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1. 发明申请

US20090296383A1 ILLUMINATION SYSTEM, SHELF-LIGHTING SYSTEM AND WALL-WASHER LIGHTING SYSTEM 审中-公开
标题翻译：照明系统，照明系统和壁挂式照明系统
公开(公告)号：US20090296383A1
公开(公告)日：2009-12-03
申请号：US11915312
申请日：2006-05-08
申请人： Adriaan Valster , Petrus Gerardus Josephus Maria Nuyens , Jozef Henricus Cornelius Hoens , Martijn Riemeijer
发明人： Adriaan Valster , Petrus Gerardus Josephus Maria Nuyens , Jozef Henricus Cornelius Hoens , Martijn Riemeijer
IPC分类号： F21V9/00 , F21V7/00
CPC分类号： F21V29/70 , A47F11/10 , F21S4/20 , F21S8/03 , F21V7/0008 , F21V7/005 , F21V7/04 , F21W2131/304 , F21W2131/405 , F21Y2101/00 , F21Y2103/00 , F21Y2103/10 , F21Y2115/10 , F25D27/00
摘要： An illumination system for illuminating an object (1) arranged in the vicinity of the illumination system. The illumination system comprises a plurality of light emitters (R, G, B) arranged along a line for emitting light substantially away from the object. A complex-shape reflector (11) is arranged in the vicinity of the plurality of light emitters for reflecting light emitted by the plurality of light emitters towards the object. In operation, light emitted by the plurality of light emitters only reaches the object via the complex-shape reflector. The complex-shape reflector is designed to obtain a substantially homogenous illumination of the object. Preferably, a characteristic dimension dle of the light emitters and a distance der between the light emitters and the complex-shape reflector meet the following relation: Formula (I).
摘要翻译：一种用于照亮布置在照明系统附近的物体（1）的照明系统。照明系统包括沿着用于发射基本远离物体的光线的多个发光体（R，G，B）。复数形状的反射器（11）被配置在多个发光体附近，用于将由多个发光体发射的光朝向物体反射。在操作中，由多个发光体发射的光仅经由复合形状的反射器到达物体。复数形反射器被设计成获得物体的基本均匀的照明。优选地，发光体的特征尺寸dle和发光体与复合形状反射体之间的距离der满足以下关系：式（I）。

2. 发明申请

US20120007130A1 ILLUMINATION DEVICE WITH REMOTE LUMINESCENT MATERIAL 有权
标题翻译：具有远红外线材料的照明装置
公开(公告)号：US20120007130A1
公开(公告)日：2012-01-12
申请号：US13256956
申请日：2010-03-17
申请人： Christoph Gerard August Hoelen , Adriaan Valster
发明人： Christoph Gerard August Hoelen , Adriaan Valster
IPC分类号： H01L33/50
CPC分类号： H01L33/504 , F21K9/64 , F21V7/05 , F21V29/505 , F21Y2115/10 , H01L33/44 , H01L33/507 , H01L33/52 , H01L33/60 , H01L33/644 , H01L2924/0002 , H01L2924/00
摘要： The invention provides an illumination device comprising a light source and a transmissive arrangement. The light source is arranged to generate light source light and comprises a light emitting device (LED), arranged to generate LED light and a carrier comprising a first luminescent material. The carrier is in contact with the LED and the first luminescent material is arranged to convert at least part of the LED light into first luminescent material light. The transmissive arrangement of a second luminescent material is arranged remote from the light source and is arranged to convert at least part of the LED light or at least part of the first luminescent material light and/or at least part of the LED light. The invention overcomes current limitations of remote luminescent material systems in spot lighting. In addition, an extremely simple way of realizing light sources with various correlated colour temperatures is allowed, based on just a single type of white (or whitish) light source in combination with various (red-orange) remote luminescent materials.
摘要翻译：本发明提供一种包括光源和透射装置的照明装置。光源被布置成产生光源光，并且包括布置成产生LED光的发光器件（LED）和包括第一发光材料的载体。载体与LED接触，并且第一发光材料布置成将至少部分LED光转换成第一发光材料光。第二发光材料的透射布置被布置成远离光源并且被布置成转换至少部分LED光或至少部分第一发光材料光和/或至少部分LED光。本发明克服了现场照明中远距离发光材料系统的局限性。另外，基于仅仅一种类型的白色（或发白）光源与各种（红 - 橙色）远程发光材料的组合，允许实现具有各种相关色温的光源的非常简单的方式。

