专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080011601A1 COOLED ANODES 审中-公开
标题翻译：冷却阳极
公开(公告)号：US20080011601A1
公开(公告)日：2008-01-17
申请号：US11771366
申请日：2007-06-29
申请人： ALLEN KA-LING LAU , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
发明人： ALLEN KA-LING LAU , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/32724 , H01J37/34 , H01J37/3438 , H01J37/3455
摘要： A physical vapor deposition (PVD) apparatus and a PVD method are disclosed. Extending an anode across the processing space between the target and the substrate may increase deposition uniformity on a substrate. The anode provides a path to ground for electrons that are excited in the plasma and may uniformly distribute the electrons within the plasma across the processing space rather than collect at the chamber walls. The uniform distribution of the electrons within the plasma may create a uniform deposition of material on the substrate. The anodes may be cooled with a cooling fluid to control the temperature of the anodes and reduce flaking. The anodes may be disposed across the process space perpendicular to the long side of a magnetron that may scan in two dimensions across the back of the sputtering target. The scanning magnetron may reduce localized heating of the anode.
摘要翻译：公开了物理气相沉积（PVD）装置和PVD方法。将阳极延伸穿过靶和衬底之间的处理空间可增加衬底上的沉积均匀性。阳极为在等离子体中被激发的电子提供到地面的路径，并且可以将等离子体内的电子均匀地分布在处理空间中，而不是在室壁处收集。电子在等离子体内的均匀分布可能会在衬底上产生均匀的材料沉积。阳极可以用冷却流体冷却以控制阳极的温度并减少剥落。阳极可以跨过垂直于磁控管的长边的处理空间，其可以跨过溅射靶的背面的二维扫描。扫描磁控管可以减少阳极的局部加热。

2. 发明申请

US20120000773A1 REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
标题翻译：氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射
公开(公告)号：US20120000773A1
公开(公告)日：2012-01-05
申请号：US13231182
申请日：2011-09-13
申请人： Yan Ye , Ankur Kadam , Yanping Li , Allen Ka-Ling Lau , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
发明人： Yan Ye , Ankur Kadam , Yanping Li , Allen Ka-Ling Lau , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/0063 , C23C14/35 , H01J37/3244 , H01J37/34 , H01J37/3438
摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
摘要翻译：本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

3. 发明授权

US08961756B2 Ganged scanning of multiple magnetrons, especially two level folded magnetrons 有权
标题翻译：组合扫描多个磁控管，特别是两个级别的磁控管
公开(公告)号：US08961756B2
公开(公告)日：2015-02-24
申请号：US11780757
申请日：2007-07-20
申请人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
发明人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
摘要翻译：磁控管组件包括一个或多个磁控管，每个磁控管在靶的溅射面上形成封闭的等离子体环。目标可以包括多个条带目标，相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。带状磁控管可以是两级折叠磁控管，其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环，并且其端部在目标的中间相遇。形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案，其中在角附近提供额外的磁体位置以引导等离子体轨道。多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上，并且单独部分地由一个或多个靶的背面上的辊支撑。

4. 发明申请

US20080006523A1 COOLED PVD SHIELD 审中-公开
标题翻译：冷却PVD膜
公开(公告)号：US20080006523A1
公开(公告)日：2008-01-10
申请号：US11764217
申请日：2007-06-17
申请人： Akihiro Hosokawa , Bradley O. Stimson , Hienminh Huu Le , Makoto Inagawa
发明人： Akihiro Hosokawa , Bradley O. Stimson , Hienminh Huu Le , Makoto Inagawa
IPC分类号： C23C16/00 , C23C14/32
CPC分类号： C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32458 , H01J37/32623 , H01J37/32651 , H01J37/32715
摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
摘要翻译：本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。

5. 发明授权

US07815782B2 PVD target 有权
标题翻译： PVD目标
公开(公告)号：US07815782B2
公开(公告)日：2010-10-19
申请号：US11426271
申请日：2006-06-23
申请人： Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa , Hienminh Huu Le , Jrjyan Jerry Chen
发明人： Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa , Hienminh Huu Le , Jrjyan Jerry Chen
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.
摘要翻译：物理气相沉积靶组件被配置为将目标结合层与处理区域隔离。在一个实施例中，目标组件包括背板，具有第一表面和第二表面的靶，以及设置在背板和第二表面之间的结合层。目标的第一表面与处理区域流体接触，并且目标物的第二表面朝向背板取向。目标组件可以包括多个目标。

6. 发明申请

US20070295598A1 Backing plate assembly 审中-公开
标题翻译：背板组件
公开(公告)号：US20070295598A1
公开(公告)日：2007-12-27
申请号：US11483134
申请日：2006-07-07
申请人： Makoto Inagawa , Hienminh Huu Le , Bradley O. Stimson , Akihiro Hosokawa
发明人： Makoto Inagawa , Hienminh Huu Le , Bradley O. Stimson , Akihiro Hosokawa
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
摘要翻译：在某些实施例中，本发明包括用于容纳大面积溅射靶的背板。背板组件具有雕刻到背板的后表面中的腔体。背板还可以包括穿过背板的冷却通道，以控制背板和靶的温度。空腔可以填充具有比背板更低密度的材料。此外，整个后表面可以被材料覆盖以产生光滑表面，在PVD过程中磁控管可在该光滑表面上移动。

