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    • 9. 发明授权
    • Method and system for providing a laser submount for an energy assisted magnetic recording head
    • 提供用于能量辅助磁记录头的激光基座的方法和系统
    • US08518748B1
    • 2013-08-27
    • US13172583
    • 2011-06-29
    • Lei WangZongrong LiuPezhman Monadgemi
    • Lei WangZongrong LiuPezhman Monadgemi
    • H01L21/00
    • H01L23/49811B23K26/364B23K26/40B23K2103/50G11B5/314G11B7/12G11B2005/0021H01L2924/0002H01L2924/00
    • A method and system for providing a laser diode submount for use in an energy assisted magnetic recording disk drive are described. A portion of a silicon substrate is removed, forming trenches therein. Each trench has sidewalls, surrounds a silicon island corresponding to a laser diode submount, and corresponds to a thickness of the laser diode submount. The silicon island has a top surface and a facets corresponding to the trench sidewalls. Insulator(s) for the top surface and facets of the silicon island are provided. Metallization is provided on the top surface and facets of the silicon island. A first portion of the metallization on the top surface corresponds to under bump metal (UBM) for solder pad(s). A second portion of the metallization corresponds to electrical traces. Solder pad(s) are provided on the UBM. The silicon island is released from the silicon substrate.
    • 描述了一种用于提供用于能量辅助磁记录盘驱动器中的激光二极管基座的方法和系统。 去除一部分硅衬底,在其中形成沟槽。 每个沟槽具有侧壁,围绕对应于激光二极管基座的硅岛,并且对应于激光二极管基座的厚度。 硅岛具有顶表面和对应于沟槽侧壁的面。 提供了用于硅岛顶表面和小平面的绝缘体。 在硅岛的顶表面和小平面上提供金属化。 顶表面上的金属化的第一部分对应于用于焊盘的下凸块金属(UBM)。 金属化的第二部分对应于电迹线。 焊盘在UBM上提供。 硅岛从硅衬底释放出来。
    • 10. 发明申请
    • Magnetoresistive random access memory cell with independently operating read and write components
    • 具有独立操作的读写组件的磁阻随机存取存储单元
    • US20130114334A1
    • 2013-05-09
    • US13288860
    • 2011-11-03
    • Ge YiShaoping LiDong LiYunjun TangZongrong Liu
    • Ge YiShaoping LiDong LiYunjun TangZongrong Liu
    • G11C11/15
    • H01L43/08G11C11/16G11C11/161G11C11/1675
    • A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.
    • 提出了一类新的存储单元。 有两个分离的脉冲数据写入和感测电流路径。 面内脉冲电流用于翻转夹在重金属写入载流层和电介质层之间的垂直各向异性数据存储层的磁化方向。 数据存储层内的磁化状态通过图案化的垂直各向异性隧道磁阻(TMR)堆叠通过堆叠的输出电位来检测。 提出了两个详细的存储单元:在一个提出的单元中,数据存储层独立于但保持靠近感测TMR堆栈,其磁化方向影响TMR堆栈自由层内的磁化配置,从而最终影响 堆栈 在另一个提出的单元中,垂直各向异性数据存储层是感测TMR堆栈的自由层,当感测电流通过时,其磁化状态将直接影响堆叠的输出电位。