3. 发明授权

US07943940B2 LED-array system 有权
标题翻译： LED阵列系统
公开(公告)号：US07943940B2
公开(公告)日：2011-05-17
申请号：US12599333
申请日：2008-05-05
申请人： Erik Boonekamp , Adriaan Valster
发明人： Erik Boonekamp , Adriaan Valster
IPC分类号： H01L33/00
CPC分类号： G02B6/0021 , B32B17/10036 , B32B17/10541 , B32B17/10761 , G02B6/004 , G02B6/0043 , G02B6/0068 , G02B6/0073
摘要： A LED-array system comprises at least one LED package 104 arranged on a substrate 106 provided with means for supplying the LED package 104 with a drive voltage. The LED package 104 is immersed in a supporting layer 112, and the system is characterized in that the at least one LED package 104 comprises a side-emitting LED package, for emission flight essentially parallel to a surface of the substrate 106 and that the system comprises at least one out coupling structure 116 reflecting/scattering the emitted light out of the supporting layer 112.
摘要翻译： LED阵列系统包括布置在基板106上的至少一个LED封装104，其设置有用于向LED封装104提供驱动电压的装置。 LED封装104浸没在支撑层112中，并且该系统的特征在于，至少一个LED封装104包括用于基本上平行于衬底106的表面的发射飞行的侧向发射LED封装，并且系统包括将发射的光反射/散射出支撑层112的至少一个出耦合结构116。

4. 发明申请

US20100237365A1 LED-ARRAY SYSTEM 有权
标题翻译： LED阵列系统
公开(公告)号：US20100237365A1
公开(公告)日：2010-09-23
申请号：US12599333
申请日：2008-05-05
申请人： Erik Boonekamp , Adriaan Valster
发明人： Erik Boonekamp , Adriaan Valster
IPC分类号： H01L33/48 , H01L33/60 , H01L33/62
CPC分类号： G02B6/0021 , B32B17/10036 , B32B17/10541 , B32B17/10761 , G02B6/004 , G02B6/0043 , G02B6/0068 , G02B6/0073
摘要： A LED-array system comprises at least one LED package 104 arranged on a substrate 106 provided with means for supplying the LED package 104 with a drive voltage. The LED package 104 is immersed in a supporting layer 112, and the system is characterized in that the at least one LED package 104 comprises a side-emitting LED package, for emission flight essentially parallel to a surface of the substrate 106 and that the system comprises at least one out coupling structure 116 reflecting/scattering the emitted light out of the supporting layer 112.
摘要翻译： LED阵列系统包括布置在基板106上的至少一个LED封装104，其设置有用于向LED封装104提供驱动电压的装置。 LED封装104浸没在支撑层112中，并且该系统的特征在于，至少一个LED封装104包括用于基本上平行于衬底106的表面的发射飞行的侧向发射LED封装，并且系统包括将发射的光反射/散射出支撑层112的至少一个出耦合结构116。

