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    • 1. 发明授权
    • Wafer dividing method using laser beam with an annular spot
    • 使用激光束与环形点的晶圆分割方法
    • US07585751B2
    • 2009-09-08
    • US12140914
    • 2008-06-17
    • Naotoshi KiriharaKoji YamaguchiYukio Morishige
    • Naotoshi KiriharaKoji YamaguchiYukio Morishige
    • H01L21/304
    • H01L21/78
    • In a wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method includes a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and a cutting step for allowing a cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.
    • 在将晶片分割为各个装置的晶片分割方法中,晶片被街道划分以形成由半导体衬底的前表面上层叠有绝缘膜和功能膜的层叠体构成的器件, 方法包括激光处理槽形成步骤,用于在层叠体上形成激光加工槽,以便通过沿着街道向晶片的层叠体侧施加形成有环形斑点的激光束到达半导体基板,环形点 其外径大于切割刀片的宽度并且小于所述街道的宽度; 以及切割步骤,用于允许切割刀沿着形成在街道处的激光加工槽切割半导体晶片的半导体衬底。
    • 2. 发明申请
    • WAFER DIVIDING METHOD USING LASER BEAM WITH AN ANNULAR SPOT
    • 使用激光束与环形点的波浪分割方法
    • US20090017600A1
    • 2009-01-15
    • US12140914
    • 2008-06-17
    • Naotoshi KiriharaKoji YamaguchiYukio Morishige
    • Naotoshi KiriharaKoji YamaguchiYukio Morishige
    • H01L21/304
    • H01L21/78
    • In a wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method includes a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and a cutting step for allowing a cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.
    • 在将晶片分割为各个装置的晶片分割方法中,晶片被街道划分以形成由半导体衬底的前表面上层叠有绝缘膜和功能膜的层叠体构成的器件, 方法包括激光处理槽形成步骤,用于在层叠体上形成激光加工槽,以便通过沿着街道向晶片的层叠体侧施加形成有环形斑点的激光束到达半导体基板,环形点 其外径大于切割刀片的宽度并且小于所述街道的宽度; 以及切割步骤,用于允许切割刀沿着形成在街道处的激光加工槽切割半导体晶片的半导体衬底。
    • 3. 发明授权
    • Laser ionization mass spectroscope
    • 激光电离质谱仪
    • US07521671B2
    • 2009-04-21
    • US10593091
    • 2005-03-15
    • Naotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • Naotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • H01J49/00B01D59/44G01N1/00
    • H01J49/162H01J49/0422H01J49/40
    • The invention provides an ultra-sonic jet multi-photon resonance ionization type mass analyzing device.The laser beam ionization mass analyzing device includes a pulsed gas ejecting device 12 for ejecting in pulse mode carrier gas containing sample molecules into a vacuum vessel 17, a laser beam irradiation system for irradiating laser beam for selective photo-reaction of sample molecules in said pulsed gas, repeller and extraction electrodes 18 and 19 generating an electric field for extraction of sample molecular ions generated by the photo reaction and a mass analyzing device 26 for mass analysis of extracted sample molecular ions. The laser beam irradiation system is set to irradiate laser beam to sample molecules near a position whereat a pressure time distribution of pulsed gas translating in the vacuum vessel 17 transitions from a flat-top pressure distribution to a triangular pressure distribution.
    • 本发明提供超声波喷射多光子共振电离型质量分析装置。 激光束离子化质量分析装置包括:脉冲气体喷射装置12,用于以脉冲模式将含有样品分子的载气喷射到真空容器17中;激光束照射系统,用于照射激光束用于所述脉冲的样品分子的选择性光反应 产生用于提取由光反应产生的样品分子离子的电场的气体,推斥器和引出电极18和19,以及用于质量分析提取的样品分子离子的质量分析装置26。 设置激光束照射系统以将激光束照射到在真空容器17中平移的脉冲气体的压力时间分布从平顶压力分布转换到三角形压力分布的位置附近的样品分子。
    • 4. 发明申请
    • Method of analyzing dioxins
    • 分析二恶英的方法
    • US20070108391A1
    • 2007-05-17
    • US10564305
    • 2005-03-24
    • Toru ShiomitsuHideki NaganoNaotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • Toru ShiomitsuHideki NaganoNaotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • H01J27/00
    • G01N27/64
    • A dioxin analyzing method sensitively detecting dioxins is provided. The method includes the first step of obtaining respective specific wavelength spectra of a plurality of dioxin isomers whose concentrations are known, selecting a plurality of specific wavelengths from each of the specific wavelength spectra, and preparing calibration curves, each showing the relationship between the ion signal intensity and the dioxin isomer concentration at any one of the selected specific wavelengths, for all the specific wavelengths selected for each dioxin isomer; the second step of preparing a sensitivity matrix showing the relationship between the ion signal intensities and the dioxin isomer concentrations at the specific wavelengths, from the calibration curves of the dioxin isomers prepared in the first step; and the third step of obtaining a specific wavelength spectrum of a sample to be analyzed, and determining the concentrations of a plurality of dioxin isomers in the sample using the ion signal intensities of the specific wavelength spectrum and the sensitivity matrix prepared in the second step.
