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1. 发明授权

US09225038B2 Solid battery and method for regenerating the same 有权
标题翻译：固体电池及其再生方法
公开(公告)号：US09225038B2
公开(公告)日：2015-12-29
申请号：US13819577
申请日：2010-09-16
申请人： Yutaka Hirose
发明人： Yutaka Hirose
IPC分类号： H01M10/42 , H01M10/052 , H01M10/054 , H01M10/615 , H01M10/6571 , H01M10/0562 , H01M10/0585 , H01M2/14 , H01M10/0565 , H01M10/26 , H01M4/02
CPC分类号： H01M10/052 , H01M2/14 , H01M10/054 , H01M10/0562 , H01M10/0565 , H01M10/0585 , H01M10/26 , H01M10/4242 , H01M10/615 , H01M10/6571 , H01M2004/027 , Y02E60/122 , Y02T10/7011
摘要： Provided are a solid battery which can reduce overvoltage and a regeneration method thereof. The solid battery comprises: an anode capable of absorbing and releasing an alkali metal ion or alkaline earth metal ion; a solid electrolyte layer containing a solid electrolyte having ion conductivity and disposed in a manner to contact the anode; a cathode capable of releasing and absorbing the alkali metal ion or alkaline earth metal ion which moves between the anode and cathode; a heating device to heat the anode to a temperature at which it softens; and a fastening device capable of applying force to closely contact the solid electrolyte layer with the anode. The regeneration method comprises the steps of heating the anode to a temperature at which it softens, and compressing the softened anode, in a direction intersecting a face of the anode which contacts with the solid electrolyte layer.
摘要翻译：提供可以减少过电压的固体电池及其再生方法。固体电池包括：能够吸收和释放碱金属离子或碱土金属离子的阳极; 固体电解质层，其含有具有离子传导性并以与阳极接触的方式设置的固体电解质; 能够释放和吸收在阳极和阴极之间移动的碱金属离子或碱土金属离子的阴极; 将阳极加热到软化温度的加热装置; 以及能够施加力以使固体电解质层与阳极紧密接触的紧固装置。再生方法包括以下步骤：将阳极加热至软化温度，并在与固体电解质层接触的阳极相交的方向上压缩软化的阳极。

2. 发明申请

US20140147755A1 METAL AIR BATTERY 有权
标题翻译：金属空气电池
公开(公告)号：US20140147755A1
公开(公告)日：2014-05-29
申请号：US14036717
申请日：2013-09-25
申请人： Yutaka HIROSE , Sanae OKAZAKI , Fuminori MIZUNO
发明人： Yutaka HIROSE , Sanae OKAZAKI , Fuminori MIZUNO
IPC分类号： H01M4/86 , H01M12/08
CPC分类号： H01M4/8663 , H01M12/04 , H01M12/06 , H01M12/065 , H01M12/08 , Y02E60/128 , Y02E60/50
摘要： The invention provides a metal air battery with improved discharge characteristics compared to conventional ones. This is achieved by a metal air battery including a positive electrode layer, a negative electrode layer, and an electrolyte layer positioned between the positive electrode layer and the negative electrode layer, wherein the positive electrode layer includes an electroconductive material, a binder, and a SiO2 particle, and wherein the SiO2 particle has a specific surface area of 16.7 m2/g or less.
摘要翻译：本发明提供了一种与常规电池相比具有改善的放电特性的金属空气电池。这是通过包括正极层，负极层和位于正极层和负极层之间的电解质层的金属空气电池来实现的，其中正极层包括导电材料，粘合剂和 SiO 2颗粒，SiO 2颗粒的比表面积为16.7m 2 / g以下。

3. 发明授权

US08704321B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08704321B2
公开(公告)日：2014-04-22
申请号：US13462889
申请日：2012-05-03
申请人： Toru Okino , Yoshihisa Kato , Yutaka Hirose , Mitsuyoshi Mori
发明人： Toru Okino , Yoshihisa Kato , Yutaka Hirose , Mitsuyoshi Mori
IPC分类号： H01L29/51
CPC分类号： H01L27/14625 , H01L27/1464 , H01L27/14665 , H01L27/14685
摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.
摘要翻译：本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件，以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

