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1. 发明申请

US20110255350A1 METHOD OF OPERATING MEMORY CELL 有权
标题翻译：操作记忆体的方法
公开(公告)号：US20110255350A1
公开(公告)日：2011-10-20
申请号：US12835075
申请日：2010-07-13
申请人： Yu-Fon Huang , Teng-Hao Yeh , Miao-Chih Hsu , Tzung-Ting Han
发明人： Yu-Fon Huang , Teng-Hao Yeh , Miao-Chih Hsu , Tzung-Ting Han
IPC分类号： G11C16/04
CPC分类号： H01L29/7923 , G11C11/5621 , G11C16/0458 , H01L29/66833
摘要： A method of operating a memory cell is provided. The memory cell has first, second, third and fourth storage regions in a charge-storage layer between a substrate and a word line. The first and second storage regions are respectively adjacent to lower and upper portions at one side of the protruding part of the substrate, and the third and fourth storage regions are respectively adjacent to lower and upper portions at the other side of the same. The second and third storage regions are regarded as a top storage region. When the top storage region is programmed, a first positive voltage is applied to the word line, a second positive voltage is applied to a top bit line in a top portion of the protruding part, and a bottom voltage is applied to first and second bottom bit lines in the substrate beside the protruding part respectively.
摘要翻译：提供了一种操作存储单元的方法。存储单元在基板和字线之间的电荷存储层中具有第一，第二，第三和第四存储区域。第一和第二存储区分别与衬底的突出部分的一侧的下部和上部相邻，并且第三和第四存储区分别在其另一侧的下部和上部相邻。第二和第三存储区域被认为是顶部存储区域。当顶部存储区域被编程时，第一正电压被施加到字线，第二正电压被施加到突出部分的顶部中的顶位线，并且底电压被施加到第一和第二底部位于突出部分旁边的基板中的位线。

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