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1. 发明申请

US20080050595A1 TRANSPARENT CONDUCTIVE FILM AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：透明导电薄膜及其制造方法
公开(公告)号：US20080050595A1
公开(公告)日：2008-02-28
申请号：US11562561
申请日：2006-11-22
申请人： Osamu NAKAGAWARA , Hiroyuki SETO , Yutaka KISHIMOTO
发明人： Osamu NAKAGAWARA , Hiroyuki SETO , Yutaka KISHIMOTO
IPC分类号： H01B5/14
CPC分类号： C23C14/086 , C23C14/34 , Y10T428/31507
摘要： A ZnO-based transparent conductive film has practicable moisture resistance, desired characteristics of a transparent conductive film, and excellent economy. The transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more.ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight.The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween.The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.
摘要翻译： ZnO系透明导电膜具有实用的耐湿性，透明导电膜的期望特性，经济性优异。透明导电膜通过在衬底上生长掺杂有III族元素氧化物的ZnO并且具有其中c轴沿多个不同方向生长的晶体结构的区域来制造。通过在衬底上生长掺杂有III族元素氧化物的ZnO生长的透明导电膜具有半峰全宽为13.5°或更大的ZnO（002）摇摆曲线。 ZnO掺杂有III族元素氧化物，使得透明导电膜中III族元素氧化物的比例为约7％至约40％重量。透明导电膜形成在衬底上，其间设置有SiNx薄膜。透明导电膜通过薄膜形成方法在衬底上形成，其中偏置电压施加到衬底。

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