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1. 发明授权

US08882566B2 Method of machining opposite ends of rod members 有权
标题翻译：加工杆构件相对端的方法
公开(公告)号：US08882566B2
公开(公告)日：2014-11-11
申请号：US14113088
申请日：2012-05-15
申请人： Yuji Okamura , Yosuke Makino
发明人： Yuji Okamura , Yosuke Makino
IPC分类号： B24B5/00 , B42B9/00
CPC分类号： B42B9/00 , B24B5/01 , B24B9/00 , B24B19/009 , B24B27/0658 , B24B27/0675 , B24D5/123
摘要： A method of efficiently cutting and machining opposite ends of rod members in sequence is provided, which comprises steps of: abutting a grinding wheel (5) against the periphery of a long rod material (10a) placed at a predetermined work position; moving the grinding wheel towards and along the axis of a first portion of the long rod material (10a) in rotation to taper the tail end of the first portion (to be provided as a rod member); and then moving the grinding wheel (5) further towards the axis of the rod material (10a) to cut the first portion off the long rod material and at the same time chamfer the leading end of a second portion of the long rod material in contact with the rear side of the grinding wheel. After removing the first rod member cut off, the sequence of these steps is repeated as needed.
摘要翻译：提供了一种有效地切割和加工杆构件的相对端的方法，其包括以下步骤：将砂轮（5）抵靠放置在预定工作位置的长棒材料（10a）的周边; 沿着长杆材料（10a）的第一部分的轴线朝向并沿其旋转移动砂轮以使第一部分（被设置为杆构件）的尾端逐渐变细; 然后将砂轮（5）进一步朝向棒材（10a）的轴线移动，以将长棒材料的第一部分切割下来，同时倒角接触的长杆材料的第二部分的前端与砂轮的后侧。在去除第一杆构件切断后，根据需要重复这些步骤的顺序。

2. 发明申请

US20140227946A1 METHOD OF MACHINING OPPOSITE ENDS OF ROD MEMBERS 有权
标题翻译：加工骨架成员的相对端的方法
公开(公告)号：US20140227946A1
公开(公告)日：2014-08-14
申请号：US14113088
申请日：2012-05-15
申请人： Yuji Okamura , Yosuke Makino
发明人： Yuji Okamura , Yosuke Makino
IPC分类号： B24B9/00
CPC分类号： B42B9/00 , B24B5/01 , B24B9/00 , B24B19/009 , B24B27/0658 , B24B27/0675 , B24D5/123
摘要： A method of efficiently cutting and machining opposite ends of rod members in sequence is provided, which comprises steps of: abutting a grinding wheel (5) against the periphery of a long rod material (10a) placed at a predetermined work position; moving the grinding wheel towards and along the axis of a first portion of the long rod material (10a) in rotation to taper the tail end of the first portion (to be provided as a rod member); and then moving the grinding wheel (5) further towards the axis of the rod material (10a) to cut the first portion off the long rod material and at the same time chamfer the leading end of a second portion of the long rod material in contact with the rear side of the grinding wheel. After removing the first rod member cut off, the sequence of these steps is repeated as needed.
摘要翻译：提供了一种有效地切割和加工杆构件的相对端的方法，其包括以下步骤：将砂轮（5）抵靠放置在预定工作位置的长杆材料（10a）的周边; 沿着长杆材料（10a）的第一部分的轴线朝向并沿其旋转移动砂轮以使第一部分（被设置为杆构件）的尾端逐渐变细; 然后将砂轮（5）进一步朝向棒材（10a）的轴线移动，以将长棒材料的第一部分切割下来，同时倒角接触的长杆材料的第二部分的前端与砂轮的后侧。在去除第一杆构件切断后，根据需要重复这些步骤的顺序。

3. 发明授权

US08441017B2 Schottky barrier diode and method for making the same 有权
公开(公告)号：US08441017B2
公开(公告)日：2013-05-14
申请号：US13150635
申请日：2011-06-01
申请人： Shingo Ohta , Tatsuya Kiriyama , Takashi Nakamura , Yuji Okamura
发明人： Shingo Ohta , Tatsuya Kiriyama , Takashi Nakamura , Yuji Okamura
IPC分类号： H01L29/24
CPC分类号： H01L21/28008 , H01L29/0619 , H01L29/66143 , H01L29/872
摘要： A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

4. 发明申请

US20110284876A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110284876A1
公开(公告)日：2011-11-24
申请号：US13205176
申请日：2011-08-08
申请人： Yuji Okamura , Masashi Matsushita
发明人： Yuji Okamura , Masashi Matsushita
IPC分类号： H01L29/872 , H01L21/329
CPC分类号： H01L29/0615 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66143 , H01L29/872
摘要： A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
摘要翻译：设置有碳化硅半导体衬底的半导体器件和以欧姆接触连接到碳化硅半导体衬底的一个表面的欧姆金属层，其由硅化物形成自由能和碳化物形成自由能分别取负值的金属材料组成。欧姆金属层由例如钼，钛，铬，锰，锆，钽或钨等金属材料构成。

