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1. 发明授权

US06565812B1 Gas sensor and method for producing it 有权
标题翻译：气体传感器及其制造方法
公开(公告)号：US06565812B1
公开(公告)日：2003-05-20
申请号：US09702698
申请日：2000-11-01
申请人： Tohru Nomura , Hideki Okoshi , Tomoko Yoshimura , Yutaka Kishimoto , Yuichiro Tajiri
发明人： Tohru Nomura , Hideki Okoshi , Tomoko Yoshimura , Yutaka Kishimoto , Yuichiro Tajiri
IPC分类号： G01N2700
CPC分类号： G01N27/12 , Y10T29/49 , Y10T29/49002
摘要： A base is provided with a concave and three leads, and the central lead is bent to the side opposite to the concave, and the other leads are bent to the side of the concave. A central electrode of a sensor element is attached to the central lead and the bottom of the concave and a coil serving as both a heater and an electrode is attached to the other leads to support the sensor element on a small base at four points.
摘要翻译：基部设有凹陷和三根引线，中心引线弯曲到与凹面相对的一侧，另一个引线弯曲到凹面的一侧。传感器元件的中心电极附接到中心引线和凹部的底部，并且用作加热器和电极两者的线圈附接到另一个引线，以将传感器元件支撑在四个小点上的小基座上。

2. 发明申请

US20080280119A1 CONDUCTIVE FILM AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：导电膜及其制造方法
公开(公告)号：US20080280119A1
公开(公告)日：2008-11-13
申请号：US12182716
申请日：2008-07-30
申请人： Yutaka Kishimoto , Souko Fukahori
发明人： Yutaka Kishimoto , Souko Fukahori
IPC分类号： B32B27/36 , B32B27/28 , B32B27/34 , C23C14/00 , B05D5/12
CPC分类号： C23C14/086 , H01L31/022483 , H01L31/1884 , Y02E10/50 , Y10T428/265 , Y10T428/31507 , Y10T428/31721 , Y10T428/31786 , Y10T428/31935
摘要： A ZnO-based conductive film having acceptable practical use moisture resistance, properties required for a transparent conductive film, and economical advantage and a method for manufacturing the film are provided. A first ZnO conductive film layer 1, optionally containing a Group III oxide dopant, is formed on a surface of a substrate 11 and a second ZnO conductive film layer 2, which is transparent and includes a Group III oxide different from a Group III oxide (if present) included in the first conductive film layer is formed on the first ZnO conductive film layer to form a multi-layer structure. The thickness of the first ZnO conductive film layer is preferably 5 to 50 nm, and the second and any following ZnO conductive film layers include a Group III oxide at a concentration of 7 wt % or less. The first ZnO conductive film layer is formed under a condition in which high crystallinity can be obtained (for example, under a heat treatment) so as to enhance the crystallinity of the second ZnO conductive film layer and following conductive film layers formed on the first ZnO conductive film layer.
摘要翻译：提供具有可接受的实际使用的耐湿性，透明导电膜所需的性能和经济优点的ZnO基导电膜以及该膜的制造方法。可选地含有III族氧化物掺杂剂的第一ZnO导电膜层1形成在基板11和透明的第二ZnO导电膜层2的表面上，并且包括不同于III族氧化物的III族氧化物包含在第一导电膜层中的导电膜形成在第一ZnO导电膜层上以形成多层结构。第一ZnO导电膜层的厚度优选为5〜50nm，第二及以后的ZnO导电膜层为浓度为7重量％以下的III族氧化物。第一ZnO导电膜层在可以获得高结晶度的条件下（例如，在热处理中）形成，以提高第二ZnO导电膜层的结晶度和在第一ZnO上形成的导电膜层导电膜层。

3. 发明授权

US07867636B2 Transparent conductive film and method for manufacturing the same 有权
标题翻译：透明导电膜及其制造方法
公开(公告)号：US07867636B2
公开(公告)日：2011-01-11
申请号：US11562561
申请日：2006-11-22
申请人： Osamu Nakagawara , Hiroyuki Seto , Yutaka Kishimoto
发明人： Osamu Nakagawara , Hiroyuki Seto , Yutaka Kishimoto
IPC分类号： H01B5/14
CPC分类号： C23C14/086 , C23C14/34 , Y10T428/31507
摘要： A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.
摘要翻译：通过在衬底上生长掺杂有III族元素氧化物的ZnO并且具有其中c轴沿多个不同方向生长的晶体结构的区域来制造ZnO基透明导电膜。通过在衬底上生长掺杂有III族元素氧化物的ZnO生长的透明导电膜具有半峰全宽为13.5°或更大的ZnO（002）摇摆曲线。 ZnO掺杂有III族元素氧化物，使得透明导电膜中III族元素氧化物的比例为约7％至约40％重量。透明导电膜形成在衬底上，其间设置有SiNx薄膜。透明导电膜通过薄膜形成方法在衬底上形成，其中偏置电压施加到衬底。

4. 发明申请

US20090269588A1 TRANSPARENT CONDUCTIVE FILM AND METHOD OF PRODUCING TRANSPARENT CONDUCTIVE FILM 审中-公开
标题翻译：透明导电膜和透明导电膜的制造方法
公开(公告)号：US20090269588A1
公开(公告)日：2009-10-29
申请号：US12500694
申请日：2009-07-10
申请人： Souko Fukahori , Yutaka Kishimoto
发明人： Souko Fukahori , Yutaka Kishimoto
IPC分类号： B32B15/00 , B32B17/06 , B32B27/36
CPC分类号： C23C14/34 , C23C14/086 , Y10T428/31507 , Y10T428/31721 , Y10T428/31786
摘要： A transparent conductive film made of ZnO includes a ZnO layer having a region having a granular crystal structure. The zinc oxide layer is doped with a group-III element. The dose of the group-III element is about 0.8 to about 11.5 weight percent on an oxide mass basis. The group-III element is at least one selected from the group consisting of Ga, Al, and In. The full width at half maximum of a ZnO (002) rocking curve is preferably about 10.5 degrees or less.
摘要翻译：由ZnO制成的透明导电膜包括具有粒状晶体结构的区域的ZnO层。氧化锌层掺杂有III族元素。基于氧化物质量，III族元素的剂量为约0.8至约11.5重量％。 III族元素是选自Ga，Al和In中的至少一种元素。 ZnO（002）摇摆曲线的半峰全宽优选为约10.5度以下。

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