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1. 发明授权

US4899205A Electrically-programmable low-impedance anti-fuse element 失效
标题翻译：电子可编程低阻抗保险丝元件
公开(公告)号：US4899205A
公开(公告)日：1990-02-06
申请号：US137935
申请日：1987-12-28
申请人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum
发明人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum
IPC分类号： G11C17/14 , G11C16/04 , G11C17/00 , H01L21/82 , H01L21/822 , H01L21/8247 , H01L23/525 , H01L27/04 , H01L27/10 , H01L27/112 , H01L27/115
CPC分类号： H01L27/112 , H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath. At least one of the two electrodes of each anti-fuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer. This arsenic will combine with other material and flow into the anti-fuse filament after programmed to form a low resistance controllable anti-fuse link. Circuitry is provided which allows the anti-fuse of the present invention to be programmed by application of a suitable programming voltage to input-output pins of the integrated circuit containing the anti-fuse. Where more than one anti-fuse is to be programmed using the programming voltage applied at the input-output terminals, other additional input-output terminals may serve as address inputs to specify the anti-fuse to be programmed.In another embodiment of the present invention a programmable read-only memory array comprised of memory cells including an anti-fuse in combination with a single transistor. X-address and Y-address decoder circuits are provided to both program and read the contents of any selected memory cell in the array.
摘要翻译：公开了电可编程的低阻抗抗熔丝，其具有电容器状结构，在编程之前具有非常低的泄漏并且在编程之后具有低电阻。本发明的电气可编程低阻抗熔断器包括第一导电电极，其可以形成为半导体衬底中的扩散区域，或者可以由诸如多晶硅的半导体材料形成，位于上部并与之绝缘的半导体材料基质。在优选实施例中，介电层包括第一层二氧化硅，第二层氮化硅和第三层二氧化硅，设置在第一电极上。第二电极由诸如多晶硅的半导体材料或在其下方具有阻挡金属的金属在电介质层上形成。每个反熔丝的两个电极中的至少一个被高度掺杂或注入砷，使得高浓度的砷存在于电极和电介质层之间的界面处。这种砷将与其他材料结合并经编程后流入反熔丝，以形成低电阻可控的反熔丝链。提供电路，其允许通过向包含反熔丝的集成电路的输入输出引脚施加合适的编程电压来编程本发明的反熔丝。在使用输入 - 输出端子上施加的编程电压对多个反熔丝进行编程的情况下，其他附加输入 - 输出端可用作地址输入，以指定要编程的反熔丝。在本发明的另一个实施例中，可编程只读存储器阵列由包括与单个晶体管组合的反熔丝的存储单元组成。提供X地址和Y地址解码器电路来编程和读取阵列中任何选定存储单元的内容。

2. 发明授权

US5134457A Programmable low-impedance anti-fuse element 失效
标题翻译：可编程低阻抗保险丝元件
公开(公告)号：US5134457A
公开(公告)日：1992-07-28
申请号：US464223
申请日：1990-01-12
申请人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum
发明人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath. At least one of the two electrodes of each anti-fuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer. This arsenic will combine with other material and flow into the anti-fuse filament after programmed to form a low resistance controllable anti-fuse link. Circuitry is provided which allows the anti-fuse of the present invention to be programmed by application of a suitable programming voltage to input-output pins of the integrated circuit containing the anti-fuse. Where more than one anti-fuse is to be programmed using the programming voltage applied at the input-output terminals, other additional input-output terminals may serve as address inputs to specify the anti-fuse to be programmed.
摘要翻译：公开了电可编程的低阻抗抗熔丝，其具有电容器状结构，在编程之前具有非常低的泄漏并且在编程之后具有低电阻。本发明的电气可编程低阻抗熔断器包括第一导电电极，其可以形成为半导体衬底中的扩散区域，或者可以由诸如多晶硅的半导体材料形成，位于上部并与之绝缘的半导体材料基质。在优选实施例中，介电层包括第一层二氧化硅，第二层氮化硅和第三层二氧化硅，设置在第一电极上。第二电极由诸如多晶硅的半导体材料或在其下方具有阻挡金属的金属在电介质层上形成。每个反熔丝的两个电极中的至少一个被高度掺杂或注入砷，使得高浓度的砷存在于电极和电介质层之间的界面处。这种砷将与其他材料结合并经编程后流入反熔丝，以形成低电阻可控的反熔丝链。提供电路，其允许通过向包含反熔丝的集成电路的输入输出引脚施加合适的编程电压来编程本发明的反熔丝。在使用输入 - 输出端子上施加的编程电压对多个反熔丝进行编程的情况下，其他附加输入 - 输出端可用作地址输入，以指定要编程的反熔丝。