5. 发明授权

US5805630A Optoelectronic semiconductor device with an array of semiconductor diode lasers and method of manufacturing such a device 失效
标题翻译：具有半导体二极管激光器阵列的光电子半导体器件及其制造方法
公开(公告)号：US5805630A
公开(公告)日：1998-09-08
申请号：US273528
申请日：1994-07-11
申请人： Adriaan Valster , Carolus J. Van Der Poel , Jeroen J. L. Horikx
发明人： Adriaan Valster , Carolus J. Van Der Poel , Jeroen J. L. Horikx
IPC分类号： H01S3/23 , H01S3/06 , H01S5/00 , H01S5/024 , H01S5/323 , H01S5/40 , H01S3/18
CPC分类号： H01S5/4031 , H01S5/02461 , H01S5/32325
摘要： An array of semiconductor diode lasers (11, 12) is a very suitable radiation source for various applications such as optical read and write systems and laser printers. Such an array includes a semiconductor body (10) with a substrate (1) and a layer structure provided thereon in which at least two lasers (11, 12) are formed which are mutually separated by a groove (20). In the known array, the groove (20) reaches down into the substrate (1), so that the lasers (11, 12) are electrically separated from one another. According to the invention, the array of lasers (11, 12) is provided with a groove (20) with a major portion (d) of its depth (D) which is situated within the substrate (1). As a result of this, the lasers (11, 12) of the array show a surprisingly low crosstalk. Preferably, the portion (d) of the groove (20) situated in the substrate (1) is at least 3 .mu.m deep. The best results are obtained with depths (d) of approximately 10 up to at most 40 .mu.m. In a very favorable embodiment, the device is provided at the upper side with a comparatively thick electrically and thermally conducting layer. In a preferred embodiment, the groove (20) is formed by reactive ion etching so that the groove (20) can be narrow and deep and the lasers (11, 12) will lie close together. A plasma including SiCl.sub.4, Ar and CH.sub.4 forms a particularly suitable etchant for lasers (11, 12) in the InGaP/InAlGaP material system.
摘要翻译：一组半导体二极管激光器（11,12）是用于各种应用的非常合适的辐射源，例如光学读取和写入系统和激光打印机。这种阵列包括具有衬底（1）的半导体本体（10）和设置在其上的层结构，其中形成有由凹槽（20）相互分开的至少两个激光器（11,12）。在已知的阵列中，槽（20）向下延伸到衬底（1）中，使得激光器（11,12）彼此电分离。根据本发明，激光器阵列（11,12）设置有其深度（D）的主要部分（d）位于衬底（1）内的凹槽（20）。作为其结果，阵列的激光器（11,12）显示出惊人的低串扰。优选地，位于基板（1）中的凹槽（20）的部分（d）至少为3μm深。获得最好的结果是深度（d）大约10到最多40微米。在非常有利的实施例中，该装置在上侧设置有较厚的导电和导热层。在优选实施例中，通过反应离子蚀刻形成凹槽（20），使得凹槽（20）可以窄而深，并且激光器（11,12）将靠近在一起。包括SiCl 4，Ar和CH 4的等离子体在InGaP / InAlGaP材料系统中形成用于激光器（11,12）的特别合适的蚀刻剂。

6. 发明授权

US5468975A Optoelectronic semiconductor device 失效
标题翻译：光电半导体器件
公开(公告)号：US5468975A
公开(公告)日：1995-11-21
申请号：US352283
申请日：1994-12-08
申请人： Adriaan Valster
发明人： Adriaan Valster
IPC分类号： H01L33/00 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/22 , H01S5/223 , H01S5/3201 , H01S5/321 , H01S5/32391
摘要： An optoelectronic semiconductor device includes a first cladding layer (1) of the first conductivity type provided on a substrate (11), an active layer (2), a second cladding layer (3) of a second conductivity type, an intermediate layer (4), and a third cladding layer (5) also of the second conductivity type, the thickness of the second cladding layer (3) being such that the intermediate layer (4) lies within the optical field profile of the active layer (2), while the intermediate layer (4) includes a semiconductor material with a lower bandgap than the second (3) and third (5) cladding layers. Such devices, often in the form of diode lasers, are used inter alia in optical glass fibre communication and optical disc systems. A disadvantage of such devices is that their starting currents are comparatively high.The semiconductor material of the intermediate layer (4) has a lattice constant which is different from that of the substrate (11 ) and a bandgap which is greater than the energy of the radiation emitted by the active layer (2). As a result, the simplest possible semiconductor materials may be chosen for the intermediate layer (4), which materials have a low absorption for the emitted radiation. The starting current is reduced by this and a comparatively thick intermediate layer (4) can be used, which favors its use as an etching stopper layer. These advantages are particularly realised in devices comprising a mesa (20), such as ridge-type lasers. Ternary semiconductor materials such as InGaAs and InGaP in that case form very suitable materials for the intermediate layer (4).
摘要翻译：一种光电子半导体器件包括设置在基板（11）上的第一导电类型的第一包层（1），有源层（2），第二导电类型的第二包层（3），中间层（4））和还具有第二导电类型的第三覆层（5），第二覆层（3）的厚度使得中间层（4）位于有源层（2）的光场分布内，而中间层（4）包括具有比第二（3）和第三（5）包覆层更低的带隙的半导体材料。通常为二极管激光器形式的这种器件尤其用于光学玻璃纤维通信和光盘系统中。这种装置的缺点是它们的启动电流相对较高。中间层（4）的半导体材料具有不同于衬底（11）的晶格常数和大于由有源层（2）发射的辐射的能量的带隙。结果，可以为中间层（4）选择最简单的可能的半导体材料，该材料对于发射的辐射具有低吸收。起始电流减小，可以使用比较厚的中间层（4），这有利于其用作蚀刻阻挡层。这些优点在包括诸如脊型激光器的台面（20）的装置中特别实现。在这种情况下，诸如InGaAs和InGaP的三元半导体材料形成用于中间层（4）的非常合适的材料。