4. 发明申请

US20130164571A1 SOLID BATTERY AND METHOD FOR REGENERATING THE SAME 有权
标题翻译：固体电池及其再生方法
公开(公告)号：US20130164571A1
公开(公告)日：2013-06-27
申请号：US13819577
申请日：2010-09-16
申请人： Yutaka Hirose
发明人： Yutaka Hirose
IPC分类号： H01M10/42
CPC分类号： H01M10/052 , H01M2/14 , H01M10/054 , H01M10/0562 , H01M10/0565 , H01M10/0585 , H01M10/26 , H01M10/4242 , H01M10/615 , H01M10/6571 , H01M2004/027 , Y02E60/122 , Y02T10/7011
摘要： Provided are a solid battery which can reduce overvoltage and a regeneration method thereof. The solid battery comprises: an anode capable of absorbing and releasing an alkali metal ion or alkaline earth metal ion; a solid electrolyte layer containing a solid electrolyte having ion conductivity and disposed in a manner to contact the anode; a cathode capable of releasing and absorbing the alkali metal ion or alkaline earth metal ion which moves between the anode and cathode; a heating device to heat the anode to a temperature at which it softens; and a fastening device capable of applying force to closely contact the solid electrolyte layer with the anode. The regeneration method comprises the steps of heating the anode to a temperature at which it softens, and compressing the softened anode, in a direction intersecting a face of the anode which contacts with the solid electrolyte layer.
摘要翻译：提供可以减少过电压的固体电池及其再生方法。固体电池包括：能够吸收和释放碱金属离子或碱土金属离子的阳极; 固体电解质层，其含有具有离子传导性并以与阳极接触的方式设置的固体电解质; 能够释放和吸收在阳极和阴极之间移动的碱金属离子或碱土金属离子的阴极; 将阳极加热到软化温度的加热装置; 以及能够施加力以使固体电解质层与阳极紧密接触的紧固装置。再生方法包括以下步骤：将阳极加热至软化温度，并在与固体电解质层接触的阳极相交的方向上压缩软化的阳极。

5. 发明申请

US20120276457A1 NEGATIVE ELECTRODE STRUCTURE FOR AQUEOUS ELECTROLYTE BATTERIES AND AQUEOUS ELECTROLYTE BATTERY COMPRISING THE NEGATIVE ELECTRODE STRUCTURE 审中-公开
标题翻译：负极电极电池负极电极结构及包含负极电极结构的水性电解电池
公开(公告)号：US20120276457A1
公开(公告)日：2012-11-01
申请号：US13001919
申请日：2010-01-22
申请人： Yutaka Hirose , Shinji Nakanishi
发明人： Yutaka Hirose , Shinji Nakanishi
IPC分类号： H01M10/056 , H01M8/22
CPC分类号： H01M4/134 , H01M4/62 , H01M10/052 , H01M10/0562 , H01M12/06 , H01M2004/027 , H01M2300/0077 , H01M2300/0094
摘要： A negative electrode structure for aqueous electrolyte comprising at least a negative electrode active material layer, wherein the negative electrode active material layer comprises, as the negative electrode active material, at least one selected from the group consisting of the following metals and alloys comprising at least one of the metals: Li, Na, K, Ca, Mg, Zn, Al and Ag, and wherein a solid electrolyte layer comprising a Zr-containing garnet-type solid electrolyte described by the following formula (1), is provided on one side of the negative electrode active material layer: Formula (1): Li5+xLayZrzO12 wherein 0
摘要翻译：包含至少一种负极活性物质层的含水电解质的负极结构体，其中所述负极活性物质层包含作为负极活性物质的至少一种选自下列金属和至少包含以下的金属的合金：金属中的一种：Li，Na，K，Ca，Mg，Zn，Al和Ag，并且其中包含由下式（1）描述的含Zr的石榴石型固体电解质的固体电解质层设置在一个负极活性物质层的侧面：式（1）：Li5 + xLayZrzO12其中0

