from the one or more sensors. In various embodiments, a method may include receiving, by a microprocessor of a chainsaw, a signal from a gyroscope configured to detect rotational velocity about one or more axes of the cutting tool, and actuating, by the microprocessor, a braking system of the chainsaw to stop movement of a cutting chain around a perimeter of a guide bar in response to the signal.
摘要翻译：在各种实施例中，诸如链锯的切割工具可以包括可由发动机移动的切割构件，一个或多个传感器被配置为检测沿平行于切削工具的一个或多个轴线的方向的加速度和旋转围绕切削工具的一个或多个轴的速度以及微处理器，该微处理器被配置为响应于从一个或多个传感器接收到一个或多个信号而导致切割构件的运动停止。在各种实施例中，一种方法可包括由链锯的微处理器接收来自陀螺仪的信号，该陀螺仪被配置为检测围绕切割工具的一个或多个轴线的旋转速度，以及由微处理器致动链锯的制动系统以响应于信号停止切割链围绕导杆的周边的移动。

7. 发明申请

US20130119263A1 Ion Implant Apparatus and a Method of Implanting Ions 有权
标题翻译：离子植入装置和植入离子的方法
公开(公告)号：US20130119263A1
公开(公告)日：2013-05-16
申请号：US13296436
申请日：2011-11-15
申请人： Theodore Smick , Geoffrey Ryding , Hilton Glavish , Takao Sakase , William Park, JR. , Paul Eide , Drew Arnold , Ronald Horner , Joseph Gillespie
发明人： Theodore Smick , Geoffrey Ryding , Hilton Glavish , Takao Sakase , William Park, JR. , Paul Eide , Drew Arnold , Ronald Horner , Joseph Gillespie
IPC分类号： H01J1/50
CPC分类号： C23C14/48 , H01J37/1475 , H01J37/20 , H01J37/3171 , H01J2237/1523 , H01J2237/20214
摘要： Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.
摘要翻译：使用鼓式扫描轮的离子注入装置保持总锥角小于60°的晶片。准直的扫描的离子束，例如H +，沿着与扫描轮的旋转轴线成至少45°的角度的最终光束路径被引导。在扫描或质量分析之前，从源中提取离子并沿线性加速路径加速至高注入能量（大于500keV）。质量分析器可以位于旋转轴附近，并且不需要的离子被引导到可以安装在扫描轮上的环形光焦点。

8. 发明申请

US20120104273A1 Ion Source and a Method of Generating an Ion Beam Using an Ion Source 有权
标题翻译：离子源和使用离子源产生离子束的方法
公开(公告)号：US20120104273A1
公开(公告)日：2012-05-03
申请号：US12917510
申请日：2010-11-02
申请人： Geoffrey Ryding , Drew Arnold , William H. Park , Ronald Horner
发明人： Geoffrey Ryding , Drew Arnold , William H. Park , Ronald Horner
IPC分类号： H01J27/00
CPC分类号： H01J27/04 , H01J37/08 , H01J2237/082
摘要： Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.
摘要翻译：多个控制电极在离子源的等离子体室内沿着等离子体室的长度的各个位置处非对称地设置。选择性地偏压控制电极可以选择性地提高沿着提取狭缝的长度的相邻位置处的离子提取电流。公开了一种产生离子束的方法，其中控制沿着等离子体室的长度的不同位置处的横向电场的强度，以沿着狭缝的长度修改离子束线性电流密度分布。该方法用于控制带束束的均匀性。

9. 发明申请

US20110073781A1 ION IMPLANTATION APPARATUS 失效
标题翻译：离子植入装置
公开(公告)号：US20110073781A1
公开(公告)日：2011-03-31
申请号：US12894229
申请日：2010-09-30
申请人： William H. Leavitt , Theodore H. Smick , Joseph Daniel Gillespie , William H. Park , Paul Eide , Drew Arnold , Geoffrey Ryding
发明人： William H. Leavitt , Theodore H. Smick , Joseph Daniel Gillespie , William H. Park , Paul Eide , Drew Arnold , Geoffrey Ryding
IPC分类号： H01L21/265
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/2007 , H01J2237/201
摘要： An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.
摘要翻译：离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。晶片载体具有晶片保持栅栏，其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面，使得当晶片通过离心力推靠在散热片上时，栅栏不会向晶片边缘施加横向负载。晶片支撑表面包括弹性体材料层，并且栅栏的可移动邻接表面允许在晶片的整个区域上均匀地与散热器的热耦合。

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