    • 提供了敏感地检测二恶英的二恶英分析方法。 该方法包括获得浓度已知的多种二恶英异构体的各自特定波长光谱的第一步骤,从每个特定波长光谱中选择多个特定波长,并制备各自显示离子信号之间的关系的校准曲线 对于针对每种二恶英异构体选择的所有特定波长,在所选择的特定波长中的任何一个处的强度和二恶英异构体浓度; 根据第一步中制备的二恶英异构体的校准曲线,制备显示离子信号强度和特定波长处的二恶英异构体浓度之间的关系的灵敏度矩阵的第二步骤; 以及获得要分析的样品的特定波长谱的第三步骤,并且使用在第二步骤中制备的特定波长谱和灵敏度矩阵的离子信号强度来确定样品中多个二恶英异构体的浓度。
    • 5. 发明申请
    • Method of Analyzing Dioxins
    • 分析二恶英的方法
    • US20080131973A1
    • 2008-06-05
    • US10564132
    • 2005-03-24
    • Naotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • Naotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • G01N33/00
    • H01J49/162Y10T436/21
    • A dioxin analyzing method sensitively detecting dioxins is provided.The method includes the first step of obtaining respective specific wavelength spectra of a plurality of dioxin isomers whose concentrations are known, selecting a plurality of specific wavelengths from each of the specific wavelength spectra, and preparing calibration curves, each showing the relationship between the ion signal intensity and the dioxin isomer concentration at any one of the selected specific wavelengths, for all the specific wavelengths selected for each dioxin isomer; the second step of preparing a sensitivity matrix showing the relationship between the ion signal intensities and the dioxin isomer concentrations at the specific wavelengths, from the calibration curves of the dioxin isomers prepared in the first step; and the third step of obtaining a specific wavelength spectrum of a sample to be analyzed, and determining the concentrations of a plurality of dioxin isomers in the sample using the ion signal intensities of the specific wavelength spectrum and the sensitivity matrix prepared in the second step.
    • 提供了敏感地检测二恶英的二恶英分析方法。 该方法包括获得浓度已知的多种二恶英异构体的各自特定波长光谱的第一步骤,从每个特定波长光谱中选择多个特定波长,并制备各自显示离子信号之间的关系的校准曲线 对于针对每种二恶英异构体选择的所有特定波长,在所选择的特定波长中的任何一个处的强度和二恶英异构体浓度; 根据第一步中制备的二恶英异构体的校准曲线,制备显示离子信号强度和特定波长处的二恶英异构体浓度之间的关系的灵敏度矩阵的第二步骤; 以及获得要分析的样品的特定波长谱的第三步骤,并且使用在第二步骤中制备的特定波长谱和灵敏度矩阵的离子信号强度来确定样品中多个二恶英异构体的浓度。
    • 6. 发明申请
    • Laser Ionization Mass Spectroscope
    • 激光电离质谱仪
    • US20070272849A1
    • 2007-11-29
    • US10593091
    • 2005-03-15
    • Naotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • Naotoshi KiriharaNorifumi KitadaKenji TakahashiHaruaki YoshidaMizuho TanakaYasuo Suzuki
    • H01J49/26
    • H01J49/162H01J49/0422H01J49/40
    • The invention provides an ultra-sonic jet multi-photon resonance ionization type mass analyzing device. The laser beam ionization mass analyzing device includes a pulsed gas ejecting device 12 for ejecting in pulse mode carrier gas containing sample molecules into a vacuum vessel 17, a laser beam irradiation system for irradiating laser beam for selective photo-reaction of sample molecules in said pulsed gas, repeller and extraction electrodes 18 and 19 generating an electric field for extraction of sample molecular ions generated by the photo reaction and a mass analyzing device 26 for mass analysis of extracted sample molecular ions. The laser beam irradiation system is set to irradiate laser beam to sample molecules near a position whereat a pressure time distribution of pulsed gas translating in the vacuum vessel 17 transitions from a flat-top pressure distribution to a triangular pressure distribution.
    • 本发明提供超声波喷射多光子共振电离型质量分析装置。 激光束离子化质量分析装置包括:脉冲气体喷射装置12,用于以脉冲模式将含有样品分子的载气喷射到真空容器17中;激光束照射系统,用于照射激光束用于所述脉冲的样品分子的选择性光反应 产生用于提取由光反应产生的样品分子离子的电场的气体,推斥器和引出电极18和19,以及用于质量分析提取的样品分子离子的质量分析装置26。 设置激光束照射系统以将激光束照射到在真空容器17中平移的脉冲气体的压力时间分布从平顶压力分布转换到三角形压力分布的位置附近的样品分子。