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1. 发明授权

US06630375B2 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device 有权
公开(公告)号：US06630375B2
公开(公告)日：2003-10-07
申请号：US10002147
申请日：2001-12-05
申请人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
发明人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
IPC分类号： H01L218238
CPC分类号： H01L27/0925 , H01L21/823807
摘要： Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.

2. 发明授权

US06368905B1 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device 有权
标题翻译：用于制造半导体晶片的工艺，半导体晶片，半导体集成电路器件的制造工艺以及半导体集成电路器件
公开(公告)号：US06368905B1
公开(公告)日：2002-04-09
申请号：US09513349
申请日：2000-02-25
申请人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
发明人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
IPC分类号： H01L218238
CPC分类号： H01L27/0925 , H01L21/823807
摘要： Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS.FETs.
摘要翻译：在包含预定导电类型的杂质的半导体衬底主体的主表面上，形成外延层，该外延层含有与前一种杂质相同的导电类型的杂质，并且与前者中设计的杂质相同不纯。之后，形成具有与所述杂质相同的导电类型的阱区，并且其杂质浓度从所述外延层的深度逐渐降低。阱区由MIS.FET的栅极绝缘膜形成。

3. 发明申请

US20130228322A1 BRAZING METHOD AND BRAZED STRUCTURE 有权
标题翻译： BRAZING方法和BRAZED结构
公开(公告)号：US20130228322A1
公开(公告)日：2013-09-05
申请号：US13882861
申请日：2011-08-04
申请人： Keisuke Yasuda , Yuji Sugino
发明人： Keisuke Yasuda , Yuji Sugino
IPC分类号： B23K26/20 , F28F3/00
CPC分类号： B23K26/20 , B23K1/0012 , B23K1/0016 , B23K1/20 , B23K26/244 , B23K26/32 , B23K2101/14 , B23K2101/42 , B23K2103/50 , F28F3/00 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L2224/32225 , H01L2924/12042 , H05K7/20254 , H05K7/20927 , H01L2924/00
摘要： In this brazing method, which brazes an insulating substrate and a top plate that configure an HV inverter cooler, the insulating substrate is disposed on the top plate with a brazing material layer therebetween, and then, by means of laser irradiation, laser welding is performed at an arbitrary plurality of positions at the joining section between the top plate and the insulating substrate, thus provisionally affixing the insulating substrate to the top plate. Thereafter, by means of heating and melting the brazing material layer, the insulating substrate is brazed onto the top plate with the plurality of laser-welded positions as the brazing start points. After brazing, a power semiconductor is joined onto the insulating substrate corresponding to the center portion of the region surrounded by the plurality of brazing start points.
摘要翻译：在钎焊绝缘基板和构成HV逆变器冷却器的顶板的钎焊方法中，绝缘基板在其间具有钎焊材料层而设置在顶板上，然后通过激光照射进行激光焊接在顶板和绝缘基板之间的接合部分的任意多个位置处，由此临时将绝缘基板固定在顶板上。此后，通过加热熔融钎料层，绝缘基板以多个激光焊接位置钎焊到顶板上作为钎焊起点。在钎焊之后，功率半导体被接合到与由多个钎焊起点包围的区域的中心部分相对应的绝缘基板上。

4. 发明授权

US06806130B2 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device 失效
标题翻译：用于制造半导体晶片的工艺，半导体晶片，半导体集成电路器件的制造工艺以及半导体集成电路器件
公开(公告)号：US06806130B2
公开(公告)日：2004-10-19
申请号：US10014405
申请日：2001-12-14
申请人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
发明人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
IPC分类号： H01L218238
CPC分类号： H01L27/0925 , H01L21/823807
摘要： Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.
摘要翻译：在包含预定导电类型的杂质的半导体衬底主体的主表面上，形成外延层，该外延层含有与前一种杂质相同的导电类型的杂质，并且与前者中设计的杂质相同不纯。之后，形成具有与所述杂质相同的导电类型的阱区，并且其杂质浓度从所述外延层的深度逐渐降低。阱区由MIS.FET的栅极绝缘膜形成。

