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1. 发明申请

US20190273493A1 SWITCHING OF PARALLELED REVERSE CONDUCTING IGBT AND WIDE BANDGAP SWITCH 审中-公开
公开(公告)号：US20190273493A1
公开(公告)日：2019-09-05
申请号：US16411716
申请日：2019-05-14
申请人： ABB Schweiz AG
发明人： Umamaheswara Vemulapati , Ulrich Schlapbach , Munaf Rahimo
IPC分类号： H03K17/567 , H03K17/687
摘要： A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET

2. 发明授权

US10566463B2 Power semiconductor device with floating field ring termination 有权
公开(公告)号：US10566463B2
公开(公告)日：2020-02-18
申请号：US16420803
申请日：2019-05-23
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati , Marco Bellini
IPC分类号： H01L29/06 , H01L29/861 , H01L29/868
摘要： In a power semiconductor device of the application a total number n of floating field rings (10_1 to 10_n) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation di,i−i between an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (10_1 to 10_n) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: di,i−1=d1,0+Σj=1j=i−1 Δj for i=2 to n, wherein d1,0 is a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δzone1−0.05·Δzone2 0.1 μm, and −Δzone2/2

3. 发明申请

US20200006496A1 SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20200006496A1
公开(公告)日：2020-01-02
申请号：US16558935
申请日：2019-09-03
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Lars Knoll , Marco Bellini , Renato Minamisawa , Umamaheswara Vemulapati
IPC分类号： H01L29/16 , H01L29/06 , H01L29/78 , H01L29/66
摘要： A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.

4. 发明申请

US20180040526A1 POWER SEMICONDUCTOR MODULE 审中-公开
公开(公告)号：US20180040526A1
公开(公告)日：2018-02-08
申请号：US15666858
申请日：2017-08-02
申请人： ABB Schweiz AG , Audi AG
发明人： Jürgen Schuderer , Umamaheswara Vemulapati , Marco Bellini , Jan Vobecky
IPC分类号： H01L23/14 , H01L25/18 , H01L23/538 , H01L29/06 , H01L23/535
CPC分类号： H01L23/147 , H01L23/36 , H01L23/3736 , H01L23/535 , H01L23/5386 , H01L23/62 , H01L25/072 , H01L25/18 , H01L29/0634 , H01L29/0646 , H01L2224/16227 , H01L2224/48091 , H01L2224/48227 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2924/00014 , H01L2924/10252 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/1301 , H01L2924/1304 , H01L2224/32225 , H01L2924/00012 , H01L2224/45099
摘要： A power semiconductor module including at least one power semiconductor chip providing a power electronics switch; and a semiconductor wafer, to which the at least one power semiconductor chip is bonded; wherein the semiconductor wafer is doped, such that it includes a field blocking region and an electrically conducting region on the field blocking region, to which electrically conducting region the at least one power semiconductor chip is bonded.

5. 发明授权

US10629677B2 Area efficient floating field ring termination 有权
公开(公告)号：US10629677B2
公开(公告)日：2020-04-21
申请号：US15991240
申请日：2018-05-29
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati
IPC分类号： H01L29/06 , H01L29/16 , H01L29/36 , H01L29/861 , H01L29/739 , H01L29/808 , H01L29/20 , H01L29/868
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/36 , H01L29/8611 , H01L29/2003 , H01L29/7395 , H01L29/8083 , H01L29/868
摘要： A high power semiconductor device with a floating field ring termination includes a wafer, wherein a plurality of floating field rings is formed in an edge termination region adjacent to a first main side surface of the wafer. At least in the termination region a drift layer, in which the floating field rings are formed, includes a surface layer and a bulk layer wherein the surface layer is formed adjacent to the first main side surface to separate the bulk layer from the first main side surface and has an average doping concentration which is less than 50% of the minimum doping concentration of the bulk layer. The drift layer includes a plurality of enhanced doping regions, wherein each one of the enhanced doping regions is in direct contact with a corresponding one of the floating field rings at least on a lateral side of this floating field ring, which faces towards the active region. The relatively low doped surface layer and the enhanced doping regions increase the electric field coupling from floating field ring to floating field ring, thus allowing an area efficient termination structure. Each enhanced doping region extends to at least the same depth as the one of the corresponding floating field ring.

6. 发明授权

US10461157B2 Flat gate commutated thyristor 有权
公开(公告)号：US10461157B2
公开(公告)日：2019-10-29
申请号：US15918581
申请日：2018-03-12
申请人： ABB Schweiz AG
发明人： Martin Arnold , Umamaheswara Vemulapati
IPC分类号： H01L29/74 , H01L29/10 , H01L29/36 , H01L29/744 , H01L29/08 , H01L29/06 , H01L29/417 , H01L29/66 , H01L29/745
摘要： The invention relates to a turn-off power semiconductor device comprising a plurality of thyristor cells, each thyristor cell comprising a cathode region; a base layer; a drift layer; an anode layer; a gate electrode which is arranged lateral to the cathode region in contact with the base layer; a cathode electrode; and an anode electrode. Interfaces between the cathode regions and the cathode electrodes as well as interfaces between the base layers and the gate electrodes of the plurality of thyristor cells are flat and coplanar. In addition, the base layer includes a gate well region extending from its contact with the gate electrode to a depth, which is at least half of the depth of the cathode region, wherein, for any depth, the minimum doping concentration of the gate well region at this depth is 50% above a doping concentration of the base layer between the cathode region and the gate well region at this depth and at a lateral position, which has in an orthogonal projection onto a plane parallel to the first main side a distance of 2 μm from the cathode region. The base layer includes a compensated region of the second conductivity type, the compensated region being arranged directly adjacent to the first main side and between the cathode region and the gate well region, wherein the density of first conductivity type impurities relative to the net doping concentration in the compensated region is at least 0.4.