7. 发明授权

US5289483A Semiconductor device having a mesa and method of manufacturing same 失效
标题翻译：具有台面的半导体装置及其制造方法
公开(公告)号：US5289483A
公开(公告)日：1994-02-22
申请号：US883758
申请日：1992-05-15
申请人： Johannes A. De Poorter , Adriaan Valster
发明人： Johannes A. De Poorter , Adriaan Valster
IPC分类号： H01S5/00 , H01L29/06 , H01L33/00 , H01S5/022 , H01S5/042 , H01S5/223 , H01S3/19
CPC分类号： H01L33/0062 , H01L29/0657 , H01S5/2232 , H01S5/2234 , H01S5/2237
摘要： A semiconductor device includes a semiconductor structure (D3) of parallel semiconductor layers on a semiconductor substrate (1), in which layers a mesa (12) is formed which includes only a portion (D1) of the semiconductor layer structure (D3). Such devices as are useful in optoelectronic devices in which the mesa (12) forms part of a semiconductor diode laser or a radiation waveguide. During cleaving of such devices, for example for the formation of a mirror surface, damage often arises near the mesa (12), which is undesirable. The mesa (12), which projects from the device, is also easily damaged during further manipulation of the device. The semiconductor layer structure (D3) includes a sunken region (11) within which the semiconductor layer structure (D3) is at least partly recessed in the substrate (1), while the mesa (12) is positioned within the boundaries of the sunken region (11). As a result, the mesa (12) is also recessed at least partly, and thus is at least partly protected. In addition, less damage occurs near the mesa (12) during cleaving. When the mesa (12) is entirely recessed, the device is in addition particularly suitable for upside-down final mounting. In a method of making the device, a recess (11) is provided in the substrate (1) before the semiconductor layer structure (D3) and the mesa (12) therein are provided. This method is very simple and gives a high yield of devices having the required characteristics.
摘要翻译：半导体器件包括在半导体衬底（1）上的平行半导体层的半导体结构（D3），其中形成仅包含半导体层结构（D3）的一部分（D1）的台面（12）的层。这种器件可用于其中台面（12）形成半导体二极管激光器或辐射波导的一部分的光电子器件。在这种装置的切割过程中，例如为了形成镜面，经常在台面（12）附近产生损伤，这是不期望的。从设备突出的台面（12）在进一步操纵设备时也容易损坏。半导体层结构（D3）包括其中半导体层结构（D3）至少部分地凹陷在基板（1）中的凹陷区域（11），而台面（12）位于凹陷区域（11）。结果，台面（12）也至少部分地凹入，因此至少部分地被保护。此外，在裂开过程中在台面（12）附近发生较少的损伤。当台面（12）完全凹陷时，该装置另外特别适合于颠倒的最终安装。在制造该器件的方法中，在设置半导体层结构（D3）和台面（12）之前，在衬底（1）中设置凹部（11）。该方法非常简单，并且具有高产量的具有所需特性的装置。

8. 发明申请

US20120026721A1 LAMP FOR LASER APPLICATIONS 有权
标题翻译：激光应用灯
公开(公告)号：US20120026721A1
公开(公告)日：2012-02-02
申请号：US13263634
申请日：2010-04-01
申请人： Ralph Kurt , Ronald Reindert Drenten , Elvira Johanna Maria Paulussen , Adriaan Valster , Denis Fournier
发明人： Ralph Kurt , Ronald Reindert Drenten , Elvira Johanna Maria Paulussen , Adriaan Valster , Denis Fournier
IPC分类号： F21K2/00
CPC分类号： G02B6/0003 , F21K9/64 , F21S41/14 , F21S41/141 , F21S41/16 , F21S41/321 , F21S45/47 , F21V9/30 , F21Y2115/10 , F21Y2115/30 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a lamp and a method, preferably adapted for generating high power in laser applications. The lamp (1) comprises a source (3) adapted for emitting optical radiation along an optical path and a holder (5) comprising a fluorescent body (4), wherein the holder (5) is arranged in the optical path, a collecting unit (8) is provided which is adapted for transmitting at least a portion of optical radiation emitted by the fluorescent body (4) to an output of the lamp (1), and the fluorescent body (4) comprises a shape being elongated in a predetermined direction. In this way, a small spot and little divergence is provided in conjunction with good heat dissipation leading to a high optical performance.
摘要翻译：本发明涉及一种灯和方法，优选适于在激光应用中产生高功率。灯（1）包括适于沿着光路发射光辐射的源（3）和包括荧光体（4）的保持器（5），其中保持器（5）布置在光路中，收集单元（8），其适于将由荧光体（4）发射的光辐射的至少一部分传输到灯（1）的输出，并且荧光体（4）包括以预定的方式被细长的形状方向。以这种方式，结合良好的散热性提供了小的点和小的分歧，导致高的光学性能。

