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1. 发明授权

US10629677B2 Area efficient floating field ring termination 有权
公开(公告)号：US10629677B2
公开(公告)日：2020-04-21
申请号：US15991240
申请日：2018-05-29
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati
IPC分类号： H01L29/06 , H01L29/16 , H01L29/36 , H01L29/861 , H01L29/739 , H01L29/808 , H01L29/20 , H01L29/868
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/36 , H01L29/8611 , H01L29/2003 , H01L29/7395 , H01L29/8083 , H01L29/868
摘要： A high power semiconductor device with a floating field ring termination includes a wafer, wherein a plurality of floating field rings is formed in an edge termination region adjacent to a first main side surface of the wafer. At least in the termination region a drift layer, in which the floating field rings are formed, includes a surface layer and a bulk layer wherein the surface layer is formed adjacent to the first main side surface to separate the bulk layer from the first main side surface and has an average doping concentration which is less than 50% of the minimum doping concentration of the bulk layer. The drift layer includes a plurality of enhanced doping regions, wherein each one of the enhanced doping regions is in direct contact with a corresponding one of the floating field rings at least on a lateral side of this floating field ring, which faces towards the active region. The relatively low doped surface layer and the enhanced doping regions increase the electric field coupling from floating field ring to floating field ring, thus allowing an area efficient termination structure. Each enhanced doping region extends to at least the same depth as the one of the corresponding floating field ring.

2. 发明授权

US09659927B2 Junction barrier Schottky rectifier 有权
公开(公告)号：US09659927B2
公开(公告)日：2017-05-23
申请号：US14971206
申请日：2015-12-16
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Andrei Mihaila
IPC分类号： H01L29/00 , H01L27/08 , H01L29/36 , H01L29/872 , H01L29/06 , H01L29/10 , H01L29/66 , H01L29/16
CPC分类号： H01L27/0814 , H01L29/0619 , H01L29/0649 , H01L29/0688 , H01L29/1095 , H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/872
摘要： A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon.

3. 发明申请

US20190288124A1 POWER SEMICONDUCTOR DEVICE WITH FLOATING FIELD RING TERMINATION 审中-公开
公开(公告)号：US20190288124A1
公开(公告)日：2019-09-19
申请号：US16420803
申请日：2019-05-23
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati , Marco Bellini
IPC分类号： H01L29/861 , H01L29/868 , H01L29/06
摘要： In a power semiconductor device of the application a total number n of floating field rings (10_1 to 10_n) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation di,1−i between an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (10_1 to 10_n) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: di,i−1=d1,0+Σj=1j=i−1 Δj for i=2 to n, wherein d1,0 is a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δzone1−0.05·Δzone2

4. 发明申请

US20190035884A1 AREA EFFICIENT FLOATING FIELD RING TERMINATION 审中-公开
公开(公告)号：US20190035884A1
公开(公告)日：2019-01-31
申请号：US15991240
申请日：2018-05-29
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati
IPC分类号： H01L29/06 , H01L29/16
摘要： A high power semiconductor device with a floating field ring termination includes a wafer, wherein a plurality of floating field rings is formed in an edge termination region adjacent to a first main side surface of the wafer. At least in the termination region a drift layer, in which the floating field rings are formed, includes a surface layer and a bulk layer wherein the surface layer is formed adjacent to the first main side surface to separate the bulk layer from the first main side surface and has an average doping concentration which is less than 50% of the minimum doping concentration of the bulk layer. The drift layer includes a plurality of enhanced doping regions, wherein each one of the enhanced doping regions is in direct contact with a corresponding one of the floating field rings at least on a lateral side of this floating field ring, which faces towards the active region. The relatively low doped surface layer and the enhanced doping regions increase the electric field coupling from floating field ring to floating field ring, thus allowing an area efficient termination structure. Each enhanced doping region extends to at least the same depth as the one of the corresponding floating field ring.

5. 发明授权

US10566463B2 Power semiconductor device with floating field ring termination 有权
公开(公告)号：US10566463B2
公开(公告)日：2020-02-18
申请号：US16420803
申请日：2019-05-23
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Umamaheswara Vemulapati , Marco Bellini
IPC分类号： H01L29/06 , H01L29/861 , H01L29/868
摘要： In a power semiconductor device of the application a total number n of floating field rings (10_1 to 10_n) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation di,i−i between an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (10_1 to 10_n) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: di,i−1=d1,0+Σj=1j=i−1 Δj for i=2 to n, wherein d1,0 is a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δzone1−0.05·Δzone2 0.1 μm, and −Δzone2/2

6. 发明申请

US20200006496A1 SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20200006496A1
公开(公告)日：2020-01-02
申请号：US16558935
申请日：2019-09-03
申请人： ABB Schweiz AG
发明人： Friedhelm Bauer , Lars Knoll , Marco Bellini , Renato Minamisawa , Umamaheswara Vemulapati
IPC分类号： H01L29/16 , H01L29/06 , H01L29/78 , H01L29/66
摘要： A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.

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