3. 发明授权

US4823181A Programmable low impedance anti-fuse element 失效
标题翻译：可编程低阻抗熔丝元件
公开(公告)号：US4823181A
公开(公告)日：1989-04-18
申请号：US861519
申请日：1986-05-09
申请人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCullum
发明人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCullum
IPC分类号： G11C17/06 , H01L21/8246 , H01L23/525 , H01L27/112 , H01L29/52 , H01L27/10 , H01L29/04 , H01L29/92
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.
摘要翻译：公开了一种电可编程低阻抗电路元件，其具有在编程之前具有非常低的泄漏并且在编程之后具有低电阻的电容器状结构。本发明的电可编程低阻抗电路元件包括可由金属或半导体材料形成的下导电电极，绝缘层，其在优选实施例中包括第一层二氧化硅，第二层硅氮化物和第三层二氧化硅。由具有相同导电类型的下部电极的金属或半导体材料形成的上部电极或两者的三明治完成了该结构。

4. 发明授权

US5266829A Electrically-programmable low-impedance anti-fuse element 失效
标题翻译：电子可编程低阻抗保险丝元件
公开(公告)号：US5266829A
公开(公告)日：1993-11-30
申请号：US910422
申请日：1992-07-08
申请人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum , Shih-Ou Chen , Steve S. Chiang
发明人： Esmat Z. Hamdy , Amr M. Mohsen , John L. McCullum , Shih-Ou Chen , Steve S. Chiang
IPC分类号： H01L23/525 , H01L27/06 , H01L27/08
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or a metal having a barrier metal underneath. At least one of the two electrodes of each anti-fuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer. This arsenic will combine with other material and flow into the anti-fuse filament after programmed to form a low resistance controllable anti-fuse link. Circuitry is provided which allows the anti-fuse of the present invention to be programmed by application of a suitable programming voltage to input-output pins of the integrated circuit containing the antifuse. Where more than one anti-fuse is to be programmed using the programming voltage applied at the input-output terminals, other additional input-output terminals may serve as address inputs to specify the anti-fuse to be programmed.
摘要翻译：公开了电可编程的低阻抗抗熔丝，其具有电容器状结构，在编程之前具有非常低的泄漏并且在编程之后具有低电阻。本发明的电可编程低阻抗反熔丝包括可以形成为半导体衬底中的扩散区域的第一导电电极，或者可以由位于衬底上方并与衬底绝缘的半导体材料（例如多晶硅）形成。在优选实施例中，介电层包括第一层二氧化硅，第二层氮化硅和第三层二氧化硅，设置在第一电极上。第二电极由诸如多晶硅的半导体材料或在其下方具有阻挡金属的金属在电介质层上形成。每个反熔丝的两个电极中的至少一个被高度掺杂或注入砷，使得高浓度的砷存在于电极和电介质层之间的界面处。这种砷将与其他材料结合并经编程后流入反熔丝，以形成低电阻可控的反熔丝链。提供电路，其允许通过对包含反熔丝的集成电路的输入输出引脚施加合适的编程电压来编程本发明的反熔丝。在使用输入 - 输出端子上施加的编程电压对多个反熔丝进行编程的情况下，其他附加输入 - 输出端可用作地址输入，以指定要编程的反熔丝。

5. 发明授权

US4943538A Programmable low impedance anti-fuse element 失效
标题翻译：可编程低阻抗熔丝元件
公开(公告)号：US4943538A
公开(公告)日：1990-07-24
申请号：US166324
申请日：1988-03-10
申请人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCullum
发明人： Amr M. Mohsen , Esmat Z. Hamdy , John L. McCullum
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.
摘要翻译：公开了一种电可编程低阻抗电路元件，其具有在编程之前具有非常低的泄漏并且在编程之后具有低电阻的电容器状结构。本发明的电可编程低阻抗电路元件包括可由金属或半导体材料形成的下导电电极，绝缘层，其在优选实施例中包括第一层二氧化硅，第二层硅氮化物和第三层二氧化硅。由具有相同导电类型的下部电极的金属或半导体材料形成的上部电极或两者的三明治完成了该结构。

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