7. 发明授权

US09222165B2 Cooled PVD shield 有权
标题翻译：冷却PVD屏蔽
公开(公告)号：US09222165B2
公开(公告)日：2015-12-29
申请号：US13353136
申请日：2012-01-18
申请人： Akihiro Hosokawa , Bradley O. Stimson , Hienminh Huu Le , Makoto Inagawa
发明人： Akihiro Hosokawa , Bradley O. Stimson , Hienminh Huu Le , Makoto Inagawa
IPC分类号： C23C14/34 , C23C14/04 , H01J37/32 , C23C14/50 , C23C14/56
CPC分类号： C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32458 , H01J37/32623 , H01J37/32651 , H01J37/32715
摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
摘要翻译：本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。

8. 发明申请

US20080067058A1 MONOLITHIC TARGET FOR FLAT PANEL APPLICATION 审中-公开
标题翻译：平板应用的单目标
公开(公告)号：US20080067058A1
公开(公告)日：2008-03-20
申请号：US11852136
申请日：2007-09-07
申请人： BRADLEY O. STIMSON , Akihiro Hosokawa , Makoto Inagawa
发明人： BRADLEY O. STIMSON , Akihiro Hosokawa , Makoto Inagawa
IPC分类号： C23C14/14 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/3435
摘要： The present invention generally comprises a monolithic sputtering target assembly for depositing material onto large area substrates. The sputtering target assembly may comprise both the sputtering target and the backing plate in one monolithic structure. By having the backing plate and sputtering target as a monolithic structure, bonding is not necessary. Additionally, cooling channels may be drilled into the monolithic structure so that cooling fluid may flow within the sputtering target assembly without the need for a separate cooling assembly resting on back of the sputtering target assembly.
摘要翻译：本发明通常包括用于将材料沉积到大面积基板上的单片溅射靶组件。溅射靶组件可以包括一个整体结构的溅射靶和背板两者。通过将背板和溅射靶作为整体结构，不需要结合。此外，可以将冷却通道钻入单片结构中，使得冷却流体可以在溅射靶组件内流动，而不需要在溅射靶组件的背面上放置单独的冷却组件。

9. 发明申请

US20070295596A1 PVD TARGET 有权
标题翻译： PVD目标
公开(公告)号：US20070295596A1
公开(公告)日：2007-12-27
申请号：US11426271
申请日：2006-06-23
申请人： Makoto INAGAWA , Bradley O. Stimson , Akihiro Hosokawa , Hienminh Huu Le , Jrjyan Jerry Chen
发明人： Makoto INAGAWA , Bradley O. Stimson , Akihiro Hosokawa , Hienminh Huu Le , Jrjyan Jerry Chen
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.
摘要翻译：物理气相沉积靶组件被配置为将目标结合层与处理区域隔离。在一个实施例中，目标组件包括背板，具有第一表面和第二表面的靶，以及设置在背板和第二表面之间的结合层。目标的第一表面与处理区域流体接触，并且目标物的第二表面朝向背板取向。目标组件可以包括多个目标。

10. 发明授权

US07442900B2 Chamber for uniform heating of large area substrates 失效
标题翻译：用于均匀加热大面积基材的室
公开(公告)号：US07442900B2
公开(公告)日：2008-10-28
申请号：US11396477
申请日：2006-04-03
申请人： Makoto Inagawa , Akihiro Hosokawa
发明人： Makoto Inagawa , Akihiro Hosokawa
IPC分类号： F27B5/14 , C23C16/00 , C23C16/54 , H01L21/324
CPC分类号： H01L21/67109 , C23C16/54 , F27B17/0025
摘要： Embodiments of the present invention generally provide an apparatus for providing a uniform thermal profile to a plurality of large area substrates during thermal processing. In one embodiment, an apparatus for thermal processing large area substrates includes a chamber having a plurality of processing zones disposed therein that are coupled to a lift mechanism. The lift mechanism is adapted to vertically position the plurality of processing zones within the chamber. Each processing zone further includes an upper heated plate, a lower heated plate adapted to support a first substrate thereon and an unheated plate adapted to support a second substrate thereon, wherein the unheated plate is disposed between the upper and lower heated plates.
摘要翻译：本发明的实施例通常提供一种用于在热处理期间向多个大面积基板提供均匀热分布的装置。在一个实施例中，用于热处理大面积基板的装置包括具有设置在其中的多个处理区域的室，其联接到升降机构。提升机构适于将多个处理区域垂直地定位在室内。每个处理区还包括上加热板，适于在其上支撑第一基板的下加热板和适于在其上支撑第二基板的未加热板，其中未加热板设置在上加热板和下加热板之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式