5. 发明授权

US07262434B2 Semiconductor device with a silicon carbide substrate and ohmic metal layer 有权
标题翻译：具有碳化硅衬底和欧姆金属层的半导体器件
公开(公告)号：US07262434B2
公开(公告)日：2007-08-28
申请号：US10397177
申请日：2003-03-27
申请人： Yuji Okamura , Masashi Matsushita
发明人： Yuji Okamura , Masashi Matsushita
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/0615 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66143 , H01L29/872
摘要： A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
摘要翻译：设置有碳化硅半导体衬底的半导体器件和以欧姆接触连接到碳化硅半导体衬底的一个表面的欧姆金属层，其由硅化物形成自由能和碳化物形成自由能分别取负值的金属材料组成。欧姆金属层由例如钼，钛，铬，锰，锆，钽或钨等金属材料构成。

6. 发明申请

US20140322660A1 Automated Heat Treatment System for Engine Valve 有权
标题翻译：发动机阀门自动热处理系统
公开(公告)号：US20140322660A1
公开(公告)日：2014-10-30
申请号：US14356017
申请日：2012-01-17
申请人： Yorikazu Murata , Yuji Okamura , Yosuke Makino , Hiroyuki Oda
发明人： Yorikazu Murata , Yuji Okamura , Yosuke Makino , Hiroyuki Oda
IPC分类号： F27B9/00
CPC分类号： F27B9/00 , B21K1/22 , B65G25/02 , C21D1/00 , C21D9/0018 , C21D9/0056 , C21D9/0068 , F27B9/20 , F27B9/30 , F27D3/0024
摘要： An inventive automated heat treatment system has a furnace for heat treating forged engine valves, a carry-in mechanism for transporting the forged valves into the furnace, and a carry-out mechanism for transporting heat treated valves out of the furnace. Each of the carry-in mechanism and the carry-out mechanism has a retention mechanism for retaining valves hung, and a transport mechanism for transporting valves to the furnace as they are hung. The furnace has heating means, groups of paired rails for supporting and moving the valves hung in the furnace, and a stopper for controlling the positions of the valves on the rails. The engine valves are maintained hung with their umbrella-shaped portions supported by the respective mechanisms throughout the automated heat treatment processes. Thus, the heat treatment of engine valves is done in a fewer steps than in a conventional system.
摘要翻译：本发明的自动热处理系统具有用于热处理锻造发动机阀的炉，用于将锻造阀输送到炉中的携带机构，以及用于将热处理的阀输送出炉的进出机构。每个输入机构和执行机构具有用于保持阀悬挂的保持机构，以及用于在将阀悬挂时将阀输送到炉中的输送机构。炉具有加热装置，用于支撑和移动悬挂在炉中的阀的成对轨道组，以及用于控制在轨道上的阀位置的止动器。发动机阀门在整个自动化热处理过程中保持悬挂在其各自机构支撑的伞形部分上。因此，发动机气门的热处理以比传统系统更少的步骤完成。

7. 发明授权

US08527178B2 Control apparatus for four-wheel drive vehicle 有权
标题翻译：四轮驱动车辆控制装置
公开(公告)号：US08527178B2
公开(公告)日：2013-09-03
申请号：US12958589
申请日：2010-12-02
申请人： Masatoshi Noguchi , Hirohiko Totsuka , Yuji Okamura
发明人： Masatoshi Noguchi , Hirohiko Totsuka , Yuji Okamura
IPC分类号： G06F19/00 , G06G7/70
CPC分类号： B60K23/0808 , B60W10/06 , B60W30/18172 , B60W2520/263 , B60W2710/0677
摘要： In apparatus for controlling operation of a four-wheel drive vehicle having a prime mover (engine), drive wheels driven by the prime mover and free wheels, a VC (viscous coupling; torque transferring device) installed between the drive wheels and free wheels to transfer torque generated in response to a difference between inputted and outputted rotation thereof, output of the prime mover is decreased based on a desired rotational speed of the drive wheels driven by the prime mover when calculated difference between inputted and outputted rotation of the VC is equal to or greater than a predetermined value, thereby enabling to control the driving force effectively so as to achieve required vehicle driving performance.
摘要翻译：在用于控制具有原动机（发动机）的四轮驱动车辆的操作装置中，由原动机和自由车轮驱动的驱动轮，安装在驱动轮和自由车轮之间的VC（粘性联轴器;扭矩传递装置）根据其输入和输出旋转之间的差异产生的传递扭矩，当计算出的VC的输入和输出旋转之间的差异相等时，原动机的输出基于由原动机驱动的驱动轮的期望转速而减小达到或大于预定值，从而能够有效地控制驱动力，从而实现所需的车辆驾驶性能。