7. 发明申请

US20190035884A1 AREA EFFICIENT FLOATING FIELD RING TERMINATION 审中-公开
公开(公告)号：US20190035884A1
公开(公告)日：2019-01-31
申请号：US15991240
申请日：2018-05-29
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati
IPC分类号： H01L29/06 , H01L29/16
摘要： A high power semiconductor device with a floating field ring termination includes a wafer, wherein a plurality of floating field rings is formed in an edge termination region adjacent to a first main side surface of the wafer. At least in the termination region a drift layer, in which the floating field rings are formed, includes a surface layer and a bulk layer wherein the surface layer is formed adjacent to the first main side surface to separate the bulk layer from the first main side surface and has an average doping concentration which is less than 50% of the minimum doping concentration of the bulk layer. The drift layer includes a plurality of enhanced doping regions, wherein each one of the enhanced doping regions is in direct contact with a corresponding one of the floating field rings at least on a lateral side of this floating field ring, which faces towards the active region. The relatively low doped surface layer and the enhanced doping regions increase the electric field coupling from floating field ring to floating field ring, thus allowing an area efficient termination structure. Each enhanced doping region extends to at least the same depth as the one of the corresponding floating field ring.

8. 发明申请

US20180204913A1 FLAT GATE COMMUTATED THYRISTOR 审中-公开
公开(公告)号：US20180204913A1
公开(公告)日：2018-07-19
申请号：US15918581
申请日：2018-03-12
申请人： ABB Schweiz AG
发明人： Martin Arnold , Umamaheswara Vemulapati
IPC分类号： H01L29/10 , H01L29/745 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/66
CPC分类号： H01L29/1066 , H01L29/0692 , H01L29/0696 , H01L29/0839 , H01L29/102 , H01L29/36 , H01L29/41716 , H01L29/66363 , H01L29/66393 , H01L29/744 , H01L29/745
摘要： The invention relates to a turn-off power semiconductor device comprising a plurality of thyristor cells, each thyristor cell comprising a cathode region; a base layer; a drift layer; an anode layer; a gate electrode which is arranged lateral to the cathode region in contact with the base layer; a cathode electrode; and an anode electrode. Interfaces between the cathode regions and the cathode electrodes as well as interfaces between the base layers and the gate electrodes of the plurality of thyristor cells are flat and coplanar. In addition, the base layer includes a gate well region extending from its contact with the gate electrode to a depth, which is at least half of the depth of the cathode region, wherein, for any depth, the minimum doping concentration of the gate well region at this depth is 50% above a doping concentration of the base layer between the cathode region and the gate well region at this depth and at a lateral position, which has in an orthogonal projection onto a plane parallel to the first main side a distance of 2 μm from the cathode region. The base layer includes a compensated region of the second conductivity type, the compensated region being arranged directly adjacent to the first main side and between the cathode region and the gate well region, wherein the density of first conductivity type impurities relative to the net doping concentration in the compensated region is at least 0.4.

9. 发明申请

US20190288124A1 POWER SEMICONDUCTOR DEVICE WITH FLOATING FIELD RING TERMINATION 审中-公开
公开(公告)号：US20190288124A1
公开(公告)日：2019-09-19
申请号：US16420803
申请日：2019-05-23
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati , Marco Bellini
IPC分类号： H01L29/861 , H01L29/868 , H01L29/06
摘要： In a power semiconductor device of the application a total number n of floating field rings (10_1 to 10_n) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation di,1−i between an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (10_1 to 10_n) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: di,i−1=d1,0+Σj=1j=i−1 Δj for i=2 to n, wherein d1,0 is a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δzone1−0.05·Δzone2

10. 发明授权

US10026732B2 Bidirectional power semiconductor 有权
公开(公告)号：US10026732B2
公开(公告)日：2018-07-17
申请号：US15626777
申请日：2017-06-19
申请人： ABB Schweiz AG
发明人： Munaf Rahimo , Martin Arnold , Umamaheswara Vemulapati
IPC分类号： H01L29/747 , H01L27/08 , H01L29/74 , H01L29/06
摘要： A bidirectional power semiconductor device with full turn-off control in both current directions and improved electrical and thermal properties is provided, the device comprises a plurality of first gate commutated thyristor (GCT) cells and a plurality of second GCT cells alternating with each other, a first base layer of each first GCT cell is separated from a neighbouring second anode layer of a neighbouring second GCT cell by a first separation region, and a second base layer of each second GCT cell is separated from a neighbouring first anode layer of a neighbouring first GCT cell by a second separation region.

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