6. 发明授权

US07910464B2 Method for manufacturing a semiconductor device having a III-V nitride semiconductor 有权
标题翻译：具有III-V族氮化物半导体的半导体器件的制造方法
公开(公告)号：US07910464B2
公开(公告)日：2011-03-22
申请号：US12695759
申请日：2010-01-28
申请人： Tomohiro Murata , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译：本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

7. 发明授权

US07800097B2 Semiconductor device including independent active layers and method for fabricating the same 有权
标题翻译：包括独立有源层的半导体器件及其制造方法
公开(公告)号：US07800097B2
公开(公告)日：2010-09-21
申请号：US11299818
申请日：2005-12-13
申请人： Yutaka Hirose , Tsuyoshi Tanaka
发明人： Yutaka Hirose , Tsuyoshi Tanaka
IPC分类号： H01L21/00 , H01L29/06 , H01L31/072
CPC分类号： H01L27/0605 , H01L21/84 , H01L27/1203 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group III-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.
摘要翻译：半导体器件包括n型硅的半导体衬底，在其上部包括彼此间隔开并掺杂有p型杂质的第一极性反转区域和第二极性反转区域。包括第一有源层的第一HFET和包括由III-V族氮化物半导体构成的第二有源层的第二HFET独立地形成在半导体衬底中的相应极性反转区域上，并且HFET彼此电连接通过互连。

8. 发明申请

US20090250779A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20090250779A1
公开(公告)日：2009-10-08
申请号：US12417093
申请日：2009-04-02
申请人： Yutaka HIROSE , Keisuke TANAKA , Shigeru SAITOU , Daisuke UEDA
发明人： Yutaka HIROSE , Keisuke TANAKA , Shigeru SAITOU , Daisuke UEDA
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： H01L27/14621 , H01L27/14629 , H01L27/14685
摘要： A solid-state imaging device in the present invention includes plural photoelectric conversion elements, plural wiring layers, and plural optical waveguide regions each corresponding to and arranged over one of the plural photoelectric conversion elements. A top end of each of the plural optical waveguide regions is higher than a top end of at least one of the plural wiring layers. A bottom end of each of the plural optical waveguide regions is lower than a bottom end of at least one of the plural wiring layers. The plural optical waveguide regions include plural types of optical waveguide regions each having different light absorbing characteristics.
摘要翻译：本发明的固体摄像器件包括多个光电转换元件，多个布线层和多个光波导区域，每个光电转换元件与多个光电转换元件中的一个相对应并布置。多个光波导区域中的每一个的顶端高于多个布线层中的至少一个的顶端。多个光波导区域的每一个的底端低于多个布线层中的至少一个的底端。多个光波导区域包括具有不同光吸收特性的多种类型的光波导区域。

9. 发明授权

US07553747B2 Schottky diode having a nitride semiconductor material and method for fabricating the same 有权
标题翻译：具有氮化物半导体材料的肖特基二极管及其制造方法
公开(公告)号：US07553747B2
公开(公告)日：2009-06-30
申请号：US11495454
申请日：2006-07-31
申请人： Yutaka Hirose , Tsuyoshi Tanaka
发明人： Yutaka Hirose , Tsuyoshi Tanaka
IPC分类号： H01L29/74
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/66143
摘要： A Schottky diode includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer selectively formed on the first nitride semiconductor layer and having a different conductivity type from that of the first nitride semiconductor layer. A Schottky electrode is selectively formed on the first nitride semiconductor layer to come into contact with the top surface of the second nitride semiconductor layer, and an ohmic electrode is formed thereon so as to be spaced apart from the Schottky electrode.
摘要翻译：肖特基二极管包括形成在衬底上的第一氮化物半导体层和选择性地形成在第一氮化物半导体层上并且具有与第一氮化物半导体层的导电类型不同的导电类型的第二氮化物半导体层。肖特基电极选择性地形成在第一氮化物半导体层上以与第二氮化物半导体层的顶表面接触，并且在其上形成欧姆电极以与肖特基电极间隔开。

10. 发明申请

US20090050937A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090050937A1
公开(公告)日：2009-02-26
申请号：US12257807
申请日：2008-10-24
申请人： Tomohiro MURATA , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
发明人： Tomohiro MURATA , Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
IPC分类号： H01L29/778
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译：本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

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