8. 发明授权

US07294858B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07294858B2
公开(公告)日：2007-11-13
申请号：US11052257
申请日：2005-02-08
申请人： Yuji Okamura , Masashi Matsushita
发明人： Yuji Okamura , Masashi Matsushita
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/0615 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66143 , H01L29/872
摘要： A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
摘要翻译：设置有碳化硅半导体衬底的半导体器件和以欧姆接触连接到碳化硅半导体衬底的一个表面的欧姆金属层，其由硅化物形成自由能和碳化物形成自由能分别取负值的金属材料组成。欧姆金属层由例如钼，钛，铬，锰，锆，钽或钨等金属材料构成。

9. 发明授权

US4370291A Process for producing polyester film 失效
标题翻译：生产聚酯薄膜的方法
公开(公告)号：US4370291A
公开(公告)日：1983-01-25
申请号：US304200
申请日：1981-09-21
申请人： Takahiko Kazama , Yuji Okamura , Saburo Fujita
发明人： Takahiko Kazama , Yuji Okamura , Saburo Fujita
IPC分类号： B29C35/00 , B29C49/00 , B29C55/00 , B29C55/06 , B29C55/14 , B29C71/00 , B29K67/00 , B29D7/02 , B29C17/02
CPC分类号： B29C55/143 , B29C55/065 , B29C35/00 , B29C71/00 , B29K2067/00
摘要： A biaxially oriented polyester film which is well balanced between sliding properties and transparency and having an enhanced uniformity in thickness is prepared by a process wherein a polyester, predominantly comprised of polyethylene terephthalate, is extruded into a sheet form extrudate; the extrudate is quenched to a temperature of below Tg to obtain a solidified, substantially amorphous film; the film is drawn in the longitudinal direction at a drawing ratio of larger than 2.4 but smaller than 6.5; the film is quenched; and then, the film is drawn in the transverse direction at a drawing ratio of at least 2.5. The drawing in the longitudinal direction is carried out in two steps wherein:(i) in the first drawing step, the substantially amorphous film is drawn in one or more stages at a total drawing zone length (l.sub.1) of at least 50 mm so that the resulting polyester film possesses a birefringence of 1.times.10.sup.-3 to 12.times.10.sup.-3 ;(ii) the drawn film is kept, without being quenched to a temperature of not higher than the Tg, in contact with a roll maintained at 100.degree. to 130.degree. C.; and then,(iii) in the second drawing step, the film is drawn at a drawing ratio of larger than 1.6 but smaller than 2.7 in one stage at a drawing zone length of shorter than l.sub.1 /2.
摘要翻译：通过以主要由聚对苯二甲酸乙二醇酯构成的聚酯挤出成片状挤出物的方法制备在滑动性能和透明度之间良好平衡并具有增强的厚度均匀性的双轴取向聚酯膜; 将挤出物淬火至低于Tg的温度以获得固化的基本无定形的膜; 该膜沿纵向拉伸比大于2.4但小于6.5; 该膜被淬火; 然后以至少2.5的拉伸比在横向拉伸薄膜。在纵向方向上的拉伸分两个步骤进行，其中：（i）在第一拉伸步骤中，基本上非晶膜以至少50mm的总拉伸区长度（l1）以一个或多个阶段拉伸，使得所得聚酯膜具有1×10 -3至12×10 -3的双折射; （ii）在与保持在100-130℃的辊接触的情况下，将拉伸膜保持在不被淬火至不高于Tg的温度下。然后，（iii）在第二拉伸工序中，在拉伸小于11/2的拉伸长度的一个阶段中，以大于1.6但小于2.7的拉伸比拉伸薄膜。

10. 发明授权

US07999346B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07999346B2
公开(公告)日：2011-08-16
申请号：US12801630
申请日：2010-06-17
申请人： Yuji Okamura , Masashi Matsushita
发明人： Yuji Okamura , Masashi Matsushita
IPC分类号： H01L29/47
CPC分类号： H01L29/0615 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66143 , H01L29/872
摘要： A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
摘要翻译：设置有碳化硅半导体衬底的半导体器件和以欧姆接触连接到碳化硅半导体衬底的一个表面的欧姆金属层，其由硅化物形成自由能和碳化物形成自由能分别取负值的金属材料组成。欧姆金属层由例如钼，钛，铬，锰，锆，钽或钨等金属材料构成。

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