9. 发明申请

US20100195690A1 VERTICAL EXTENDED CAVITY SURFACE EMISSION LASER AND METHOD FOR MANUFACTURING A LIGHT EMITTING COMPONENT OF THE SAME 有权
标题翻译：垂直延伸的表面辐射激光器及其发光元件的制造方法
公开(公告)号：US20100195690A1
公开(公告)日：2010-08-05
申请号：US12530563
申请日：2008-03-10
申请人： Holger Moench , Adriaan Valster , Martin Grabherr
发明人： Holger Moench , Adriaan Valster , Martin Grabherr
IPC分类号： H01S5/14 , H01L33/48 , H01L33/60 , H01S5/183 , H01S5/02
CPC分类号： H01S5/18305 , H01S3/109 , H01S5/0215 , H01S5/0217 , H01S5/02272 , H01S5/024 , H01S5/0425 , H01S5/14
摘要： The present invention relates to a method of manufacturing the light emitting component of a VECSEL and the corresponding VECSEL. In the method a layer stack (2) is epitaxially grown on a semiconductor substrate (1). The layer stack comprises an active region (4), an upper distributed Bragg reflector (5) and a n- or p-doped current injection layer (13) arranged between the active region (4) and the semiconductor substrate (1). A mechanical support (6) or submount is bonded to an upper side of the layer stack (2) and the semiconductor substrate (1) is subsequently removed. A metallization layer (7) is optionally deposited on the lower side of the layer stack (2) and an optically transparent substrate (8) is bonded to this lower side. The proposed method allows the manufacturing of such a component in a standard manner and results in a VECSEL with a homogenous current injection and high efficiency of heat dissipation.
摘要翻译：本发明涉及一种制造VECSEL发光元件的方法及相应的VECSEL。在该方法中，在半导体衬底（1）上外延生长层堆叠（2）。层堆叠包括有源区（4），上分布布拉格反射器（5）和布置在有源区（4）和半导体衬底（1）之间的n或p掺杂电流注入层（13）。机械支撑件（6）或基座被接合到层堆叠（2）的上侧，并且随后去除半导体衬底（1）。金属化层（7）任选地沉积在层叠体（2）的下侧，并且光学透明基板（8）结合到该下层。所提出的方法允许以标准方式制造这种部件，并且产生具有均匀电流注入和高效散热的VECSEL。

10. 发明授权

US5987047A Radiation-emitting semiconductor diode and method of manufacturing 失效
标题翻译：辐射发射半导体二极管及其制造方法
公开(公告)号：US5987047A
公开(公告)日：1999-11-16
申请号：US844912
申请日：1997-04-22
申请人： Adriaan Valster , Arnoud Brouwer
发明人： Adriaan Valster , Arnoud Brouwer
IPC分类号： H01S5/00 , H01L33/30 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01L33/30 , H01S5/20 , H01S5/32325 , H01S5/2009 , H01S5/2231 , H01S5/3211
摘要： A radiation-emitting semiconductor diode in the InGaP/InAlGaP material system having a barrier for charge carriers situated between the active layer and one of the cladding layers. Such a diode has an emission wavelength between 0.6 and 0.7 .mu.m and is particularly suitable, when constructed as a diode laser, for serving as a radiation source in, for example, a system for reading and/or writing of optical discs, also because of an increased efficiency. The diode includes a barrier layer comprising only a single barrier layer of AlP, which can be manufactured with a good reproducibility and high yield. A thin AlP barrier layer, having a thickness less than 5 nm, for example 2.5 nm, still provides an excellent barrier.
摘要翻译： InGaP / InAlGaP材料体系中的辐射发射半导体二极管具有位于有源层和一个包覆层之间的电荷载流子的势垒。这种二极管的发射波长在0.6和0.7μm之间，特别适用于当构成二极管激光器时用作例如用于读取和/或写入光盘的系统中的辐射源，也因为提高效率。二极管包括仅包含单个AlP阻挡层的阻挡层，其可以以良好的再现性和高产率制造。具有厚度小于5nm（例如2.5nm）的薄AlP阻挡层仍然提供优异的屏障。

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