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    • 1. 发明申请
    • CONDUCTIVE FILM AND METHOD FOR MANUFACTURING THE SAME
    • 导电膜及其制造方法
    • US20080280119A1
    • 2008-11-13
    • US12182716
    • 2008-07-30
    • Yutaka KishimotoSouko Fukahori
    • Yutaka KishimotoSouko Fukahori
    • B32B27/36B32B27/28B32B27/34C23C14/00B05D5/12
    • C23C14/086H01L31/022483H01L31/1884Y02E10/50Y10T428/265Y10T428/31507Y10T428/31721Y10T428/31786Y10T428/31935
    • A ZnO-based conductive film having acceptable practical use moisture resistance, properties required for a transparent conductive film, and economical advantage and a method for manufacturing the film are provided. A first ZnO conductive film layer 1, optionally containing a Group III oxide dopant, is formed on a surface of a substrate 11 and a second ZnO conductive film layer 2, which is transparent and includes a Group III oxide different from a Group III oxide (if present) included in the first conductive film layer is formed on the first ZnO conductive film layer to form a multi-layer structure. The thickness of the first ZnO conductive film layer is preferably 5 to 50 nm, and the second and any following ZnO conductive film layers include a Group III oxide at a concentration of 7 wt % or less. The first ZnO conductive film layer is formed under a condition in which high crystallinity can be obtained (for example, under a heat treatment) so as to enhance the crystallinity of the second ZnO conductive film layer and following conductive film layers formed on the first ZnO conductive film layer.
    • 提供具有可接受的实际使用的耐湿性,透明导电膜所需的性能和经济优点的ZnO基导电膜以及该膜的制造方法。 可选地含有III族氧化物掺杂剂的第一ZnO导电膜层1形成在基板11和透明的第二ZnO导电膜层2的表面上,并且包括不同于III族氧化物的III族氧化物 包含在第一导电膜层中的导电膜形成在第一ZnO导电膜层上以形成多层结构。 第一ZnO导电膜层的厚度优选为5〜50nm,第二及以后的ZnO导电膜层为浓度为7重量%以下的III族氧化物。 第一ZnO导电膜层在可以获得高结晶度的条件下(例如,在热处理中)形成,以提高第二ZnO导电膜层的结晶度和在第一ZnO上形成的导电膜层 导电膜层。
    • 2. 发明申请
    • TRANSPARENT CONDUCTIVE FILM AND METHOD FOR MANUFACTURING THE SAME
    • 透明导电薄膜及其制造方法
    • US20080050595A1
    • 2008-02-28
    • US11562561
    • 2006-11-22
    • Osamu NAKAGAWARAHiroyuki SETOYutaka KISHIMOTO
    • Osamu NAKAGAWARAHiroyuki SETOYutaka KISHIMOTO
    • H01B5/14
    • C23C14/086C23C14/34Y10T428/31507
    • A ZnO-based transparent conductive film has practicable moisture resistance, desired characteristics of a transparent conductive film, and excellent economy. The transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more.ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight.The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween.The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.
    • ZnO系透明导电膜具有实用的耐湿性,透明导电膜的期望特性,经济性优异。 透明导电膜通过在衬底上生长掺杂有III族元素氧化物的ZnO并且具有其中c轴沿多个不同方向生长的晶体结构的区域来制造。 通过在衬底上生长掺杂有III族元素氧化物的ZnO生长的透明导电膜具有半峰全宽为13.5°或更大的ZnO(002)摇摆曲线。 ZnO掺杂有III族元素氧化物,使得透明导电膜中III族元素氧化物的比例为约7%至约40%重量。 透明导电膜形成在衬底上,其间设置有SiNx薄膜。 透明导电膜通过薄膜形成方法在衬底上形成,其中偏置电压施加到衬底。
    • 3. 发明授权
    • Transparent conductive film and method for manufacturing the same
    • 透明导电膜及其制造方法
    • US07867636B2
    • 2011-01-11
    • US11562561
    • 2006-11-22
    • Osamu NakagawaraHiroyuki SetoYutaka Kishimoto
    • Osamu NakagawaraHiroyuki SetoYutaka Kishimoto
    • H01B5/14
    • C23C14/086C23C14/34Y10T428/31507
    • A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.
    • 通过在衬底上生长掺杂有III族元素氧化物的ZnO并且具有其中c轴沿多个不同方向生长的晶体结构的区域来制造ZnO基透明导电膜。 通过在衬底上生长掺杂有III族元素氧化物的ZnO生长的透明导电膜具有半峰全宽为13.5°或更大的ZnO(002)摇摆曲线。 ZnO掺杂有III族元素氧化物,使得透明导电膜中III族元素氧化物的比例为约7%至约40%重量。 透明导电膜形成在衬底上,其间设置有SiNx薄膜。 透明导电膜通过薄膜形成方法在衬底上形成,其中偏置电压施加到衬底。