5. 发明授权

US09238275B2 Brazing method and brazed structure 有权
标题翻译：钎焊方法和钎焊结构
公开(公告)号：US09238275B2
公开(公告)日：2016-01-19
申请号：US13882861
申请日：2011-08-04
申请人： Keisuke Yasuda , Yuji Sugino
发明人： Keisuke Yasuda , Yuji Sugino
IPC分类号： H01L23/40 , B23K1/14 , B23K1/005 , B23K26/32 , B23K26/20 , B23K1/00 , B23K1/20 , H01L23/373 , H01L23/473 , F28F3/00 , H05K7/20 , H01L23/00
CPC分类号： B23K26/20 , B23K1/0012 , B23K1/0016 , B23K1/20 , B23K26/244 , B23K26/32 , B23K2101/14 , B23K2101/42 , B23K2103/50 , F28F3/00 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L2224/32225 , H01L2924/12042 , H05K7/20254 , H05K7/20927 , H01L2924/00
摘要： In this brazing method, which brazes an insulating substrate and a top plate that configure an HV inverter cooler, the insulating substrate is disposed on the top plate with a brazing material layer therebetween, and then, by means of laser irradiation, laser welding is performed at an arbitrary plurality of positions at the joining section between the top plate and the insulating substrate, thus provisionally affixing the insulating substrate to the top plate. Thereafter, by means of heating and melting the brazing material layer, the insulating substrate is brazed onto the top plate with the plurality of laser-welded positions as the brazing start points. After brazing, a power semiconductor is joined onto the insulating substrate corresponding to the center portion of the region surrounded by the plurality of brazing start points.
摘要翻译：在钎焊绝缘基板和构成HV逆变器冷却器的顶板的钎焊方法中，绝缘基板在其间具有钎焊材料层而设置在顶板上，然后通过激光照射进行激光焊接在顶板和绝缘基板之间的接合部分的任意多个位置处，由此临时将绝缘基板固定在顶板上。此后，通过加热熔融钎料层，绝缘基板以多个激光焊接位置钎焊到顶板上作为钎焊起点。在钎焊之后，功率半导体被接合到与由多个钎焊起点包围的区域的中心部分相对应的绝缘基板上。

6. 发明申请

US20140158335A1 CLAD MATERIAL FOR COOLER, COOLER FOR HEAT-GENERATING DEVICE, AND METHOD OF PRODUCING COOLER FOR HEAT-GENERATING DEVICE 审中-公开
标题翻译：用于冷却器的冷却材料，用于发热装置的冷却器和用于制造用于发热装置的冷却器的方法
公开(公告)号：US20140158335A1
公开(公告)日：2014-06-12
申请号：US14236727
申请日：2012-08-08
申请人： Shu Kuroda , Michihide Yoshino , Kazutaka Ohno , Tomo Fukami , Yuji Sugino
发明人： Shu Kuroda , Michihide Yoshino , Kazutaka Ohno , Tomo Fukami , Yuji Sugino
IPC分类号： F28F21/08 , B23K1/00
CPC分类号： B32B15/016 , B23K1/0012 , B23K35/28 , B23K35/286 , C22C9/00 , C22C9/02 , C22C9/06 , C22C21/00 , C22C21/02 , C22C21/10 , C22C2204/00 , F28F21/08 , F28F21/081 , F28F21/089 , H01L21/4878 , H01L23/3735 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A clad material for a cooler is provided by executing production of a tensile strain of 3 to 10% or rolling at a finish rolling ratio of 10 to 25%, and optionally performing a heat treatment for 1 to 8 hours at a temperature within a range from 150 to 400° C., on a clad raw material having a three layer structure of a core material, a first brazing filler metal layer that covers one side (the surface on the side of a cooling water passage) of this core material, and a second brazing filler metal layer that covers the other side (the surface on the opposite side from the cooling water passage). Specific ranges are prescribed for certain properties before and after brazing.
摘要翻译：通过执行3〜10％的拉伸应变或10〜25％的精轧比的轧制，可以在一定范围内的温度下进行1〜8小时的热处理，从而提供冷却器用复合材料在具有芯材三层结构的包层原料上，覆盖该芯材的一侧（冷却水通道侧的表面）的第一钎料金属层，在150〜400℃的范围内，以及覆盖另一侧（与冷却水通道相反侧的表面）的第二钎料填充金属层。对于钎焊前后的某些特性规定了具体的范围。

7. 发明申请

US20080307650A1 Method of manufacturing heat exchanger and apparatus for manufacturing heat exchanger 有权
标题翻译：制造热交换器的方法和制造热交换器的装置
公开(公告)号：US20080307650A1
公开(公告)日：2008-12-18
申请号：US12157591
申请日：2008-06-11
申请人： Yuji Sugino , Hiroyuki Nakamura , Motohiro Shirai
发明人： Yuji Sugino , Hiroyuki Nakamura , Motohiro Shirai
IPC分类号： B21D53/02
CPC分类号： B21D53/02 , F28F19/04 , Y10T29/4935 , Y10T29/53113
摘要： In a method of manufacturing a heat exchanger, a liquid resin is applied to an outer surface of the heat exchanger, and then surplus liquid resin is removed from the outer surface. In removing the surplus liquid resin, before a first air having a first velocity is directed to the heat exchanger for blowing the surplus liquid resin off the heat exchanger, a second air having a second velocity lower than the first velocity is directed to the heat exchanger to remove the surplus liquid resin from the heat exchanger by moving the surplus liquid resin along the outer surface of the heat exchanger. The second air is directed toward the heat exchanger by a second blower before the first air is directed toward the heat exchanger by a first blower.
摘要翻译：在制造热交换器的方法中，将液体树脂施加到热交换器的外表面，然后从外表面去除多余的液态树脂。在去除多余的液体树脂时，在具有第一速度的第一空气被引导到热交换器以将多余的液体树脂吹出热交换器之前，具有低于第一速度的第二速度的第二空气被引导到热交换器通过沿着热交换器的外表面移动多余的液态树脂，从热交换器中除去多余的液态树脂。在第一空气通过第一鼓风机引导到热交换器之前，第二空气被第二鼓风机引向热交换器。

8. 发明授权

US6043114A Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device 失效
公开(公告)号：US6043114A
公开(公告)日：2000-03-28
申请号：US934774
申请日：1997-09-22
申请人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
发明人： Hiroto Kawagoe , Tatsumi Shirasu , Shogo Kiyota , Norio Suzuki , Eiichi Yamada , Yuji Sugino , Manabu Kitano , Yoshihiko Sakurai , Takashi Naganuma , Hisashi Arakawa
IPC分类号： H01L29/78 , H01L21/205 , H01L21/8238 , H01L27/092 , H01L21/336 , H01L21/8234
CPC分类号： H01L27/0925 , H01L21/823807
摘要： Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS.FETs.

9. 发明申请

US20140158330A1 HEAT EXCHANGER 审中-公开
标题翻译：热交换器
公开(公告)号：US20140158330A1
公开(公告)日：2014-06-12
申请号：US14235298
申请日：2012-08-08
申请人： Shu Kuroda , Michihide Yoshino , Kazutaka Ohno , Tomo Fukami , Yuji Sugino
发明人： Shu Kuroda , Michihide Yoshino , Kazutaka Ohno , Tomo Fukami , Yuji Sugino
IPC分类号： F28F21/08
CPC分类号： F28F21/084 , B23K35/0238 , B23K35/286 , B32B15/016 , C22C21/00 , C22C21/02 , C22C21/10 , C22C21/14 , F28F3/025 , F28F3/12 , F28F21/089 , F28F2275/04 , H01L21/4882 , H01L23/3736 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A heat exchanger has a clad thin sheet material, a clad thick sheet material that is disposed so as to define a passage between the clad thick sheet material and the clad thin sheet material, and that has a sheet thickness greater than that of the clad thin sheet material, and an inner fin held between the clad materials. The clad thick sheet material and the clad thin sheet material have Zn-containing brazing filler metal layers on their passage sides, respectively, and the post-brazing surface Zn amounts are set so as to satisfy specific conditions. Further, certain conditions concerning the compositions of each of the layers that constitute the clad materials, and the inner fin are set.
摘要翻译：热交换器具有包覆薄片材料，包层厚片材，其被设置为限定包层厚片材和包层薄片材料之间的通道，并且其厚度大于包层薄片材片材，以及保持在包覆材料之间的内翅片。包层厚片材和包层薄片材料在其通道侧分别具有含Zn的钎料金属层，并且后钎焊表面Zn量被设定为满足特定条件。此外，设定关于构成包层材料的各层的组成和内部翅片的某些条件。

10. 发明授权

US08001675B2 Apparatus for manufacturing heat exchanger 有权
标题翻译：用于制造热交换器的装置
公开(公告)号：US08001675B2
公开(公告)日：2011-08-23
申请号：US12157591
申请日：2008-06-11
申请人： Yuji Sugino , Hiroyuki Nakamura , Motohiro Shirai
发明人： Yuji Sugino , Hiroyuki Nakamura , Motohiro Shirai
IPC分类号： B21D53/02 , B23P15/26
CPC分类号： B21D53/02 , F28F19/04 , Y10T29/4935 , Y10T29/53113
摘要： In a heat exchanger, a liquid resin is applied to an outer surface of the heat exchanger, and then surplus liquid resin is removed from the outer surface. In removing the surplus liquid resin, before air having a first velocity is directed to the heat exchanger for blowing the surplus liquid resin off the heat exchanger, air having a second velocity lower than the first velocity is directed to the heat exchanger to remove the surplus liquid resin from the heat exchanger by moving the surplus liquid resin along the outer surface of the heat exchanger. The air at the second velocity is directed toward the heat exchanger by a second blower before the air at the first velocity is directed toward the heat exchanger by a first blower.
摘要翻译：在热交换器中，将液体树脂施加到热交换器的外表面，然后从外表面去除多余的液态树脂。在去除多余的液态树脂时，在具有第一速度的空气被引导到热交换器以将多余的液态树脂从热交换器吹出之前，具有低于第一速度的第二速度的空气被引导到热交换器以去除剩余的液体树脂通过沿着热交换器的外表面移动剩余的液态树脂，来自热交换器的液态树脂。在第一速度的空气通过第一鼓风机指向热交换器之前，第二速度的空气被第二鼓风机引向热交换器。

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